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SEMICONDUCTOR TECHNICAL DATA by 2N5209/D

 
NPN Silicon 



COLLECTOR
3

2
BASE

1
EMITTER 1
2
3
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage VCEO 50 Vdc
Collector – Base Voltage VCBO 50 Vdc
Emitter – Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC 50 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W
Ambient
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 50 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 50 — Vdc
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current ICBO — 50 nAdc
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current IEBO — 50 nAdc
(VEB = 3.0 Vdc, IC = 0)

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 100 µAdc, VCE = 5.0 Vdc) 2N5209 100 300
2N5210 200 600

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5209 150 —

2N5210 250 —

(IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5209 150 —

2N5210 250 —
Collector – Emitter Saturation Voltage VCE(sat) — 0.7 Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage VBE(on) — 0.85 Vdc
(IC = 1.0 mAdc, VCE = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT 30 — MHz
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance Ccb — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5209 150 600
2N5210 250 900
Noise Figure NF dB
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, 2N5209 — 3.0
f = 1.0 kHz) 2N5210 — 2.0

(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, 2N5209 — 4.0

f = 1.0 kHz) 2N5210 — 3.0

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE
30 30
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0
en , NOISE VOLTAGE (nV)

en , NOISE VOLTAGE (nV)

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0

300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA)

Figure 2. Effects of Frequency Figure 3. Effects of Collector Current

10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16
In, NOISE CURRENT (pA)

3.0 BANDWIDTH = 10 Hz to 15.7 kHz

NF, NOISE FIGURE (dB)

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current Figure 5. Wideband Noise Figure

100 Hz NOISE DATA

300 20
200 BANDWIDTH = 1.0 Hz IC = 10 mA
VT, TOTAL NOISE VOLTAGE (nV)

16 IC = 10 mA 3.0 mA
100 100 µA
NF, NOISE FIGURE (dB)

70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)

Figure 6. Total Noise Voltage Figure 7. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
4.0

h FE, DC CURRENT GAIN (NORMALIZED)

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7

0.5
0.4
0.3

0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

1.0 – 0.4

TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C
0.8 – 0.8

RθVBE, BASE–EMITTER
V, VOLTAGE (VOLTS)

0.6 VBE @ VCE = 5.0 V – 1.2

0.4 – 1.6 TJ = 25°C to 125°C

0.2 – 2.0
– 55°C to 25°C
VCE(sat) @ IC/IB = 10
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages Figure 10. Temperature Coefficients

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

8.0 500

6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)

4.0 Ceb
200
3.0 Ccb

2.0
100

VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ 2N5209/D