SEMICONDUCTOR KF5N60D/I

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description
KF5N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A 6.60 +_ 0.20
electronic ballast and switching mode power supplies. B _ 0.20
6.10 +
C 5.34 +_ 0.30
D _ 0.20
0.70 +
B E 2.70 +_ 0.15
FEATURES F _ 0.10
2.30 +
・VDSS= 600V, ID= 3.5A G 0.96 MAX
H 0.90 MAX
H
・Drain-Source ON Resistance : RDS(ON)=2.0Ω (Max) @VGS = 10V J
E J _ 0.20
1.80 +
G N K _ 0.10
2.30 +
・Qg(typ) = 11nC L 0.50 +_ 0.10
F F M M _ 0.10
0.50 +
N 0.70 MIN
O 0.1 MAX

1 2 3
1. GATE
2. DRAIN
MAXIMUM RATING (Tc=25℃) 3. SOURCE
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ± 30 V
DPAK (1)
@TC=25℃ 3.5
ID
Drain Current @TC=100℃ 2.2 A
Pulsed (Note1) IDP 13 KF5N60I
A H
Single Pulsed Avalanche Energy EAS 140 mJ C J
(Note 2)
D
Repetitive Avalanche Energy EAR 3.5 mJ
(Note 1)
B

DIM MILLIMETERS
Peak Diode Recovery dv/dt _ 0.2
dv/dt 4.5 V/ns A 6.6 +
(Note 3) B _ 0.2
6.1 +
M
K

C _ 0.3
5.34 +
Drain Power Tc=25℃ 59.5 W P
PD N D _ 0.2
0.7 +
Dissipation Derate above 25℃ 0.48 W/℃ E _ 0.3
9.3 +
E

F _ 0.2
2.3 +
Maximum Junction Temperature Tj 150 ℃ G _ 0.1
0.76 +
G H _ 0.1
2.3 +
Storage Temperature Range Tstg -55～150 ℃ F F L J _ 0.1
0.5+
K _ 0.2
1.8 +
Thermal Characteristics L _ 0.1
0.5 +
M _ 0.1
1.0 +
Thermal Resistance, Junction-to-Case RthJC 2.1 ℃/W 1 2 3 N 0.96 MAX
1. GATE
Thermal Resistance, Junction-to- 2. DRAIN P _ 0.3
1.02 +
RthJA 110 ℃/W 3. SOURCE
Ambient

PIN CONNECTION

IPAK(1)
D

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 KF5N60D/I

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient Δ BVDSS/Δ Tj ID=250㎂, Referenced to 25℃ - 0.61 - V/℃
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 ㎂
Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V
Gate Leakage Current IGSS VGS=± 30V, VDS=0V - - ± 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.75A - 1.7 2.0 Ω
Dynamic
Total Gate Charge Qg - 11 -
VDS=480V, ID=4.5A
Gate-Source Charge Qgs - 2.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 45 -
Turn-on Delay time td(on) - 15 -
VDD=300V
Turn-on Rise time tr - 16 -
ID=4.5A ns
Turn-off Delay time td(off) - 30 -
RG=25Ω (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 520 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 5.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 4.5
VGS<Vth A
Pulsed Source Current ISP - - 18
Diode Forward Voltage VSD IS=3.5A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=4.5A, VGS=0V, - 270 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 1.8 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.7mH, IS=4.5A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 4.5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.

Marking

1 1

KF5N60 KF5N60
D 001 2 I 001 2

1 PRODUCT NAME

2 LOT NO

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 KF5N60D/I

Fig1. ID - VDS Fig2. ID - VGS

100
VDS=30V
Drain Current ID (A)

Drain Current ID (A)

1
10
VGS=10V
10
VGS=7V
TC=100 C
25 C
0
VGS=5V
10
1

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 6.0
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
5.0
1.1
4.0 VGS=6V

1.0 3.0

VGS=10V
2.0
0.9
1.0

0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

10
2 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 2.5A
2.5
Normalized On Resistance

10
1 2.0

TC=100 C 1.5
25 C
10
0 1.0

0.5

10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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 KF5N60D/I

Fig 7. C - VDS Fig8. Qg- VGS

1000 12
ID=4.5A

Gate - Source Voltage VGS (V)

Ciss 10
Capacitance (pF)

100 8

VDS = 480V
Coss 6

10 4

Crss 2

1 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. ID - Tj

102 Operation in this 6

area is limited by RDS(ON)
5
Drain Current ID (A)

Drain Current ID (A)

101 10µs
4
100µs

100 1ms 3
10ms
2
10-1 DC
Tc= 25 C 1
Tj = 150 C
2 Single pulse 0
10
100 101 102 103 0 25 50 75 100 125 150

Drain - Source Voltage VDS (V)

Junction Temperature Tj ( C)

Fig11. Transient Thermal Response Curve

Duty=0.5
Transient Thermal Resistance

100
0.2

0.1

0.05

PDM
10-1 0.02
t1
0.01
t2
lse
Pu
gle - Duty Factor, D= t1/t2
Sin
Tj(max) - Tc
- RthJC =
PD
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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 KF5N60D/I

Fig12. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig13. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig14. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

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Fig15. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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