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ESD Protected
* RoHS and Halogen-Free Compliant 100% UIS tested
100% Rg tested (note *)
SOIC-8
G
G
S
S S
S
Thermal Characteristics
Parameter Symbol Typ Max Units
AF
Maximum Junction-to-Ambient t ≤ 10s 26 40 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 50 75 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 14 24 °C/W
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
50 50
-4.5V
VDS=-5V
-10V -4V
40 40
-6V
125°C
30 30
-ID (A)
-ID(A)
25°C
20 -3.5V 20
10 10
VGS=-3V
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5
10 1.7
1.6
Normalized On-Resistance
VGS=-20V
1.5 ID = -15A
8 VGS=-6V
VGS=-10V
RDS(ON) (mΩ)
1.4
ID = -15A
1.3
VGS=-10V 1.2
6
VGS=-6V
VGS=-20V 1.1
ID = -10A
1.0
4 0.9
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
16 -15
1.0E+01
ID=-15A -12.8
14 1.0E+00
125°C
1.0E-01
12
RDS(ON) (mΩ)
1.0E-02
-IS (A)
10
125°C
1.0E-03
8
1.0E-04
6 25°C
25°C 1.0E-05
4
4 8 12 16 20 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics
10 4000
VDS=-15V 3500
8 ID=-15A
3000 Ciss
Capacitance (pF)
2500
-VGS (Volts)
6
2000
4 1500
Coss
1000
2
500
Crss
0 0
0 10 20 30 40 50 0 10 20 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0
10000
TJ(Max)=150°C
RDS(ON) TA=25°C
100.0 10µs
limited 1000
100µs
Power (W)
-ID (Amps)
10.0
1ms
100
10ms
1.0
1s 0.1s
10
0.1 10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0 0.00001 0.001 0.1 10 1000
0.1 1 10 100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
-15
10
D=Ton/T -12.8 In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=75°C/W
Thermal Resistance
0.1
PD
0.01 Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Ig
C harge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds