LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 

Lonten N-channel 650V, 7A, 0.57Ω LonFETTM Power MOSFET 

 
Description Product Summary 
LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V 
advanced super junction technology. The resulting RDS(on),max 0.57Ω 
device has extremely low on resistance, making it IDM 21A 
especially suitable for applications which require Qg,typ 19nC 
superior power density and outstanding efficiency.  
 
Features  
 Ultra low Rdson   D
 Ultra low gate charge (typ. Qg = 19nC)  
 100% UIS tested  
 RoHS compliant   G
   
    S
 
N-Channel MOSFET Pb

 
Absolute Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 650 V

Continuous drain current ( TC = 25°C ) ID 7 A

( TC = 100°C ) 4.4 A
1)
Pulsed drain current IDM 21 A

Gate-Source voltage VGSS ±30 V

2)
Avalanche energy, single pulse EAS 230 mJ
1)
Avalanche energy, repetitive EAR 0.5 mJ
1)
Avalanche current, repetitive IAR 7 A

Power Dissipation ( TC = 25°C ) PD 83 W

- Derate above 25°C 0.67 W/°C

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Continuous diode forward current IS  7 A

Diode pulse current IS,pulse 21 A

 
 
Thermal Characteristics
Parameter Symbol Value Unit
Thermal Resistance, Junction-to-Case RθJC 1.5 °C/W

Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W

Version 6.0 2014 1 www.lonten.cc

 
   
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Package Marking and Ordering Information
Device Device Package Marking
LSC07N65 TO-220 LSC07N65
LSE07N65 TO-263 LSE07N65
LSF07N65 TO-262 LSF07N65

Electrical Characteristics Tc = 25°C unless otherwise noted

 
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static characteristics
Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V

Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V

Drain cut-off current IDSS VDS=650 V, VGS=0 V, μA

Tj = 25°C - - 1
Tj = 125°C - 10 -

Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA

Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA

Drain-source on-state resistance RDS(on) VGS=10 V, ID=3.5 A -

Tj = 25°C - 0.51 0.57 Ω
Tj = 150°C - 1.2 -

Gate resistance RG f=1 MHz, open drain - 0.4 - Ω

Dynamic characteristics
Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 710 -

Output capacitance Coss f = 1 MHz - 470 - pF

Reverse transfer capacitance Crss - 6 -

Turn-on delay time td(on) VDD = 300V, ID = 3.5A - 16 -

Rise time tr RG = 12Ω, VGS=10V - 13 - ns

Turn-off delay time td(off) - 35 -

Fall time tf - 7 -

Gate charge characteristics

Gate to source charge Qgs VDD=480 V, ID=3.5A, - 4 -

Gate to drain charge Qgd VGS=0 to 10 V - 9 - nC

Gate charge total Qg - 19 -

Gate plateau voltage Vplateau - 5.8 - V

Reverse diode characteristics

Diode forward voltage VSD VGS=0 V, IF=3.5A - - 1.2 V

Reverse recovery time trr VR=50 V, IF=7A, - 290 - ns

Reverse recovery charge Qrr dIF/dt=100 A/μs - 3.4 - μC

Peak reverse recovery current Irrm - 14 - A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.5A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C

Version 6.0 2014 2 www.lonten.cc

 
    
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Electrical Characteristics Diagrams

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

14 14
Common Source
Common Source VGS=10V
Tc = 25°C
12 Tc = 25°C 12 VDS=20 V
Pulse test VGS=7V Pulse test
10 10
VGS=6.5V

Drain current ID (A)

Drain current ID (A)

8 8

VGS=6V
6 6

4 4
VGS=5.5V
2 2

0 0
0 4 8 12 16 2 4 6 8

Drain−source voltage VDS (V) Gate−source voltage VGS (V)

Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature
1.1 1.3

1
1.2
0.9
1.1
0.8
1
Gate threshold voltage
Vth , (Normalized)

0.7
RDS (on) (Ω)

0.9
0.6
VGS = 10V 0.8
0.5
0.7
0.4
Tc = 25°C 0.6
0.3 IDS=0.25 mA
Pulse test
Pulse test
0.2 0.5
0 5 10 15 20 ‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160
Drain current ID (A) Junction temperature Tj (°C)

Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature

1.1 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance

2
BVDSS, (Normalized)

RDS(on), (Normalized)

1
1.5

1
0.9

VGS=0 V
0.5 VGS=10 V
IDS=0.25 mA
IDS=3.5 A
Pulse test
Pulse test

0.8 0
‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160 ‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160

Junction temperature Tj (°C) Junction temperature Tj (°C)

Version 6.0 2014 3 www.lonten.cc

 
    
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics

10000.00 10

VDS=120V
1000.00 8
Ciss

Gate-Source Voltage VGS (V)

VDS=480V
Coss
Capacitance (pF)

100.00 6
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd Crss
10.00 4

1.00 2
Notes:
f = 1 MHz ID = 3.5A
VGS=0 V

0.10 0
0.1 1 10 100 0 2 4 6 8 10 12 14
Drain-Source Voltage VDS (V) Total Gate Charge QG (nC)

Figure 9. Maximum Safe Operating Area Figure 10. Power Dissipation vs. Temperature
100 100

90
Drain power dissipation PD (W)

Limited by RDS(on) 80
10 10us
70
Drain current ID (A)

100us
60
1ms
1 DC 50

40

Notes: 30
0.1 Tc = 25°C
Tj = 150°C 20
Single Pulse
10

0.01 0
1 10 100 1000 0 40 80 120 160
Drain-Source Voltage VDS (V) Case temperature Tc (°C)

Figure 11. Transient Thermal Response Curve

1.0E+01
In descending order
D=0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Normalized Transient

1.0E+00
Thermal Resistance

1.0E‐01
P
DM
t
1.0E‐02
Duty = t/T T
θJC

Z (t)=1.5°C/W Max.
Z

θJC

1.0E‐03
1.0E‐06 1.0E‐05 1.0E‐04 1.0E‐03 1.0E‐02 1.0E‐01

Pulse Width t (s)

Version 6.0 2014 4 www.lonten.cc

 
   
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Gate Charge Test Circuit & Waveform
 
 
 
 
 
 
 
 
 
 
 
 
 
Switching Test Circuit & Waveforms 

 
 
 
Unclamped Inductive Switching Test Circuit & Waveforms 
 

 
 
 
 
 

Version 6.0 2014 5 www.lonten.cc

 
   
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Mechanical Dimensions for TO-220
 
  E
A
  E1 A1 COMMON DIMENSIONS
  Øp
MM INCH
Q

  SYMBOL
MIN NOM MAX MIN NOM MAX

H1
 
A 4.40 4.57 4.70 0.173 0.180 0.185
  Øp1
L2
D

A1 1.27 1.30 1.37 0.050 0.051 0.054

θ1
 
D1

A2 2.35 2.40 2.50 0.091 0.094 0.098

DEP
 
b 0.77 0.80 0.90 0.030 0.031 0.035
 
b2 1.17 1.27 1.36 0.046 0.050 0.054
  θ2
L1

θ3
c 0.48 0.50 0.56 0.019 0.020 0.022
  b2
D 15.40 15.60 15.80 0.606 0.614 0.622
 
L

b D1 9.00 9.10 9.20 0.354 0.358 0.362

 
DEP 0.05 0.10 0.20 0.002 0.004 0.008
 
E 9.80 10.00 10.20 0.386 0.394 0.402
  e
C A2 E1 – 8.70 – – 0.343 –
  e1
E2 9.80 10.00 10.20 0.386 0.394 0.401
 
Øp1 1.40 1.50 1.60 0.055 0.059 0.063
 
  e 2.54BSC 0.1BSC

  e1 5.08BSC 0.2BSC

  E2
H1 6.40 6.50 6.60 0.252 0.256 0.260

  L 12.75 13.50 13.65 0.502 0.531 0.537

  L1 – 3.10 3.30 – 0.122 0.130

  L2 2.50REF 0.098REF

  Øp 3.50 3.60 3.63 0.137 0.142 0.143

  Q 2.73 2.80 2.87 0.107 0.110 0.116

  θ1 5° 7° 9° 5° 7° 9°

  θ2 1° 3° 5° 1° 3° 5°

  θ3 1° 3° 5° 1° 3° 5°

 
TO-220 Part Marking Information
 
 
 
Lonten Logo
  Lonten
LSC07N65 Part Number
  ABYWW99
“AB”
  Foundry & Assembly Code “99”
Manufacturing Code
 
“YWW”
  Date Code
 
 

Version 6.0 2014 6 www.lonten.cc

 
   
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Mechanical Dimensions for TO-263
 
MM INCH
SYMBOL
MIN NOM MAX MIN NOM MAX

H2
A 4.40 4.57 4.70 0.173 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
L2

A2 2.59 2.69 2.79 0.102 0.106 0.110

A3 0.00 0.10 0.20 0.000 0.004 0.008
D1

b 0.77 0.813 0.90 0.030 0.032 0.035

H
b1 1.20 1.270 1.36 0.047 0.050 0.054
c 0.34 0.381 0.47 0.013 0.015 0.019
D1 8.60 8.70 8.80 0.339 0.343 0.346
L1

E 10.00 10.16 10.26 0.394 0.400 0.404

E2 10.00 10.10 10.20 0.394 0.398 0.402
L e 2.54 BSC 0.100 BSC
H 14.70 15.10 15.50 0.579 0.594 0.610
H2 1.17 1.27 1.40 0.046 0.050 0.055
L 2.00 2.30 2.60 0.079 0.091 0.102
L1 1.45 1.55 1.70 0.057 0.061 0.067
L2 2.50 REF 0.098 REF
L4 0.25 BSC 0.010 BSC
θ 0° 5° 8° 0° 5° 8°
θ1 5° 7° 9° 5° 7° 9°
θ2 1° 3° 5° 1° 3° 5°
ØP1 1.40 1.50 1.60 0.055 0.059 0.063
DEP 0.05 0.10 0.20 0.002 0.004 0.008

TO-263 Part Marking Information

 
 
 
 
Lonten Logo   Lonten
  LSE07N65 Part Number
  ABYWW99
“AB”
  Foundry & Assembly Code
“99”
  Manufacturing Code
“YWW”
  Date Code
 

Version 6.0 2014 7 www.lonten.cc

 
    
                                                     LSC07N65/LSE07N65/LSF07N65
                                                                                                                                                                                                          LonFET 
Mechanical Dimensions for TO-262

COMMON DIMENSIONS

A MM INCH
θ3 A1 SYMBOL
MIN NOM MAX MIN NOM MAX
θ1
A 4.45 4.57 4.70 0.175 0.180 0.185

L3
A1 1.22 1.27 1.32 0.048 0.050 0.052
PIN #1 ID
1脚标注 A2 2.29 2.67 2.92 0.090 0.105 0.115
DEP
b 0.71 0.813 0.97 0.028 0.032 0.038

b2 1.22 1.270 1.40 0.048 0.050 0.055

θ1 θ2
A2 c 0.38 0.381 0.76 0.015 0.015 0.030

D 23.20 23.61 24.02 0.913 0.930 0.946

b2 b
D1 8.38 8.70 8.89 0.330 0.343 0.350

E1 10.03 10.16 10.54 0.395 0.400 0.415

e 2.54 BSC 0.100 BSC

H2 - - 1.31 - - 0.052

L 13.34 13.73 14.10 0.525 0.541 0.555

L1 3.30 3.56 4.06 0.130 0.140 0.160

e c
L2 1.49 REF 0.059 REF
θ4
L3 3.4 REF 0.134 REF

ØP1 1.07 1.20 1.32 0.042 0.047 0.052

θ1 - 7° - - 7° -
E1
θ2 - 3° - - 3° -

θ3 - - 12° - - 12°

θ4 - - 3° - - 3°

DEP 0.10 0.18 0.25 0.004 0.007 0.010

TO-262 Part Marking Information

 
 
Lonten Logo Lonten
    LSF07N65 Part Number
  ABYWW99
“AB”
  Foundry & Assembly Code
“99”
  Manufacturing Code
“YWW”
  Date Code

 
 

Version 6.0 2014 8 www.lonten.cc