SCT3022AL

N-channel SiC power MOSFET Datasheet

Outline
TO-247N
VDSS 650V
RDS(on) (Typ.) 22m
ID 93A
PD 339W (1)(2)(3)

Inner circuit
(2)

Features (1) Gate

1) Low on-resistance (2) Drain
*1 (3) Source
(1)
2) Fast switching speed
3) Fast reverse recovery *1 Body Diode
(3)
4) Easy to parallel
Packaging specifications
5) Simple to drive
Packing Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm) -
Tape width (mm) -
Application Type
Basic ordering unit (pcs) 30
・Solar inverters
Taping code C11
・DC/DC converters
Marking SCT3022AL
・Switch mode power supplies
・Induction heating
・Motor drives

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source voltage VDSS 650 V
*1
Tc = 25°C ID 93 A
Continuous drain current
*1
Tc = 100°C ID 65 A
Pulsed drain current ID,pulse *2 232 A
Gate - Source voltage VGSS 4 to 22 V
Gate-Source Surge Voltage VGSS_surge 4 to 22 V
Recommended Drive Voltage VGS_op 0 / 18 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg 55 to 175 °C

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SCT3022AL Datasheet

Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal resistance, junction - case RthJC - 0.34 0.44 C/W

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 650 - - V
voltage

VDS = 650V, VGS = 0V

Zero gate voltage
IDSS Tj = 25°C - 1 10 A
drain current
Tj = 150°C - 2 -

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS VGS = 4V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 18.2mA 2.7 - 5.6 V
VGS = 18V, ID = 36A
Static drain - source *3
RDS(on) Tj = 25°C - 22 28.6 m
on - state resistance
Tj = 125°C - 29 -

Gate input resistance RG f = 1MHz, open drain - 5 - 

Example of acceptable Vgs waveform

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SCT3022AL Datasheet

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
*3
Transconductance gfs VDS = 10V, ID = 36A - 12.2 - S

Input capacitance Ciss VGS = 0V - 2208 -

Output capacitance Coss VDS = 500V - 118 - pF

Reverse transfer capacitance Crss f = 1MHz - 52 -

Effective output capacitance, VGS = 0V

Co(er) - 303 - pF
energy related VDS = 0V to 300V

Turn - on delay time td(on) *3 VDD = 300V, ID = 18A - 25 -

*3
Rise time tr VGS = 18V/0V - 53 -
ns
*3
Turn - off delay time td(off) RL = 17 - 61 -
*3
Fall time tf RG = 0 - 35 -

VDD = 300V, ID=36A

Turn - on switching loss Eon *3 - 252 -
VGS = 18V/0V
RG = 0 L=100H J
*3 *Eon includes diode
Turn - off switching loss Eoff - 201 -
reverse recovery

Gate Charge characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
*3
Total gate charge Qg VDD = 300V - 133 -
*3
Gate - Source charge Qgs ID = 36A - 31 - nC
*3
Gate - Drain charge Qgd VGS = 18V - 53 -

Gate plateau voltage V(plateau) VDD = 300V, ID = 36A - 9.6 - V

*1 Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Pulsed

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SCT3022AL Datasheet

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous, *1

IS - - 93 A
forward current
Tc = 25°C
Inverse diode direct current,
ISM *2 - - 232 A
pulsed
*3
Forward voltage VSD VGS = 0V, IS = 36A - 3.2 - V
*3
Reverse recovery time trr - 27 - ns
IF = 36A, VR = 300V
Reverse recovery charge Qrr *3 - 146 - nC
di/dt = 1100A/s
Peak reverse recovery current Irrm *3 - 10 - A

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

400 1000
Operation in this area is limited by RDS(ON)
350
Power Dissipation : PD [W]

300 100

Drain Current : ID [A]

250

200 10 PW = 100µs

150 PW = 1ms

100 1 PW = 10ms

PW = 100ms
50 Ta = 25ºC
Single Pulse
0 0.1
0 50 100 150 200 0.1 1 10 100 1000

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]

0.1

0.01

Ta = 25ºC
Single Pulse

0.001
0.0001 0.001 0.01 0.1 1 10

Pulse Width : PW [s]

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

90 45
20V Ta = 25ºC 20V Ta = 25ºC
80 Pulsed 40
18V 18V Pulsed
14V
70 12V 35 16V
16V

Drain Current : ID [A]

14V
Drain Current : ID [A]

60 30
12V
50 25

40 20 10V

30 10V 15

20 10
VGS= 8V
10 VGS= 8V 5

0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150ºC Typical Output Fig.7 Tj = 150ºC Typical Output

Characteristics(I) Characteristics(II)
90 45
20V 20V
80 40 18V 14V
18V 10V
70 35 12V
16V 14V 16V
10V
60 12V 30
Drain Current : ID [A]

Drain Current : ID [A]

50 25

40 20

30 15 VGS= 8V
VGS= 8V
20 10

10 Ta = 150ºC 5 Ta = 150ºC
Pulsed Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II)

100 90
VDS = 10V VDS = 10V
80
Pulsed Pulsed
70
10

Drain Current : ID [A]

Drain Current : ID [A]

60
Ta= 150ºC 50
1 Ta= 75ºC
Ta= 25ºC 40 Ta= 150ºC
Ta= 25ºC Ta= 75ºC
30 Ta= 25ºC
Ta= 25ºC
0.1
20

10

0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltage Fig.11 Transconductance vs. Drain Current

vs. Junction Temperature
6 10
VDS = 10V VDS = 10V
ID = 18.2mA Pulsed
5
Gate Threshold Voltage : V GS(th) [V]

Transconductance : gfs [S]

3 1
Ta = 150ºC
Ta = 75ºC
2 Ta = 25ºC
Ta = 25ºC
1

0 0.1
-50 0 50 100 150 200 0.1 1 10

Junction Temperature : Tj [ºC] Drain Current : ID [A]

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.12 Static Drain - Source On - State Fig.13 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature
0.09 0.09
Ta = 25ºC VGS = 18V
Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

0.08 Pulsed 0.08 Pulsed
0.07 0.07

0.06 0.06

0.05 0.05
: RDS(on) []

: RDS(on) []
ID = 62A
0.04 0.04

0.03 ID = 36A 0.03 ID = 62A

0.02 0.02
ID = 36A
0.01 0.01

0 0
6 8 10 12 14 16 18 20 22 -50 0 50 100 150 200

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current
0.1
Static Drain - Source On-State Resistance

Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
: RDS(on) []

VGS = 18V
Pulsed
0.01
1 10 100

Drain Current : ID [A]

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.15 Typical Capacitance Fig.16 Coss Stored Energy

vs. Drain - Source Voltage
10000 25
Ta = 25ºC
Ciss

Coss Stored Energy : EOSS [J]

20
1000
Coss
Capacitance : C [pF]

15

100 Crss
10

10
Ta = 25ºC 5
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 100 200 300 400

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics

10000 20
Ta = 25ºC Ta = 25ºC
tf VDD = 300V VDD = 300V
VGS = 18V ID = 36A
Gate - Source Voltage : VGS [V]

1000 RG = 0 15 Pulsed
Pulsed
Switching Time : t [ns]

100 td(off) 10
tr

td(on)
10 5

1 0
0.1 1 10 100 0 20 40 60 80 100 120 140

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.19 Typical Switching Loss Fig.20 Typical Switching Loss

vs. Drain - Source Voltage vs. Drain Current
500 2000
450 Ta = 25ºC 1800 Ta = 25ºC
ID=36A VDD=300V
400 VGS = 18V/0V 1600 VGS = 18V/0V

Switching Energy : E [J]

RG=0 RG=0
Switching Energy : E [J]

350 Eon 1400 L=100H

L=100H
300 1200

250 1000
Eon
200 800
Eoff
150 600
Eoff
100 400

50 200

0 0
100 200 300 400 500 0 20 40 60 80 100

Drain - Source Voltage : VDS [V] Drain Current : ID [A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance
2000

1800 Ta = 25ºC
VDD=300V
1600 ID=36A
VGS = 18V/0V
Switching Energy : E [J]

1400
L=100H
1200
Eon
1000

800
Eoff
600

400

200

0
0 5 10 15 20 25 30

External Gate Resistance : RG []

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SCT3022AL Datasheet

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 1000
Ta = 25ºC
Inverse Diode Forward Current : IS [A]

Reverse Recovery Time : trr [ns]

VGS = 0V di / dt = 1100A / us
Pulsed VR = 300V
10 VGS = 0V
Pulsed

1 100
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1

0.01 10
0 1 2 3 4 5 6 7 8 1 10 100

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]

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SCT3022AL Datasheet

Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Eon = ID×VDS Eoff = ID×VDS

Same type
device as Irr Vsurge
D.U.T. VDS

D.U.T.

ID
ID

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.

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equipment, medical systems, servers, solar cells, and power transmission systems.

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equipment, nuclear power control systems, and submarine repeaters.

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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
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R1102A
 Datasheet

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SCT3022AL - Web Page
Distribution Inventory

Part Number SCT3022AL

Package TO-247N
Unit Quantity 450
Minimum Package Quantity 30
Packing Type Tube
Constitution Materials List inquiry
RoHS Yes