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DATA SHEET
TDA8929T
Controller class-D audio amplifier
Preliminary specification 2001 Dec 11
File under Integrated Circuits, IC01
Philips Semiconductors Preliminary specification
2001 Dec 11 2
Philips Semiconductors Preliminary specification
2 APPLICATIONS
• Television sets
• Home-sound sets
• Multimedia systems
• All mains fed audio systems
• Car audio (boosters).
4 ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
TDA8929T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
2001 Dec 11 3
Philips Semiconductors Preliminary specification
2001 Dec 11 4
Philips Semiconductors Preliminary specification
6 BLOCK DIAGRAM
1 3
R fb
20
PWM1
4 WINDOW
IN1−
COMPARATOR 21
V/I EN1
5
IN1+
24
2 SW1
mute
SGND1
SGND 23
SGND REL1
7 SGND
OSC OSCILLATOR 19
STABILIZER STAB
15
mute MANAGER DIAGTMP
22
DIAGCUR
6
MODE MODE
SGND TDA8929T
16
EN2
SGND
SGND
11
SGND2 mute 13
SW2
8
IN2+
V/I 14
9 WINDOW REL2
IN2− COMPARATOR
17
PWM2
R fb
12 10 18
MGW148
2001 Dec 11 5
Philips Semiconductors Preliminary specification
7 PINNING
2001 Dec 11 6
Philips Semiconductors Preliminary specification
standby/ mute/on
mute
8.1 Controller
R
The controller contains (for two audio channels) two Pulse
Width Modulators (PWMs), two analog feedback loops MODE
and two differential input stages. This chip also contains
R
circuits common to both channels such as the oscillator, all
reference sources, the mode functionality and a digital SGND
MGW150
timing manager.
The pinning of the TDA8929T and the power stage devices Fig.3 Mode select switch circuitry.
are designed to have very short and straight connections
between the packages. For optimum performance the
interconnections between the packages must be as short
as possible.
Using this two-chip set an audio system with two
independent amplifier channels with high output power,
high efficiency (90%) for the system, low distortion and a
low quiescent current is obtained. The amplifiers channels
can be connected in the following configurations:
• Mono Bridge-Tied Load (BTL) amplifier
• Stereo Single-Ended (SE) amplifier.
2001 Dec 11 7
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2001 Dec 11
Philips Semiconductors
Controller class-D audio amplifier
VDDA
VSSA VDDA VDDD
+25 V
VSS1 VDD1 VDD2 VDD1
1 3 13 5
R fb TDA8926J 6 BOOT1
TDA8929T 20 PWM1
IN1− 4
23 REL1 REL1 2 DRIVER
Vi(1) INPUT PWM HIGH
STAGE 24 SW1 SW1 1 CONTROL
MODULATOR 7
IN1+ 5 AND
21 EN1 EN1 4 HANDSHAKE OUT1
DRIVER
SGND1 2 LOW
mute 19 STAB
STABI
STAB 9
SGND
22 VSS1
ROSC DIAGCUR
VSSA OSC 7
OSCILLATOR MANAGER 15 DIAGTMP TEMPERATURE SENSOR
AND
DIAG 3 VDD2
CURRENT PROTECTION
MODE 6
VMODE MODE 12 BOOT2
8
POWERUP 15
SGND
SGND2 11
mute 16 EN2 EN2 14 DRIVER SGND
IN2+ 8 HIGH (0 V)
CONTROL
13 SW2 SW2 17 11 OUT2
AND
Vi(2) INPUT PWM HANDSHAKE
STAGE MODULATOR 14 REL2 REL2 16 DRIVER
IN2− 9 LOW
17 PWM2
R fb
12 10 18 8 10
VSS2(sub) VDD2 VSSD VSS1 VSS2
VSSA VDDA
−25 V
Preliminary specification
VSSD
VSSA
MGU387
handbook, full pagewidth
TDA8929T
Fig.4 Typical application schematic of the class-D system using TDA8929T and the TDA8926J.
Philips Semiconductors Preliminary specification
8.3 Protections
The controller is provided with two diagnostic inputs. One
or both pins can be connected to the diagnostic output of
one or more power stages.
2001 Dec 11 9
Philips Semiconductors Preliminary specification
CONTROLLER
2001 Dec 11 10
Philips Semiconductors Preliminary specification
9 LIMITING VALUES
In accordance with the Absolute Maximum Rate System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VP supply voltage − ±30 V
VMODE(sw) mode select switch voltage referenced to SGND 0 5.5 V
Tstg storage temperature −55 +150 °C
Tamb ambient temperature −40 +85 °C
Tvj virtual junction temperature − 150 °C
Ves(HBM) electrostatic discharge note 1
voltage (HBM) all pins with respect to VDD (class A) −500 +500 V
all pins with respect to VSS (class A1) −1000 +1000 V
all pins with respect to GND (class B) −2500 +2500 V
all pins with respect to each other −2000 +2000 V
(class B)
Ves(MM) electrostatic discharge note 2
voltage (MM) all pins with respect to VDD (class A) −100 +100 V
all pins with respect to VSS (class B) −100 +100 V
all pins with respect to GND (class B) −300 +300 V
all pins with respect to each other −200 +200 V
(class B)
Notes
1. Human Body Model (HBM); Rs = 1500 Ω and C = 100 pF.
2. Machine Model (MM); Rs = 10 Ω; C = 200 pF and L = 0.75 µH.
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
In accordance with “SNW-FQ611-part D” if this device is used as an audio amplifier.
2001 Dec 11 11
Philips Semiconductors Preliminary specification
12 DC CHARACTERISTICS
VP = ±25 V; Tamb = 25 °C; measured in Fig.10; unless otherwise specified.
2001 Dec 11 12
Philips Semiconductors Preliminary specification
13 AC CHARACTERISTICS
2001 Dec 11 13
Philips Semiconductors Preliminary specification
mute
standby
Vth1− Vth1+ Vth2− Vth2+ VMODE
2001 Dec 11 14
Philips Semiconductors Preliminary specification
switching
VEN
VSTAB
VSS
VMODE
on
4V
mute
2V
standby
0 V (SGND)
110 ms >110 ms
MGW152
When switching from standby to mute there is a delay of 110 ms before the output starts switching. The audio signal is
available after the mode pin has been set to on, but not earlier than 220 ms after switching to mute.
switching
VEN
VSTAB
VSS
VMODE
on
4V
standby
0 V (SGND)
110 ms 110 ms
MGW151
When switching from standby to on there is a delay of 110 ms before the output starts switching.
After a second delay of 110 ms the audio signal is available.
2001 Dec 11 15
Philips Semiconductors Preliminary specification
14 SWITCHING CHARACTERISTICS
VP = ±25 V; Tamb = 25 °C; measured in Fig.10; unless otherwise specified.
Notes
1. Frequency set with ROSC, according to the formula in the functional description.
2. For tracking the external oscillator has to switch around SGND + 2.5 V with a minimum voltage of VOSC(ext).
Using the typical values of the TDA8926 and TDA8927 power stages:
3.5% < δ < 96.5%.
2001 Dec 11 16
Philips Semiconductors Preliminary specification
15 TEST AND APPLICATION INFORMATION The low-pass filter performs the demodulation, so that the
audio signal can be measured with an audio analyzer. For
15.1 Test circuit
measuring low distortion values, the speed of the level
The test diagram in Fig.10 can be used for stand alone shifter is important. Special care has to be taken at a
testing of the controller. Audio and mode input pins are sufficient supply decoupling and output waveforms without
configured as in the application. For the simulation of a ringing.
switching output power stage a simple level shifter can be
The handshake with the power stage is simulated by a
used. It converts the digital PWM signal from the controller
direct connection of the release inputs (REL1 and REL2)
(switching between VSS and VSS + 12 V level) to a
with the switch outputs (SW1 and SW2) of the controller.
PWM signal switching between VDD and VSS.
The enable outputs (EN1 and EN2) for waking-up the
A proposal for a simple level shifting circuit is given power stage are not used here, only the output level and
in Fig.9. timing are measured.
2 kΩ
10 Ω
BST82 33 Ω
PHC2300 PWM
+5 V
10 nF 42 Ω
1.33 kΩ
20 kΩ 10 Ω
switch
0/12 V
74LV14
10 kΩ
VSS VSS
MGW154
2001 Dec 11 17
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Philips Semiconductors
Controller class-D audio amplifier
100 nF
VSS VDD
47 µF
VSS1 VDD1
1 3
R fb PWM1
20
220 nF IN1− 4
WINDOW VDD
COMPARATOR 21 EN1
Vi(L) V/I V
IN1+ 5
24 SW1 LEVEL SHIFTER 30 kHz audio left
220 nF
SGND1 2 mute LOW-PASS audio
0/12 V −30 V/+30 V PWM analyzer
V
SGND 23 REL1
SGND
VSS
100 nF SGND
V
MODE
VSS
SGND TDA8929T
VMODE
16 EN2 VDD
V
SGND
SGND
SGND2 11
SGND mute SW2 LEVEL SHIFTER PWM audio right
13 30 kHz
220 nF LOW-PASS audio
IN2+ 8 0/12 V −30 V/+30 V analyzer
V
Vi(R) V/I 14 REL2
IN2− 9 WINDOW
COMPARATOR VSS
220 nF SGND
17 PWM2
R fb MGW153
12 10 18
VSS2(sub) VDD2 VSSD
Preliminary specification
47 µF
VSS
TDA8929T
VDD VSS
100 nF
J1 R19
5 kΩ
120 pF C3
1 14 mode select
R1 R20
2 13
9.1 kΩ 39 kΩ
3 12
on S1
MODE
4 HEF4047B 11 mute 6
off
5 10 D1
5V6
6 9 C44
220 nF
7 8 TDA8929T
GND
OSC
external clock 7
MGW155
2001 Dec 11 19
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2001 Dec 11
Philips Semiconductors
Controller class-D audio amplifier
VDDA mode select C1 220 nF
VDDD VSSD
VDDA C2 220 nF VSSA
R19 R20 C10 C11
39 kΩ 560 pF 560 pF
VDD1 VDD2 VSS2 VSS1 QGND
39 kΩ
on 3 10 12 1 R11 R12
MODE PWM2 C18
D1 mute 6 17 5.6 Ω 5.6 Ω
SW2 SW2 L2 1 nF OUT2−
(5.6 V) off S1 C44
220 nF 13 17 11
REL2 REL2 OUT2 Sumida 33 µH 1
14 16 C8 4 or 8 Ω
15 nF CDRH127-330 SE
R1 EN2 EN2 2
GND OSC 16 14
7 U2 VDDD U1 12 R15
BOOT2 OUT2+
27 kΩ 24 Ω C19
VSSA C14 1 nF
C3 R24 VDD1 470 nF
TDA8929T STAB 200 kΩ TDA8926J 5 VDDD C15 QGND
220 nF 19 POWERUP VDD2 220 nF
15 or OUT2−
SGND1 C4 D2 13
2 220 nF (7.5 V) C5
TDA8927J 2
GND
VSSD STAB C7 C6
GND 8Ω
SGND2 18 VSSA VSSD 9 220 nF 220 nF BTL
11 C43 220 nF VSS2 1
180 pF R10 DIAG 10 OUT1+
22 3 VSS1 C17
IN1+ DIAGCUR 1 kΩ QGND
5 8 VSSD 220 nF
CONTROLLER POWER STAGE
C22 C16
470 nF C20
330 pF IN1− BOOT1 R16 1 nF OUT1−
4
21
EN1 EN1 6 24 Ω
4 2
IN2+ REL1 REL1 C9 Sumida 33 µH 4 or 8 Ω
8 23 2 15 nF CDRH127-330 SE
C23 SW1 SW1 OUT1 1
J5 24 1 7
330 pF IN2− PWM1 L4 OUT1+
C21
J6 9 20 R13 R14 1 nF
15 5.6 Ω 5.6 Ω
C25 C24 C26 C27 QGND outputs
C12 C13
470 nF 470 nF 470 nF 470 nF n.c. 560 pF 560 pF
20
R5 R4 R6 R7 VDDD VSSD
QGND L7
10 kΩ 10 kΩ 10 kΩ 10 kΩ bead
C28 C29 C30 L5 VDDA
1 nF bead
1 nF 1 nF VDDD C40
C36 C37 47 µF
+25 V VDD C34 220 nF 220 nF
R21 C32 1500 µF (35 V)
1 10 kΩ 220 nF (35 V)
input 1 input 2 GND 2 GND
J1 J3 J4 3 C35
R22 C33 1500 µF C41
−25 V VSS 9.1 kΩ 220 nF (35 V) C38 C39 47 µF
QGND QGND 220 nF 220 nF
J2 VSSD (35 V)
C31 bead
1 nF L6 VSSA
inputs
VSS
QGND power supply MLD633
handbook, full pagewidth
Preliminary specification
TDA8929T
R21 and R22 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C23, C26 and C27 and close J5 and J6.
C22 and C23 influence the low-pass frequency response and should be tuned with the real load (loudspeaker).
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to VSS (close J2 and J3) for an input signal ground reference.
Fig.12 Two-chip class-D audio amplifier application diagram for TDA8926J or TDA8927J and TDA8929T.
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Philips Semiconductors
Controller class-D audio amplifier
TDA8926J/27J & TDA8929T
U1 D1
C24
C16 C40
C34 C25
C35 C26
C14 C41
L7 C27
state of D art
D2 Version 21 03-2001
L6
Out1 Out2 L5
ON
S1 MUTE
OFF
VDD
GND
VSS
In1 In2
L4
R19 C1
C6
R20 C44
C43 C38
C9
R16 C13 R10
C32 C12 R14 C36
R13
C17
U2 C22
C5 J5
C23
C15
R11 R12 J6
C33 C10 C37
R15 C11 C4 C3
C8
C7 C39
R1 C2
R24
In1 In2
L2 R5 R7
R21 R22
Out1 Out2 C28 R4 R6
C29
Preliminary specification
VDD VSS
C21 C19
GND J2 J3
J1 J4
TDA8929T
C20 C18 C30 C31
QGND
MLD634
Silk screen bottom, top view Copper bottom, top view
2001 Dec 11
Philips Semiconductors
Controller class-D audio amplifier
VDDA mode select C11 100 nF
VDDD VSSD
VDDA C12 100 nF VSSA
R1 R2 C24 C25
30 kΩ 560 pF 560 pF
VDD1 VDD2 VSS2 VSS1 QGND
39 kΩ VSS(sub)
on 3 10 12 1 VSSD R12 R13
MODE PWM2 19 L1 C40
D1 mute 6 17 5.6 Ω 5.6 Ω
bead L2 1 nF OUT2−
(5.6 V) off S1 C1 SW2 SW2
220 nF 13 16 9
REL2 REL2 OUT2 Sumida 33 µH 1
14 15 C26 4 or 8 Ω
15 nF CDRH127-330 SE
R3 EN2 EN2 2
GND OSC 16 13
7 U2 VDDD 10 C36 R16
U1 BOOT2 OUT2+
27 kΩ 470 nF 5.6 Ω C41
VSSA R18 1 nF
C2 VDD1
200 kΩ VDDD
TDA8929T STAB POWERUP 2 C38 QGND
220 nF 19 14 TDA8926TH VDD2 C31 220 nF
D2 or C29 OUT2−
SGND1 C13 C14
11 1500 µF
2 (7.5 V) 100 nF
100 nF STAB TDA8927TH C28 (35 V) 2
GND
VSSD VSSD 6 C27
100 GND 8Ω
SGND2 18 VSSA 100 nF STAB 100 nF BTL
11 7 VSS2 nF C32 1
C15 8 C30 1500 µF
180 pF 100 nF OUT1+
DIAGCUR R8 DIAG (35 V) C39
IN1+ VSS1 QGND
22 23 5 220 nF
5 CONTROLLER VSSD
1 kΩ POWER STAGE
C3 C42
330 pF C37 R17 1 nF
IN1− BOOT1 OUT1−
4
21
EN1 EN1 3 470 nF 5.6 Ω
24 2
IN2+ REL1 REL1 C33 L3 Sumida 33 µH 4 or 8 Ω
8 23 22 15 nF CDRH127-330 SE
OUT1 bead
C4 SW1 SW1 1
J5 24 21 4
22
R4 R5 R6 R7 VDDD VSSD
10 kΩ 10 kΩ 10 kΩ 10 kΩ QGND L7
C9 C10 bead R11
C16 L5 VDDA
1 nF bead 5.6 Ω
1 nF 1 nF
VDDD C22
C18 C19 47 µF
+25 V VDD
R9 100 nF 100 nF (35 V)
1 10 kΩ
input 1 input 2
GND 2 GND
J1 J3 J4
3 R10
QGND C23
QGND QGND −25 V VSS 9.1 kΩ C20 C21 47 µF
J2 100 nF 100 nF (35 V)
VSSD
C17 bead
inputs 1 nF L6
VSS VSSA
QGND power supply MGW232
Preliminary specification
handbook, full pagewidth
TDA8929T
R9 and R10 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C4, C7 and C8 and close J5 and J6.
Demodulation coils L2 and L4 should be matched in BTL.
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to VSS (close J2 and J3).
Fig.14 Two-chip class-D audio amplifier application diagram for TDA8926TH or TDA8927TH and TDA8929T.
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Philips Semiconductors
Controller class-D audio amplifier
TDA8926TH/27TH
C37 C31 TDA8929T
L3
C22
D1
C34
Jan 2001 C1 C15 C11 C20
R14 R8
C33 R1 R2
R15
L4 C35
C29 U1 U2
C28 C3 C18
C14
C27 C4
C30
L5 C12 C19
C25
R13 C26 C13 C2
R12 C21
C24 J6
L7 R11 R3 C8
J5
C7
R17 C39 C38 R16 R9 R10 C10 C9
C5
R7 R4
R6 R5 C6
J2
C43 C42 C41 C40 C16 C17 J3
J4 J1
QGND
Preliminary specification
MGW147
Silk screen bottom, top view Copper bottom, top view
TDA8929T
Fig.15 Printed-circuit board layout for TDA8926TH or TDA8927TH and TDA8929T.
Philips Semiconductors Preliminary specification
2001 Dec 11 24
Philips Semiconductors Preliminary specification
MLD627 MLD628
102 102
handbook, halfpage handbook, halfpage
THD+N THD+N
(%) (%)
10 10
1 1
(1)
(1)
10−1 10−1
(2)
(3)
10−3 −2 10−3
10 10−1 1 10 102 103 10 102 103 104 105
Po (W) f i (Hz)
2 × 8 Ω SE; VP = ±25 V:
(1) 10 kHz. 2 × 8 Ω SE; VP = ±25 V:
(2) 1 kHz. (1) Po = 10 W.
(3) 100 Hz. (2) Po = 1 W.
Fig.16 THD + N as a function of output power. Fig.17 THD + N as a function of input frequency.
2001 Dec 11 25
Philips Semiconductors Preliminary specification
MLD629 MLD630
102 102
handbook, halfpage handbook, halfpage
THD+N THD+N
(%) (%)
10 10
1 1
(1) (1)
10−1 10−1
(2)
(2)
10−3 −2 10−3
10 10−1 1 10 102 103 10 102 103 104 105
Po (W) f i (Hz)
2 × 4 Ω SE; VP = ±25 V:
(1) 10 kHz. 2 × 4 Ω SE; VP = ±25 V:
(2) 1 kHz. (1) Po = 10 W.
(3) 100 Hz. (2) Po = 1 W.
Fig.18 THD + N as a function of output power. Fig.19 THD + N as a function of input frequency.
MLD631 MLD632
102 102
handbook, halfpage handbook, halfpage
THD+N THD+N
(%) (%)
10 10
1 1
(1) (1)
10−1 10−1
(2)
(2)
10−2 10−2
(3)
10−3 −2 10−3
10 10−1 1 10 102 103 10 102 103 104 105
Po (W) f i (Hz)
1 × 8 Ω BTL; VP = ±25 V:
(1) 10 kHz. 1 × 8 Ω BTL; VP = ±25 V:
(2) 1 kHz. (1) Po = 10 W.
(3) 100 Hz. (2) Po = 1 W.
Fig.20 THD + N as a function of output power. Fig.21 THD + N as a function of input frequency.
2001 Dec 11 26
Philips Semiconductors Preliminary specification
MLD609 MLD610
25 100
handbook, halfpage handbook, halfpage
(3)
P η (1)
(W) (%)
(2)
20 80
15 60
(1) (2)
10 40
(3)
5 20
0 0
10−2 10−1 1 10 102 103 0 30 60 90 120 150
Po (W) Po (W)
VP = ±25 V; fi = 1 kHz:
(1) 2 × 4 Ω SE. VP = ±25 V; fi = 1 kHz:
(2) 1 × 8 Ω BTL. (1) 2 × 4 Ω SE.
(3) 2 × 8 Ω SE. (2) 1 × 8 Ω BTL.
(3) 2 × 8 Ω SE.
Fig.22 Power dissipation as a function of output
power. Fig.23 Efficiency as a function of output power.
MLD611 MLD612
200 200
handbook, halfpage handbook, halfpage
Po Po (2)
(W) (W)
160 160
(2)
120 120
(1)
(1) (3)
80 80
(3)
(4)
(4)
40 40
0 0
10 15 20 25 30 35 10 15 20 25 30 35
VP (V) VP (V)
Fig.24 Output power as a function of supply Fig.25 Output power as a function of supply
voltage. voltage.
2001 Dec 11 27
Philips Semiconductors Preliminary specification
MLD613 MLD614
0 0
handbook, halfpage handbook, halfpage
αcs αcs
(dB) (dB)
−20 −20
−40 −40
−60 (1)
−60
(1)
−100 −100
10 102 103 104 105 10 102 103 104 105
f i (Hz) f i (Hz)
Fig.26 Channel separation as a function of input Fig.27 Channel separation as a function of input
frequency. frequency.
MLD615 MLD616
45 45
handbook, halfpage handbook, halfpage
G G
(dB) (dB)
40 40
(1)
35 35
(1)
(2)
30 30
(2)
(3)
25 (3) 25
20 20
10 102 103 104 105 10 102 103 104 105
f i (Hz) f i (Hz)
Fig.28 Gain as a function of input frequency. Fig.29 Gain as a function of input frequency.
2001 Dec 11 28
Philips Semiconductors Preliminary specification
MLD617 MLD618
0 0
handbook, halfpage handbook, halfpage
SVRR SVRR
(dB) (dB)
−20 −20
−40 −40
(1)
(1)
−60 −60 (2)
(2)
(3)
(3)
−80 −80
−100 −100
10 102 103 104 105 0 1 2 3 4 5
f i (Hz)
Vripple (V)
VP = ±25 V; Vripple = 2 V (p-p) with respect to GND: VP = ±25 V; Vripple with respect to GND:
(1) Both supply lines in anti-phase. (1) fripple = 1 kHz.
(2) Both supply lines in phase. (2) fripple = 100 Hz.
(3) One supply line rippled. (3) fripple = 10 Hz.
Fig.30 SVRR as a function of input frequency. Fig.31 SVRR as a function of Vripple (p-p).
MLD619 MLD620
100 380
handbook, halfpage handbook, halfpage
Iq fclk
(mA) (kHz)
80 372
60 364
40 356
20 348
0 340
0 10 20 30 37.5 0 10 20 30 40
VP (V) VP (V)
RL = open. RL = open.
Fig.32 Quiescent current as a function of supply Fig.33 Clock frequency as a function of supply
voltage. voltage.
2001 Dec 11 29
Philips Semiconductors Preliminary specification
MLD621 MLD622
5 5
handbook, halfpage handbook, halfpage
Vripple
SVRR
(V) (%)
4 4
3 3
(1)
(1)
2 2
1 (2) 1
(2)
0 0
10−2 10−1 1 10 102 10 102 103 104
Po (W) f i (Hz)
MLD623 MLD624
10 50
handbook, halfpage handbook, halfpage
Po
THD+N
(W)
(%)
40
1
(1)
30
10−1
(2) 20
(3)
10−2
10
10−3 0
100 200 300 400 500 600 100 200 300 400 500 600
fclk (kHz) fclk (kHz)
VP = ±25 V; Po = 1 W in 2 × 8 Ω:
(1) 10 kHz.
VP = ±25 V; RL = 2 × 8 Ω; fi = 1 kHz; THD + N = 10%.
(2) 1 kHz.
(3) 100 Hz.
Fig.37 Output power as a function of clock
Fig.36 THD + N as a function of clock frequency. frequency.
2001 Dec 11 30
Philips Semiconductors Preliminary specification
MLD625 MLD626
150 1000
handbook, halfpage handbook, halfpage
Iq Vr(PWM)
(mA) (mV)
120 800
90 600
60 400
30 200
0 0
100 200 300 400 500 600 100 200 300 400 500 600
fclk (kHz) fclk (kHz)
Fig.38 Quiescent current as a function of clock Fig.39 PWM residual voltage as a function of clock
frequency. frequency.
2001 Dec 11 31
Philips Semiconductors Preliminary specification
16 PACKAGE OUTLINE
SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
D E A
X
y HE v M A
24 13
Q
A2 A
A1 (A 3)
pin 1 index
θ
Lp
L
1 12 detail X
e w M
bp
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
97-05-22
SOT137-1 075E05 MS-013
99-12-27
2001 Dec 11 32
Philips Semiconductors Preliminary specification
Several methods exist for reflowing; for example, During placement and before soldering, the package must
convection or convection/infrared heating in a conveyor be fixed with a droplet of adhesive. The adhesive can be
type oven. Throughput times (preheating, soldering and applied by screen printing, pin transfer or syringe
cooling) vary between 100 and 200 seconds depending dispensing. The package can be soldered after the
on heating method. adhesive is cured.
Typical reflow peak temperatures range from Typical dwell time is 4 seconds at 250 °C.
215 to 250 °C. The top-surface temperature of the A mildly-activated flux will eliminate the need for removal
packages should preferable be kept below 220 °C for of corrosive residues in most applications.
thick/large packages, and below 235 °C for small/thin
packages. 17.4 Manual soldering
Fix the component by first soldering two
17.3 Wave soldering diagonally-opposite end leads. Use a low voltage (24 V or
Conventional single wave soldering is not recommended less) soldering iron applied to the flat part of the lead.
for surface mount devices (SMDs) or printed-circuit boards Contact time must be limited to 10 seconds at up to
with a high component density, as solder bridging and 300 °C.
non-wetting can present major problems. When using a dedicated tool, all other leads can be
To overcome these problems the double-wave soldering soldered in one operation within 2 to 5 seconds between
method was specifically developed. 270 and 320 °C.
2001 Dec 11 33
Philips Semiconductors Preliminary specification
17.5 Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE REFLOW(1)
BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable(2) suitable
PLCC(3), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(3)(4) suitable
SSOP, TSSOP, VSO not recommended(5) suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2001 Dec 11 34
Philips Semiconductors Preliminary specification
PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
19 DEFINITIONS 20 DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.
2001 Dec 11 35
Philips Semiconductors – a worldwide company
Contact information
Printed in The Netherlands 753503/01/pp36 Date of release: 2001 Dec 11 Document order number: 9397 750 08189