Basic Electronics

Chapter 3
Bipolar Junction Transistor

Prof. Mahendra M. Dixit,

Department of Electronics and Communication Engineering,
S. D. M. College of Engineering and Technology, Dharwad
 Presentation Outline
 When? Why? What?
 Types of Bipolar Junction Transistors MMD
 Types of Bipolar Junction Transistors (BJT)
 Operation of NPN Transistor
 Transistor Voltages and Currents
 Unbiased and Biased Transistor
 Leakage Current Concept
 Definition of αdc and βdc and Relationship between αdc and βdc
 Current Amplification
 Voltage Amplification
 Classification of Transistor Configuration
- Common Base (CB) Configuration
- Common Emitter (CE) Configuration
- Common Collector (CC) Configuration
 Comparison between Transistor Configuration
 Biasing of a Transistor and Need for Biasing
 DC Load Line and Operating Point
 Transistor Biasing Techniques
 Base Biasing
 Collector to Base Biasing
 Voltage Divider Biasing
 Comparison between Biasing Techniques
 When? Why? What?
Invention: In 1951, by William Shockley
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 When? Why? What? (Contd…)
Shockley obtained a patent for this invention on September 25, 1951.
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 When? Why? What? (Contd…)
For Amplification Applications MMD
To overcome disadvantages of Vacuum Tubes
[ - Large Filament Power
- Huge Operating Voltage
- Large Transition Time (Low Efficiency)
- Big Size and Larger Power Dissipation ]
Transistor invented because it has
 When? Why? What? (Contd…)
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Since Transistor is invented for Amplification process, and it
is achieved in Transistor by passing Input Current Signal from a
region of Low Resistance to a region of High Resistance.
This concept of Transfer of Resistance has given the name
TRANSfer-resISTOR (TRANSISTOR).
Types of Transistor:
1. Unipolar Junction Transistor
- Current Conduction is due to only One Type of Carriers.
Majority Carriers
2. Bipolar Juction Transistor
- Current Conduction is due to Both Types of carriers,
Hole and Electron
Types of Bipolar Junction Transistors (BJT)
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Structure (Construction & Symbol) of BJT

 Transistors (Contd…)
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Question: Why we can not replace transistor by back to back

connected diodes?
Hint: Because Doping Level concentration requirements of
Transistor.
Diffusion can not take place in back to back connected
diodes. (Just think on it…..)
Unbiased Transistors
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 Biased Transistors
To operate Transistor as an Amplifier, it is necessary to
correctly bias the transistor with appropriate external voltages. MMD
Transistor is operated in Three (03) regions when we bias.
Operation of NPN Transistors
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Operation of NPN Transistors (Contd…)
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Transistors Voltages and Currents
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 Transistors Conventional Current Direction
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Example: In a certain transistor, the emitter current is 1.02 times as large

as the collector current. If the emitter current is 12 mA, find the
base current.
 Leakage Current Concept
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Since, Emitter is open circuit, No Current flows, Hence

Leakage Current Concept (Contd…)
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Definition of αdc and βdc
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Relationship between of αdc and βdc
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Relationship between of αdc and βdc (Contd…)
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Current Amplification
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Voltage Amplification
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Voltage Amplification (Contd..)
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Voltage Amplification (Contd..)
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Voltage Amplification (Contd..)
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 BJT Configuration
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Classification of BJT Configurations
Common Base (CB) Configuration
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Input Characteristics of CB Configuration
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Output Characteristics of CB Configuration
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Transfer Characteristics of CB Configuration
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Punch-Through Effect
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Common Emitter (CE) Configuration
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Input Characteristics of CE Configuration
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Output Characteristics of CE Configuration
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Question: Draw and explain Common Collector Configuration of

Transistor along with Input and Output Characteristics
Transfer Characteristics of CE Configuration
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Comparison between Transistor Configuration

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Biasing of a Transistor & Need for Biasing
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DC Load Line and Operating Point
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DC Load Line and Operating Point
(Contd…) MMD
DC Load Line and Operating Point (Contd…)

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 Selection of Operating
Case (1) Point P on Load Line
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 Selection of Operating
Case (2) Point R on Load Line
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 Selection of Operating
Case (3) Point Q on Load Line MMD
 Transistor Biasing Circuits
Biasing Circuits of Transistor is classified into Three MM
D
categories. Namely,
1. Base Bias or Fixed Bias Circuit
2. Collector to Base Bias Circuit
3. Voltage Divider Biasing Circuit or Universal Biasing
Circuit
Requirements of a Biasing Circuits
Base Bias or Fixed Bias Circuit
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Base Bias or Fixed Bias Circuit
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 Base Bias or Fixed Bias Circuit (Contd)
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• It is important to note that, Base Current IB is controlled by
RB and Collector Current is related to Base Current by a
constant β, the magnitude of Collector Current is not a
function of the collector resistance RC.
• Changing RC to any level will not affect the level of Base
Current IB or Collector Current IC as long as we remain in
Active Region of the device. However, the change in RC will
change the value of VCE
Base Bias or Fixed Bias Circuit (Contd)
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Collector to Base Bias Circuit
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Collector to Base Bias Circuit (Contd..)
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 Collector to Base Bias Circuit (Contd..)
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 If there is a change in β due to piece to piece variation between

transistors or if there is a change due to temperature, then collector
current tends to increase, since IC = β.IB + ICEO.
 As a result, the voltage drop RC increases. Since, supply voltage VCC
is constant, due to increase in ICRC, VCE decreases. Due to
reduction in VCE, IB reduces. As IC depends on IB, decrease in IB
reduces the original increase in IC. The result is that, the circuit
tends to maintain a stable value of IC, keeping Q-point fixed.
Voltage Divider Biasing Circuit
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Voltage Divider Biasing Circuit (Contd..)
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Voltage Divider Biasing Circuit (Contd..)
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Comparisons of Biasing Circuit
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Thank You