Basic Electronics Lab (Experiment 1 Report)

Submitted By:
Group: G7
Ashutosh Garg(2018MEB1213)
Ashwin Goyal(2018MEB1214)

Title:​ To study the V-I characteristics of the PN junction diode.

Objective:​ The objectives of this lab exercise are to draw and analyze the V-I characteristics of
PN junction diode and calculate its static and dynamic resistance.

Components and equipment: ​PN junction diodes (1N 4007), resistance (1 K), power
supply, breadboard etc.

Introduction: A diode is a nonlinear circuit element. Generally, there is a band marked at its
cathode for its identification.

At a given operating point, the static and dynamic resistance of a diode can be determined
from its characteristics as shown in Fig. 2. The static or dc resistance, RD, of the diode at the
operating points (the point where the load line intersects the diode characteristics), Q, is
simply the quotient of the corresponding levels of VD and ID. The dc resistance levels at the
knee and below will be greater than the resistance levels obtained for the vertical rise section
of the characteristics.
The diode circuits generally operate with varying inputs, which will move the instantaneous
operating point up and down a region of the characteristics and defines a specific change in
current and voltage. Dynamic or ac Resistance, rd, is defined as the quotient of this change in
voltage and change in current around the dc operating point.

1
Circuit Diagram:

Procedure:
Forward Bias characteristics:
1. Assemble the circuit on your breadboard as shown in Fig 1(a). Connect to the 0-3V dc
power supply.
2. Switch on the power supply. Slowly increase the supply voltage in steps of 0.1 Volt using
the fine adjustment knob and note down the corresponding readings of diode current. When
you find the change in current is larger (which means you have already crossed the threshold
point!), increase the supply voltage in steps of 0.1 or smaller to note down current.

3. Using DSO in appropriate modes, measure the voltage drop across the diode. Using multi-
meter, measure the current in the circuit. Switch off the supply after taking sufficient
readings.
4. Plot the I~V characteristics and estimate the threshold voltage.
5. Choose two operating points below and above (i.e. 5 mV) the threshold point and
determine the static and dynamic resistance at each of the points.

Reverse Bias characteristics:

1. Assemble the circuit on your breadboard as shown in Fig 1(b). Connect to the 0-5V dc
power supply.
2. Switch on the supply. Increase the supply voltage in steps of 0.5 Volt to note down the
diode current.
3. Use DSO and multi-meter for voltage and current measurements, respectively. Keep in
mind that magnitude of the current flowing in the circuit will be very small, so choose the current
range properly. Switch off the supply after taking sufficient readings.
4. Plot the I~V characteristics on the same graph sheet and estimate the reverse saturation
current.

DATA COLLECTED
Forward Bias Data:

2
V​in​(V) V​d​(V) I​d​(mA)
0 0.021 0
0.1 0.096 0
0.2 0.197 0
0.3 0.298 0
0.4 0.388 0
0.5 0.444 0.04
0.6 0.48 0.11
0.7 0.503 0.19
0.8 0.521 0.27
0.9 0.534 0.37
1 0.544 0.45
1.6 0.562 1.05
1.7 0.567 1.15
1.8 0.571 1.25
1.9 0.575 1.34
2 0.578 1.44
2.1 0.581 1.53
2.2 0.585 1.64
2.5 0.593 1.93
3 0.604 2.43
3.5 0.612 2.93
4 0.62 3.43
4.3 0.624 3.74
4.7 0.629 4.15
5.5 0.638 4.96
6.5 0.647 6.1
7.5 0.654 7.01
8 0.657 7.52
8.6 0.661 8.13
9.6 0.667 9.16
10.4 0.671 9.99

Reverse Bias Data:

V​in​(V) V​d​(V) I​d​(​μ​A)
-0.1 -0.096 0

3
-0.2 -0.197 0
-0.4 -0.4 0
-0.5 -0.493 0
-0.6 -0.595 0
-0.8 -0.798 0
-1 -0.992 0
-1.1 -1.098 0
-1.2 -1.2 -0.1
-1.3 -1.3 -0.1
-2 -1.993 -0.1
-2.5 -2.495 -0.2
-3 -2.992 -0.3
-3.5 -3.494 -0.3
-4 -3.992 -0.4
-4.5 -4.48 -0.5
-5.5 -5.47 -0.6
-6.6 -6.61 -0.7
-7.5 -7.5 -0.8
-9 -9 -1
-15 -14.99 -1.7
-20 -19.99 -2.3
-24.5 -24.49 -2.9

GRAPHS OBTAINED FROM DATA

4
 V(V)

Calculations:

Results:
1. Cut in Voltage = ........
2. VDC and IDC for Q point = ................. and .........
3. Static resistance = ........
4. Dynamic resistance = .......

5
Precautions:
1. The circuit should be checked before giving the power supply.
2. The diode should be connected in a proper manner for reverse biased and forward
biased experiment respectively.
3. The multimeter used as ammeter should be connected in series and multimeter used as
voltmeter should be connected in parallel to the diode.

Post-lab questions:
Q i)​ Describe the behaviour of the V-I curve for diode using detailed device operation.
Answer:​ When the diode is forward biased, current will be passed through it. When it is reverse
biased, a negligible current will pass. A PN junction needs a bias voltage of a certain polarity
and amplitude for current to flow. This bias voltage also controls the resistance of the junction
and therefore the flow of current through it. I-V characteristics show the relation between diode
current and diode voltage. For forward bias, initially the current passed is negligible, but after a
certain threshold voltage, the current shoots up. For reverse bias, after a certain current the
voltage will remain constant. All this is shown through the I-V graph.
A diode starts out as a large resistance, as you apply voltage to it that resistance remains fairly
constant until you approach the forward breakdown voltage. At that point, the resistance starts
to drop.

Q ii)​ The threshold voltage for normal diode is __V (What type of a diode it is, Si/Ge?)
Answer:​ T ​ he threshold voltage for a normal diode is ​0.3V for Ge and 0.7 for Silicon.​

Q iii)​ Draw a Zener diode characteristics.

Answer: