INA326

INA3
26 INA3
27
INA327
SBOS222D – NOVEMBER 2001 – REVISED NOVEMBER 2004

Precision, Rail-to-Rail I/O

INSTRUMENTATION AMPLIFIER

FEATURES DESCRIPTION
● PRECISION The INA326 and INA327 (with shutdown) are high-perfor-
LOW OFFSET: 100µV (max) mance, low-cost, precision instrumentation amplifiers with
rail-to-rail input and output. They are true single-supply
LOW OFFSET DRIFT: 0.4µV/°C (max)
instrumentation amplifiers with very low DC errors and input
EXCELLENT LONG-TERM STABILITY common-mode ranges that extends beyond the positive and
VERY-LOW 1/f NOISE negative rails. These features make them suitable for appli-
● TRUE RAIL-TO-RAIL I/O cations ranging from general-purpose to high-accuracy.
INPUT COMMON-MODE RANGE: Excellent long-term stability and very low 1/f noise assure
20mV Below Negative Rail to 100mV Above low offset voltage and drift throughout the life of the product.
Positive Rail The INA326 (without shutdown) comes in the MSOP-8 pack-
WIDE OUTPUT SWING: Within 10mV of Rails age. The INA327 (with shutdown) is offered in an MSOP-10.
SUPPLY RANGE: Single +2.7V to +5.5V Both are specified over the industrial temperature range,
–40°C to +85°C, with operation from –40°C to +125°C.
● SMALL SIZE
microPACKAGE: MSOP-8, MSOP-10
INA326 AND INA327 RELATED PRODUCTS
● LOW COST PRODUCT FEATURES
INA337 Precision, 0.4µV/°C Drift, Specified –40°C to +125°C
APPLICATIONS INA114
INA118
50µV VOS, 0.5nA IB, 115dB CMR, 3mA IQ, 0.25µV/°C Drift
50µV VOS, 1nA IB, 120dB CMR, 385µA IQ, 0.5µV/°C Drift
● LOW-LEVEL TRANSDUCER AMPLIFIER FOR INA122 250µV VOS, –10nA IB, 85µA IQ, Rail-to-Rail Output, 3µV/°C Drift
INA128 50µV VOS, 2nA IB, 125dB CMR, 750µA IQ, 0.5µV/°C Drift
BRIDGES, LOAD CELLS, THERMOCOUPLES
INA321 500µV VOS, 0.5pA IB, 94dB CMRR, 60µA IQ, Rail-to-Rail Output
● WIDE DYNAMIC RANGE SENSOR
MEASUREMENTS
V+ V−
● HIGH-RESOLUTION TEST SYSTEMS
2 7
● WEIGH SCALES VIN−
1 4
● MULTI-CHANNEL DATA ACQUISITION
6
SYSTEMS R1 INA326 VO

● MEDICAL INSTRUMENTATION 8
5 G = 2(R2/R1)
3
● GENERAL-PURPOSE VIN+

R2 C2

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright © 2001-2004, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

www.ti.com
PACKAGE/ORDERING INFORMATION(1)
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
INA326 MSOP-8 DGK –40°C to +85°C B26 INA326EA/250 Tape and Reel, 250
" " " " " INA326EA/2K5 Tape and Reel, 2500

INA327 MSOP-10 DGS –40°C to +85°C B27 INA327EA/250 Tape and Reel, 250
" " " " " INA327EA/2K5 Tape and Reel, 2500

NOTE: (1) For the most current package and ordering information, download the latest version of this data sheet and see the Package Option Addendum located
at the end of the data sheet.

ABSOLUTE MAXIMUM RATINGS(1) ELECTROSTATIC

Supply Voltage .................................................................................. +5.5V
Signal Input Terminals: Voltage(2) .............................. –0.5V to (V+) + 0.5V DISCHARGE SENSITIVITY
Current(2) ................................................... ±10mA
Output Short-Circuit ................................................................. Continuous This integrated circuit can be damaged by ESD. Texas
Operating Temperature Range ....................................... –40°C to +125°C Instruments recommends that all integrated circuits be handled
Storage Temperature Range .......................................... –65°C to +150°C
with appropriate precautions. Failure to observe proper han-
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C dling and installation procedures can cause damage.
NOTES: (1) Stresses above these ratings may cause permanent damage. ESD damage can range from subtle performance degrada-
Exposure to absolute maximum conditions for extended periods may degrade tion to complete device failure. Precision integrated circuits
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
may be more susceptible to damage because very small
(2) Input terminals are diode clamped to the power-supply rails. Input signals that parametric changes could cause the device not to meet its
can swing more than 0.5V beyond the supply rails should be current limited to published specifications.
10mA or less.

PIN CONFIGURATION

Top View
INA326 INA327

R1 1 8 R1 R1 1 10 R1

VIN− 2 7 V+ VIN− 2 9 V+

VIN+ 3 6 VO VIN+ 3 8 VO

V− 4 5 R2 V− 4 7 R2

(Connect to V+) 5 6 Enable

MSOP- 8

MSOP- 10

2
INA326, INA327
www.ti.com SBOS222D
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V
BOLDFACE limits apply over the specified temperature range, TA = –40°C to +85°C
At TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.
INA326EA, INA327EA
PARAMETER CONDITION MIN TYP MAX UNITS
INPUT
Offset Voltage, RTI VOS VS = +5V, VCM = VS /2 ±20 ±100 µV
Over Temperature ±124 µV
vs Temperature dVOS/dT ±0.1 ±0.4 µV/°C
vs Power Supply PSR VS = +2.7V to +5.5V, VCM = VS /2 ±20 ±3 µV/V
Long-Term Stability See Note (1)
Input Impedance, Differential 1010 || 2 Ω || pF
Common-Mode 1010 || 14 Ω || pF
Input Voltage Range (V–) – 0.02 (V+) + 0.1 V
Safe Input Voltage (V–) – 0.5 (V+) + 0.5 V
Common-Mode Rejection CMR VS = +5V, VCM = (V–) – 0.02V to (V+) + 0.1V 100 114 dB
Over Temperature 94 dB
INPUT BIAS CURRENT VCM = VS /2
Bias Current IB VS = +5V ±0.2 ±2 nA
vs Temperature See Typical Characteristics
Offset Current IOS VS = +5V ±0.2 ±2 nA
NOISE
Voltage Noise, RTI RS = 0Ω, G = 100, R1 = 2kΩ, R2 = 100kΩ
f = 10Hz 33 nV/ √Hz
f = 100Hz 33 nV/ √Hz
f = 1kHz 33 nV/ √Hz
f = 0.01Hz to 10Hz 0.8 µVp-p
Voltage Noise, RTI RS = 0Ω, G = 10, R1 = 20kΩ, R2 = 100kΩ
f = 10Hz 120 nV/ √Hz
f = 100Hz 97 nV/ √Hz
f = 1kHz 97 nV/ √Hz
f = 0.01Hz to 10Hz 4 µVp-p
Current Noise, RTI
f = 1kHz 0.15 pA/ √Hz
f = 0.01Hz to 10Hz 4.2 pAp-p
Output Ripple, VO Filtered(2) See Applications Information
GAIN
Gain Equation G = 2(R2/R1)
Range of Gain < 0.1 > 10000 V/V
Gain Error(3) G = 10, 100, VS = +5V, VO = 0.075V to 4.925V ±0.08 ±0.2 %
vs Temperature G = 10, 100, VS = +5V, VO = 0.075V to 4.925V ±6 ±25 ppm/°C
Nonlinearity G = 10, 100, VS = +5V, VO = 0.075V to 4.925V ±0.004 ±0.01 % of FS
OUTPUT
Voltage Output Swing from Rail RL = 100kΩ 5 mV
RL = 10kΩ, VS = +5V 75 10 mV
Over Temperature 75 mV
Capacitive Load Drive 500 pF
Short-Circuit Current ISC ±25 mA
INTERNAL OSCILLATOR
Frequency of Auto-Correction 90 kHz
Accuracy ±20 %
FREQUENCY RESPONSE
Bandwidth(4), –3dB BW G = 1 to 1k 1 kHz
Slew Rate(4) SR VS = +5V, All Gains, CL = 100pF Filter Limited
Settling Time(4), 0.1% tS 1kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF 0.95 ms
0.01% 1.3 ms
0.1% 10kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF 130 µs
0.01% 160 µs
Overload Recovery(4) 1kHz Filter, 50% Output Overload, G = 1 to 1k 30 µs
10kHz Filter, 50% Output Overload, G = 1 to 1k 5 µs

INA326, INA327 3
SBOS222D www.ti.com
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V (Cont.)
BOLDFACE limits apply over the specified temperature range, TA = –40°C to +85°C
At TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.

INA326EA, INA327EA
PARAMETER CONDITION MIN TYP MAX UNITS

POWER SUPPLY
Specified Voltage Range +2.7 +5.5 V
Quiescent Current IQ IO = 0, Diff VIN = 0V, VS = +5V 2.4 3.4 mA
Over Temperature 3.7 mA
SHUTDOWN
Disable (Logic Low Threshold) 0.25 V
Enable (Logic High Threshold) 1.6 V
Enable Time(5) 75 µs
Disable Time 100 µs
Shutdown Current and Enable Pin Current VS = +5V, Disabled 2 5 µA
TEMPERATURE RANGE
Specified Range –40 +85 °C
Operating Range –40 +125 °C
Storage Range –65 +150 °C
Thermal Resistance θJA MSOP-8, MSOP-10 Surface-Mount 150 °C/W

NOTES: (1) 1000-hour life test at 150°C demonstrated randomly distributed variation in the range of measurement limits—approximately 10µV. (2) See Applications
Information section, and Figures 1 and 3. (3) Does not include error and TCR of external gain-setting resistors. (4) Dynamic response is limited by filtering. Higher
bandwidths can be achieved by adjusting the filter. (5) See Typical Characteristics, “Input Offset Voltage vs Warm-Up Time”.

4
INA326, INA327
www.ti.com SBOS222D
TYPICAL CHARACTERISTICS
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.

GAIN vs FREQUENCY GAIN vs FREQUENCY

1kHz FILTER 10kHz FILTER
80 80

60 60
G = 1k G = 1k
40 40
Gain (dB)

Gain (dB)
G = 100 G = 100
20 20
G = 10 G = 10
0 0
G=1 G=1
−20 −20

−40 −40
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M
Frequency (Hz) Frequency (Hz)

COMMON- MODE REJECTION vs FREQUENCY COMMON- MODE REJECTION vs FREQUENCY

1kHz FILTER 10kHz FILTER
160 160
G = 1k
140 140
G = 100
120 120
G = 1k
CMR (dB)

CMR (dB)

100 100
G = 10
80 80
G=1 G = 100
60 60
G=1 G = 10
40 40

20 20
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M
Frequency (Hz) Frequency (Hz)

INPUT- REFERRED VOLTAGE NOISE AND

INPUT BIAS CURRENT NOISE vs FREQUENCY
POWER- SUPPLY REJECTION vs FREQUENCY 10kHz FILTER
120 10k 1
Input-Referred Voltage Noise (nV/√Hz)

G = 100, 1k

Input Bias Current Noise (pA/√Hz)

100 Current Noise
G = 10
(all gains)

80 G=1 1k 0.1
G=1
PSR (dB)

60

40 G = 10
100 0.01

Filter Frequency G = 100

20
10kHz
1kHz G = 1000
0 10 0.001
10 100 1k 10k 100k 1 10 100 1k 10k
Frequency (Hz) Frequency (Hz)

INA326, INA327 5
SBOS222D www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.

INPUT OFFSET VOLTAGE vs TURN- ON TIME INPUT OFFSET VOLTAGE vs WARM- UP TIME
1kHz FILTER, G = 100 10kHz FILTER, G = 100

Filter
Settling
Input Offset Voltage (20µV/div)

Input Offset Voltage (20µV/div)

Time Device
Turn- On Filter
Device Time Settling
Turn- On Time
Time
(75µs)

0 1 2 0 0.1 0.2 0.3 0.4

Turn- On Time (ms) Warm- Up Time (ms)

SMALL- SIGNAL RESPONSE SMALL- SIGNAL STEP RESPONSE

G = 1, 10, AND 100 G = 1000

1kHz Filter 1kHz Filter

50mV/div

50mV/div

10kHz Filter

500µs/div 500µs/div

LARGE- SIGNAL RESPONSE

G = 1 TO 1000 0.01Hz TO 10Hz VOLTAGE NOISE

1kHz Filter
200nV/div
2V/div

10kHz Filter

500µs/div 10s/div

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INA326, INA327
www.ti.com SBOS222D
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.

OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION OFFSET VOLTAGE PRODUCTION DISTRIBUTION

G=1 G=1

Population
Population

−10,000
−9000
−8000
−7000
−6000
−5000
−4000
−3000
−2000
−1000
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10,000
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Offset Voltage Drift (µV/°C)
Offset Voltage (µV)

OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION OFFSET VOLTAGE PRODUCTION DISTRIBUTION

G = 10 G = 10
Population

Population
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0

−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
Offset Voltage Drift (µV/°C)
Offset Voltage (µV)

OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION OFFSET VOLTAGE PRODUCTION DISTRIBUTION

G = 100, 1000 G = 100, 1000
Population
Population

−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
20
30
40
50
60
70
80
90
100
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40

Offset Voltage Drift (µV/°C) Offset Voltage (µV)

INA326, INA327 7
SBOS222D www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.

GAIN ERROR PRODUCTION DISTRIBUTION INPUT- REFERRED RIPPLE SPECTRUM

G = 100 G = 100
−100 100.000

−110 31.600

−120 1.000

VOUT (µVrms)
−130 0.316

VOUT (dBV)
Population

−140 0.100

−150 0.030

−160 0.010

−170 0.003

−180 0.001
−200
−180
−160
−140
−120
−100
−80
−60
−40
−20
0
20
40
60
80
100
120
140
160
180
200
0 200k 400k 600k 800k 1M
Frequency (Hz)
Gain Error (m%)

QUIESCENT CURRENT vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE

3.0 2.0
VS = +5V
1.5
2.5
1.0 IB−
2.0
0.5
VS = +2.7V
IQ (mA)

IB (nA)

1.5 0

−0.5
1.0
−1.0 IB+
0.5
−1.5

0 −2.0
−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

8
INA326, INA327
www.ti.com SBOS222D
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for operation of
the INA326. A 0.1µF capacitor, placed close to and across the
power-supply pins is strongly recommended for highest accu-
racy. RoCo is an output filter that minimizes auto-correction
circuitry noise. This output filter may also serve as an anti-
aliasing filter ahead of an Analog-to-Digital (A/D) converter. It
is also optional based on desired precision.
The output reference terminal is taken at the low side of R2
(IACOMMON).
The INA326 uses a unique internal topology to achieve excel-
lent Common-Mode Rejection (CMR). Unlike conventional
instrumentation amplifiers, CMR is not affected by resistance
in the reference connections or sockets. See “Inside the
INA326” for further detail. To achieve best high-frequency
CMR, minimize capacitance on pins 1 and 8.
SETTING THE GAIN
The INA326 is a 2-stage amplifier with each stage gain set
by R1 and R2, respectively (see Figure 5, “Inside the INA326”,
for details). Overall gain is described by the equation:
R2
G=2 (1)
R1
The stability and temperature drift of the external gain-setting
resistors will affect gain by an amount that can be directly
inferred from the gain equation (1).
Resistor values for commonly used gains are shown in
Figure 1. Gain-set resistor values for best performance are
different for +5V single-supply and for ±2.5V dual-supply
operation. Optimum value for R1 can be calculated by:
R1 = VIN, MAX/12.5µA (2)
where R1 must be no less than 2kΩ.

+2.5V −2.5V
DESIRED R1 R2 || C2
GAIN (Ω) (Ω || nF) 0.1µF

0.1 400k 20k || 5

2 7
0.2 400k 40k || 2.5 VIN−
0.5 400k 100k || 1 1 RO
4 VO 100Ω
1 200k 100k || 1
6
2 100k 100k || 1 R1 INA326 VO Filtered
8 CO(1)
5 40k 100k || 1
5 1µF G = 2(R2/R1)
10 20k 100k || 1 3
VIN+ fO = 1kHz
20 10k 100k || 1
50 4k 100k || 1
R2 C2(1)
100 2k 100k || 1
200 2k 200k || 0.5
500 2k 500k || 0.2 IACOMMON(2)
1000 2k 1M || 0.1
2000 2k 2M || 0.05 (1) C2 and CO combine to form a 2-pole response that is −3dB at 1kHz.
5000 2k 5M || 0.02 Each individual pole is at 1.5kHz.
10000 2k 10M || 0.01 (2) Output voltage is referenced to IACOMMON (see text).

Single-supply operation may require

V+ R2 > 100kΩ for full output swing.
DESIRED R1 R2 || C2
0.1µF
GAIN (Ω) (Ω || nF) This may produce higher input referred
offset voltage. See Offset Voltage,
0.1 400k 20k || 5 7 Drift, and Circuit Values for detail.
2
0.2 400k 40k || 2.5 VIN−
1 RO
0.5 400k 100k || 1 4 VO 100Ω
1 400k 200k || 0.5 6
R1 INA326 VO Filtered
2 200k 200k || 0.5 8 CO(1)
5 80k 200k || 0.5 5 1µF G = 2(R2/R1)
10 40k 200k || 0.5 3
VIN+ (3) fO = 1kHz
20 20k 200k || 0.5
50 8k 200k || 0.5 R2 C2(1)
100 4k 200k || 0.5
200 2k 200k || 0.5
IACOMMON(2)
500 2k 500k || 0.2
1000 2k 1M || 0.1
2000 2k 2M || 0.05 (1) C2 and CO combine to form a 2-pole response that is −3dB at 1kHz.
5000 2k 5M || 0.02 Each individual pole is at 1.5kHz.
10000 2k 10M || 0.01 (2) Output voltage is referenced to IACOMMON (see text).
(3) Output offset voltage required for measurement near zero (see Figure 28).

NOTES: (1) C2 and CO combine to form a 2-pole response that is –3dB at 1kHz. Each individual pole is at 1.5kHz. (2) Output voltage is referenced to
IACOMMON (see text). (3) Output offset voltage required for measurement near zero (see Figure 6).

FIGURE 1. Basic Connections. NOTE: Connections for INA327 differ—see Pin Configuration for detail.

INA326, INA327 9
SBOS222D www.ti.com
Following this design procedure for R1 produces the maximum
possible input stage gain for best accuracy and lowest noise.
Circuit layout and supply bypassing can affect performance.
Minimize the stray capacitance on pins 1 and 8. Use recom-
mended supply bypassing, including a capacitor directly from
pin 7 to pin 4 (V+ to V–), even with dual (split) power supplies
(see Figure 1).
OFFSET VOLTAGE, DRIFT, AND CIRCUIT VALUES
As with other multi-stage instrumentation amplifiers, input-
referred offset voltage depends on gain and circuit values. The
specified offset and drift performance is rated at R1 = 2kΩ,
R2 = 100kΩ, and VS = ±2.5V. Offset voltage and drift for other
circuit values can be estimated from the following equations:
VOS = 10µV + (50nA)(R2)/G (3)
dVOS/dT = 0.12µV/°C + (0.16nA/°C)(R2)/G (4)
These equations might imply that offset and drift can be
minimized by making the value of R2 much lower than the
values indicated in Figure 1. These values, however, have
been chosen to assure that the output current into R2 is kept
less than or equal to ±25µA, while maintaining R1’s value
greater than or equal to 2kΩ. Some applications with limited
output voltage swing or low power-supply voltage may allow
lower values for R2, thus providing lower input-referred offset
voltage and offset voltage drift.
Conversely, single-supply operation with R2 grounded re-
quires that R2 values be made larger to assure that current
remains under 25µA. This will increase the input-referred
offset voltage and offset voltage drift.
Circuit conditions that cause more than 25µA to flow in R2 will
not cause damage, but may produce more nonlinearity.
INA327 ENABLE FUNCTION
The INA327 adds an enable/shutdown function to the INA326.
Its pinout differs from the INA326—see the Pin Configuration
for detail.
The INA327 can be enabled by applying a logic HIGH
voltage level to the Enable pin. Conversely, a logic LOW
voltage level will disable the amplifier, reducing its supply
current from 2.4mA to typically 2µA. For battery-operated
applications, this feature may be used to greatly reduce the
average current and extend battery life. This pin should be
connected to a valid high or low voltage or driven, not left
open circuit. The Enable pin can be modeled as a CMOS
input gate as in Figure 2.
V+
2µA
Enable
6
FIGURE 2. Enable Pin Model.
10
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The enable time following shutdown is 75µs plus the settling
time due to filters (see Typical Characteristics, “Input Offset
Voltage vs Warm-up Time”). Disable time is 100µs. This
allows the INA327 to be operated as a “gated” amplifier, or
to have its output multiplexed onto a common output bus.
When disabled, the output assumes a high-impedance state.
INA327 PIN 5
Pin 5 of the INA327 should be connected to V+ to ensure
proper operation.
DYNAMIC PERFORMANCE
The typical characteristic “Gain vs Frequency” shows that the
INA326 has nearly constant bandwidth regardless of gain.
This results from the bandwidth limiting from the recom-
mended filters.
NOISE PERFORMANCE
Internal auto-correction circuitry eliminates virtually all 1/f
noise (noise that increases at low frequency) in gains of 100
or greater. Noise performance is affected by gain-setting
resistor values. Follow recommendations in the “Setting
Gain” section for best performance.
Total noise is a combination of input stage noise and output
stage noise. When referred to the input, the total mid-band
noise is:
800nV / Hz
VN = 33nV / Hz + (5)
G
The output noise has some 1/f components that affect
performance in gains less than 10. See typical characteristic
“Input-Referred Voltage Noise vs Frequency.”
High-frequency noise is created by internal auto-correction
circuitry and is highly dependent on the filter characteristics
chosen. This may be the dominant source of noise visible
when viewing the output on an oscilloscope. Low cutoff
frequency filters will provide lowest noise. Figure 3 shows the
typical noise performance as a function of cutoff frequency.
1k
Total Output Noise (µVRMS)
G = 1000
100
G = 100
10
G = 10
G=1
1
1 10 100 1k 10k
Required Filter Cutoff Frequency (Hz)
FIGURE 3. Total Output Noise vs Required Filter Cutoff
Frequency.
INA326, INA327
SBOS222D
Applications sensitive to the spectral characteristics of high-
frequency noise may require consideration of the spurious
frequencies generated by internal clocking circuitry. “Spurs”
occur at approximately 90kHz and its harmonics (see typical
characteristic “Input-Referred Ripple Spectrum”) which may
be reduced by additional filtering below 1kHz.
Insufficient filtering at pin 5 can cause nonlinearity with large
output voltage swings (very near the supply rails). Noise
must be sufficiently filtered at pin 5 so that noise peaks do not
“hit the rail” and change the average value of the signal.
Figure 3 shows guidelines for filter cutoff frequency.
HIGH-FREQUENCY NOISE
C2 and CO form filters to reduce internally generated auto-
correction circuitry noise. Filter frequencies can be chosen to
optimize the trade-off between noise and frequency re-
sponse of the application, as shown in Figure 3. The cutoff
frequencies of the filters are generally set to the same
frequency. Figure 3 shows the typical output noise for four
gains as a function of the –3dB cutoff frequency of each filter
response. Small signals may exhibit the addition of internally
generated auto-correction circuitry noise at the output. This
noise, combined with broadband noise, becomes most evi-
dent in higher gains with filters of wider bandwidth.
INPUT BIAS CURRENT RETURN PATH
The input impedance of the INA326 is extremely high—
approximately 1010Ω. However, a path must be provided for
the input bias current of both inputs. This input bias current is
approximately ±0.2nA. High input impedance means that this
input bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias current
for proper operation. Figure 4 shows provision for an input
bias current path in a thermocouple application. Without a
bias current path, the inputs will float to an undefined poten-
tial and the output voltage may not be valid.
INPUT COMMON-MODE RANGE
Common instrumentation amplifiers do not respond linearly with
common-mode signals near the power-supply rails, even if “rail-
to-rail” op amps are used. The INA326 uses a unique topology
to achieve true rail-to-rail input behavior (see Figure 5, “Inside
the INA326”). The linear input voltage range of each input
terminal extends to 20mV below the negative rail, and 100mV
above the positive rail.
INA326, INA327
SBOS222D www.ti.com
Thermocouple INA326
5
FIGURE 4. Providing Input Bias Current Return Path.
INPUT PROTECTION
The inputs of the INA326 are protected with internal diodes
connected to the power-supply rails. These diodes will clamp
the applied signal to prevent it from damaging the input
circuitry. If the input signal voltage can exceed the power
supplies by more than 0.5V, the input signal current should
be limited to less than 10mA to protect the internal clamp
diodes. This can generally be done with a series input
resistor. Some signal sources are inherently current-limited
and do not require limiting resistors.
FILTERING
Filtering can be adjusted through selection of R2C2 and
ROCO for the desired trade-off of noise and bandwidth.
Adjustment of these components will result in more or less
ripple due to auto-correction circuitry noise and will also
affect broadband noise. Filtering limits slew rate, settling
time, and output overload recovery time.
It is generally desirable to keep the resistance of RO relatively
low to avoid DC gain error created by the subsequent stage
loading. This may result in relatively high values for CO to
produce the desired filter response. The impedance of ROCO
can be scaled higher to produce smaller capacitor values if
the load impedance is very high.
Certain capacitor types greater than 0.1µF may have dielec-
tric absorption effects that can significantly increase settling
time in high-accuracy applications (settling to 0.01%). Polypro-
pylene, polystyrene, and polycarbonate types are generally
good. Certain “high-K” ceramic types may produce slow
settling “tails.” Settling time to 0.1% is not generally affected
by high-K ceramic capacitors. Electrolytic types are not
recommended for C2 and CO.
11
 INSIDE THE INA326
The INA326 uses a new, unique internal circuit topology
that provides true rail-to-rail input. Unlike other instrumen-
tation amplifiers, it can linearly process inputs up to 20mV
below the negative power-supply rail, and 100mV above
the positive power-supply rail. Conventional instrumenta-
tion amplifier circuits cannot deliver such performance,
even if rail-to-rail op amps are used.
The ability to reject common-mode signals is derived in
most instrumentation amplifiers through a combination of
amplifier CMR and accurately matched resistor ratios.
The INA326 converts the input voltage to a current.
Current-mode signal processing provides rejection of com-
mon-mode input voltage and power-supply variation with-
out accurately matched resistors.
A simplified diagram shows the basic circuit function. The
differential input voltage, (VIN+) – (VIN–) is applied across
R1. The signal-generated current through R1 comes from
V+
A1 and A2’s output stages. A2 combines the current in R1
with a mirrored replica of the current from A1. The result-
ing current in A2’s output and associated current mirror is
two times the current in R1. This current flows in (or out)
of pin 5 into R2. The resulting gain equation is:
R2
G=2
R1
Amplifiers A1, A2, and their associated mirrors are pow-
ered from internal charge-pumps that provide voltage
supplies that are beyond the positive and negative supply
rails. As a result, the voltage developed on R2 can actually
swing 20mV below the negative power-supply rail, and
100mV above the positive supply rail. A3 provides a
buffered output of the voltage on R2. A3’s input stage is
also operated from the charge-pumped power supplies for
true rail-to-rail operation.
V−
0.1µF

7 4

Current Mirror
INA326
2 IR1 IR1
VIN−
A1
1

Current Mirror

IR1 R1
IR1 Current Mirror

8 2IR1 2IR1

VIN+ A2 VO
3 6
A3
2IR1 2IR1

2IR1
Current Mirror

R2 C2

IACOMMON

FIGURE 5. Simplified Circuit Diagram.

12
INA326, INA327
www.ti.com SBOS222D
APPLICATION CIRCUITS
2

1 R0
6 VO
R1 INA326
8 5
VREF C0
3
R′2

R2 and R′2 are chosen to R2 C2

create a small output offset
voltage (e.g., 100mV).
Gain is determined by
the parallel combination G = 2 (R2 || R′2)/R1
of R2 and R′2.

FIGURE 6. Generating Output Offset Voltage.

VREF

2
RO
1 100Ω A/D
6
2kΩ INA326 Converter
8 5 CO
1µF
3
200kΩ

G = 2(200kΩ || 200kΩ)/2kΩ = 100 200kΩ C2

FIGURE 7. Output Referenced to VREF/2.

+5V RS must be chosen

so that the input voltage
does not exceed 100mV
RS beyond the rail.

IL 2 7 RO
2kΩ 1 100Ω RL
R1 6
INA326 VO
8 5 CO
3 1µF
NOTE: Connection point
R2 C2
of V+ will include ( ) or
exclude ( ) quiescent
current in the measurement
R2
as desired. Output offset VO = 2(IL × RS)
required for measurements R1
near zero (see Figure 6).

FIGURE 8. High-Side Current Shunt Measurement.

INA326, INA327 13
SBOS222D www.ti.com
 +5V
2 RO R2
1 7 100Ω VO VO = 2(IL × RS)
R1 6 R1
INA326
8 5
CO
3 1µF RL
R2 C2
2kΩ

IL RS must be chosen so that

the input voltage does not
RS
exceed 20mV beyond the rail.

NOTE: Connection point of V− will include ( ) or

exclude ( ) quiescent current in the measurement
as desired. Output offset required for measurements
near zero (see Figure 6).

FIGURE 9. Low-Side Current Shunt Measurement.

1nF

RF = 100kΩ

NOTE: 0.2% accuracy. Current shunt +5V

monitor circuit can be designed for −250V supply
with appropriate selection of high- voltage FET. 2 7
6 RF
OPA336PA VO = 2(IL × RS)
3 RI
4
RSTART RPULL- DOWN
100kΩ 200kΩ

ZVN4525G
(zetex) 8.45kΩ
RL
(High- Voltage
n- Channel
IL 2
7 FET)
+ 1 VCC
6 ZMM5231BDICT
VS = 0mV RS RI = 2kΩ INA326 0.1µF
5.1V
to 50mV max 8 GND 5
4
− 3

−48V

FIGURE 10. Low-Side –48V Current Shunt Monitor.

+48V
+
3 7
VSHUNT = 0mV VCC
RI 8 6 ZMM5231BDICT
to 50mV RSHUNT INA326 0.1µF
2kΩ 5.1V
1 GND 5
− ZVP4525
2 4 (zetex)

Load (High- Voltage

p- Channel FET) 8.45kΩ
+5V
3 7
6
OPA336PA VO = 0.1V to 4.9V
2
75kΩ 1nF 4

49.9kΩ

165kΩ

FIGURE 11. High-Side +48V Current Shunt Monitor.

14
INA326, INA327
www.ti.com SBOS222D
 2
+
1 VO = VIN (100) + VDAC
VIN 2kΩ 6
INA326
8 5
−
3 +5V
1nF 100kΩ
2 7 +15V
DAC 1
VDAC = 0.075V
R1 6
VD INA326 NC(1)
to 4.925V
5 2 7
8
6
4 OPA277 VO
FIGURE 12. Output Offset Adjustment. 3 3
VCM (2) 4

+1.8V to +5V −15V

R2 C2

Logic +5V

2 9 NOTES: (1) NC denotes No Connection.

6 Enable (2) Typical swing capability −20mV to (+5V + 100mV).
1
8
R1 INA327
10 7

3 4
1nF R2(1)
FIGURE 14. Output from Pin 5 to Allow Swing Beyond the Rail.
+5V

2 9
6 Enable
1
8
R3 INA327 VO
10 7
4 0V < VDAC < +5V +5V
3
R4 (1)
1nF
((+VREF) − (VDAC))
DAC
2 7 IOUT = ± 50nA
R1
1
R1 6
INA326
200kΩ
8 5
+5V
4
3
VREF = +2.5V RF = 10k
CF
2 9
6 Enable
1
8
R5 INA327 NOTE: Output resistance is typically 800MΩ.
10 7 Resolution < 5nA. Recommended values of CF = 1nF to 1µF.
3 4
1nF R6(1)

NOTE: (1) R2, R4, and R6 could be a

single, shared resistor to save board space.

FIGURE 13. Multiplexed Output. FIGURE 15. Programmable ±25µA Current Source with High
Output Resistance.

INA326, INA327 15
SBOS222D www.ti.com
 VREF = +2.5V
+2.5V

2 7
DAC
1
6
RI = 200kΩ INA326
8 5
4
3 49.9Ω
10kΩ
−2.5V

IO
VREF − VDAC 10kΩ
IOUT = 2 1+ RL
200kΩ 49.9Ω 0.1µF

IO = ±5mA with
0.1µA stability.

FIGURE 16. Programmable ±5mA Current Source.

RI = 1kΩ RF = 100kΩ
VI
+30V
20kΩ
2 7
6 VO = –27V
OPA551
+5V 3
4 VOS = –100µV at 200mA
IB
2 7 −30V RF
1 20kΩ G=− = −100V/V
6 RI
2kΩ INA326
8 5 Offset of the high- voltage op amp
4 is controlled by the INA326.
3

Internal charge pump in the INA326 allows

1MΩ this node to swing 20mV below ground
10nF
without a negative supply.

NOTES: (1) The OPA551 is a 60V op amp. (2) The INA326 does not require a
negative supply to correct for negative VOS values from the high-voltage op amp.
(3) Voltage offset contribution of IB (OPA551) is 100pA • 2kΩ = 0.2µV.

FIGURE 17. ±27V Output at 200mA Amplifier with 100µV Offset.

16
INA326, INA327
www.ti.com SBOS222D
 +5V Input VS

Common + C4
Error Amplifier 10 F

SBOS222D
R13 R10
20Ω 1kΩ

INA326, INA327
VS Integrator
8 TC: 1s to 10s
+ C6 REF1004- 2.5
10µF D1 RINT CINT
R12 4
15kΩ R17 10MΩ 1µF
5kΩ
R15 R18
POT
200Ω 10kΩ
VBIAS C3
VS
1nF
R16
V+ V− Loop Gain
2kΩ VS
0.1µF Adjust
POT

V+ R23
IN+ 3 7 10kΩ
1/4
RTHERM 8 R14 1/4 OPA4340
R11 10k‰ 4
R9
VO 10kΩ OPA4340
14.3kΩ 6 V−
2kΩ INA326
1 Summing Amplifier

FIGURE 18. Single-Supply PID Temperature Control Loop.

C7
R7 Set Temp 5
IN− 22nF VBIAS
1kΩ 2 C8
POT Proportional 0.1µF
R8 C5 R1

www.ti.com
100kΩ 1nF 100kΩ
R6 R25
9.53kΩ Gain = 100V/V R19 10kΩ
100kΩ R21
VBIAS 10kΩ
1/4
OPA4340 1/2 Output to
VBIAS OPA2340 TEC
VS Driver

Common
Differentiator
TC: 100ms to 1s VBIAS
C1
R5 1nF RDIFF
Bias Generator 20kΩ 1MΩ
CDIFF R2
V+ 1µF 100kΩ
R20 R22
1/2 5k‰
VBIAS 1/4 10kΩ
OPA2340
POT OPA4340
V−

C2 R4
470nF 20kΩ VBIAS

17
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

INA326EA/250 ACTIVE VSSOP DGK 8 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B26
& no Sb/Br)
INA326EA/250G4 ACTIVE VSSOP DGK 8 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B26
& no Sb/Br)
INA326EA/2K5 ACTIVE VSSOP DGK 8 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B26
& no Sb/Br)
INA326EA/2K5G4 ACTIVE VSSOP DGK 8 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B26
& no Sb/Br)
INA327EA/250 ACTIVE VSSOP DGS 10 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B27
& no Sb/Br)
INA327EA/250G4 ACTIVE VSSOP DGS 10 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B27
& no Sb/Br)
INA327EA/2K5 ACTIVE VSSOP DGS 10 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -40 to 85 B27
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Jan-2013

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA326EA/250 VSSOP DGK 8 250 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA326EA/2K5 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA327EA/250 VSSOP DGS 10 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA327EA/2K5 VSSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Jan-2013

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA326EA/250 VSSOP DGK 8 250 366.0 364.0 50.0
INA326EA/2K5 VSSOP DGK 8 2500 366.0 364.0 50.0
INA327EA/250 VSSOP DGS 10 250 210.0 185.0 35.0
INA327EA/2K5 VSSOP DGS 10 2500 367.0 367.0 35.0

Pack Materials-Page 2
 PACKAGE OUTLINE
DGS0010A SCALE 3.200
VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE

C
5.05
TYP SEATING PLANE
4.75

A PIN 1 ID 0.1 C
AREA

8X 0.5
10
1

3.1
2.9 2X
NOTE 3 2

5
6
0.27
10X
0.17
3.1 0.1 C A B 1.1 MAX
B
2.9
NOTE 4

0.23
TYP
SEE DETAIL A 0.13

0.25
GAGE PLANE

0.7 0.15
0 -8 0.05
0.4

DETAIL A
TYPICAL

4221984/A 05/2015

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187, variation BA.

www.ti.com
 EXAMPLE BOARD LAYOUT
DGS0010A VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE

10X (1.45)
10X (0.3) SYMM (R0.05)
1 TYP
10

SYMM

8X (0.5) 5 6

(4.4)

LAND PATTERN EXAMPLE

SCALE:10X

SOLDER MASK METAL UNDER SOLDER MASK

METAL OPENING
OPENING SOLDER MASK

0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4221984/A 05/2015
NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DGS0010A VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE

10X (1.45)
SYMM (R0.05) TYP
10X (0.3)
1
10

SYMM
8X (0.5)

5 6

(4.4)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:10X

4221984/A 05/2015
NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
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