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Matching
Bernhard E. Boser
University of California, Berkeley
boser@eecs.berkeley.edu
• Random variations
Random Variations
Bernhard E. Boser
University of California, Berkeley
boser@eecs.berkeley.edu
Ref: M. Pelgrom, “Matching properties of MOS transistors,” IEEE JSSC, 10/1989, pp. 1433-9.
Parameter Value
Avt (MOS) 5 mV-µm
Aβ (MOS) 1 %-µm
AΔIs/Is (BJT) 2 %-µm
AΔβ/β (BJT) 4 %-µm
AΔC/C (MIM capacitor) 1 %-µm
AΔR/R (Poly resistor) 3 %-µm
Yield
Bernhard E. Boser
University of California, Berkeley
boser@eecs.berkeley.edu
https://en.wikipedia.org/wiki/Standard_deviation
Bernhard E. Boser
University of California, Berkeley
boser@eecs.berkeley.edu
Example:
𝑊 = 10µm, 𝐿 = 180nm, 𝑉 ∗ = 200mV, 𝐴345 = 5mV 7 µm, 𝐴8 = 1% 7 µm