Preliminary Technical Information

GenX3TM 1200V IGBT IXGH40N120C3 VCES = 1200V

IC110 = 40A
VCE(sat) ≤ 4.4V
High speed PT IGBTs tfi(typ) = 57ns
for 20 - 50 kHz switching

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 1200 V
TO-247 (IXGH)
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V

IC25 TC = 25°C (limited by leads) 75 A

G TAB
IC110 TC = 110°C 40 A C
E
ICM TC = 25°C, 1ms 200 A
IA TC = 25°C 30 A
EAS TC = 25°C 500 mJ G = Gate C = Collector
SSOA VGE = 15V, TJ = 125°C, RG = 3Ω ICM = 80 A E = Emitter TAB = Collector
(RBSOA) Clamped inductive load @VCE≤ 1200V
PC TC = 25°C 380 W
TJ -55 ... +150 °C Features
TJM 150 °C z
International standard packages:
Tstg -55 ... +150 °C JEDEC TO-247AD
z
Md Mounting torque 1.13 / 10 Nm/lb.in. IGBT and anti-parallel FRED in one
package
TL Maximum lead temperature for soldering 300 °C z
MOS Gate turn-on
TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C - drive simplicity
Weight 6 g
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
Symbol Test Conditions Characteristic Values z
Switch-mode and resonant-mode
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. power supplies
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 75 μA
VGE = 0V TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 30A, VGE = 15V, Note 1 4.4 V
TJ = 125°C 2.7 V

© 2008 IXYS CORPORATION, All rights reserved DS99997(06/08)

 IXGH40N120C3
Symbol Test Conditions Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC = 30A, VCE = 10V, Note 1 18 30 S
Cies 2930 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 225 pF ∅P
1 2 3
Cres 93 pF
Qg 142 nC
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 19 nC
Qgc 62 nC
td(on) 17 ns e

tri 33 ns Terminals: 1 - Gate 2 - Drain

Inductive load, TJ = 25°°C
Eon 1.8 mJ 3 - Source Tab - Drain
IC = 30A, VGE = 15V Dim. Millimeter Inches
td(off) 130 ns Min. Max. Min. Max.
VCE = 600V, RG = 3Ω
tfi 57 ns A 4.7 5.3 .185 .209
Note 1 A1 2.2 2.54 .087 .102
Eoff 0.55 1.0 mJ A2 2.2 2.6 .059 .098
td(on) 17 ns b 1.0 1.4 .040 .055
Inductive load, TJ = 125°°C b1 1.65 2.13 .065 .084
tri 35 ns b2 2.87 3.12 .113 .123
Eon IC = 30A, VGE = 15V 3.5 mJ C .4 .8 .016 .031
D 20.80 21.46 .819 .845
td(off) VCE = 600V, RG = 3Ω 177 ns E 15.75 16.26 .610 .640
tfi Note 1 298 ns e 5.20 5.72 0.205 0.225
Eoff 1.6 mJ L 19.81 20.32 .780 .800
L1 4.50 .177
RthJC 0.33 °C/W ∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
RthCK 0.21 °C/W
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGH40N120C3

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25ºC @ 25ºC
80 250
VGE = 15V VGE = 15V
13V 225 13V
70
11V
200
60
9V 175
11V
IC - Amperes

50

IC - Amperes
150

40 125
9V
7V
100
30
75
20
7V
50
10
25
5V
5V
0 0
0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 24 27 30
VCE - Volts VCE - Volts

Fig. 3. Output Characteristics Fig. 4. Dependence of VCE(sat) on

@ 125ºC Junction Temperature
80 1.3
VGE = 15V
VGE = 15V
70 13V 1.2
11V I = 80A
C
1.1
60 9V
VCE(sat) - Normalized

1.0
IC - Amperes

50
0.9
40 7V
I C = 40A
0.8
30
0.7

20
0.6

10 5V I C = 20A
0.5

0 0.4
0 1 2 3 4 5 6 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
8.0 100

7.5 TJ = 25ºC 90

80
7.0
70
6.5
IC - Amperes
VCE - Volts

60
6.0 I C = 80A
50
5.5 TJ = 125ºC
40
25ºC
5.0 - 40ºC
40A 30
4.5
20

4.0 10
20A
3.5 0
5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE - Volts VGE - Volts

© 2008 IXYS CORPORATION, All rights reserved

 IXGH40N120C3

Fig. 7. Transconductance Fig. 8. Gate Charge

45 16
TJ = - 40ºC
40 VCE = 600V
14
I C = 40A
35 I G = 10mA
12
25ºC
30
g f s - Siemens

10

VGE - Volts
25 125ºC
8
20
6
15

4
10

5 2

0 0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160
IC - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 90
f = 1 MHz
80

70
Capacitance - PicoFarads

Cies

1,000 60
IC - Amperes

50
Coes
40

100 30

20 TJ = 125ºC
Cres
RG = 3Ω
10 dV / dt < 10V / ns

10 0
0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200
VCE - Volts VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

1.00
Z(th)JC - ºC / W

0.10

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_40N120C3(6N)6-03-08

 IXGH40N120C3

Fig. 12. Inductive Switching Fig. 13. Inductive Switching

Energy Loss vs. Gate Resistance Energy Loss vs. Collector Current
6 9 4.0 8

Eoff Eon - --- Eoff Eon ----

3.5 7
5 TJ = 125ºC , VGE = 15V 8 RG = 3Ω , VGE = 15V
VCE = 600V 3.0 VCE = 600V 6
I C = 60A
Eoff - MilliJoules

4 7

Eoff - MilliJoules

E
E
2.5 5

on
on

- MilliJoules
- MilliJoules
3 6 2.0 TJ = 125ºC 4

1.5 3
2 5

I C = 30A 1.0 2

1 4
0.5 1
TJ = 25ºC

0 3 0.0 0
2 6 10 14 18 22 26 30 15 20 25 30 35 40 45 50 55 60

RG - Ohms IC - Amperes

Fig. 14. Inductive Switching Fig. 15. Inductive Turn-off

Energy Loss vs. Junction Temperature Switching Times vs. Gate Resistance
3.5 8 450 900

Eoff Eon ---- 400 tf td(off) - - - - 800

3.0 7 TJ = 125ºC, VGE = 15V
RG = 3Ω , VGE = 15V
350 VCE = 600V 700
VCE = 600V

t d(off) - Nanoseconds
2.5 6
t f - Nanoseconds

300 600
Eoff - MilliJoules

Eon - MilliJoules

I C = 30A
2.0 5 250 500
I C = 60A

200 400
1.5 4

150 300
I C = 60A
1.0 3
100 200

0.5 2
50 100
I C = 30A

0.0 1 0 0
25 35 45 55 65 75 85 95 105 115 125 4 6 8 10 12 14 16 18 20 22 24 26 28 30
TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Fig. 17. Inductive Turn-off

Switching Times vs. Collector Current Switching Times vs. Junction Temperature
500 210 350 190

450 200
tf td(off) - - - - 300 tf td(off) - - - - 180
400 RG = 3Ω , VGE = 15V 190 RG = 3Ω , VGE = 15V
VCE = 600V VCE = 600V I C = 30A
t d(off) - Nanoseconds

250 170
t d(off) - Nanoseconds

350 180
t f - Nanoseconds

t f - Nanoseconds

300 170
200 160
TJ = 125ºC
250 160
150 150
200 150 I C = 60A

150 140 100 140

TJ = 25ºC
100 130
50 130
50 120

0 110 0 120
15 20 25 30 35 40 45 50 55 60 25 35 45 55 65 75 85 95 105 115 125
IC - Amperes TJ - Degrees Centigrade

© 2008 IXYS CORPORATION, All rights reserved

 IXGH40N120C3

Fig. 18. Inductive Turn-on Fig. 19. Inductive Turn-on

Switching Times vs. Gate Resistance Switching Times vs. Collector Current
180 60 90 23

160
tr td(on) - - - - 55 80 tr td(on) - - - - 22
TJ = 125ºC, VGE = 15V RG = 3Ω , VGE = 15V
140 VCE = 600V 50 70 VCE = 600V 21

t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds

t r - Nanoseconds
120 45 60 20
I C = 60A
100 40 50 19
TJ = 125ºC, 25ºC
80 35 40 18
I C = 30A
60 30 30 17

40 25 20 16

20 20 10 15

0 15 0 14
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55 60
RG - Ohms IC - Amperes

Fig. 20. Inductive Turn-on

Switching Times vs. Junction Temperature
90 22

80 21
I C = 60A
t d(on) - Nanoseconds

70 20
t r - Nanoseconds

tr td(on) - - - -
60 RG = 3Ω , VGE = 15V 19

VCE = 600V
50 18

I C = 30A
40 17

30 16

20 15
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_40N120C3(6N)6-03-08

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