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Development Overview
Conclusions
Substrate
GAP!
Bump BEOL
Highest Cost
WLCSP
Wafer Level 10um
Adv Subst Process
(Bump Line RDL) (dual substrate)
5um
SWIFT™
(Single die / Multi die) Thin Film on Subst
SLIMTM SWIFTTM
Silicon-Less Integrated Module Silicon Wafer Integrated Fan-out Technology
d UF Sold
er
er ball
b
3
al r
d
2
l Passivation3 n
d R
Passivation2
D
R L
D
RDL
Passivation1
L 1st RDL
PBO
Sold Solder
er ball
ball
BGA BGA
SLIM Size
e.g. 11mm
15mm 15mm
Single die
WLCSP RDL > 10um L/S
RF, WLAN, Power etc.
HBM integration
2.1D RDL 2~10um L/S by substrate
Fab. BEOL process Self alignment by solder joint Different package form possible
RDL fabrication first High UPH chip placement Die thickness / Mold interface
Chip attach and mold last No die shift / rotation issue etc.
Flip chip attach
Amkor Confidential I Sep-15 13
Simplified Process Flow
Passivation3 3rd
Cycle time
1. RDL wafer Passivation2
Passivation1
2nd RDL
RDL
1st RDL 2. RDL
PBO
Sold
er
3. BGA or C4 + Substrate ball
3. BGA
Cycle time
2. Validation
3. Intern Qual
4. Corner Eval
5. Cust. Qual
6. Production