t'hin., o.

ELSEVIER Thin Solid Films 306 (I997) 67-73

Optical study of undoped, B or P-doped polysilicon

Y. Laghla '~, E. Scheid
Ix&oratoire d'AnaIyse et d'Architecture des Syst~mes 7, Ac,. ColonelRoche, 31077 Toulouse cedex, France
Received 2 January 1997; accepted 23 April 1997

Abstract

The refractive index n(3.), and optical absorption coefficient oe(3,), of thin polycrystalline silicon films (Si-poly), undoped or heavily
doped in-situ with boron 8.10 ~-° cm -3 or phosphorus 6.10 ~-° cm -3, deposited inside a new kind of reactor, called sector reactor (a
reduced model of an annular reactor). The optical constants of undoped Si-poly are obtained by a simple procedure which is based on the
use of the fringe pattern in the transmission spectrum. For heavily B- or P-doped polysilicon films, the optical absorption coefficient
become not negligible at near infrared and we deduced the optical constants from both the measured transmission T(3.) and reflection
R(3.) for film-sub~trate structures. In the infrared, the index of refraction decreases systematically and the absorption coefficient increases
systematically with wavelength. This variation of the optical parameters is attributed to the presence of free carriers. Drude's theory was
used in order to calculate the free-carrier concentration and the mobilities, and these results compared well with those obtained by
Hall-effect measurements. © 1997 Elsevier Science S.A.

Keywords: Chemical vapour; Deposition (CVD); Electrical properties and measurements; Optical properties

1. Introduction 2. Experimental p r o c e d u r e

Heavily-doped polycrystalline silicon plays a crucial

role in advanced integrated-circuit technology. It is used as
a gate material on most metal-oxide semiconductor (MOS)
[1] devices or as interconnecting material [2], and in bipo-
lar technology as an active emitter material. Furthermore,
some potential applications to p - n junction [3] and solar
cells [4] have been tried. In that case, intensive work has
been devoted to optical and electrical properties [5-7] and
to the optimisation of the process parameters for a given
application.
In this paper, we present the optical values such as
refractive index n(A), optical absorption coefficient oe(A)
and film thickness of both undoped, and in-situ B- or
P-doped polysilicon. These optical constants were obtained
from transmission and reflection measurements [8-14] in
the range 4 0 0 - 2 0 0 0 nm. Using Drude's theory, we deter-
mined the carrier concentration and we deduced the mobil-
ities from resistivity measurements. These results were
compared with those obtained by Hall-effect measure-
ments.
2.1, Preparation o f LPCVD polysilicon layers
' T h e principle of the reactor [15] used in this work is
shown in Fig. 1. This kind of reactor allows the treatment
of large areas (up to 150 m : ) with better uniformity of
thickness, because the substrates are stacked parallel to the
gas flow. It can be easily studied on a reduced model, Fig.
2, consisting of a small pilot plan where two substrates
only are treated.
Thin polysilicon layers, deposited by pyrolizing silane
(Sill 4) on polished quartz substrates at 660°C in a low-
pressure reactor ( P = 0.3 Torr), can be doped in situ by
the addition of dopant gases (PH 3 5% in N2, BC13 3% in
N 2) for P- or B-doped polysilicon respectively. A surface-
profiling stylus was used to check the film thickness (the
difference between the optically determined and the me-
chanically determined thickness was found to be less than
5%).
2.2. Reflectance and transmittance measurement

* Corresponding author. Tel.: + 33(0)-5-61-33-64-18; fax: +33(0)-5- The optical transmission and reflection spectra at nor-
61-33-62-08; e-mail: laghla@laas.fr/scheid@laas.fr. mal incidence were obtained by a double beam spectro-

0040-6090/97/$17.00 © I997 Elsevier Science S.A. All rights reserved.

PII S0040-6090(97)00247-2
68 E Lzlghla,E. Scheid/ Thin Solid Fibns306 (1997) 67-73

gas inIet 1,

alimentatien tubes
1 1, 0.91 , --
- - --~-B"d°pad
P-doned
/! ~ ~"~*.~on material 0.8 A '; " undoped
i
l /
0.7 l

't- ~ ' ¢
quartz tube
outer furnace

wafers quartz circular 0,3 'rp , L

support
0,2-

inner furnace o,1

i
0;' ''ff ~ ~ , -- . r |
4oo 6oo 8oo 1~oo 12oo uoo ~6oo laoo 2ooo
wavelength(nm)
F i g . 3. T r a n s m i t t a n c e and r e f l e c t a n c e for u n d o p e d , P - o r B - d o p e d polysil-
icon for f i l m t h i c k n e s s e s o f 5 6 2 n m , 5 7 4 n m a n d 6 0 i n m , r e s p e c t i v e l y .

with the extrema shifted toward the infrared due to the

gas outlet optical absorption in this region.
Fig. 1. Schematic of an annular reactor.

3. Results and discussion

photometer (Perkin Etmer, Lambda I9), and the wave-
length range analyzed was from 390 up to 2000 nm.
The transmittance and reflection spectra for undoped
and heavily doped B- or P-polysilicon are shown in Fig. 3.
The spectra of doped silicon are similar to the undoped
gas
3.1. RefractiL,e index and optical absorption for undoped
poIysilicon
3.1.1. Calculating procedure and results
We consider our system tbrmed by polysilicon layer,
deposited on a thick transparent substrate with refractive
index n~ as homogeneous, uniform, linear and isotropic.
inlet For wavelengths where the interference phenomena be-

1 come visible, the refractive index in a first approximation

n 1 is obtained from the maxima and the minima of optical
transmission [8] TM and Tm, by the following equations:
-~ x 1 / 2 ] l / 2
nl= NI+(N,2+n~) ] (1)

where
glow screen
waters r -rm

-i
N~ = 2 n ~ - - - + - - (2)
TMTm 2
A first approximation d t of the film thickness is ob-
Insulation tained from the expression:
materiel
A1 A2
d1 = (3)
2(n,2 h i - nizam)
Heating
elements where n~l, nt2 are the refractive index to the two maxima
or minima adjacent at h t and h 2 respectively. The final
film thickness d, refractive index n I, order number m are
determined by fitting the following equation at a given
wavelength A:

Fig. 2, S c h e m a t i c o f a s e c t o r r e a c t o r . 2ntd = mh (4)

 Y. lxighla. E. Scheid / Thb2 Solid Films 306 (1997) 6 7 - 7 3 69

transmittance for undoped polysilicorl

In the same region, of interference phenomena a first 1
approximation ch of the coefficient of absorption is given
0.9
by:
0.8

X = (5)
('h- 1)3(nt-n~)
where t- 0.5 /

0,4
8 ;Z2/l s
EM 4- (,l~ - 1)(n~ - n [ ) (6) 0,3
TM
0,2 "~
and:
0,1
x = exp( - % d ) (7)
i i i , ,
400 600 800 1000 1200 1400 1600 i800 2000
In the region where the interference fringe disappears, wavelength.(nm)
the values of n~ can be estimated by extrapolating the
Fig. 4. Calculated and experimental transmission spectra for undoped
values calculated in the medium and weak absorption. The polysilicon with thickness 562 nm.
value of oq can be calculated using the equation:
6 1
c - - '" 1

x= (n t - l)3(nt -n~) (8) i

5.5 Si-poty 40mn

o Si-poly 30mn
where + Si-poly 15mn
+
5 ~+~ x Si-poly ref[16]
S tll2tZs 2TMT m
a = :T,, = - - (9)
=
- - Si-mone ref[19]
T/ rb, I q- r m %
4,5
In the region where the transmission T_< 0.2 and for
x << l, the transmittance is given by:
BT Xo%. x
x(A) = - - (10)
A 3,5 ........... ~ .... x-.-

where A = 1 6 . [ , 4 B = ( < + l)30h + .[). o o o

4 0r0 6 0' 0 '

800 1000 12100 1400 1600 1800 2000
The optical constants calculated were used for the cal- wavelength
culation of the transmittance. The final values of optical Fig. 5. Refractb, e index of undoped polysilicon. 15 min, 30 rain and 40
absorption coefficient o~(A) and refractive index n(3.) rain correspond to different times of deposition, giving thicknesses of 255
were then obtained by minimizing the difference between nm, 562 nm and 684 nm, respectively,
the calculated spectra and the experimental ones by iterat-
ing starting from ~t and n~. The calculated transmittance
agreed quite accurately with the experimental measure- 100i L i x:spoy;10,
L "" : t'--~ Sr-mono[19]
ments as illustrated in Fig. 4.
105p{t(" x ; + Si~pely ";5ran
t\.~× ' t0 S~-potY 30ran

3.1.2. Discussion
The refractive index decreases with the wavelength
when increasing the film thickness (Fig. 5) and the optical
absorption coefficient o¢(.a.) shows a variation in the do- ~'°1( " ' [ ~ c" ' " o: " :~ " :4 • " .
main of near infrared (Fig. 6) that can be explained by the
X ¢' + o
effect of the microstructural variation a n d / o r by the effect 102 " ;" "" ~ : "'" "" " o i. ; ",' '
of a surface roughness. Moreover, the thin layers of poly-
crystalline silicon deposited by LPCVD are known to 10~ .... , : , .. ,. . . . . . . . ~ ,
show a significant surface roughness and a variety of
structural modifications [16-19] which can have a signifi- 100 I I I , i4f00
400 600 800 1000 1200 1600 1800 2000
cant effect on their optical properties. A theoretical work wavelength (rim)
of [20], has shown that surface roughness and grain bound- Fig, 6. Optical coefficient of absorption of undoped polysilicon. 15 min,
aries have a meaningful effect on optical absorption coeffi- 30 min and 40 rain correspond to different times of deposition, giving
cient which quite agrees with our experimental results. In thicknesses of 2Z55 nm, 562 nm and 684 rim, respectively.
70 Y. Laghla, E. Scheid/Thin Solid Films 306 (1997) 67-73

0.1
other respects, this surface roughness can have a beneficial k

effect in the case of photovoltaic application, which plays 0'09 t

s
p
k=f(n) eq.(12}
I - " k=f(n)eq.(11)
r
i I
the role of light trapping. I
0,081- t
In Fig. 7, the surface roughness assessed by AFM I 1
0,07
observation of layers with increasing thickness is given i
I
P 1
and the roughness calculated from this observation is (rms 0.06 t
[
roughness = 55 and 71 A) for Si-poly with thickness 255 t
•~ 0.05 r
and 562 nm respectively. This value increases effectively t
L
with thickness. 0,04 I
l
l'
&03
3.2. Optical constants of heauily B- or P-doped polysilicon 0.02 /

3.2.1. Calculating procedure and results 0.01

For heavily B- or P-doped polysilicon, the complex 1 + , - r ,

0,5 1 1,5 2 2,5 3

refractive index can not be obtained by the above men-
tioned procedure because, in the infrared region (see Fig.
3), the absorption coefficient becomes not negligible. The
optical constants are obtained by using the measurement of
transmittance and reflectance [9-12] at normal incidence.
The method consists in solving the system of equations for
all wavelengths A:
re(n, k, d, )t, n~) -T~p(h) =0
n (n, d, Z, - =0
where T~h and Rth are the theoretical values given by the
classical law of optics (see Appendix A). This system of
equations gives fixed values for (n~, d and h), two curves
in the (n, k) plane as can be seen in Fig. 8, which was
calculated using R~xp and T~×p measured at A = 1097 nm
and for a thickness d = 574 nm from P-doped polysilicon
spectra. The two couples of solution of Eqs. (11) and (12)
are (0.4265, 0.0227) and (3.3528, 0.0209) and we selected
the correct solution which had a significant physical value
in our case, (n, k) = (3.3528, 0.0209). The results for the
optical constants for doped and undoped polysilicon are
plotted versus wavelength in Figs. 9 and 10.
I3
Fig. 8. Curves extracted from Eqs. ( l l ) and (12), computed at 3.= i097
nm and for thickness d = 574 rim, for P-doped polysilieon.
In Fig. 1 i, we show that the calculated and experimen-
tal transmission and reflection spectra for P-doped potysili-
con agree very well.
(11)
(12)
3.2.2. Discussion
In Figs. 9 and l0 we remarked on the dependence of the
optical constant with the doping and wavelength. The
refractive index for B- or P-doped polysilicon decreases
systematically when the wavelength increases. On the
other hand, the optical absorption coefficient increases
with increasing wavelength. This phenomenon can be ex-
plained by the presence of free-carrier absorption, in which
the photon energy is absorbed by free carriers in either
conduction or valence bands, by the interaction with the
impurities, and also by the excitation of crystal lattice
oscillation in the defects zone. The refractive index and the
optical coefficient are insensitive to the impurities in the
visible region, see Figs. 9 and 10. All of these results quite

'(a). (b):i:; -+
< ~: -?>- . .

N
'4+i
_2 0 ~

;
+~

~-,+'-+2
-.?f

\
~ < - t =<i:_,

~-- " , +. ' .~". 2+~. . . . . . +

yr..

Fig. 7. Roughness of undoped polysilicon, as observed by AFM for a time of deposition of(a) I5 min and (b) 30 rain.
 Y. Laghla, E. Scheid / Thin S o l i d F i h n s 306 (1997) 6 7 - 7 3 71

5,5 '~ ' ! ! ': : ; 0 46

: . + P-doped
o B-doped
\
I -, - doped Phosphorus
i - - doped Boron
~P :'i " ,: ............. : .......... : .... dop~ \
II undoped
\
| "~ - - Si-mono ref[19] \
.×g. . : . .
undoped ref[16] \
x 0.42 x
×/i}" , ,
o x/~ , - - P-doped reff16] \ \
4.8 o x ~ . . . . \ \
\
: ~ i " P-dc Fed left2( ] \ \
\ \
\
0.4 \ \
o \ x
\
\
4 , , "~'*'~ \

0.38 \

0,36 -..--...
-+
i i ,
3 400 600 800 1000 1200 1400 1600 1800 2000 0"3~00 450 800 880 600 650
wavelength (nm) wavelength (nm)

Fig. 9. Refractive index of undoped, P-, and B-doped polysilicon with Fig. I2. Calculated reflectance for undoped, P- or B-doped polysilicon,
thicknesses of 562 nm, 574 nm and 601 nm, respectively. 562 nm, 574 nm and 60t nm, respectively.

agree with those found in the literature [21-23]. On the

107~ ~ ! ! [ -. r ,. J . J
other hand, we can see the marked effect of the doping
' doped Phosphorus.

L
+
' o doped Boron
impurities on the optical properties. This phenomenon is
~°~ ' i ':-!i: > v-::.-:; ~ ui~d&;~'d :'Z ~::27 the result of structural improvement with dopant that agrees
! ' ' !' :!! !::: I--Si-mo . . . . f[;9 i .... with our SEM observations which shows an increase of the
• undoped grain size with increasing doping level [24].
105 ~.a~ ' " ' I"- d°pe~Ph°sph°r~s;efii6i-:re~161
,

~ ' ~ ? doped PhosphGrus ref[20l

3.2.3. Absolute reflectance
i eo. : :::: In Fig. 12, we calculated the reflectance for each un-
. " - Q .g-~ ::i o + . . . . . . . :, doped, doped polysilicon from equation:
(1 - n(A)) 2 + k(A) a
R(A) = (13)
(1 + , I ( A ) ) 2 + k(A) 2
MI ' " "~""-~":<~: ......... 7 ~ i : ........ ~-': .....
in the 3 5 0 - 6 0 0 nm range. Up to 500 nm, the curve of
F
10"400 6(}0 8(10 10~3 12rO0 14100 1600 1800 2000
P-doped Si is higher than undoped or B-doped polysilicon.
wavelength (nm) This can be explained by the microstructure of P-doped Si
Fig. i0. Optical coefficient of absorption of undoped, P-, and B-doped compared to those of undoped and B-doped Si. Indeed, the
polysilicon with thicknesses of 562 nm, 574 nm and 601 nm, respec- grain size for P-doped Si is much smaller than that of
tively. B-doped silicon, and the defect density is much higher,
that gives rise to a metallic character of the layer. These
1
results are confirmed by SEM measurements, which give
grain sizes of 100 nm for P-doped Si and 250 nm for
0.9 -- Texp
B-doped Si.
+ Teal
0,8 ~ -- Rexp

0.7 I
3.3. Free carriers absorption

0,8 The systematic variation of the index of refraction and

I-
~: 0.5
optical absorption for B- or P-doped polysilicon is at-
tributed to the interaction with the free carriers. According
to the classical theory [25] of free-carrier dispersion the
real part e' and the imaginary part d' of dielectric

:ifY
0,3 i
function can be written as:

~'(~o) ,~- k2 o0;1-- (14)

= - = 8r-- 1+ o21-2
400 600 8()0 1000 12~00 14~00 16r00 18100 2000
wavelength (rim) O9p1- -

Fig. 1I. Calculated transmittance and reflectance compared to {fie experi- d'(o)) =2nk=ei+ (o1-(1+(oe1- :) (15)
mentals spectra for P-doped polysilicon with thickness 574 nm.
72 Y. I.zlghla, E. Scheid / Thin Solid Fihns 306 (1997) 67-73

,3 i lines in Fig. 13; Np = 1.06 )< 102°cm -3, and N~ = t.46 X

o dope Phosphore
-- + dope Bore
t020cm -3.
12.5
A comparison of the measured carrier concentrations
12 and doping concentrations gives the fraction of the concen-
tration of B or P that is electrically active, i.e, (13.25%)
1"I,5
and (24.3%) respectively. From sheet-resistance measure-
~" 11 o
ments, we deduce the mobilities for B or P-doped: /,p =
13.5 cm2/vs, and # , = 5 . 9 cm~/vs respectively. By
'TO.5 Hall-effect measurement, we obtained the carrier concen-
trations Np = 1.58 × 10Z°cm -3, and N,, = 1.36 ×
10 102°cm -3 corresponding to mobilities /.tp = 9.03 cme/vs
and /x, = 6.38 cm2/vs for B or P-doped polysilicon re-
9.5
spectively. These values are in good accordance with the
9 , r , L , , • i , L theoretical ones.
0 0.5 1 1,5 2 2.5 3 3.5 4 4,5
~2 (m 2) x 10 "~2 The low value for the mobilities in our sample is
Fig. 13. Plot of n 2 verssus A~ for in situ P- or B-doped polysilicon, with
attributed to the small grain size of polysilicon and the
thickness 574 nm and 601 rim, respectively. high grain boundaries density which create potential barri-
ers which prevent the free circulation from free carriers of
one grain to another.

where g~, e i are the real and imaginary parts of the

dielectric constant of the undoped polysilicon, r is the
relaxation time, w is the angular frequency of the incident
radiation, and ~Op is the plasma frequency given by:
% = ---
gO m
where q is the electronic charge, N is the carrier concen-
tration s 0, is the permitivity of free space, and m ~ is the
effective mass of the carriers (0.28m e for electrons [251
and 0.37m~ for holes [26]). In the 1200-1800 nm range,
the optical absorption coefficient oe < 104cm - 1 and n > 3,
then n 2 >> k 2 and ~o2r~ >> 1. With these simplifications
Eq. (14) becomes:
(2) 2
,?- = - (1 v)
where n, is the refractive index for undoped polysilicon in
the infrared region (independent of the wavelength). Fi-
nally the refractive index can be written as:
4. Conclusion
The optical constants of undoped, and in-situ P- or
B-doped polysilicon are calculated in both visible and
(16) infrared regions. The refractive index and the optical ab-
sorption coefficient for undoped polysilicon vary, with the
thickness, which is attributed to the presence of surface
roughness which increases with increasing thickness. For
P- or B-doped polysilicon, the variation of the optical
constants in the infrared region can be assigned to the
presence of the free carriers in conduction or valence
bands. Drude's theory was used to calculate the concentra-
tion of free carriers. A good comparison is obtained with
the results of Hall measurement.
A practical consequence of our work is to determine the
relevant thicknesses of different layers to be deposited for
the fabrication of solar cells. In particular, it can already be
stated that the base thickness can be minimized approxi-
mately t0 /xm with our processing conditions [27].

n2 = " 1 2 - - ( 47rsc'mq2NA2
) ,.
We plotted n'- versus A2 in Fig. 13 for B- or P-doped
polysilicon.
The intercept with the n: axis gives n 2, the theoretical
refractive index of undoped polysilicon in the infrared
region, which equals 3.291, deduced from B-doped Si. and
3.406 deduced from P-doped silicon. These values agree
with the refractive index for undoped polysilicon nt5 =
3.4137, n30 = 3.305, n40 3.251, where his, n30, and /740
=
are the experimental refractive indices for undoped polysil-
icon films with thicknesses of 255, 562 and 684 nm. We
obtained the carrier concentration N from the slope of the
(18)
Appendix A
The film is considered homogeneous, isotropic and
bounded by plane-parallel surfaces. It has a thickness d
and a complex refractive index defined by ~(A) = n(A) -
ik(A), supported by a thick fiat non-absorbing substrate
having a refractive index n~. The first medium is usualty
air, with refractive index n 0 = l. The transmittance Tth and
reflectance RLh are deduced from Heavens [11,28]:
:r,,<
, (19)
1 - R ~ R t.
 Y, LaghIa, E. Scheid / Thin Solid Fihns 306 (1997) 67-73 73
-)
Tf'R~ T~ and R~ are respectively the transmittance and re-
Rth = Rf + (20) flectance of the second surface of the substrate, the sub-
1 -R,R'f
strate-air interface.
Tf
C
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y = - -
A [27] Y. Laghla, H, Vergnes, E. Sheid, J.P. Couderc, 14th European
Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997,
Tt. , Rf and R'f are the transmittance, the reflectance on the accepted for publication.
air side, and the reflectance on the substrate side respec- [28] O.S. Heavens, Optical Properties of Thin Solid Films, Dover Publi-
tively for a system with a film on a semi-infinite substrate. cation, New York. 1965, p. 74.