AVAGO Transistor Selection Guide

Transistors
Selection Guide
Silicon Bipolar Transistors

NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which
optimize these parameters.
Low Noise Transistors (Typical Specifications @ 25°C Case Temperature)
Part Frequency VCE NFo Ga P1 dB G1 dB |S21E|2 @ 1.0 GHz Package
Number (GHz) (V) (dB) (dB) (dBm) (dBm) (dB)
AT-30511 0.9 2.7 1.1 16.0 +7.0 16.5 17.9 [1] SOT-143 plastic SM
AT-30533 0.9 2.7 1.1 13.0 +7.0 15.0 15.2 [1] SOT-23 plastic SM
AT-31011 0.9 2.7 0.9 13.0 +9.0 14.0 19.1 [1] SOT-143 plastic SM
AT-31033 0.9 2.7 0.9 11.0 +9.0 12.0 15.8 [1] SOT-23 plastic SM
AT-32011 0.9 2.7 1.0 14.0 +13.0 16.5 18.9 [1] SOT-143 plastic SM
AT-32032 0.9 2.7 1.0 15.0 +13.0 15.5 11.5 [1] SOT-323 plastic SM
AT-32033 0.9 2.7 1.0 12.5 +13.0 14.5 15.1 [1] SOT-23 plastic SM
AT-32063 [2] 0.9 2.7 1.1 14.5 +12.0 16.0 17 .0 [1] SOT-363 plastic SM
AT-41411 2.0 8.0 1.8 13.0 +17.0 13.0 16.7 SOT-143 plastic SM
AT-41435 2.0 8.0 1.7 14.0 +19.0 14.0 17.2 micro-X SM
AT-41486 1.0 8.0 1.4 18.0 +18.0 13.5 [3] 17.5 85 mil plastic SM
AT-41511 0.9 5.0 1.0 15.5 +14.5 17.5 15.8 [1] SOT-143 plastic SM
AT-41532 0.9 5.0 1.0 15.5 +14.5 14.5 13.3 [1] SOT-323 plastic SM
AT-41533 0.9 5.0 1.0 14.5 +14.5 14.5 13.9 [1] SOT-23 plastic SM
AT-41586 1.0 8.0 1.4 17.0 +18.0 13.0 [3] 17.0 85 mil plastic SM
AT-42036 2.0 8.0 1.9 13.5 +21.0 14.0 16.6 micro-X SM
AT-42070 2.0 8.0 1.9 14.0 +21.0 15.0 17.3 70 mil stripline
AT-42085 2.0 8.0 1.9 13.5 +20.5 14.0 17.0 85 mil plastic
AT-42086 2.0 8.0 1.9 13.0 +20.5 13.5 16.5 85 mil plastic SM
Medium Power Transistors (Typical Specifications @ 25°C Case Temperature)

Part VCE P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz Package
Number (V) (dBm) (dBm) (dBm) (dBm)
AT-64020 16.0 +28 10.0 +27 6.5 200 mil BeO disk
Notes:
1. Typical at 900 MHz
2. Dual transistor — All data is per individual transistor.
3. Typical G1 dB at 2 GHz
Gallium Arsenide (GaAs) Field Effect Transistors (FETs)
NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters.
Single Voltage Low Noise E-pHEMTs [1] (Typical Specifications @ 25°C Case Temperature)
Part Gate Width Frequency Test Freq. Vdd I dd NFo Ga OIP3 P1 dB Package
Number (µm) Range (GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm)
New ATF-50189 6400 0.05 - 6 2 4.5 280 1.1 15.5 45.3 +29.1 SOT-89
New ATF-501P8 6400 0.05 - 6 2 4.5 280 1.8 14.6 47.0 +28 LPCC[3]
ATF-511P8 6400 0.05 - 6 2 4.5 200 1.4 14.8 41.7 +30 LPCC [3]
ATF-521P8 3200 0.05 - 6 2 4.5 200 1.5 17.0 42 +26.5 LPCC [3]
ATF-531P8 1600 0.05 - 6 2 4.0 135 0.6 20.0 38 +24.5 LPCC [3]
ATF-54143 800 0.45 - 6 2 3 60 0.5 16.6 36.2 +20 SOT-343 (SC-70)
ATF-541M4 800 0.45 - 10 2 3 60 0.5 17.5 35.8 +21 MiniPak[2]
ATF-55143 400 0.45 - 6 2 2.7 10 0.6 17.7 24.2 +14 SOT-343 (SC-70)
ATF-551M4 400 0.45 - 10 2 2.7 10 0.5 17.5 24.1 +15 MiniPak[2]
New ATF-58143 800 0.45 - 6 2 3 30 0.5 16.5 30.5 +19 SOT-343 (SC-70)
Low Noise pHEMTs (Typical Specifications @ 25°C Case Temperature)

Part Gate Width Frequency Test Freq. Vdd I dd NFo Ga OIP3 P1 dB Package
Number (µm) Range (GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm)
ATF-33143 1600 0.45 - 6 2 4 80 0.5 15.0 33.5 +22 SOT-343 (SC-70)
ATF-331M4 1600 0.45 - 6 2 4 60 0.6 15.0 31 +19 MiniPak[2]
ATF-34143 800 0.45 - 6 2 4 60 0.5 17.5 31.5 +20 SOT-343 (SC-70)
ATF-35143 400 0.45 - 6 2 2 15 0.4 18.0 21 +10 SOT-343 (SC-70)
ATF-38143 800 0.45 - 6 2 2 10 0.4 16.0 22 +12 SOT-343 (SC-70)
ATF-36077 200 1.5 - 18 12 1.5 10 0.5 12.0 — +5 70 mil SM
ATF-36163 200 1.5 - 18 12 1.5 15 1.2 10.0 — +5 SOT-363 (SC-70)
Notes:
1. Avago’s enhancement mode E-pHEMT devices are the first commercially available single-supply GaAs transistors that do not need a negative gate
bias voltage for operation. They can help simplify the design and reduce the cost of receivers and transmitters in many RF applications.
2. MiniPak is a thin miniature packaging with the following dimension: 1.4 mm (L) x 1.2 mm (W) x 0.7 mm (D)
3. LPCC (Leadless Plastic Chip Carrier) is a copper leadframe based plastic molded package with the following dimensions:
2.0 mm (L) x 2.0 mm (W) x 0.75 mm (D)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved.
Obsoletes 5988-9509EN
5989-0925EN May 24, 2006
ATF-33143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description Features
Avago’s ATF-33143 is a high dynamic range, low noise • Lead-free Option Available
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount • Low Noise Figure
plastic package.
• Excellent Uniformity in Product Specifications
Based on its featured performance, ATF-33143 is ideal for
• 1600 micron Gate Width
the first or second stage of base station LNA due to the
excellent combination of low noise figure and enhanced • Low Cost Surface Mount Small Plastic Package
linearity[1]. The device is also suitable for applications in SOT‑343 (4 lead SC-70)
Wireless LAN, WLL/RLL, MMDS, and other systems requiring • Tape-and-Reel Packaging Option Available
super low noise figure with good intercept in the 450 MHz
to 10 GHz frequency range.
Specifications
Note: 1.9 GHz; 4V, 80 mA (Typ.)
1. From the same PHEMT FET family, the smaller geometry ATF-
34143 may also be considered for the higher gain performance, • 0.5 dB Noise Figure
particularly in the higher frequency band (1.8 GHz and up).
• 15 dB Associated Gain
Surface Mount Package SOT-343 • 22 dBm Output Power at 1 dB Gain Compression
• 33.5 dBm Output 3rd Order Intercept
Applications
• Tower Mounted Amplifier, Low Noise Amplifier and
Driver Amplifier for GSM/TDMA/CDMA Base Stations
• LNA for Wireless LAN, WLL/RLL and MMDS
Pin Connections and Package Marking Applications
• General Purpose Discrete PHEMT for other Ultra Low
DRAIN SOURCE Noise Applications
3Px
SOURCE GATE
Attention: Observe precautions for
handling electrostatic sensitive devices.
Note:
ESD Machine Model (Class A)
Top View. Package marking provides
orientation and identification. ESD Human Body Model (Class 0)
“3P” = Device code Refer to Avago Application Note A004R:
“x” = Date code character. A new character Electrostatic Discharge Damage and Control.
is assigned for each month, year.
ATF-33143 Absolute Maximum Ratings[1]
Notes:
Absolute 1. Operation of this device above any one of
Symbol Parameter Units Maximum these parameters may cause permanent
VDS Drain - Source Voltage [2] V 5.5 damage.
2. Assumes DC quiesent conditions.
VGS Gate - Source Voltage [2] V -5 3. VGS = 0 V
VGD Gate Drain Voltage [2] V -5 4. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 60°C.
IDS Drain Current[2] mA Idss[3] 5. Please refer to failure rates in reliability
Pdiss Total Power Dissipation[4] mW 600 section to assess the reliability impact
of running devices above a channel
Pin max RF Input Power dBm 20 temperature of 140°C.
TCH Channel Temperature [5] °C 160 6. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
TSTG Storage Temperature °C -65 to 160
θjc Thermal Resistance [6] °C/W 145
Product Consistency Distribution Charts [8, 9]

500 120
Cpk = 1.7
+0.6 V
Std = 0.05
100
400
80
300
0V -3 Std +3 Std
I DS (mA)
60
200
40
100 –0.6 V 20
0 0
0 2 4 6 8 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V DS (V) NF (dB)
Figure 1. Typical Pulsed I-V Curves[7]. (VGS = -0.2 V per step) Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
100 120
Cpk = 1.21 Cpk = 2.3
Std = 0.94 Std = 0.2
100
80
80
60
-3 Std +3 Std -3 Std +3 Std
60
40
40
20
20
0 0
29 31 33 35 37 13 14 15 16 17
OIP3 (dBm) GAIN (dB)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA. Figure 4. Gain @ 2 GHz, 4 V, 80 mA.

LSL=30.0, Nominal=33.3, USL=37.0 LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum
Pdiss and Pin max ratings are not exceeded.
8. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test requirements. Circuit losses have been de-embedded from actual measurements.
10. The probability of a parameter being between ±1σ is 68.3%, between ±2σ is 95.4% and between ±3σ is 99.7%.
2
ATF-33143 DC Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameters and Test Conditions Units Min. Typ.[2] Max.
Idss [1] Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 175 237 305
VP [1] Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35
Id Quiescent Bias Current VGS = -0.5 V, VDS = 4 V mA — 80 —
gm[1] Transconductance VDS = 1.5 V, gm = Idss /VP mmho 360 440 —
IGDO Gate to Drain Leakage Current VGD = 5 V µA 1000
Igss Gate Leakage Current VGD = VGS = -4 V µA — 42 600
f = 2 GHz VDS = 4 V, IDS = 80 mA dB 0.5 0.8
VDS = 4 V, IDS = 60 mA 0.5
NF Noise Figure
f = 900 MHz VDS = 4 V, IDS = 80 mA dB 0.4
VDS = 4 V, IDS = 60 mA 0.4
f = 2 GHz VDS = 4 V, IDS = 80 mA dB 13.5 15 16.5
VDS = 4 V, IDS = 60 mA 15
Ga Associated Gain[3]
f = 900 MHz VDS = 4 V, IDS = 80 mA dB 21
VDS = 4 V, IDS = 60 mA 21
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 30 33.5
Output 3rd Order 5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA 32
OIP3
Intercept Point [3] f = 900 MHz VDS = 4 V, IDS = 80 mA dBm 32.5
5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA 31
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 22
1 dB Compressed VDS = 4 V, IDS = 60 mA 21
P1dB
Compressed Power [3] f = 900 MHz VDS = 4 V, IDS = 80 mA dBm 21
VDS = 4 V, IDS = 60 mA 20
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input 50 Ohm Input 50 Ohm Output

Transmission Matching Circuit Transmission
Line Including G_mag = 0.20 DUT Line Including
Gate Bias T G_ang = 124 Drain Bias T
(0.5 dB loss) (0.3 dB loss) (0.5 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from
actual measurements.
3
ATF-33143 Typical Performance Curves
40 40
2V
3V
4V
30 30
OIP3, IIP3 (dBm)
OIP3, IIP3 (dBm)

20 20
10 10
2V
3V
4V
0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
IDSQ (mA) IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias[1] at 2 GHz. Figure 7. OIP3, IIP3 vs. Bias[1] at 900 MHz.
25 25
20 20
P1dB (dBm)
P1dB (dBm)
15 15
10 10
5 2V 5 2V
3V 3V
4V 4V
0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
IDSQ (mA) IDSQ (mA)
Figure 8. P1dB vs. Bias[1,2] at 2 GHz. Figure 9. P1dB vs. Bias[1,2] Tuned for NF @ 4V, 80 mA at
900 MHz.
16 1.4 22 1.2
15 1.2 21 1.0
Ga
NOISE FIGURE (dB)
NOISE FIGURE (dB)
14 1.0 20 0.8
Ga
Ga (dB)
Ga (dB)
13 0.8 19 0.6
NF
12 0.6 18 0.4
NF
11 0.4 17 2V 0.2
2V
3V
3V
4V
4V
10 0.2 16 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
IDSQ (mA) IDSQ (mA)
Figure 10. NF and Ga vs. Bias[1] at 2 GHz. Figure 11. NF and Ga vs. Bias[1] at 900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
4
ATF-33143 Typical Performance Curves, continued
1.5 30
80 mA 80 mA
60 mA 25 60 mA
1.0 20
Fmin (dB)
Ga (dB)
15
0.5 10
0 0
0 2 4 6 8 10 0 2 4 6 8 10
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4V. Figure 13. Associated Gain vs. Frequency and
Current at 4V.
25 2.0 40
25C 25C
-40C -40C
85C 85C
35
20 1.5
NOISE FIGURE (dB)
P1dB, OIP3 (dBm)
30
Ga (dB)
15 1.0
25
10 0.5
20
5 0 15
0 2 4 6 8 10 0 2000 4000 6000 8000
FREQUENCY (GHz) FREQUENCY (MHz)
Figure 14. Fmin and Ga vs. Frequency and Temp at Figure 15. P1dB, OIP3 vs. Frequency and Temp at
VDS = 4V, IDS = 80 mA. VDS = 4V, IDS = 80 mA.
35 3.5 35
30 P1dB 3.0 30 3
OIP3, P1dB (dBm), GAIN (dB)
OIP3, P1dB (dBm), GAIN (dB)
OIP3
NOISE FIGURE (dB)
NOISE FIGURE (dB)
25 Gain 2.5 25
NF
20 2.0 20 2
15 1.5 15
10 1.0 10 1
5 0.5 5 P1dB Gain

OIP3 NF
0 0 0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
IDSQ (mA) IDSQ (mA)
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1,2] at
3.9 GHz. 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
5
25 25
20 20
15 15
P 1d B (dBm)
P 1dB (dBm)
10 10
5 5
0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
I DS (mA) I DS (mA)
Figure 18. P1dB vs. IDS Active Bias[1] Tuned for NF @ Figure 19. P1dB vs. IDS Active Bias[1] Tuned for NF @
4V, 80 mA at 2 GHz. 4V, 80 mA at 900 MHz.
Note:
1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This
circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board
requirements. Circuit losses have been de-embedded from actual measurements.
6
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq P1dB Id G1dB PAE1dB P3dB Id PAE3dB Γ Out_mag Γ Out_ang
(GHz) (dBm) (mA) (dB) (%) (dBm) (mA) (%) (Mag.) (°)
0.9 20.7 89 23.2 33 23.2 102 51 0.39 160
1.5 21.2 91 20.7 36 23.8 116 51 0.43 165
1.8 21.1 80 19.2 40 23.0 94 52 0.43 170
2.0 21.6 81 18.1 44 23.2 89 57 0.42 174
4.0 23.0 97 11.9 48 24.6 135 48 0.40 -150
6.0 24.0 130 5.9 36 25.2 136 36 0.37 -124
70
Pout
60 Gain
Pout (dBm), G (dB), PAE (%)
50 PAE
40
30
20
10
-10
-20
-40 -30 -20 -10 0 10 20
Pin (dBm)
Figure 20. Swept Power Tuned for Max P1dB

VDS =4V, IDSQ = 80 mA, 2 GHz.
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending
on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done
with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
7
ATF-33143 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA
Freq. S11 S21 S12 S22 MSG/MAG
(GHz) Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. (dB)
0.5 0.88 -72.70 22.08 12.81 134.40 -27.02 0.045 54.50 0.28 -118.70 24.54
0.8 0.79 -112.10 19.46 9.41 111.20 -24.13 0.062 40.70 0.37 -149.90 21.81
1.0 0.78 -119.80 18.86 8.86 106.50 -23.93 0.064 38.00 0.38 -155.40 21.41
1.5 0.75 -149.60 16.11 6.44 88.30 -22.57 0.075 29.80 0.42 -176.20 19.34
1.8 0.74 -162.80 14.70 5.47 79.80 -22.14 0.079 26.80 0.45 174.70 18.40
2.0 0.74 -170.10 13.84 4.94 74.80 -21.84 0.082 24.90 0.46 169.40 17.80
2.5 0.74 172.30 11.98 3.98 63.00 -21.24 0.088 20.80 0.49 160.10 16.56
3.0 0.75 159.10 10.37 3.31 53.10 -20.68 0.094 17.10 0.51 152.10 15.46
4.0 0.75 137.00 7.95 2.50 35.00 -19.59 0.106 9.30 0.53 139.20 13.73
5.0 0.76 117.20 6.20 2.05 17.20 -18.56 0.119 -0.70 0.54 124.70 11.44
6.0 0.78 98.10 4.69 1.73 -1.30 -17.83 0.129 -12.80 0.54 108.00 9.80
7.0 0.80 80.10 3.12 1.44 -19.30 -17.42 0.135 -26.00 0.57 90.40 8.35
8.0 0.83 64.50 1.68 1.22 -35.20 -17.29 0.137 -37.30 0.60 74.80 7.43
9.0 0.83 50.30 0.48 1.07 -49.30 -17.08 0.140 -46.80 0.63 62.70 6.45
10.0 0.86 36.30 -0.46 0.96 -64.30 -16.59 0.148 -58.30 0.65 50.90 6.41
11.0 0.88 21.50 -1.50 0.85 -80.20 -16.53 0.149 -71.30 0.68 37.40 6.14
12.0 0.90 7.20 -2.70 0.74 -95.80 -16.81 0.144 -83.90 0.72 21.40 5.64
13.0 0.91 -5.00 -4.24 0.62 -110.20 -17.38 0.135 -95.60 0.75 5.80 4.60
14.0 0.91 -15.50 -5.49 0.54 -121.90 -17.78 0.129 -103.90 0.77 -5.70 3.64
15.0 0.92 -27.50 -6.42 0.49 -134.20 -18.00 0.126 -113.70 0.80 -15.80 3.44
16.0 0.93 -40.50 -7.26 0.44 -146.80 -17.87 0.128 -124.20 0.82 -25.70 3.22
17.0 0.94 -52.30 -8.20 0.40 -160.40 -18.07 0.125 -136.40 0.83 -37.90 3.11
18.0 0.93 -61.20 -9.51 0.34 -171.00 -18.79 0.115 -145.10 0.85 -49.70 1.79
ATF-33143 Typical Noise Parameters

VDS = 2V, IDS = 40 mA 40
Freq. Fmin Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB 30
MSG/MAG and |S21|2 (dB)
0.5 0.26 0.45 26.00 0.07 24.74 MSG
0.9 0.30 0.38 42.20 0.07 21.02 20

1.0 0.31 0.36 44.80 0.07 20.36
MAG
1.5 0.34 0.31 69.50 0.06 17.40 10
1.8 0.34 0.26 93.60 0.04 16.50

2.0 0.39 0.27 108.60 0.05 15.82 0
|S21|2
2.5 0.51 0.28 150.70 0.03 14.59
3.0 0.53 0.32 165.60 0.03 13.13 -10
0 5 10 15 20
4.0 0.61 0.41 -162.10 0.04 11.27 FREQUENCY (GHz)
5.0 0.70 0.49 -136.80 0.06 9.92
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2V, 40 mA.
6.0 0.82 0.53 -113.60 0.11 8.70
7.0 0.93 0.59 -91.50 0.23 7.71
8.0 1.04 0.62 -72.60 0.38 6.69
9.0 1.12 0.67 -55.90 0.59 6.04
10.0 1.21 0.69 -42.20 0.77 5.73
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-33143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
0.5 0.87 -72.20 22.51 13.42 134.40 -27.20 0.044 54.40 0.27 -109.80 24.84
0.8 0.78 -111.60 19.88 9.87 111.20 -24.27 0.061 40.60 0.35 -143.70 22.09
1.0 0.77 -119.30 19.28 9.26 106.50 -24.06 0.063 37.90 0.36 -150.10 21.67
1.5 0.74 -149.00 16.52 6.73 88.30 -22.79 0.073 29.80 0.40 -172.10 19.64
1.8 0.73 -162.20 15.11 5.72 79.90 -22.34 0.077 26.90 0.42 178.40 18.71
2.0 0.73 -169.50 14.24 5.17 74.80 -22.13 0.079 25.00 0.43 172.90 18.16
2.5 0.73 172.90 12.38 4.17 63.10 -21.41 0.086 21.10 0.46 163.10 16.85
3.0 0.74 159.70 10.78 3.46 53.30 -20.91 0.091 17.50 0.48 154.80 15.80
4.0 0.74 137.60 8.37 2.62 35.20 -19.79 0.103 10.00 0.50 141.20 14.06
5.0 0.75 117.70 6.63 2.15 17.30 -18.80 0.115 0.00 0.51 126.50 11.53
6.0 0.77 98.60 5.10 1.80 -1.30 -17.99 0.126 -11.90 0.52 109.80 9.99
7.0 0.79 80.60 3.54 1.51 -19.50 -17.58 0.132 -24.90 0.55 92.10 8.57
8.0 0.82 64.90 2.10 1.28 -35.50 -17.44 0.134 -36.00 0.57 76.20 7.64
9.0 0.83 50.70 0.92 1.12 -49.60 -17.13 0.139 -45.50 0.60 64.00 6.69
10.0 0.86 36.60 -0.04 1.00 -64.90 -16.64 0.147 -57.00 0.63 52.10 6.65
11.0 0.88 21.90 -1.11 0.89 -81.00 -16.58 0.148 -70.10 0.66 38.60 6.38
12.0 0.90 7.50 -2.32 0.77 -96.80 -16.81 0.144 -82.70 0.70 22.60 6.00
13.0 0.91 -4.80 -3.86 0.64 -111.40 -17.38 0.135 -94.40 0.73 6.80 4.90
14.0 0.91 -15.40 -5.11 0.56 -123.30 -17.78 0.129 -103.00 0.76 -5.00 3.90
15.0 0.92 -27.40 -6.05 0.50 -135.90 -17.93 0.127 -112.80 0.79 -15.10 3.71
16.0 0.93 -40.40 -6.95 0.45 -148.70 -17.87 0.128 -123.40 0.81 -25.10 3.48
17.0 0.94 -52.30 -7.91 0.41 -162.30 -18.00 0.126 -135.70 0.82 -37.30 3.41
18.0 0.93 -61.30 -9.25 0.35 -172.90 -18.72 0.116 -144.30 0.84 -49.10 1.94

40
VDS = 3 V, IDS = 40 mA
Freq. Fmin Γopt Rn/50 Ga 30
GHz dB Mag. Ang. - dB MSG

0.5 0.24 0.45 28.40 0.07 25.26 20
0.9 0.29 0.38 40.90 0.07 21.26
MAG
1.0 0.31 0.34 42.60 0.07 20.50 10
1.5 0.37 0.28 66.30 0.07 17.67
1.8 0.34 0.25 90.10 0.05 16.57 0
|S21|2
2.0 0.38 0.25 105.80 0.05 15.93
2.5 0.51 0.28 147.40 0.03 14.72 -10
0 5 10 15 20
3.0 0.52 0.31 162.80 0.03 13.29
FREQUENCY (GHz)
4.0 0.58 0.40 -165.20 0.03 11.45
5.0 0.68 0.46 -138.50 0.05 10.05 Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3V, 40 mA.
6.0 0.80 0.54 -115.00 0.09 8.97
7.0 0.89 0.57 -92.50 0.20 7.90
8.0 1.01 0.61 -72.80 0.35 6.90
9.0 1.09 0.65 -56.40 0.53 6.26
10.0 1.18 0.68 -42.60 0.69 5.99
Notes:
9
0.5 0.87 -75.30 22.95 14.06 133.00 -28.18 0.039 55.10 0.27 -124.20 25.57
0.8 0.78 -114.70 20.22 10.26 110.00 -25.19 0.055 42.60 0.36 -153.90 22.71
1.0 0.77 -122.30 19.59 9.56 105.50 -24.89 0.057 40.50 0.37 -158.80 22.24
1.5 0.74 -151.60 16.78 6.91 87.60 -23.37 0.068 33.50 0.41 -178.70 20.07
1.8 0.73 -164.60 15.35 5.87 79.30 -22.87 0.072 30.80 0.43 172.60 19.11
2.0 0.73 -171.80 14.47 5.30 74.40 -22.53 0.075 29.00 0.44 167.50 18.49
2.5 0.73 171.00 12.60 4.27 62.80 -21.76 0.082 25.10 0.47 158.50 17.17
3.0 0.74 158.10 10.99 3.54 53.10 -21.07 0.089 21.40 0.50 151.00 16.00
4.0 0.75 136.40 8.56 2.68 35.40 -19.79 0.103 13.20 0.52 138.60 14.15
5.0 0.75 116.90 6.80 2.19 17.70 -18.68 0.117 2.80 0.52 124.40 11.53
6.0 0.77 97.80 5.28 1.84 -0.60 -17.88 0.128 -9.70 0.53 107.80 10.03
7.0 0.79 79.90 3.71 1.53 -18.60 -17.42 0.135 -23.20 0.56 90.20 8.66
8.0 0.82 64.50 2.26 1.30 -34.40 -17.29 0.137 -34.60 0.59 74.70 7.75
9.0 0.83 50.40 1.07 1.13 -48.50 -17.03 0.141 -44.50 0.62 62.70 6.81
10.0 0.86 36.40 0.12 1.02 -63.50 -16.49 0.150 -56.20 0.65 50.90 6.72
11.0 0.88 21.60 -0.94 0.90 -79.50 -16.43 0.151 -69.40 0.68 37.40 6.46
12.0 0.90 7.30 -2.13 0.78 -95.10 -16.71 0.146 -82.10 0.71 21.40 6.04
13.0 0.91 -5.00 -3.67 0.66 -109.70 -17.27 0.137 -94.00 0.74 5.80 4.99
14.0 0.91 -15.50 -4.93 0.57 -121.40 -17.72 0.130 -102.70 0.77 -6.10 3.98
15.0 0.92 -27.50 -5.85 0.51 -133.90 -17.86 0.128 -112.40 0.80 -15.80 3.78
16.0 0.93 -40.60 -6.70 0.46 -146.60 -17.72 0.130 -123.00 0.82 -25.80 3.54
17.0 0.94 -52.30 -7.61 0.42 -160.30 -17.92 0.127 -135.30 0.82 -37.90 3.45
18.0 0.93 -61.40 -8.97 0.36 -170.90 -18.64 0.117 -144.00 0.84 -49.70 2.08

40
0.5 0.23 0.43 29.20 0.06 25.64 20
0.9 0.28 0.35 42.40 0.06 21.62

MAG
1.0 0.29 0.35 45.00 0.07 20.87 10
1.5 0.34 0.26 68.80 0.06 17.84

1.8 0.34 0.23 93.30 0.04 16.89 0
|S21|2
2.0 0.38 0.22 109.70 0.05 16.24
2.5 0.52 0.25 150.60 0.03 14.93 -10
5 10 15
0 20
3.0 0.53 0.30 167.50 0.03 13.52 FREQUENCY (GHz)
4.0 0.61 0.39 -160.30 0.04 11.65
5.0 0.68 0.47 -134.70 0.06 10.28
6.0 0.83 0.52 -112.10 0.11 9.09
7.0 0.91 0.58 -89.70 0.22 8.09
8.0 1.04 0.61 -71.50 0.36 7.07
9.0 1.09 0.66 -54.80 0.56 6.43
10.0 1.13 0.70 -41.40 0.73 6.15
Notes:
10
0.5 0.87 -72.50 22.73 13.74 134.30 -27.39 0.043 54.10 0.26 -104.90 25.04
0.8 0.78 -111.80 20.07 10.09 111.00 -24.42 0.060 40.40 0.33 -140.20 22.26
1.0 0.77 -119.40 19.46 9.43 106.40 -24.20 0.062 37.70 0.34 -147.10 21.82
1.5 0.73 -149.10 16.69 6.85 88.20 -22.90 0.072 29.80 0.38 -169.70 19.78
1.8 0.72 -162.20 15.28 5.82 79.80 -22.44 0.076 26.90 0.40 -179.30 18.84
2.0 0.72 -169.50 14.41 5.26 74.70 -22.23 0.078 25.00 0.41 175.10 18.29
2.5 0.72 173.00 12.55 4.24 63.00 -21.58 0.084 21.20 0.44 165.10 17.03
3.0 0.73 159.80 10.95 3.53 53.20 -21.07 0.089 17.80 0.46 156.50 15.98
4.0 0.74 137.70 8.54 2.68 35.10 -19.93 0.101 10.40 0.48 142.50 14.23
5.0 0.75 117.90 6.80 2.19 17.10 -18.92 0.113 0.70 0.49 127.70 11.54
6.0 0.77 98.80 5.28 1.84 -1.60 -18.11 0.124 -11.20 0.50 111.00 10.07
7.0 0.79 80.80 3.72 1.54 -19.80 -17.68 0.130 -24.10 0.53 93.40 8.68
8.0 0.82 65.10 2.29 1.30 -35.90 -17.50 0.133 -35.10 0.56 77.30 7.77
9.0 0.83 50.90 1.10 1.14 -50.20 -17.23 0.137 -44.60 0.59 64.90 6.80
10.0 0.86 36.80 0.15 1.02 -65.60 -16.69 0.146 -56.10 0.62 53.00 6.78
11.0 0.88 22.00 -0.93 0.90 -81.80 -16.58 0.148 -69.10 0.65 39.50 6.55
12.0 0.90 7.60 -2.14 0.78 -97.60 -16.81 0.144 -81.70 0.69 23.50 6.13
13.0 0.91 -4.70 -3.69 0.66 -112.40 -17.32 0.136 -93.50 0.72 7.50 5.03
14.0 0.91 -15.30 -4.97 0.57 -124.50 -17.78 0.129 -102.10 0.76 -4.30 4.06
15.0 0.92 -27.20 -5.92 0.51 -137.30 -17.93 0.127 -112.20 0.79 -14.60 3.87
16.0 0.93 -40.30 -6.85 0.46 -150.10 -17.79 0.129 -122.80 0.81 -24.50 3.62
17.0 0.94 -52.20 -7.83 0.41 -163.80 -18.00 0.126 -135.10 0.82 -36.80 3.54
18.0 0.93 -61.20 -9.19 0.35 -174.60 -18.72 0.116 -143.80 0.84 -48.70 2.05

40
0.5 0.30 0.44 31.50 0.08 25.59 20
0.9 0.33 0.36 42.70 0.07 21.43

MAG
1.0 0.34 0.33 44.50 0.08 20.63 10
1.5 0.38 0.26 68.70 0.06 17.72

1.8 0.37 0.25 90.70 0.05 16.65 0
|S21|2
2.0 0.40 0.23 106.40 0.05 15.99
2.5 0.53 0.27 145.80 0.04 14.70 -10
0 5 10 15 20
3.0 0.54 0.31 162.00 0.03 13.32 FREQUENCY (GHz)
4.0 0.60 0.38 -165.30 0.04 11.47
5.0 0.68 0.46 -138.80 0.05 10.17
6.0 0.82 0.49 -115.40 0.09 8.93
7.0 0.89 0.56 -93.20 0.19 7.99
8.0 1.00 0.60 -73.10 0.33 7.00
9.0 1.07 0.66 -56.60 0.50 6.40
10.0 1.16 0.68 -42.80 0.65 6.11
Notes:
11
0.5 0.86 -75.60 23.20 14.45 132.90 -28.18 0.039 54.80 0.26 -118.50 25.69
0.8 0.77 -115.00 20.45 10.53 109.80 -25.35 0.054 42.20 0.34 -150.00 22.90
1.0 0.76 -122.50 19.80 9.77 105.30 -25.04 0.056 40.20 0.35 -155.50 22.42
1.5 0.73 -151.80 16.98 7.06 87.50 -23.61 0.066 33.20 0.39 -176.10 20.29
1.8 0.72 -164.60 15.55 5.99 79.20 -22.97 0.071 30.60 0.41 175.00 19.26
2.0 0.72 -171.80 14.66 5.41 74.20 -22.73 0.073 28.90 0.42 169.80 18.70
2.5 0.72 171.00 12.79 4.36 62.70 -21.94 0.080 25.10 0.45 160.60 17.36
3.0 0.73 158.20 11.17 3.62 53.00 -21.31 0.086 21.60 0.47 152.70 16.24
4.0 0.74 136.50 8.76 2.74 35.20 -20.00 0.100 13.70 0.49 139.90 13.79
5.0 0.75 117.00 7.00 2.24 17.50 -18.86 0.114 3.40 0.50 125.70 11.57
6.0 0.77 98.00 5.48 1.88 -1.00 -17.99 0.126 -8.90 0.51 109.10 10.15
7.0 0.79 80.20 3.92 1.57 -19.00 -17.52 0.133 -22.30 0.54 91.60 8.80
8.0 0.82 64.70 2.48 1.33 -34.90 -17.39 0.135 -33.60 0.57 75.90 7.88
9.0 0.83 50.60 1.29 1.16 -49.10 -17.08 0.140 -43.40 0.60 63.70 6.92
10.0 0.86 36.60 0.34 1.04 -64.30 -16.54 0.149 -55.20 0.63 52.00 6.92
11.0 0.88 21.80 -0.72 0.92 -80.40 -16.48 0.150 -68.40 0.66 38.50 6.69
12.0 0.90 7.50 -1.94 0.80 -96.20 -16.71 0.146 -81.10 0.70 22.50 6.27
13.0 0.91 -4.80 -3.48 0.67 -110.80 -17.27 0.137 -92.90 0.73 6.70 5.14
14.0 0.91 -15.40 -4.73 0.58 -122.80 -17.65 0.131 -101.60 0.76 -5.20 4.12
15.0 0.92 -27.30 -5.68 0.52 -135.40 -17.79 0.129 -111.60 0.79 -15.20 3.90
16.0 0.93 -40.40 -6.56 0.47 -148.30 -17.72 0.130 -122.20 0.81 -25.10 3.72
17.0 0.94 -52.20 -7.54 0.42 -162.10 -17.92 0.127 -134.70 0.82 -37.30 3.59
18.0 0.93 -61.20 -8.87 0.36 -172.80 -18.56 0.118 -143.30 0.84 -49.20 2.19

40

0.5 0.29 0.42 31.40 0.08 25.91 20
0.9 0.33 0.33 44.70 0.07 21.80
MAG
1.0 0.34 0.32 48.00 0.07 21.00 10
1.5 0.38 0.26 71.90 0.06 18.14
1.8 0.39 0.22 94.00 0.05 16.96 0
|S21|2
2.0 0.42 0.22 109.70 0.05 16.29
2.5 0.47 0.25 149.40 0.03 14.95 -10
0 5 10 15 20
3.0 0.51 0.29 166.80 0.03 13.58
FREQUENCY (GHz)
4.0 0.63 0.39 -160.60 0.04 11.74
5.0 0.72 0.46 -135.30 0.06 10.36 Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4V, 60 mA.
6.0 0.82 0.51 -112.40 0.11 9.17
7.0 0.93 0.57 -90.90 0.21 8.18
8.0 1.03 0.61 -71.80 0.37 7.19
9.0 1.13 0.66 -55.50 0.55 6.56
10.0 1.22 0.69 -41.80 0.72 6.29
Notes:
12
0.5 0.86 -77.20 23.39 14.76 132.20 -28.82 0.036 55.30 0.26 -125.40 26.13
0.8 0.77 -116.60 20.60 10.71 109.20 -25.86 0.051 43.40 0.34 -154.80 23.22
1.0 0.76 -124.00 19.93 9.91 104.80 -25.49 0.053 41.70 0.36 -159.50 22.72
1.5 0.73 -153.00 17.09 7.15 87.10 -23.86 0.064 35.20 0.39 -179.10 20.48
1.8 0.72 -165.80 15.66 6.06 78.90 -23.31 0.068 32.70 0.41 172.40 19.50
2.0 0.72 -172.90 14.77 5.47 74.00 -22.95 0.071 31.00 0.42 167.30 18.87
2.5 0.72 170.10 12.89 4.41 62.50 -22.03 0.079 27.20 0.45 158.50 17.47
3.0 0.73 157.40 11.27 3.66 53.00 -21.39 0.085 23.50 0.48 151.00 16.34
4.0 0.74 136.00 8.84 2.77 35.30 -20.00 0.100 15.30 0.50 138.80 13.59
5.0 0.75 116.70 7.09 2.26 17.70 -18.86 0.114 4.80 0.51 124.80 11.56
6.0 0.77 97.70 5.57 1.90 -0.70 -17.99 0.126 -7.80 0.52 108.40 10.17
7.0 0.79 80.00 4.00 1.58 -18.70 -17.47 0.134 -21.30 0.55 90.90 8.84
8.0 0.82 64.50 2.55 1.34 -34.50 -17.34 0.136 -32.80 0.58 75.40 7.93
9.0 0.83 50.50 1.36 1.17 -48.70 -17.03 0.141 -42.80 0.61 63.30 6.98
10.0 0.86 36.50 0.43 1.05 -63.80 -16.49 0.150 -54.60 0.63 51.60 6.96
11.0 0.88 21.70 -0.65 0.93 -79.90 -16.38 0.152 -67.80 0.66 38.10 6.73
12.0 0.90 7.40 -1.85 0.81 -95.60 -16.66 0.147 -80.60 0.70 22.10 6.26
13.0 0.91 -4.80 -3.39 0.68 -110.20 -17.21 0.138 -92.60 0.73 6.40 5.21
14.0 0.91 -15.40 -4.64 0.59 -122.00 -17.59 0.132 -101.10 0.76 -5.00 4.20
15.0 0.92 -27.30 -5.57 0.53 -134.80 -17.79 0.129 -111.20 0.79 -15.40 3.98
16.0 0.93 -40.40 -6.46 0.47 -147.60 -17.65 0.131 -121.90 0.81 -25.30 3.73
17.0 0.94 -52.20 -7.40 0.43 -161.40 -17.85 0.128 -134.30 0.82 -37.50 3.65
18.0 0.93 -61.20 -8.75 0.36 -172.10 -18.56 0.118 -143.10 0.84 -49.30 2.24

40
0.5 0.30 0.42 34.50 0.08 26.23 20

0.9 0.35 0.32 46.40 0.07 21.96
MAG
1.0 0.35 0.32 50.40 0.07 21.16 10
1.5 0.40 0.23 74.80 0.06 18.47
1.8 0.42 0.20 98.80 0.05 17.18 0
|S21|2
2.0 0.45 0.19 114.10 0.05 16.48
2.5 0.49 0.23 153.70 0.04 15.09 -10
0 5 10 15 20
3.0 0.55 0.28 171.50 0.03 13.70
FREQUENCY (GHz)
4.0 0.68 0.38 -156.70 0.04 11.85
5.0 0.75 0.48 -133.30 0.07 10.49
6.0 0.90 0.52 -110.70 0.13 9.27
7.0 1.00 0.57 -89.60 0.25 8.27
8.0 1.12 0.62 -70.80 0.43 7.28
9.0 1.19 0.67 -54.60 0.65 6.66
10.0 1.33 0.69 -40.80 0.85 6.31
Notes:
13
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on of the matching networks are non-zero and they will
measurements while the Fmins below 2 GHz have been also add to the noise figure of the device creating a
extrapolated. The Fmin values are based on a set of higher amplifier noise figure. The losses of the matching
16 noise figure measurements made at 16 different networks are related to the Q of the components and
impedances using an ATN NP5 test system. From these associated printed circuit board loss. Γo is typically fairly
measurements, a true Fmin is calculated. Fmin represents low at higher frequencies and increases as frequency is
the true minimum noise figure of the device when the lowered. Larger gate width devices will typically have a
device is presented with an impedance matching network lower Γo as compared to narrower gate width devices.
that transforms the source impedance, typically 50Ω, to
an impedance represented by the reflection coefficient Typically for FETs, the higher Γo usually infers that an
Γo. The designer must design a matching network that impedance much higher than 50Ω is required for the
will present Γo to the device with minimal associated device to produce Fmin. At VHF frequencies and even
circuit losses. The noise figure of the completed amplifier lower L Band frequencies, the required impedance can
is equal to the noise figure of the device plus the losses be in the vicinity of several thousand ohms. Matching to
of the matching network preceding the device. The such a high impedance requires very hi-Q components
noise figure of the device is equal to Fmin only when the in order to minimize circuit losses. As an example at
device is presented with Γo. If the reflection coefficient 900 MHz, when airwwound coils (Q > 100) are used for
of the matching network is other than Γo, then the noise matching networks, the loss can still be up to 0.25 dB
figure of the device will be greater than Fmin based on which will add directly to the noise figure of the device.
the following equation. Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
NF = Fmin + 4 Rn |Γs – Γo | 2
Losses as high as 0.5 dB or greater add to the typical 0.15
Zo (|1 + Γo| 2)(1 –Γs| 2) dB Fmin of the device creating an amplifier noise figure
Where Rn /Zo is the normalized noise resistance, Γo is of nearly 0.65 dB. A discussion concerning calculated
the optimum reflection coefficient required to produce and measured circuit losses and their effect on amplifier
Fmin and Γs is the reflection coefficient of the source noise figure is covered in Avago Application 1085.
impedance actually presented to the device. The losses
Reliability Data
Nominal Failures per million (FPM) 90% confidence Failures per million (FPM)
for different durations for different durations
Channel (FITs) 1 year 5 year 10 year 30 year (FITs) 1 year 5 year 10 year 30 year
Temperature 1000 1000
(oC) hours hours
100 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1
125 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 11
140 <0.1 <0.1 <0.1 <0.1 160 <0.1 <0.1 6 160 9.3K
150 <0.1 <0.1 2 140 26K <0.1 0.3 780 8800 131K
160 <0.1 <0.1 920 21K 370K <0.1 67 24K 120K 520K
180 <0.1 4400 450K 830K 1000K 21 53K 590K 850K 1000K
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of higher temperature
operational life STRIFE of PHEMT process
14
ATF-33143 Die Model
Statz Model
MESFETM1
NFET=yes Cgs=1.6 pF Rc=62.5 Taumd1=no
PFET=no Gdcap=3 Gsfwd=1 Fnc=1E6
Vto=–0.95 Cgd=0.32 pF Gsrev=0 R=0.17
Beta=0.48 Rgd= Gdfwd=1 C=0.2
Lambda=0.09 Tqm= Gdrev=0 P=0.65
Alpha=4 Vmax= Vjr=1 wVgfwd=
B=0.8 Fc= Is=1 nA wBvgs=
Tnom=27 Rd=.125 Ir=1 nA wBvgd=
Idstc= Rg=1 Imax=0.1 wBvds=
Vbi=0.7 Rs=0.0625 Xti= wldsmax=
Tau= Ld=0.00375 nH N= wPmax=
Betatce= Lg-0.00375 nH Eg= Al lParams=
Delta1=0.2 Ls=0.00125 nH Vbr=
Delta2= Cds=0.08 pF Vtotc=
Gscap=3 Crf=0.1 Rin=
This model can be used as a design tool. It has been tested

on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
ATF-33143 Model
INSIDE Package
Var VAR VIA2

Ean
VAR1 V3
K=5 TLINP TLINP D=20.0 mil
Z2=85 TL1 TL2 H=25.0 mil
Z1=30 Z=Z2/2 Ohm Z=Z2/2 Ohm T=0.15 mil
L=20 0 mil L=20 0 mil Rho=1.0
K=K K=K W=40.0 mil
C A=0.0000 A=0.0000
C1 F=1 GHz F=1 GHz
GATE C=0.1 pF TanD=0.001 TanD=0.001
SOURCE
Port L L TLINP TLINP

TLINP TLINP L6 Port
G TL4 TL3 L1 TL7 TL8 S2
Num=1 VIA2 L=0.6 nH L=0.2 nH Z=Z2/2 Ohm Z=Z1 Ohm
Z=Z1 Ohm Z=Z2 Ohm R=0.001 VIA2 Num=4
V1 L=15 mil L=25 mil R=0.001 L=5.0 mil L=15 mil V4
D=20 mil K=1 K=K GaAsFET C K=K K=1 D=20.0 mil
H=25.0 mil A=0.000 A=0.000 FET1 C2 A=0.0000 A=0.0000 H=25.0 mil
T=0.15 mil F=1 GHz F=1 GHz Model=MESFETN1 C=0.11 pF F=1 GHz F=1 GHz T=0.15 mil
Rho=1.0 TanD=0.001 TanD=0.001 Mode=nonlinear TanD=0.001 TanD=0.001 Rho=1.0 DRAIN
W=40 mil W=40.0 mil
SOURCE L
L7 TLINP TLINP Port
L C=0.6 nH TL5 TL6 D
Port TLINP TLINPTL9 Z=Z2 Ohm Z=Z1 Ohm Num=4
S1 L4 MSub R=0.001
VIA2 TL10 Z=Z2 Ohm L=26.0 mil L=15 mil
Num=2 L=10.0 mil L=0.2 nH
V2 Z=Z1 Ohm R=0.001 MSUB K=K K=1
D=20.0 mil L=15 mil K=K MSub1 A=0.0000 A=0.0000
H=25.0 mil K=1 A=0.000 H=25.0 mil F=1 GHz F=1 GHz
T=0.15 mil A=0.000 F=1 GHz Er=9.6 TanD=0.001 TanD=0.001
Rho=1.0 F=1 GHz TanD=0.001 Mur=1
W=40.0 mil TanD=0.001 Cond=1.0E+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
15
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-33143-TR1G 3000 7” Reel
ATF-33143-TR2G 10000 13” Reel
ATF-33143-BLKG 100 antistatic bag
Package Dimensions
SC-70 4L/SOT-343
1.30 (.051)
BSC
HE E
1.15 (.045) BSC
b1
D
A A2
A1
b C
L
DIMENSIONS (mm)
SYMBOL MIN. MAX.

E 1.15 1.35
D 1.85 2.25
HE 1.80 2.40
A 0.80 1.10 NOTES:
A2 0.80 1.00 1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
A1 0.00 0.10
3. Dimensions are exclusive of mold flash & metal burr.
b 0.25 0.40
4. All specifications comply to EIAJ SC70.
b1 0.55 0.70
5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form.
c 0.10 0.20 6. Package surface to be mirror finish.
L 0.10 0.46
16
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30
0.051
1.00
0.039
2.00
0.60 0.079
0.024
0.9
0.035
1.15
0.045
Dimensions in mm
inches
Device Orientation
REEL
TOP VIEW END VIEW

4 mm
CARRIER
TAPE
8 mm
3Px 3Px 3Px 3Px
USER
FEED
DIRECTION
COVER TAPE
17
Tape Dimensions and Product Orientation
For Outline 4T
P D P2
P0
F
W
C
D1
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX. K0 10 MAX.
A0 B0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

CAVITY LENGTH A0 2.40 ± 0.10 0.094 ± 0.004
WIDTH B0 2.40 ± 0.10 0.094 ± 0.004
DEPTH K0 1.20 ± 0.10 0.047 ± 0.004
PITCH P 4.00 ± 0.10 0.157 ± 0.004
BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.010
PERFORATION DIAMETER D 1.55 ± 0.10 0.061 + 0.002
PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004
CARRIER TAPE WIDTH W 8.00 + 0.30 - 0.10 0.315 + 0.012

THICKNESS t1 0.254 ± 0.02 0.0100 ± 0.0008
COVER TAPE WIDTH C 5.40 ± 0.10 0.205 + 0.004
TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.0004
DISTANCE CAVITY TO PERFORATION F 3.50 ± 0.05 0.138 ± 0.002
(WIDTH DIRECTION)
CAVITY TO PERFORATION P2 2.00 ± 0.05 0.079 ± 0.002
(LENGTH DIRECTION)
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-3747EN
AV02-1442EN - September 10, 2009
ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo • PHEMT Technology
morphic High Electron Mobility Transistor (PHEMT), pack- • Ultra-Low Noise Figure:
aged in a low parasitic, surface-mountable ceramic package. 0.5 dB Typical at 12 GHz
Properly matched, this transistor will provide typical 12 0.3 dB Typical at 4 GHz
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures • High Associated Gain:
of 0.3 dB. Additionally, the ATF-36077 has very low noise 12 dB Typical at 12 GHz
resistance, reducing the sensitivity of noise performance to 17 dB Typical at 4 GHz
variations in input impedance match, making the design of
• Low Parasitic Ceramic Microstrip Package
broadband low noise amplifiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal • Tape-and-Reel Packing Option Available
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency Applications
make it appropriate for use in Ku-band Direct Broad-cast • 12 GHz DBS LNB (Low Noise Block)
Satellite (DBS) Television systems, C-band Television Receive • 4 GHz TVRO LNB (Low Noise Block)
Only (TVRO) LNAs, or other low noise amplifiers operating
• Ultra-Sensitive Low Noise Amplifiers
in the 2‑18 GHz frequency range.
25
ASSOCIATED GAIN (dB)

77 Package
20
Ga
1.2 15
NOISE FIGURE (dB)
0.8 10
[1]
NF
0.4
0
0 4 8 12 16 20
Pin Configuration FREQUENCY (GHz)
4 SOURCE Figure 1. ATF-36077 Optimum Noise Figure and Associated

Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
ATF-36077 fig 1
1 3 This GaAs PHEMT device has a nominal 0.2 micron gate

360
GATE DRAIN length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
2 SOURCE sivation assure rugged, reliable devices.
Note: 1. See Noise Parameter Table.

ATF-36077 Absolute Maximum Ratings
Absolute Thermal Resistance[2,3]: θch-c = 60°C/W
Symbol Parameter Units Maximum[1]
VDS Drain – Source Voltage V +3 Notes:
1. Operation of this device above any one of
VGS Gate – Source Voltage V -3
these parameters may cause permanent
VGD Gate-Drain Voltage V -3.5 damage.
2. Measured at Pdiss = 15 mW and Tch = 100°C.
ID Drain Current mA Idss 3. Derate at 16.7 mW/°C for TC > 139°C.
PT Total Power Dissipation[3] mW 180
Pin max RF Input Power dBm +10
Tch Channel Temperature °C 150
ATF-36077 Electrical Specifications,

TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure[1] f = 12.0 GHz dB 0.5 0.6
GA Gain at NF[1] f = 12.0 GHz dB 11.0 12.0
gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 55
Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 45
Vp 10 % Pinch-off Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Characterization Information,

TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
NF Noise Figure (Tuned Circuit) f = 4 GHz dB 0.3[2]
f = 12 GHz dB 0.5
GA Gain at Noise Figure (Tuned Circuit) f = 4 GHz dB 17
f = 12 GHz dB 12
S12 off Reverse Isolation f = 12 GHz, VDS = 1.5 V, VGS = -2 V dB 14
P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
f = 12 GHz dBm 5
VGS 10 mA Gate to Source Voltage for IDS = 10 mA VDS = 1.5 V V -0.2
Note:
2. See noise parameter table.

ATF-36077 Typical Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 0.99 -17 14.00 5.010 163 -36.08 0.016 78 0.60 -14
2.0 0.97 -33 13.81 4.904 147 -30.33 0.030 66 0.59 -28
3.0 0.94 -49 13.53 4.745 132 -27.25 0.043 54 0.57 -41
4.0 0.90 -65 13.17 4.556 116 -25.32 0.054 43 0.55 -54
5.0 0.86 -79 12.78 4.357 102 -24.04 0.063 33 0.53 -66
6.0 0.82 -93 12.39 4.162 88 -23.17 0.069 24 0.50 -78
7.0 0.78 -107 12.00 3.981 75 -22.58 0.074 16 0.48 -89
8.0 0.75 -120 11.64 3.820 62 -22.17 0.078 8 0.46 -99
9.0 0.72 -133 11.32 3.682 49 -21.90 0.080 1 0.44 -109
10.0 0.69 -146 11.04 3.566 37 -21.71 0.082 -6 0.42 -119
11.0 0.66 -159 10.81 3.473 25 -21.57 0.083 -13 0.40 -129
12.0 0.63 -172 10.63 3.401 13 -21.44 0.085 -19 0.38 -139
13.0 0.61 175 10.50 3.349 1 -21.32 0.086 -25 0.37 -149
14.0 0.60 161 10.41 3.315 -12 -21.19 0.087 -32 0.35 -160
15.0 0.58 147 10.36 3.296 -24 -21.04 0.089 -39 0.33 -171
16.0 0.57 131 10.34 3.289 -37 -20.87 0.091 -47 0.31 177
17.0 0.56 114 10.34 3.289 -50 -20.69 0.092 -55 0.29 164
18.0 0.57 97 10.35 3.291 -64 -20.53 0.094 -65 0.26 148
ATF-36077 Typical “Off ” Scattering Parameters,

Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V
Freq. S11 S21 S21 S22
11.0 0.96 -139 -14.2 0.19 -43 -14.2 0.19 -43 0.97 -125
12.0 0.95 -152 -14.0 0.20 -56 -14.0 0.20 -56 0.97 -137
13.0 0.94 -166 -13.8 0.20 -69 -13.8 0.20 -68 0.96 -149

ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
25
Freq. Fmin[1] Γopt Rn /Zo
GHz dB Mag. Ang. - 20
1 0.30 0.95 12 0.40
MSG MAG
2 0.30 0.90 25 0.20 15
GAIN (dB)
4 0.30 0.81 51 0.17 S21
6 0.30 0.73 76 0.13 10
8 0.37 0.66 102 0.09

5
10 0.44 0.60 129 0.05
12 0.50 0.54 156 0.03 0
0 4 8 12 16 20
14 0.56 0.48 -174 0.02
FREQUENCY (GHz)
16 0.61 0.43 -139 0.05
18 0.65 0.39 -100 0.09 Figure 2. Maximum Available Gain, Maximum Stable Gain and
Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA.
ATF-36077 fig 2
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that
will be encountered when matching to the optimum reflection coefficient (Γopt) at these
frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB
at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters,
packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.
77 Package Dimensions Part Number Ordering Information

1.02 Part Number No. of Devices Container
(0.040)
SOURCE 4 ATF-36077-TRl[2] 1000 7" Reel
.51 ATF-36077-STR 100 strip
(0.020)
1 3 Note:
360
GATE DRAIN 2. For more information, see “Tape and Reel Packaging for Semiconduc-
tor Devices,” in “Communications Components” Designer‘s Catalog.
SOURCE 2
1.78
(0.070)
1.22 1.75
(0.048) (0.069)
5.28
.53 (0.208) .10
(0.021) (0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E
AV02-1222EN - April 29, 2008
ATF-36163
1.5 –18 GHz Surface Mount Pseudomorphic HEMT
Data Sheet
The Avago ATF-36163 is a low-noise Pseudomorphic • Lead-free Option Available
High Electron Mobility Transistor (PHEMT), in the SOT-363 • Low Minimum Noise Figure:
(SC‑70) package. When optimally matched for minimum 1 dB Typical at 12 GHz
noise figure, it will provide a noise figure of 1 dB at 12 0.6 dB Typical at 4 GHz
GHz and 0.6 dB at 4 GHz.
• Associated Gain:
Additionally, the ATF-36163 has low noise-resistance, 9.4 dB Typical at 12 GHz
which reduces the sensitivity of noise performance to 15.8 dB Typical at 4 GHz
variations in input impedance match. This feature makes • Maximum Available Gain:
the design of broad band low noise amplifiers much 11 dB Typical at 12 GHz
easier. The performance of the ATF-36163 makes this 17 dB Typical at 4 GHz
device the ideal choice for use in the 2nd or 3rd stage • Low Cost Surface Mount Small Plastic Package
of low noise cascades. The repeatable performance and
consistency make it appropriate for use in Ku-band Direct • Tape-and-Reel Packaging Option Available
Broadcast Satellite (DBS) TV systems, C-band TV Receive
Only (TVRO) LNAs, Multichannel Multipoint Distribution Applications
Systems (MMDS), X-band Radar detector and other low
noise amplifiers operating in the 1.5 –18 GHz frequency • 12 GHz DBS Downconverters
range. • 4 GHz TVRO Downconverters
This GaAs PHEMT device has a nominal 0.2 micron gate • S or L Band Low Noise Amplifiers
length with a total gate periphery (width) of 200 microns.
Proven gold-based metallization system and nitride Pin Connections and Package Marking
passivation assure rugged, reliable devices.
Surface Mount Package SOURCE DRAIN
36x
SOT-363 (SC-70) SOURCE SOURCE
GATE SOURCE
Note: Top View. Package marking provides orientation and

identification.
“ 36 “ = Device code
ATF-36163 Pin Conn
“ x “ = Data code character
ATF-36163 Pkg Attention: Observe precautions for

Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Absolute Thermal Resistance:
Symbol Parameter Units Maximum θch-c = 160°C/W
Note:
VDS Drain - Source Voltage V +3 1. Operation of this device above any one of
VGS Gate - Source Voltage V -3 these parameters may cause permanent
damage.
VGD Gate Drain Voltage V -3.5
ID Drain Current mA Idss
PT Total Power Dissipation mW 180
Pin max RF Input Power dBm +10
TCH Channel Temperature °C 150
ATF-36163 Electrical Specifications TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure[1] f =12.0 GHz dB 1.2 1.4[1]
G Gain at NF[1] f = 12.0 GHz dB 9 10
gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 60
Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 40
Vp 10% Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15
BVGDO Gate Drain Breakdown Voltage IG = 30 µA V -3.5
Note:
1. Measured in a test circuit tuned for a typical device.
ATF-36163 Typical Parameters TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
Fmin Minimum Noise Figure (Γsource = Γopt) f = 4 GHz dB 0.6
f = 12 GHz dB 1.0
Ga Associated Gain f = 4 GHz dB 15.8
f = 12 GHz dB 9.4
Gmax Maximum Available Gain[1] f = 4 GHz dB 17.2
f = 12 GHz dB 10.9
P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
under the power matched condition f = 12 GHz dBm 5
VGS Gate to Source Voltage for IDS = 15 mA VDS = 2.0 V V -0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.

ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11 S21 S12 S22 K Gmax[1]
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. — dB
0.5 0.99 -11 12.85 4.39 168 -37.72 0.01 79 0.51 -9 0.11 25.24
1 0.98 -22 12.70 4.31 158 -31.70 0.03 71 0.50 -18 0.17 22.26
2 0.96 -42 12.48 4.21 138 -26.02 0.05 55 0.48 -36 0.24 19.28
3 0.93 -61 12.37 4.15 118 -22.73 0.07 40 0.45 -53 0.33 17.56
4 0.87 -83 12.30 4.12 97 -20.45 0.10 23 0.40 -71 0.43 16.38
5 0.81 -106 12.16 4.06 76 -18.71 0.12 6 0.34 -92 0.51 15.43
6 0.75 -131 11.94 3.95 55 -17.52 0.13 -12 0.27 -116 0.58 14.73
7 0.67 -158 11.47 3.75 33 -16.77 0.15 -30 0.18 -144 0.69 14.12
8 0.61 176 11.01 3.55 12 -16.36 0.15 -45 0.10 174 0.79 13.69
9 0.57 143 10.47 3.34 -10 -15.97 0.16 -61 0.12 93 0.85 13.22
10 0.57 108 9.66 3.04 -32 -15.92 0.16 -77 0.22 53 0.91 12.80
11 0.59 76 8.53 2.67 -54 -16.48 0.15 -93 0.33 28 0.99 12.50
12 0.63 50 7.39 2.34 -74 -17.14 0.14 -106 0.41 9 1.07 10.65
13 0.67 26 6.10 2.02 -93 -18.27 0.12 -119 0.49 -8 1.18 9.64
14 0.72 6 4.81 1.74 -111 -19.74 0.10 -129 0.56 -22 1.30 8.99
15 0.78 -11 3.49 1.50 -128 -21.41 0.09 -138 0.63 -33 1.38 8.81
16 0.82 -24 2.20 1.29 -146 -23.10 0.07 -144 0.67 -43 1.44 8.70
17 0.87 -38 0.59 1.07 -164 -25.04 0.06 -151 0.73 -53 1.46 8.79
18 0.90 -52 -1.63 0.83 178 -29.12 0.04 -159 0.78 -65 1.80 8.58
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1. 2.4 24
2.0 20
1.6 16
Fmin (dB)
Ga (dB)
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA 1.2 12
Freq. Fmin Ga Γopt Rn/ZO 0.8 8

GHz dB dB Mag. Ang. -
0.4 4
2 0.48 18.77 0.78 28 0.38
3 0.53 16.75 0.75 41 0.32 0 0
4 0.57 15.17 0.68 55 0.26 0 2 4 6 8 10 12 14 16 18
5 0.61 14.14 0.60 71 0.20 FREQUENCY (GHz)
6 0.66 13.23 0.55 88 0.15 Figure 1. ATF-36163 Minimum Noise Figure and Associated
7 0.71 12.06 0.48 105 0.12 Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
8 0.77 11.22 0.38 119 0.10
24
9 0.83 10.50 0.32 138 0.07
ATF-36163 fig 1
10 0.89 10.02 0.23 170 0.07 20
11 0.97 9.44 0.18 -141 0.09
16
12 1.05 8.92 0.20 -92 0.13 MSG
GAIN (dB)
13 1.14 8.45 0.26 -46 0.21 12

MAG
14 1.24 8.12 0.36 -16 0.32
|S21|2
15 1.37 8.08 0.48 4 0.44 8
16 1.51 8.11 0.59 19 0.60
4
17 1.68 7.97 0.64 34 0.79
18 1.89 7.59 0.70 51 1.15 0
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 2. Maximum Available Gain, Maximum Stable Gain &

Insertion Power Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
ATF-36163 fig 2

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. — dB
0.5 0.99 -12 13.56 4.76 168 -38.42 0.01 79 0.45 -9 0.12 25.82
1 0.98 -22 13.40 4.68 157 -32.40 0.02 71 0.45 -18 0.18 22.86
2 0.96 -43 13.16 4.55 137 -26.56 0.05 56 0.43 -36 0.26 19.87
3 0.92 -63 13.00 4.47 116 -23.22 0.07 40 0.40 -52 0.35 18.13
4 0.86 -85 12.87 4.40 96 -21.01 0.09 24 0.35 -70 0.46 16.94
5 0.80 -108 12.68 4.30 75 -19.25 0.11 7 0.28 -92 0.55 15.98
6 0.74 -133 12.38 4.16 53 -18.13 0.12 -11 0.21 -116 0.62 15.25
7 0.66 -160 11.85 3.91 31 -17.39 0.14 -28 0.13 -146 0.74 14.62
8 0.59 173 11.33 3.68 11 -16.95 0.14 -42 0.06 156 0.84 14.14
9 0.56 141 10.74 3.44 -11 -16.54 0.15 -58 0.12 73 0.90 13.63
10 0.56 106 9.89 3.12 -33 -16.42 0.15 -73 0.23 44 0.95 13.16
11 0.59 74 8.74 2.74 -54 -16.83 0.14 -88 0.34 23 1.03 11.78
12 0.63 49 7.59 2.40 -74 -17.39 0.14 -102 0.42 6 1.10 10.62
13 0.68 25 6.29 2.06 -93 -18.42 0.12 -115 0.50 -10 1.19 9.72
14 0.73 5 5.01 1.78 -110 -19.74 0.10 -124 0.57 -23 1.29 9.15
15 0.79 -12 3.70 1.53 -127 -21.31 0.09 -133 0.64 -34 1.35 8.99
16 0.83 -25 2.43 1.32 -144 -22.85 0.07 -139 0.68 -44 1.39 8.93
17 0.87 -38 0.84 1.10 -163 -24.73 0.06 -148 0.73 -54 1.39 9.06
18 0.91 -53 -1.33 0.86 180 -28.87 0.04 -155 0.78 -66 1.67 8.92
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
2.4 24
2.0 20
1.6 16
Fmin (dB)
Ga (dB)
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 15 mA 1.2 12
Freq. Fmin Ga Γopt Rn/ZO 0.8 8

0.4 4
2 0.49 18.87 0.84 28 0.38
3 0.54 17.20 0.74 42 0.31 0 0
0 2 4 6 8 10 12 14 16 18
4 0.58 15.75 0.66 57 0.25
FREQUENCY (GHz)
5 0.63 14.49 0.59 72 0.19
8 0.79 11.54 0.37 121 0.09 24
9 0.85 10.82 0.30 140 0.08
20 ATF-36163 fig 3
10 0.91 10.32 0.21 174 0.08
11 0.99 9.73 0.17 -133 0.10 16
MSG
12 1.07 9.22 0.20 -83 0.14
GAIN (dB)
13 1.17 8.68 0.26 -40 0.22 12

MAG
14 1.27 8.41 0.38 -12 0.34 |S21|2
8
15 1.40 8.36 0.49 7 0.46
16 1.54 8.37 0.60 21 0.64 4
17 1.72 8.10 0.62 35 0.85
18 1.93 8.00 0.71 52 1.18 0
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

ATF-36163 fig 4

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. – dB
0.5 0.99 -11 13.06 4.50 168 -37.72 0.01 79 0.55 -9 0.11 25.46
1 0.99 -22 12.90 4.42 158 -32.04 0.03 71 0.55 -18 0.16 22.46
2 0.96 -42 12.69 4.31 138 -26.38 0.05 56 0.53 -35 0.24 19.50
3 0.93 -62 12.57 4.25 118 -22.97 0.07 40 0.50 -52 0.32 17.77
4 0.87 -83 12.51 4.22 97 -20.72 0.09 23 0.44 -70 0.42 16.61
5 0.81 -106 12.38 4.16 76 -18.94 0.11 6 0.38 -90 0.51 15.67
6 0.75 -131 12.15 4.05 55 -17.79 0.13 -12 0.31 -112 0.58 14.98
7 0.67 -157 11.70 3.84 33 -17.08 0.14 -30 0.21 -137 0.69 14.38
8 0.60 176 11.25 3.65 13 -16.65 0.15 -44 0.13 -168 0.79 13.96
9 0.57 144 10.73 3.44 -10 -16.25 0.15 -60 0.10 115 0.85 13.50
10 0.56 109 9.95 3.14 -32 -16.25 0.15 -76 0.18 61 0.91 13.10
11 0.58 77 8.86 2.77 -53 -16.77 0.15 -91 0.29 32 1.00 12.52
12 0.62 50 7.75 2.44 -73 -17.39 0.14 -104 0.37 12 1.08 10.82
13 0.67 26 6.49 2.11 -93 -18.56 0.12 -117 0.46 -5 1.19 9.85
14 0.72 6 5.24 1.83 -110 -19.91 0.10 -126 0.53 -19 1.31 9.24
15 0.78 -10 3.96 1.58 -128 -21.51 0.08 -134 0.60 -30 1.38 9.07
16 0.82 -24 2.68 1.36 -146 -23.10 0.07 -139 0.65 -40 1.42 9.03
17 0.87 -37 1.08 1.13 -165 -24.88 0.06 -147 0.71 -50 1.38 9.28
18 0.91 -52 -1.16 0.88 177 -28.64 0.04 -153 0.78 -63 1.63 9.06
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
2.4 24
2.0 20
ATF-36163 Typical Noise Parameters 1.6 16
Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 10 mA

Fmin (dB)
Ga (dB)
1.2 12
Freq. Fmin Ga Γopt Rn/ZO
0.8 8
2 0.46 18.60 0.84 28 0.38 0.4 4
3 0.50 16.75 0.76 41 0.31
0 0
4 0.54 15.55 0.67 56 0.25 0 2 4 6 8 10 12 14 16 18
5 0.59 14.20 0.61 70 0.20 FREQUENCY (GHz)
8 0.74 11.35 0.39 118 0.10
24
9 0.80 10.59 0.33 135 0.07
10 0.86 10.11 0.23 165 0.07 20
ATF-36163 fig 5
11 0.94 9.57 0.17 -145 0.09
12 1.02 9.08 0.18 -93 0.12 16
MSG
GAIN (dB)
13 1.11 8.59 0.24 -47 0.19

12
14 1.22 8.30 0.34 -16 0.30 MAG
15 1.35 8.29 0.47 5 0.42 |S21|2
8
16 1.51 8.32 0.58 19 0.57
17 1.69 8.07 0.60 34 0.76 4
18 1.92 7.68 0.66 50 1.10
0
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

ATF-36163 fig 6

ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2 V, ID = 15 mA
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. – dB
0.5 0.99 -12 13.85 4.93 168 -38.42 0.01 79 0.51 -9 0.12 26.10
1 0.98 -22 13.70 4.84 157 -32.40 0.02 71 0.50 -18 0.17 23.11
2 0.96 -43 13.45 4.70 137 -26.74 0.05 56 0.48 -35 0.26 20.13
3 0.92 -63 13.29 4.62 117 -23.48 0.07 40 0.45 -52 0.35 18.40
4 0.86 -85 13.16 4.55 96 -21.31 0.09 24 0.40 -69 0.46 17.22
5 0.79 -108 12.96 4.45 75 -19.58 0.11 7 0.33 -90 0.55 16.26
6 0.73 -133 12.67 4.30 53 -18.42 0.12 -10 0.26 -112 0.62 15.54
7 0.65 -160 12.13 4.04 32 -17.72 0.13 -28 0.17 -136 0.75 14.93
8 0.59 173 11.63 3.81 11 -17.27 0.14 -42 0.09 -171 0.84 14.46
9 0.55 141 11.06 3.57 -11 -16.83 0.14 -57 0.09 93 0.90 13.95
10 0.56 107 10.23 3.25 -32 -16.77 0.15 -72 0.19 51 0.96 13.50
11 0.58 75 9.11 2.86 -53 -17.14 0.14 -87 0.30 27 1.04 11.93
12 0.63 49 8.00 2.51 -73 -17.72 0.13 -99 0.38 9 1.11 10.85
13 0.68 26 6.75 2.17 -92 -18.71 0.12 -112 0.47 -7 1.20 10.00
14 0.73 6 5.49 1.88 -110 -20.00 0.10 -121 0.54 -20 1.30 9.45
15 0.78 -11 4.22 1.63 -127 -21.41 0.09 -129 0.61 -31 1.35 9.30
16 0.83 -24 2.99 1.41 -145 -22.73 0.07 -135 0.66 -41 1.36 9.31
17 0.88 -38 1.42 1.18 -164 -24.44 0.06 -143 0.72 -51 1.31 9.56
18 0.91 -52 -0.79 0.91 178 -27.96 0.04 -149 0.78 -63 1.50 9.44
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1. 2.4 24
2.0 20
1.6 16
Fmin (dB)
Ga (dB)
1.2 12
Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 15 mA
0.8 8
Freq. Fmin Ga Γopt Rn/ZO
GHz dB dB Mag. Ang. - 0.4 4
2 0.48 18.97 0.83 28 0.37 0 0

3 0.52 17.27 0.74 41 0.31 0 2 4 6 8 10 12 14 16 18
4 0.56 15.75 0.67 56 0.25 FREQUENCY (GHz)
6 0.65 13.68 0.55 89 0.15 Gain vs. Frequency for VDS = 2 V, ID = 15 mA.
7 0.70 12.47 0.46 104 0.11
24
8 0.76 11.66 0.37 118 0.09
ATF-36163 fig 7
9 0.82 10.94 0.31 136 0.08 20
10 0.88 10.44 0.21 168 0.07
11 0.95 9.88 0.15 -137 0.09 16 MSG
GAIN (dB)
12 1.03 9.38 0.18 -85 0.13

12
13 1.12 8.90 0.25 -41 0.21 MAG
|S21|2
14 1.23 8.63 0.36 -13 0.32 8
15 1.35 8.59 0.48 7 0.44
16 1.49 8.63 0.58 20 0.60 4
17 1.65 8.68 0.65 34 0.79 0

18 1.86 8.32 0.70 51 1.10 0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 8. Maximum Available Gain, Maximum Stable Gain

& Insertion Power Gain vs. Frequency for VDS = 2 V, ID = 15 mA.
ATF-36163 fig 8

ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 0 V, VGS = 0 V
Freq. S11 S21 S12 S22
0.5 0.998 -10 -46.02 0.01 80 -46.02 0.01 86 0.703 170
1 0.993 -20 -39.17 0.01 81 -39.17 0.01 83 0.701 160
2 0.99 -37 -32.77 0.02 75 -32.77 0.02 76 0.70 139
3 0.98 -55 -28.64 0.04 67 -28.64 0.04 68 0.71 119
4 0.96 -74 -25.35 0.05 56 -25.19 0.06 57 0.73 99
5 0.94 -95 -22.62 0.07 42 -22.50 0.08 42 0.74 81
6 0.92 -118 -20.45 0.10 27 -20.45 0.10 27 0.75 63
7 0.89 -142 -18.79 0.12 11 -18.71 0.12 11 0.77 46
8 0.86 -168 -17.02 0.14 -6 -17.02 0.14 -5 0.78 30
9 0.84 162 -15.70 0.16 -24 -15.70 0.16 -24 0.81 16
10 0.83 128 -14.85 0.18 -44 -14.85 0.18 -44 0.83 3
11 0.83 94 -14.66 0.19 -64 -14.66 0.19 -64 0.84 -10
12 0.85 64 -14.85 0.18 -83 -14.85 0.18 -83 0.85 -22
13 0.86 36 -15.76 0.16 -101 -15.76 0.16 -101 0.87 -34
14 0.87 12 -17.14 0.14 -116 -17.08 0.14 -115 0.89 -44
15 0.90 -8 -18.71 0.12 -129 -18.71 0.12 -129 0.89 -53
16 0.93 -24 -20.45 0.10 -140 -20.45 0.10 -140 0.90 -62
17 0.93 -39 -23.35 0.07 -154 -23.10 0.07 -152 0.90 -71
18 0.93 -53 -27.96 0.04 -161 -28.18 0.04 -161 0.90 -81
ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2.0 V, VGS = -1.5 V

Freq. S11 S21 S12 S22
0.5 0.97 -8 -34.89 0.02 82 -34.89 0.02 81 0.999 -7
1 0.98 -16 -28.87 0.04 74 -28.87 0.04 73 0.998 -14
2 0.99 -30 -22.85 0.07 59 -22.97 0.07 59 0.995 -29
3 0.98 -43 -19.33 0.11 44 -19.33 0.11 44 0.98 -43
4 0.97 -57 -16.71 0.15 29 -16.71 0.15 30 0.97 -57
5 0.96 -72 -14.42 0.19 14 -14.47 0.19 14 0.95 -74
6 0.94 -87 -12.62 0.23 -2 -12.65 0.23 -2 0.94 -91
7 0.92 -103 -10.90 0.29 -20 -10.96 0.28 -20 0.92 -107
8 0.89 -119 -9.60 0.33 -37 -9.63 0.33 -37 0.89 -125
9 0.85 -136 -8.09 0.39 -56 -8.09 0.39 -56 0.83 -148
10 0.79 -158 -6.73 0.46 -79 -6.73 0.46 -79 0.79 -174
11 0.74 177 -5.85 0.51 -106 -5.87 0.51 -106 0.75 156
12 0.72 149 -5.71 0.52 -136 -5.71 0.52 -136 0.73 123
13 0.71 114 -6.54 0.47 -170 -6.52 0.47 -170 0.74 86
14 0.75 74 -8.95 0.36 155 -8.92 0.36 156 0.79 50
15 0.82 35 -12.80 0.23 123 -12.69 0.23 123 0.85 18
16 0.89 5 -18.49 0.12 94 -18.20 0.12 95 0.90 -8
17 0.91 -21 -24.88 0.06 79 -24.44 0.06 84 0.91 -30
18 0.92 -42 -27.54 0.04 70 -27.96 0.04 69 0.90 -50

1.9 dB
1.4 dB
1.3 dB
1.2 dB
1.1 dB
9.5 dB
10.5 dB
11.5 dB
Figure 9. Smith Chart with Noise Figure and Available Gain Circles at
12 GHz, VDS = 1.5 V, ID = 10 mA.
Phase Reference Planes SOT-363 PCB Layout

The positions of theATF-36163
referencefigplanes
9 used to measure S- A PCB pad layout for the miniature SOT-363 (SC-70)
Parameters and to specify Γopt for the Noise Parameters package used by the ATF-36163 is shown in Figure
are shown in Figure 10. As seen in the illustration, the 11 (dimensions are in inches). This layout provides
reference planes are located at the extremities of the ample allowance for package placement by automated
package leads. assembly equipment. The layout is shown with a nominal
SOT-363 package footprint superimposed on the PCB.
REFERENCE
PLANES pads. 0.026
TEST CIRCUIT
0.079
Figure 10. Reference Planes.
0.039
MGA-86563 fig 11
0.018
Dimensions in inches.
Figure 11. Recommended PCB Pad Layout for Avago’s SC70 6L/SOT-363
Products (Dimensions in Inches).

Package Dimensions
SC-70 6L/SOT-363
HE E
Q1
A2 A
A1 c
b L
DIMENSIONS (mm)
SYMBOL MIN. MAX.

E 1.15 1.35
D 1.80 2.25
HE 1.80 2.40
A 0.80 1.10
A2 0.80 1.00 NOTES:
1. All dimensions are in mm.
A1 0.00 0.10
2. Dimensions are inclusive of plating.
Q1 0.10 0.40
3. Dimensions are exclusive of mold flash & metal burr.
e 0.650 BCS 4. All specifications comply to EIAJ SC70.
b 0.15 0.30 5. Die is facing up for mold and facing down for trim/form,
c 0.10 0.20 ie: reverse trim/form.
L 0.10 0.30 6. Package surface to be mirror finish.

No. of
Part Number Devices Container
ATF-36163-TR1G 3000 7” Reel
ATF-36163-TR2G 10000 13” Reel
ATF-36163-BLKG 100 antistatic bag

Device Orientation
REEL TOP VIEW END VIEW
4 mm
8 mm
36 36 36 36
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation For Outline 63

P D ATF-36163
P2 Tape – Device Orientation
P0
ATF-36163 Device Orientation E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10° MAX. K0 10° MAX.
A0 B0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

CAVITY LENGTH A0 2.40 ± 0.10 0.094 ± 0.004
WIDTH B0 2.40 ± 0.10 0.094 ± 0.004
DEPTH K0 1.20 ± 0.10 0.047 ± 0.004
PITCH P 4.00 ± 0.10 0.157 ± 0.004
PERFORATION DIAMETER D 1.55 ± 0.10 0.061 + 0.002
PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004
CARRIER TAPE WIDTH W 8.00 + 0.30 - 0.10 0.315 + 0.012

THICKNESS t1 0.254 ± 0.02 0.0100 ± 0.0008
COVER TAPE WIDTH C 5.40 ± 0.10 0.205 + 0.004
(WIDTH DIRECTION)
(LENGTH DIRECTION)
AV02-1441EN - July 29, 2008
ATF-50189
Enhancement Mode [1] Pseudomorphic HEMT in
SOT 89 Package
Data Sheet
Avago Technologies’s ATF-50189 is a high linearity, • High Linearity and P1dB
medium power, low noise E-pHEMT FET packaged in
• Low Noise Figure
a low cost surface mount SOT89[3] package. The com-
bination of low noise figure and high output IP3 at • Excellent uniformity in product specifications
the same bias point makes it ideal for receiver and
• SOT 89 standard package
transmitter application. Its operating frequency range
is from 400 MHz to 3.9 GHz. • Point MTTF > 300 years[2]
• MSL-1 and lead-free
The ATF-50189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and • Tape-and-Reel packaging option available
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require high linearity and
power. All devices are 100% RF and DC tested. Specifications
2 GH, 4.5V, 280 mA (Typ.)
Notes:
1. Enhancement mode technology employs a single positive Vgs, • 45 dBm Output IP3
eliminating the need of negative gate voltage associated with
conventional depletion mode devices. • 29 dBm Output Power at 1dB gain compression
2. Refer to reliability datasheet for detailed MTTF data • 1.1 dB Noise Figure
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power. • 15.5 dB Gain
• 62% PAE at P1dB
Pin Connections and Package Marking • LFOM[4] 14 dB
Applications
OGX • Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS
G S D
applications
Top View • General purpose discrete E-pHEMT for other high linearity
applications
Attention:
Observe precautions for handling electrostatic
D S G sensitive devices.
Bottom View
Notes: ESD Machine Model (Class A)

Package marking provides orientation and ESD Human Body Model (Class 1C)
identification:
Refer to Avago Application Note A004R: Electrostatic Discharge
“0G” = Device Code Damage and Control.
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Absolute Thermal Resistance[2,4]
Symbol Parameter Units Maximum θch_b = 29°C/W
VDS Drain–Source Voltage[2] V 7 Notes:

1. Operation of this device above any one of
VGS Gate–Source Voltage[2] V -5 to 0.8
these parameters may cause permanent
VGD Gate Drain Voltage[2] V -5 to 1 damage.
2. Assumes DC quiescent conditions.
IDS Drain Current[2] A 1
3. Board (package belly) temperature TB is 25°C.
IGS Gate Current mA 12 Derate 35 mW/°C for TB > 85°C.
4. Channel-to-board thermal resistance
Pdiss Total Power Dissipation[3] W 2.25
measured using 150°C Liquid Crystal
Pin RF Input Power dBm 30 Measurement method.

ATF-50189 Electrical Specifications

TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.37 0.53 0.72
Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V — 0.38 —
Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA — 4.1 —
Gm Transconductance Vds = 4.5V, Gm = ∆Ids/∆Vgs; mmho 175 2294 —
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA — 13.8 60
NF Noise Figure [1] f = 2 GHz dB — 1.1 —
f = 900 MHz dB — 1.0 —
G Gain [1] f = 2 GHz dB 14 15.5 17
f = 900 MHz dB — 21.5 —
OIP3 Output 3rd Order Intercept Point [1,2] f = 2 GHz dBm 43 45 —
f = 900 MHz dBm — 44 —
P1dB Output Power at 1dB Compression Point [1] f = 2 GHz dBm 27 29 —
f = 900 MHz dBm — 28.5 —
PAE Power Added Efficiency [1] at P1dB f = 2 GHz % 45 62 —
f = 900 MHz % — 49 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — 60.0 —
Power Ratio [1,3] Offset BW = 10 MHz dBc — 67.8 —
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.
2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2
Input Output
Matching Matching
Circuit Circuit
Input DUT Output
Γ_mag=0.80 Γ_mag=0.62
Γ_ang=-136.6° Γ_ang=-163°
(0.9 dB loss) (0.9 dB loss)
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]

150 180
Stdev=0.37 Stdev=0.20
150
120
120
FREQUENCY
FREQUENCY
90
–3 Std +3 Std –3 Std +3 Std
90
60
60
30
30
0 0
43 44 45 46 47 28 28.5 29 29.5 30
OIP3 (dBm) P1dB (dBm)
Figure 2. OIP3 @ 2 GHz, 4.5V/280 mA. Figure 3. P1dB @ 2 GHz, 4.5V/280 mA.
LSL = 43.0, Nominal = 45.4 LSL = 27.0, Nominal = 29.0
300 150
250
120
200
FREQUENCY
FREQUENCY
90
150
60
100
30
50
0 0
14 14.5 15 15.5 16 16.5 17 54 58 62 66 70
GAIN (dB) PAE (%)
Figure 4. Gain @ 2 GHz, 4.5V/200 mA. Figure 5. PAE at P1dB @ 2 GHz, 4.5V/200 mA.
LSL = 14.0, Nominal = 15.5, USL = 17.0 LSL = 45.0, Nominal = 62.0
Notes:
1. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
280 mA quiesent bias.
Typical Gammas at Optimum OIP3 [1]
Optimum OIP3
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang (deg) Mag Ang (deg) (dBm) (dB) (dBm) (%)
0.45 0.47 121.7 0.76 -175.1 41.0 22.0 27.5 39.0
0.9 0.81 -157.5 0.72 -178.1 44.2 21.6 28.3 49.2
1.8 0.82 -110.4 0.62 -135.1 46.5 16.0 28.7 61.3
2 0.85 -106.4 0.64 -127.4 46.2 15.1 29.0 63.0
2.4 0.82 -88.8 0.67 -113.6 45.6 13.0 28.9 55.0
3.5 0.77 -49.6 0.59 -79.5 44.0 8.6 26.9 35.0
Typical Gammas at Optimum P1dB [1]
Optimum P1dB
0.45 0.52 151.2 0.71 -177.5 39.8 23.9 28.5 44.8
0.9 0.79 -160.1 0.67 -158.3 42.8 20.1 30.4 56
1.8 0.83 -112.5 0.72 -131.2 44.2 15.9 30.3 60.3
2 0.82 -102.1 0.69 -117.5 44.8 14.9 30.2 58.6
2.4 0.78 -91.2 0.77 -105.3 44.44 12.5 30.2 54.1
3.5 0.78 -49.7 0.72 -74.6 43.7 8.7 27.3 32
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
Typical IV Curve
1000
Vgs=0.8V
900
800
Vgs=0.7V
700
600
Ids (mA)
500
Vgs=0.6V
400
Vgs=0.54V
300
200 Vgs=0.5V
100
Vgs=0.4V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Vds (V)
Figure 6. Typical IV curve.
4
ATF-50189 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 280 mA, Operating Frequency = 2 GHz.
48 32
46
44 30
42
P1dB (dBm)
OIP3 (dBm)
28
40
38
26
36
3.5V 3.5V
34 4.5V 24 4.5V
5.5V 5.5V
32
30 22
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 7. OIP3 vs. Ids and Vds at 2 GHz. Figure 8. P1dB vs. Idsq and Vds at 2 GHz.
15.4 70
15.2 65
60
15
55
GAIN (dB)
PAE (%)
14.8
50
14.6
45
14.4 3.5V 3.5V
40
4.5V 4.5V
14.2 5.5V 5.5V
35
14 30
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 9. Gain vs. Ids and Vds at 2 GHz. Figure 10. PAE vs. Idsq and Vds at 2 GHz.
5
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 280 mA, Operating Frequency = 900 MHz.
50 32
46 30
42
28
P1dB (dBm)
OIP3 (dBm)
38
26
34
24
30 3.5V 3.5V
4.5V 4.5V
26 5.5V 22 5.5V
22 20
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 11. OIP3 vs. Ids and Vds at 900 MHz. Figure 12. P1dB vs. Idsq and Vds at 900 MHz.
22.2 60
55
22
50
21.8 45
GAIN (dB)
40
PAE (%)
21.6
35
21.4 30
21.2 25 3.5V
3.5V
4.5V 20 4.5V
5.5V 5.5V
21
15
20.8 10
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 13. Gain vs. Ids and Vds at 900 MHz. Figure 14. PAE vs. Idsq and Vds at 900 MHz.
6
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 280 mA, Over Temperature and Frequency
56 32
52
30
48
28
P1dB (dBm)
44
OIP3 (dBm)
40 26
36
24
-40°C -40°C
32
25°C 25°C
85°C 22 85°C
28
24 20
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 15. OIP3 vs. Temperature and Figure 16. P1dB vs. Temperature and
Frequency at optimum OIP3. Frequency at optimum OIP3.
26 70
22 60
50
18
GAIN (dB)
PAE (%)
40
14
30
10
-40°C 20 -40°C
25°C 25°C
6 85°C 10 85°C
2 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 17. Gain vs. Temperature and Figure 18. PAE vs. Temperature and
Frequency at optimum OIP3. Frequency at optimum OIP3.
7
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 280 mA, Operating Frequency = 2 GHz.
46 34
44
32
42
P1dB (dBm)
40
OIP3 (dBm)
30
38
36 28
3.5V 3.5V
34
4.5V 26 4.5V
5.5V 5.5V
32
30 24
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 19. OIP3 vs. Ids and Vds at 2 GHz. Figure 20. P1dB vs. Idsq and Vds at 2 GHz.
15.4 65
15.2
60
15
14.8 55
GAIN (dB)
PAE (%)
14.6
50
14.4
14.2 45
3.5V 3.5V
14 4.5V 4.5V
5.5V 40 5.5V
13.8
13.6 35
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 21. Gain vs. Ids and Vds at 2 GHz. Figure 22. PAE vs. Idsq and Vds at 2 GHz.
8
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 280 mA, Operating Frequency = 900 MHz.
46 34
44
42 32
40
P1dB (dBm)
OIP3 (dBm)
30
38
36
28
34
3.5V 3.5V
32 4.5V 26 4.5V
5.5V 5.5V
30
28 24
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 23. OIP3 vs. Ids and Vds at 900 MHz. Figure 24. P1dB vs. Idsq and Vds at 900 MHz.
21 70
20.8 65
20.6
60
20.4
55
GAIN (dB)
20.2
PAE (%)
20 50
19.8
45
19.6 3.5V 3.5V
40
19.4 4.5V 4.5V
5.5V 5.5V
19.2 35
19 30
120 160 200 240 280 320 360 400 440 120 160 200 240 280 320 360 400 440
Ids (mA) Idsq (mA)
Figure 25. Gain vs. Ids and Vds at 900 MHz. Figure 26. PAE vs. Idsq and Vds at 900 MHz.
9
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 280 mA, Over Temperature and Frequency
52 34
48 32
44
30
P1dB (dBm)
OIP3 (dBm)
40
28
36
26
32 -40°C -40°C
25°C 25°C
28 85°C 24 85°C
24 22
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 27. OIP3 vs. Temperature and Figure 28. P1dB vs. Temperature and
Frequency at optimum P1dB. Frequency at optimum P1dB.
26 70
22 60
50
18
GAIN (dB)
PAE (%)
40
14
30
10
-40°C 20 -40°C
25°C 25°C
6 85°C 10 85°C
2 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 29. Gain vs. Temperature and Figure 30. PAE vs. Temperature and
Frequency at optimum P1dB. Frequency at optimum P1dB.
10
ATF-50189 Typical Scattering Parameters at 25°C, VDS = 4.5V, IDS = 280 mA
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.923 -133.2 31.0 35.531 110.9 -37.7 0.013 31.7 0.692 -163.7 34.4
0.2 0.919 -158.7 25.6 19.023 97.1 -37.1 0.014 25.2 0.738 -173.2 31.3
0.3 0.919 -169.4 22.2 12.872 90.4 -36.5 0.015 24.9 0.749 -177.6 29.3
0.4 0.917 -176.1 19.7 9.705 85.7 -35.9 0.016 26.3 0.752 179.3 27.8
0.5 0.916 178.5 17.7 7.687 84.4 -35.4 0.017 30.4 0.756 175.7 26.6
0.6 0.916 174.5 16.2 6.438 81.7 -34.9 0.018 32.6 0.755 173.5 25.5
0.7 0.917 170.9 14.9 5.582 79.2 -34.4 0.019 34.5 0.755 171.4 24.7
0.8 0.918 167.5 13.9 4.939 76.5 -33.6 0.021 35.9 0.753 169.4 23.7
0.9 0.920 164.1 12.9 4.433 73.8 -33.2 0.022 36.8 0.755 167.5 23.0
1.0 0.921 161.0 12.1 4.026 70.9 -32.4 0.024 37.1 0.753 165.6 22.2
1.1 0.922 159.6 11.7 3.853 69.5 -32.0 0.025 37.1 0.753 164.7 21.9
1.2 0.922 158.1 11.3 3.679 68.1 -32.0 0.025 37.1 0.753 163.7 21.7
1.3 0.922 155.4 10.6 3.378 65.2 -31.4 0.027 36.7 0.751 162.0 21.0
1.4 0.919 152.6 9.9 3.127 62.3 -31.1 0.028 36.3 0.753 160.2 20.3
1.5 0.918 150.2 9.3 2.910 59.6 -30.5 0.030 35.8 0.753 158.4 19.2
1.6 0.920 147.5 8.7 2.717 56.7 -30.2 0.031 35.0 0.753 156.7 18.5
1.7 0.919 144.6 8.1 2.547 53.9 -29.6 0.033 34.1 0.753 154.9 17.8
1.8 0.920 142.0 7.6 2.392 51.2 -29.4 0.034 33.2 0.753 153.3 17.2
1.9 0.918 139.6 7.0 2.251 48.6 -29.1 0.035 32.1 0.752 151.7 16.5
2.0 0.919 137.1 6.5 2.123 45.9 -28.6 0.037 31.0 0.752 150.1 16.0
2.1 0.917 134.6 6.1 2.009 43.3 -28.4 0.038 29.7 0.752 148.3 15.4
2.2 0.918 132.0 5.6 1.908 40.6 -28.2 0.039 28.6 0.752 146.8 15.0
2.3 0.915 129.8 5.1 1.800 37.9 -28.0 0.040 27.4 0.755 145.2 14.4
2.4 0.912 127.1 4.7 1.721 35.6 -27.7 0.041 26.0 0.750 143.9 13.9
2.5 0.908 124.9 4.3 1.647 33.4 -27.3 0.043 25.0 0.768 142.3 13.4
3 0.908 112.7 2.3 1.304 21.1 -26.6 0.047 18.3 0.766 135.5 11.5
3.5 0.912 99.5 0.5 1.062 11.3 -26.0 0.050 12.6 0.773 131.8 10.0
4 0.923 92.6 -0.7 0.921 1.5 -25.8 0.051 7.1 0.779 123.3 9.4
5 0.922 78.2 -3.5 0.669 -19.8 -25.2 0.055 -5.3 0.793 102.9 7.0
6 0.921 61.3 -5.8 0.515 -41.5 -25.7 0.052 -22.4 0.806 84.7 5.2
7 0.921 41.2 -8.2 0.389 -59.6 -26.0 0.050 -39.5 0.809 69.9 3.2
8 0.922 24.3 -10.2 0.308 -79.9 -26.7 0.046 -55.9 0.844 54.6 2.1
9 0.923 11.8 -12.4 0.239 -100.5 -28.4 0.038 -73.5 0.882 37.0 1.4
10 0.922 10.8 -14.6 0.187 -109.4 -31.1 0.028 -81.6 0.896 27.1 0.1
11 0.921 0.3 -16.0 0.158 -124.9 -34.4 0.019 -108.3 0.872 20.3 -1.8
12 0.924 -8.0 -17.7 0.131 -138.0 -46.0 0.005 -147.3 0.916 7.0 -1.3
13 0.923 -12.1 -19.2 0.110 -153.4 -40.0 0.010 71.0 0.877 -1.1 -4.4
14 0.922 -20.6 -21.0 0.089 -168.9 -37.1 0.014 30.2 0.882 -7.5 -6.3
15 0.925 -23.6 -21.4 0.085 177.8 -39.2 0.011 -4.9 0.865 -19.2 -7.2
16 0.925 -23.1 -21.1 0.088 165.9 -37.7 0.013 -8.8 0.864 -26.2 -6.9
17 0.924 -24.3 -18.9 0.114 155.2 -41.9 0.008 -173.5 0.856 -33.6 -4.7
18 0.924 -32.5 -17.1 0.140 133.4 -35.4 0.017 161.7 0.835 -42.5 -3.2
40
30 MSG
Notes:
(dB)
20 1. S parameter is measured on a microstrip line

2
MSG/MAG & |S21|
made on 0.025 inch thick alumina carrier. The

10 MAG input reference plane is at the end of the gate
lead. The output reference plane is at the end
0
of the drain lead.
S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 31. MSG/MAG & |S21|2 vs Frequency

at 4.5V/280 mA.
11
0.1 0.924 -131.8 31.0 35.392 111.6 -37.1 0.014 31.1 0.682 -161.3 34.0
0.2 0.918 -157.9 25.6 19.011 97.5 -35.9 0.016 23.7 0.731 -172.0 30.7
0.3 0.918 -168.9 22.2 12.87 90.7 -35.9 0.016 23.0 0.743 -176.8 29.1
0.4 0.917 -175.7 19.7 9.706 85.9 -35.4 0.017 23.9 0.746 -180.0 27.6
0.5 0.914 178.9 17.7 7.686 84.4 -34.9 0.018 27.7 0.749 176.2 26.3
0.6 0.914 174.8 16.2 6.438 81.8 -34.4 0.019 29.8 0.749 173.9 25.3
0.7 0.916 171.1 14.9 5.583 79.2 -34.0 0.020 31.7 0.749 171.8 24.5
0.8 0.917 167.7 13.9 4.94 76.5 -33.2 0.022 32.9 0.747 169.8 23.5
0.9 0.918 164.3 12.9 4.433 73.7 -32.8 0.023 33.8 0.748 167.8 22.8
1 0.918 161.2 12.1 4.025 70.9 -32.0 0.025 34.2 0.747 165.9 22.1
1.1 0.919 159.8 11.7 3.852 69.5 -31.7 0.026 34.2 0.747 165.0 21.7
1.2 0.920 158.3 11.3 3.679 68.0 -31.7 0.026 34.2 0.747 164.0 21.5
1.3 0.920 155.6 10.6 3.377 65.1 -31.4 0.027 34.0 0.746 162.3 21.0
1.4 0.917 152.7 9.9 3.126 62.2 -30.8 0.029 33.6 0.747 160.5 20.3
1.5 0.916 152.3 9.3 2.911 59.6 -30.5 0.030 33.3 0.747 158.7 19.9
1.6 0.920 147.7 8.7 2.718 56.6 -29.9 0.032 32.5 0.747 156.9 19.3
1.7 0.919 144.8 8.1 2.547 53.7 -29.6 0.033 31.7 0.747 155.1 18.1
1.8 0.918 142.2 7.6 2.392 51.1 -29.1 0.035 30.9 0.747 153.6 17.3
1.9 0.917 139.8 7.0 2.251 48.4 -28.9 0.036 29.9 0.747 151.9 16.6
2 0.918 137.2 6.5 2.122 45.7 -28.6 0.037 28.8 0.746 150.3 16.1
2.1 0.916 134.7 6.1 2.008 43.1 -28.4 0.038 27.7 0.747 148.6 15.5
2.2 0.917 132.1 5.6 1.907 40.4 -28.2 0.039 26.6 0.746 147.0 15.1
2.3 0.913 129.8 5.2 1.811 37.7 -28.0 0.040 25.3 0.745 145.7 14.4
2.4 0.911 127.2 4.7 1.72 35.3 -27.7 0.041 24.2 0.746 144.2 13.9
2.5 0.907 125.1 4.3 1.645 33.1 -27.3 0.043 23.2 0.762 142.5 13.5
3 0.918 112.7 2.3 1.303 20.9 -26.6 0.047 16.8 0.761 135.8 11.9
3.5 0.912 99.5 0.7 1.08 10.7 -26.0 0.050 12.6 0.798 131.8 10.4
4 0.923 92.6 -0.6 0.93 0.5 -26.0 0.050 6.2 0.799 122.0 9.7
5 0.922 78.2 -3.5 0.67 -20.4 -25.8 0.051 -6.7 0.800 102.3 7.2
6 0.921 61.3 -5.8 0.513 -42.1 -26.5 0.053 -26.9 0.808 84.7 5.3
7 0.921 41.2 -8.3 0.386 -60.0 -26.0 0.050 -40.1 0.809 69.9 3.1
8 0.922 24.3 -10.3 0.305 -80.4 -26.7 0.046 -56.8 0.843 54.8 2.1
9 0.923 11.8 -12.5 0.238 -101.3 -28.4 0.038 -74.6 0.881 37.1 1.3
10 0.922 10.8 -14.8 0.183 -108.5 -31.1 0.028 -82.9 0.895 27.3 -0.1
11 0.921 0.3 -16.0 0.158 -126.0 -34.4 0.019 -110.5 0.872 20.5 -1.7
12 0.924 -8.0 -17.8 0.129 -138.1 -46.0 0.005 -155.4 0.917 7.3 -1.4
13 0.923 -12.1 -19.3 0.109 -152.2 -40.0 0.010 73.6 0.878 -0.8 -4.5
14 0.922 -20.6 -21.3 0.086 -168.0 -37.1 0.014 33.1 0.883 -7.3 -6.6
15 0.925 -23.6 -21.3 0.086 177.1 -39.2 0.011 -0.7 0.865 -19.0 -7.1
16 0.925 -23.1 -21.1 0.088 166.0 -37.1 0.014 -7.2 0.865 -26.0 -6.9
17 0.924 -24.3 -19.1 0.111 154.3 -43.1 0.007 -179.9 0.857 -33.4 -4.9
18 0.924 -32.5 -17.0 0.141 134.0 -35.4 0.017 159.5 0.837 -42.2 -3.0
40
30
Notes:
(dB)
MSG
2
MSG/MAG & |S21|

0
S21 of the drain lead.
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 4.5V/200 mA.
12
0.1 0.935 -134.4 29.1 28.363 110.9 -39.2 0.011 33.4 0.800 -171.2 34.1
0.2 0.932 -159.5 23.6 15.134 97.3 -37.7 0.013 28.3 0.838 -177.3 30.7
0.3 0.932 -170.1 20.2 10.222 90.8 -37.1 0.014 29.1 0.847 179.4 28.6
0.4 0.930 -176.6 17.7 7.696 86.2 -36.5 0.015 30.9 0.849 176.9 27.1
0.5 0.930 178.1 15.7 6.096 85.2 -35.9 0.016 35.4 0.854 174.0 25.8
0.6 0.931 174.2 14.2 5.107 82.8 -35.4 0.017 37.8 0.855 172.0 24.8
0.7 0.933 170.6 12.9 4.429 80.4 -34.4 0.019 39.7 0.855 170.0 23.7
0.8 0.933 167.2 11.9 3.919 77.9 -33.6 0.021 40.8 0.853 168.2 22.7
0.9 0.935 163.9 10.9 3.526 75.3 -33.2 0.022 41.5 0.858 166.3 22.0
1 0.936 160.7 10.1 3.2 72.6 -32.4 0.024 41.6 0.855 164.4 21.2
1.1 0.937 159.3 9.7 3.063 71.3 -32.0 0.025 41.5 0.855 163.4 20.9
1.2 0.938 157.8 9.3 2.925 69.9 -31.7 0.026 41.3 0.855 162.4 20.5
1.3 0.936 155.1 8.6 2.685 67.2 -31.1 0.028 40.8 0.852 160.7 19.8
1.4 0.933 152.3 7.9 2.488 64.4 -30.8 0.029 40.0 0.857 158.9 19.3
1.5 0.933 151.1 7.6 2.401 63.2 -30.5 0.03 39.7 0.857 158.0 19.0
1.6 0.932 149.8 7.3 2.314 61.9 -30.2 0.031 39.3 0.856 157.0 18.7
1.7 0.934 147.2 6.7 2.163 59.1 -29.6 0.033 38.2 0.854 155.2 18.1
1.8 0.934 144.3 6.2 2.032 56.4 -29.4 0.034 37.0 0.855 153.4 17.1
1.9 0.933 141.7 5.6 1.906 53.9 -28.9 0.036 35.8 0.854 151.8 16.4
2 0.932 139.3 5.1 1.794 51.3 -28.6 0.037 34.5 0.853 150.0 15.8
2.1 0.933 136.7 4.6 1.69 48.8 -28.4 0.038 33.2 0.851 148.4 15.2
2.2 0.930 134.2 4.1 1.6 46.4 -28.0 0.04 31.8 0.852 146.6 14.6
2.3 0.931 131.6 3.7 1.523 44.0 -27.7 0.041 30.5 0.851 145.0 14.2
2.4 0.929 129.2 3.2 1.442 41.7 -27.5 0.042 29.0 0.853 143.3 13.7
2.5 0.924 126.7 2.7 1.371 39.2 -27.1 0.044 27.5 0.845 142.1 13.0
3 0.917 114.6 0.7 1.09 27.7 -26.4 0.048 20.1 0.855 134.5 11.1
3.5 0.911 102.2 -1.1 0.886 18.3 -25.7 0.052 13.6 0.874 129.8 9.6
4 0.921 93.1 -2.3 0.771 9.1 -25.5 0.053 6.8 0.894 121.3 9.1
5 0.922 79.3 -4.9 0.569 -10.0 -24.9 0.057 -7.3 0.912 101.1 7.2
6 0.921 64.3 -7.1 0.441 -30.0 -24.6 0.059 -28.5 0.929 85.8 6.3
7 0.921 43.0 -9.4 0.337 -46.5 -25.8 0.051 -40.6 0.863 68.4 2.8
8 0.922 25.9 -11.3 0.273 -65.6 -26.6 0.047 -57.3 0.875 53.0 1.6
9 0.922 13.2 -13.0 0.225 -84.2 -28.2 0.039 -76.1 0.914 35.5 1.5
10 0.921 11.7 -15.3 0.171 -93.0 -31.1 0.028 -84.5 0.935 26.0 0.7
11 0.921 0.8 -16.2 0.155 -106.9 -33.6 0.021 -111.9 0.899 19.0 -1.2
12 0.923 -7.6 -17.1 0.139 -117.3 -43.1 0.007 -160.6 0.954 7.2 1.7
13 0.923 -10.9 -18.3 0.122 -130.6 -39.2 0.011 77.1 0.901 -1.6 -2.4
14 0.922 -20.2 -19.2 0.11 -150.3 -36.5 0.015 31.3 0.897 -8.1 -3.8
15 0.925 -23.6 -19.0 0.112 -172.7 -37.7 0.013 -5.0 0.884 -20.3 -4.2
16 0.924 -21.8 -19.4 0.107 165.1 -39.2 0.011 -3.4 0.873 -27.6 -5.0
17 0.924 -24.0 -18.1 0.124 147.9 -39.2 0.011 -175.1 0.865 -35.4 -3.6
18 0.923 -31.6 -17.3 0.136 127.1 -33.2 0.022 153.4 0.830 -43.4 -3.5
40
30 MSG Notes:
(dB)

2

MSG/MAG & |S21|

0 of the drain lead.
S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 4.5V/360 mA.
13
0.1 0.921 -132.3 31.4 36.968 111.4 -37.7 0.013 31.1 0.651 -160.8 34.5
0.2 0.916 -158.2 26.0 19.86 97.3 -36.5 0.015 23.9 0.698 -171.7 31.2
0.3 0.917 -169.1 22.6 13.453 90.5 -36.5 0.015 23.3 0.709 -176.6 29.5
0.4 0.915 -175.9 20.1 10.143 85.6 -35.9 0.016 24.4 0.712 -179.8 28.0
0.5 0.913 178.7 18.1 8.037 84.1 -35.4 0.017 28.1 0.716 176.2 26.7
0.6 0.914 174.5 16.6 6.733 81.3 -34.9 0.018 30.2 0.715 173.8 25.7
0.7 0.916 170.9 15.3 5.837 78.6 -34.4 0.019 32.0 0.715 171.6 24.9
0.8 0.916 167.4 14.3 5.163 75.8 -33.6 0.021 33.2 0.713 169.6 23.9
0.9 0.918 164.1 13.3 4.632 72.9 -33.2 0.022 34.1 0.714 167.6 23.2
1 0.919 160.8 12.5 4.205 70.0 -32.8 0.023 34.4 0.712 165.7 22.6
1.1 0.920 159.4 12.1 4.024 68.5 -32.4 0.024 34.4 0.712 164.8 22.2
1.2 0.921 157.9 11.7 3.842 67.0 -32.0 0.025 34.4 0.712 163.8 21.9
1.3 0.920 155.2 10.9 3.525 64.0 -31.7 0.026 34.2 0.711 162.0 21.3
1.4 0.917 152.3 10.3 3.261 61.0 -31.4 0.027 33.8 0.713 160.2 20.4
1.5 0.917 149.8 9.6 3.031 58.3 -30.8 0.029 33.4 0.713 158.4 19.5
1.6 0.920 147.2 9.0 2.832 55.3 -30.5 0.030 32.7 0.713 156.6 18.9
1.7 0.920 144.3 8.5 2.656 52.3 -30.2 0.031 31.8 0.713 154.8 18.1
1.8 0.919 141.7 7.9 2.490 49.6 -29.6 0.033 31.1 0.714 153.2 17.4
1.9 0.918 139.2 7.4 2.342 46.8 -29.4 0.034 30.0 0.714 151.6 16.8
2 0.919 136.7 6.9 2.206 44.1 -29.1 0.035 29.0 0.714 150.0 16.3
2.1 0.917 134.1 6.4 2.089 41.4 -28.9 0.036 27.8 0.715 148.2 15.7
2.2 0.919 131.5 5.9 1.982 38.6 -28.6 0.037 26.8 0.715 146.6 15.3
2.3 0.916 129.3 5.4 1.870 35.8 -28.4 0.038 25.4 0.714 144.8 14.7
2.4 0.912 126.6 5.0 1.784 33.4 -28.2 0.039 24.3 0.715 143.8 14.1
2.5 0.909 124.5 4.6 1.707 31.0 -28.0 0.040 23.3 0.732 142.1 13.7
3 0.909 112.2 2.6 1.345 18.4 -27.1 0.044 16.9 0.734 135.3 11.7
3.5 0.912 99.5 0.8 1.091 8.3 -26.6 0.047 11.5 0.742 131.4 10.2
4 0.923 92.6 -0.5 0.944 -2.0 -26.3 0.048 6.2 0.752 122.9 9.5
5 0.922 78.2 -3.4 0.678 -23.9 -25.7 0.052 -5.8 0.771 102.2 7.0
6 0.921 61.3 -5.8 0.514 -46.3 -26.2 0.049 -22.8 0.791 84.0 5.2
7 0.921 41.2 -8.3 0.383 -64.8 -26.6 0.047 -39.7 0.802 69.1 3.1
8 0.922 24.3 -10.5 0.298 -85.4 -27.3 0.043 -55.8 0.841 54.0 2.0
9 0.923 11.8 -12.8 0.230 -106.2 -29.1 0.035 -73.3 0.883 36.5 1.2
10 0.922 10.8 -14.9 0.179 -114.3 -31.7 0.026 -81.6 0.900 27.0 0
11 0.921 0.3 -16.4 0.151 -132.9 -35.4 0.017 -112 0.879 20.6 -1.8
12 0.924 -8.0 -18.3 0.121 -145.5 -48.0 0.004 -174.6 0.924 8.0 -1.5
13 0.923 -12.1 -20.1 0.099 -162.1 -37.7 0.013 75.2 0.885 0.6 -5.1
14 0.922 -20.6 -22.2 0.078 -177.8 -35.9 0.016 38.6 0.889 -5.1 -7.2
15 0.925 -23.6 -22.9 0.072 168.0 -38.4 0.012 11.1 0.872 -15.9 -8.4
16 0.925 -23.1 -22.9 0.072 158.3 -37.1 0.014 5.1 0.873 -21.8 -8.4
17 0.924 -24.3 -20.4 0.096 150.1 -43.1 0.007 155.8 0.867 -27.8 -5.8
18 0.924 -32.5 -18.1 0.125 133.1 -36.5 0.015 146.2 0.855 -34.7 -3.7
40
30 MSG Notes:
(dB)

2

MSG/MAG & |S21|
MAG
10 input reference plane is at the end of the gate
0
S21 of the drain lead.
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 5.5V/280 mA.
14
0.1 0.922 -131.5 31.3 36.764 111.7 -37.1 0.014 30.8 0.65 -159.4 34.2
0.2 0.917 -157.7 25.9 19.783 97.5 -36.5 0.015 23.2 0.70 -171.0 31.2
0.3 0.916 -168.8 22.5 13.403 90.6 -35.9 0.016 22.1 0.71 -176.1 29.2
0.4 0.914 -175.7 20.1 10.105 85.7 -35.4 0.017 22.9 0.71 -179.5 27.7
0.5 0.912 178.8 18.1 8.007 84.1 -34.9 0.018 26.5 0.72 176.4 26.5
0.6 0.913 174.7 16.5 6.708 81.3 -34.4 0.019 28.6 0.72 174.1 25.5
0.7 0.915 171.0 15.3 5.815 78.7 -34.0 0.02 30.3 0.72 171.8 24.6
0.8 0.916 167.6 14.2 5.144 75.9 -33.6 0.021 31.4 0.71 169.8 23.9
0.9 0.918 164.1 13.3 4.613 72.9 -33.2 0.022 32.4 0.71 167.7 23.2
1 0.918 161.0 12.4 4.188 70.1 -32.4 0.024 32.7 0.71 165.9 22.4
1.1 0.919 159.5 12.1 4.008 68.6 -32.0 0.025 32.8 0.71 164.9 22.0
1.2 0.920 158.0 11.7 3.827 67.1 -32.0 0.025 32.8 0.71 163.9 21.8
1.3 0.920 155.3 10.9 3.512 64.0 -31.7 0.026 32.5 0.71 162.1 21.3
1.4 0.917 152.4 10.2 3.249 61.1 -31.1 0.028 32.2 0.71 160.3 20.6
1.5 0.917 150.0 9.6 3.023 58.4 -30.8 0.029 31.9 0.71 158.5 19.7
1.6 0.919 147.3 9.0 2.821 55.3 -30.5 0.03 31.2 0.71 156.7 19.0
1.7 0.918 144.5 8.5 2.648 52.3 -29.9 0.032 30.4 0.72 154.9 18.3
1.8 0.919 141.8 7.9 2.482 49.6 -29.6 0.033 29.6 0.72 153.3 17.6
1.9 0.918 139.3 7.4 2.333 46.8 -29.4 0.034 28.6 0.72 151.6 16.9
2 0.918 136.7 6.8 2.199 44.1 -29.1 0.035 27.6 0.72 150.0 16.3
2.1 0.917 134.2 6.4 2.082 41.4 -28.9 0.036 26.5 0.72 148.2 15.8
2.2 0.918 131.6 5.9 1.973 38.6 -28.6 0.037 25.4 0.72 146.7 15.3
2.3 0.913 129.4 5.4 1.868 35.7 -28.4 0.038 24.2 0.71 145.1 14.6
2.4 0.912 126.7 5.0 1.778 33.4 -28.2 0.039 23.0 0.72 143.8 14.1
2.5 0.908 124.5 4.6 1.700 31.1 -28.0 0.04 22.1 0.73 142.1 13.6
3 0.907 112.2 2.5 1.340 18.4 -27.1 0.044 15.8 0.74 135.2 11.7
3.5 0.912 99.5 1.4 1.176 7.8 -26.7 0.046 9.7 0.76 126.6 10.8
4 0.923 92.6 0.1 1.012 -2.9 -26.6 0.047 3.5 0.78 117.9 10.3
5 0.922 78.2 -3.3 0.685 -24.1 -26.4 0.048 -10.3 0.82 100.7 7.8
6 0.921 61.3 -5.8 0.512 -46.3 -26.6 0.047 -25.6 0.85 84.1 6.2
7 0.921 41.2 -8.4 0.381 -64.7 -26.7 0.046 -40.9 0.86 67.8 4.0
8 0.922 24.3 -10.5 0.298 -85.4 -27.3 0.043 -56.4 0.87 51.5 2.5
9 0.923 11.8 -12.8 0.230 -106.7 -29.1 0.035 -74.0 0.88 36.5 1.2
10 0.922 10.8 -14.9 0.179 -114.6 -31.7 0.026 -82.1 0.90 27.1 0
11 0.921 0.3 -16.4 0.151 -132.2 -35.4 0.017 -113.8 0.88 20.7 -1.8
12 0.924 -8.0 -18.4 0.120 -145.0 -46.0 0.005 179.4 0.92 8.1 -1.8
13 0.923 -12.1 -20.1 0.099 -161.7 -37.7 0.013 76.2 0.89 0.7 -4.9
14 0.922 -20.6 -22.2 0.078 -176.9 -35.9 0.016 39.1 0.89 -5.0 -7.2
15 0.925 -23.6 -22.9 0.072 171.6 -38.4 0.012 12.7 0.87 -15.8 -8.4
16 0.925 -23.1 -22.4 0.076 160.6 -36.5 0.015 6.4 0.87 -21.7 -8.0
17 0.924 -24.3 -20.1 0.099 151.7 -43.1 0.007 153.6 0.87 -27.7 -5.5
18 0.924 -32.5 -18.1 0.125 131.4 -36.5 0.015 145.0 0.86 -34.6 -3.5
40
30
MSG Notes:
(dB)

2

MSG/MAG & |S21|

S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
2
Figure 35. MSG/MAG & |S21| vs Frequency
at 5.5V/200 mA.
15
0.1 0.874 -133.9 31.3 36.688 112.8 -39.2 0.011 32.1 0.639 -161.7 35.2
0.2 0.902 -159.0 26.0 19.973 98.3 -37.7 0.013 25.5 0.688 -172 31.9
0.3 0.910 -169.6 22.7 13.575 91.1 -37.1 0.014 24.9 0.699 -176.7 29.9
0.4 0.911 -176.2 20.2 10.251 86.1 -36.5 0.015 26.2 0.702 -179.9 28.3
0.5 0.911 178.4 18.2 8.123 84.4 -35.9 0.016 30.0 0.706 176.1 27.1
0.6 0.912 174.4 16.7 6.810 81.6 -35.4 0.017 32.1 0.706 173.7 26.0
0.7 0.914 170.8 15.4 5.902 78.8 -34.9 0.018 34.0 0.705 171.5 25.2
0.8 0.916 167.4 14.4 5.218 76.0 -34.4 0.019 35.3 0.702 169.6 24.4
0.9 0.916 164.0 13.4 4.686 73.0 -33.6 0.021 36.2 0.705 167.6 23.5
1 0.917 160.9 12.6 4.247 70.1 -33.2 0.022 36.6 0.702 165.7 22.9
1.1 0.919 159.5 12.2 4.064 68.6 -33.0 0.0225 36.6 0.702 164.7 22.6
1.2 0.920 158.0 11.8 3.881 67.1 -32.8 0.023 36.5 0.702 163.7 22.3
1.3 0.919 155.3 11.0 3.562 64.1 -32.0 0.025 36.3 0.700 162.1 21.2
1.4 0.915 152.4 10.4 3.296 61.0 -31.7 0.026 35.8 0.703 160.3 19.7
1.5 0.916 150.0 9.7 3.064 58.3 -31.4 0.027 35.5 0.702 158.5 19.0
1.6 0.918 147.4 9.1 2.861 55.2 -30.8 0.029 34.8 0.702 156.7 18.5
1.7 0.918 144.5 8.6 2.684 52.2 -30.5 0.03 33.9 0.702 155.0 17.9
1.8 0.918 141.9 8.0 2.517 49.5 -30.2 0.031 33.0 0.703 153.4 17.3
1.9 0.917 139.4 7.5 2.368 46.7 -29.6 0.033 32.0 0.703 151.8 16.7
2 0.918 136.9 7.0 2.229 43.9 -29.4 0.034 30.9 0.703 150.2 16.2
2.1 0.916 134.4 6.5 2.110 41.2 -29.1 0.035 29.7 0.705 148.5 15.6
2.2 0.917 131.8 6.0 2.003 38.4 -28.9 0.036 28.6 0.704 146.9 15.2
2.3 0.913 129.6 5.5 1.89 35.6 -28.6 0.037 27.3 0.702 145.6 14.5
2.4 0.911 126.9 5.1 1.802 33.2 -28.4 0.038 26.1 0.703 144.2 14.0
2.5 0.907 124.8 4.7 1.724 30.8 -28.2 0.039 25.1 0.722 142.6 13.6
3 0.907 112.5 2.7 1.360 18.0 -27.3 0.043 18.7 0.724 135.9 11.7
3.5 0.912 99.5 1.5 1.192 7.1 -26.9 0.045 11.0 0.742 127.8 10.8
4 0.923 92.6 0.5 1.054 -3.7 -26.6 0.047 3.0 0.761 118.9 10.5
5 0.922 78.2 -2.2 0.777 -25.4 -26.2 0.049 -11.9 0.799 101.3 8.6
6 0.921 61.3 -5.7 0.520 -47.3 -26.6 0.047 -25.5 0.828 84.3 5.9
7 0.921 41.2 -8.2 0.388 -66.0 -26.7 0.046 -39.2 0.846 68.3 3.9
8 0.922 24.3 -10.3 0.304 -86.5 -27.3 0.043 -54.0 0.863 52.3 2.5
9 0.923 11.8 -12.7 0.233 -108.9 -29.1 0.035 -71.3 0.877 37.6 1.2
10 0.922 10.8 -14.8 0.181 -117.8 -31.7 0.026 -78.2 0.894 28.0 -0.2
11 0.921 0.3 -16.1 0.156 -134.7 -34.9 0.018 -106.9 0.874 21.3 -1.7
12 0.924 -8.0 -18.1 0.125 -147.8 -48.0 0.004 -144.3 0.919 8.2 -1.6
13 0.923 -12.1 -19.7 0.104 -165.7 -40.0 0.01 74.2 0.878 0.1 -4.9
14 0.922 -20.6 -21.9 0.080 178.6 -37.1 0.014 30.8 0.881 -6.4 -7.3
15 0.925 -23.6 -22.3 0.077 167.6 -40.0 0.01 -3.8 0.864 -17.9 -8.0
16 0.925 -23.1 -22.3 0.077 155.5 -38.4 0.012 -13.4 0.861 -25.0 -8.2
17 0.924 -24.3 -19.5 0.106 148.1 -39.2 0.011 -177.4 0.854 -32.2 -5.3
18 0.924 -32.5 -17.6 0.132 130.3 -33.6 0.021 165.0 0.832 -41.4 -3.7
40
30 MSG Notes:
(dB)

2

MSG/MAG & |S21|

S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 5.5V/360 mA.
16
0.1 0.926 -134.5 29.5 29.964 111.1 -39.2 0.011 33.1 0.776 -169.9 34.4
0.2 0.928 -159.6 24.1 16.031 97.4 -37.7 0.013 27.4 0.817 -176.6 30.9
0.3 0.930 -170.1 20.7 10.841 90.8 -37.1 0.014 27.5 0.826 179.8 28.9
0.4 0.928 -176.7 18.2 8.172 86.1 -36.5 0.015 29.0 0.829 177.1 27.4
0.5 0.927 178.0 16.2 6.472 84.9 -35.9 0.016 33.4 0.834 174.0 26.1
0.6 0.929 174.0 14.7 5.424 82.4 -35.4 0.017 35.7 0.835 171.9 25.0
0.7 0.930 170.4 13.4 4.704 80.0 -34.4 0.019 37.6 0.835 169.9 23.9
0.8 0.932 167.0 12.4 4.161 77.4 -34.0 0.02 38.8 0.833 168.0 23.2
0.9 0.933 163.6 11.5 3.744 74.7 -33.2 0.022 39.6 0.838 166.1 22.3
1 0.934 160.4 10.6 3.397 72.0 -32.4 0.024 39.7 0.836 164.1 21.5
1.1 0.935 159.0 10.2 3.250 70.6 -32.0 0.025 39.6 0.836 163.1 21.1
1.2 0.936 157.5 9.8 3.103 69.2 -32.0 0.025 39.5 0.835 162.1 20.9
1.3 0.935 154.7 9.1 2.848 66.4 -31.4 0.027 39.0 0.832 160.3 20.2
1.4 0.932 151.9 8.4 2.637 63.5 -31.1 0.028 38.2 0.837 158.4 19.7
1.5 0.931 149.4 7.8 2.453 60.9 -30.5 0.03 37.6 0.836 156.5 19.0
1.6 0.933 146.8 7.2 2.292 58.1 -30.2 0.031 36.6 0.834 154.6 18.1
1.7 0.931 143.9 6.7 2.153 55.4 -29.6 0.033 35.5 0.835 152.8 17.3
1.8 0.933 141.2 6.1 2.018 52.8 -29.4 0.034 34.4 0.835 151.1 16.8
1.9 0.931 138.7 5.6 1.899 50.1 -28.9 0.036 33.0 0.834 149.4 16.1
2 0.931 136.2 5.0 1.788 47.5 -28.6 0.037 31.7 0.833 147.7 15.5
2.1 0.929 133.6 4.6 1.691 45.1 -28.4 0.038 30.3 0.834 145.9 14.9
2.2 0.930 131.0 4.1 1.609 42.5 -28.0 0.040 29.0 0.833 144.2 14.5
2.3 0.927 128.7 3.7 1.526 40.1 -27.7 0.041 27.3 0.827 142.4 13.9
2.4 0.923 126.2 3.2 1.447 37.6 -27.5 0.042 26.1 0.827 141.2 13.3
2.5 0.920 124.0 2.8 1.386 35.6 -27.3 0.043 25.0 0.848 139.6 13.1
3 0.918 111.6 0.8 1.095 23.8 -26.6 0.047 17.5 0.841 132.4 11.1
3.5 0.912 99.5 -1.0 0.891 14.7 -26.0 0.050 11.3 0.837 128.1 9.2
4 0.923 92.6 -2.3 0.770 6.7 -25.7 0.052 6.4 0.838 121.4 8.5
5 0.922 78.2 -5.0 0.565 -14.8 -25.5 0.053 -8.4 0.840 98.7 6.2
6 0.921 61.3 -7.1 0.442 -35.0 -25.4 0.054 -29.5 0.853 80.1 4.6
7 0.921 41.2 -9.5 0.336 -51.9 -26.4 0.048 -42.3 0.857 65.5 2.7
8 0.922 24.3 -11.3 0.271 -70.9 -27.1 0.044 -58.9 0.881 50.5 1.8
9 0.923 11.8 -13.4 0.215 -90.6 -29.1 0.035 -77 0.916 33.6 1.5
10 0.922 10.8 -15.3 0.171 -98.1 -32.0 0.025 -86.1 0.925 24.4 0.4
11 0.921 0.3 -16.4 0.151 -113.4 -35.9 0.016 -119.4 0.899 18.3 -1.2
12 0.924 -8.0 -17.9 0.127 -124.8 -46.0 0.005 166.3 0.943 5.9 0.2
13 0.923 -12.1 -19.2 0.11 -139.7 -37.1 0.014 75.0 0.900 -1.3 -3.4
14 0.922 -20.6 -20.6 0.093 -156.5 -35.4 0.017 37.4 0.903 -6.9 -5.0
15 0.925 -23.6 -20.4 0.095 -175.6 -38.4 0.012 5.2 0.885 -17.6 -5.6
16 0.925 -23.1 -20.4 0.096 168.4 -37.7 0.013 -2.2 0.881 -23.9 -5.7
17 0.924 -24.3 -18.3 0.121 151.1 -40.0 0.01 166.0 0.870 -30.0 -3.6
18 0.924 -32.5 -16.7 0.146 128.4 -33.6 0.021 145.9 0.846 -37.2 -2.4
40
30 MSG Notes:
(dB)

2
MSG/MAG & |S21|

10 input reference plane is at the end of the gate
MAG
0
of the drain lead.
S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 3.5V/280 mA.
17
0.1 0.927 -132.6 30.4 33.278 111.3 -37.1 0.014 30.8 0.713 -163.4 33.8
0.2 0.922 -158.4 25.0 17.839 97.4 -35.9 0.016 23.7 0.762 -173.1 30.5
0.3 0.921 -169.2 21.6 12.071 90.7 -35.4 0.017 23.1 0.773 -177.6 28.5
0.4 0.919 -176.0 19.2 9.101 86.0 -34.9 0.018 24.1 0.776 179.3 27.0
0.5 0.918 178.6 17.2 7.208 84.6 -34.9 0.018 28.0 0.780 175.7 26.0
0.6 0.919 174.6 15.6 6.036 82.0 -34.4 0.019 30.1 0.779 173.5 25.0
0.7 0.919 171.0 14.4 5.237 79.5 -33.6 0.021 32.0 0.780 171.4 24.0
0.8 0.920 167.6 13.3 4.637 76.9 -33.2 0.022 33.1 0.778 169.4 23.2
0.9 0.922 164.2 12.4 4.159 74.1 -32.4 0.024 34.0 0.779 167.4 22.4
1 0.923 161.1 11.5 3.778 71.4 -32.0 0.025 34.4 0.778 165.6 21.8
1.1 0.924 159.7 11.2 3.617 70.0 -31.7 0.026 34.4 0.779 164.7 21.4
1.2 0.924 158.2 10.8 3.455 68.5 -31.4 0.027 34.4 0.779 163.7 21.1
1.3 0.924 155.5 10.0 3.171 65.6 -31.1 0.028 34.1 0.778 161.9 20.5
1.4 0.921 152.6 9.4 2.936 62.8 -30.5 0.030 33.6 0.779 160.0 19.9
1.5 0.920 150.2 8.7 2.734 60.1 -30.2 0.031 33.3 0.779 158.2 19.5
1.6 0.923 147.6 8.1 2.554 57.2 -29.9 0.032 32.5 0.778 156.5 19.0
1.7 0.922 144.7 7.6 2.395 54.4 -29.4 0.034 31.7 0.779 154.6 18.1
1.8 0.922 142.1 7.0 2.248 51.8 -29.1 0.035 30.8 0.778 153.1 17.2
1.9 0.921 139.6 6.5 2.116 49.2 -28.9 0.036 29.7 0.778 151.4 16.5
2 0.921 137.1 6.0 1.994 46.5 -28.4 0.038 28.7 0.777 149.7 15.9
2.1 0.919 134.6 5.5 1.889 44.0 -28.2 0.039 27.4 0.778 148.0 15.3
2.2 0.920 132.0 5.1 1.792 41.3 -28.0 0.040 26.3 0.777 146.4 14.8
2.3 0.918 129.7 4.6 1.690 38.8 -27.7 0.041 25.1 0.777 145.1 14.3
2.4 0.914 127.1 4.2 1.618 36.4 -27.5 0.042 23.8 0.775 143.5 13.7
2.5 0.910 125.0 3.8 1.549 34.1 -27.3 0.043 22.8 0.792 141.8 13.3
3 0.909 112.7 1.8 1.226 22.1 -26.6 0.047 16.3 0.790 135.0 11.3
3.5 0.912 99.5 0.0 1.000 12.5 -26.0 0.050 10.7 0.796 131.2 9.8
4 0.923 92.6 -1.2 0.869 2.9 -25.7 0.052 5.2 0.801 122.7 9.1
5 0.922 78.2 -4.0 0.633 -18.0 -25.0 0.056 -7.1 0.812 102.1 6.7
6 0.921 61.3 -6.2 0.488 -39.4 -25.5 0.053 -24.3 0.823 84.0 5.0
7 0.921 41.2 -8.7 0.369 -57.1 -26.0 0.050 -41.5 0.822 69.2 2.9
8 0.922 24.3 -10.6 0.294 -76.8 -26.7 0.046 -58.0 0.854 53.9 1.9
9 0.923 11.8 -12.8 0.230 -97.3 -28.4 0.038 -75.9 0.890 36.3 1.2
10 0.922 10.8 -15.1 0.176 -105.0 -31.1 0.028 -84.6 0.901 26.6 -0.3
11 0.921 0.3 -16.1 0.156 -120.3 -34.4 0.019 -113.3 0.877 19.8 -1.7
12 0.924 -8.0 -17.9 0.128 -132.2 -44.4 0.006 -164.6 0.921 6.7 -1.2
13 0.923 -12.1 -19.2 0.110 -146.9 -39.2 0.011 75.2 0.881 -1.4 -4.2
14 0.922 -20.6 -20.8 0.091 -161.8 -36.5 0.015 34.4 0.885 -7.8 -6.0
15 0.925 -23.6 -20.8 0.091 -177.7 -38.4 0.012 -0.7 0.868 -19.5 -6.5
16 0.925 -23.1 -20.6 0.093 168.1 -37.7 0.013 -7.2 0.867 -26.6 -6.4
17 0.924 -24.3 -18.4 0.120 156.0 -41.9 0.008 -177.4 0.857 -34.0 -4.2
18 0.924 -32.5 -16.5 0.150 132.5 -34.9 0.018 158.2 0.833 -42.9 -2.5
40
30 MSG
Notes:
(dB)

2
MSG/MAG & |S21|

0
of the drain lead.
S21
-10
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 3.5V/200 mA.
18
0.1 0.925 -134.2 30.4 33.142 110.8 -38.4 0.012 31.9 0.73 -166.7 34.4
0.2 0.923 -159.4 25.0 17.732 97.1 -37.1 0.014 25.7 0.77 -174.9 31.0
0.3 0.924 -170.0 21.6 11.996 90.5 -36.5 0.015 25.7 0.78 -179.0 29.0
0.4 0.923 -176.6 19.1 9.042 85.8 -35.9 0.016 27.1 0.79 178.1 27.5
0.5 0.922 178.1 17.1 7.165 84.5 -35.9 0.016 31.4 0.79 174.8 26.5
0.6 0.923 174.1 15.6 6.003 81.9 -34.9 0.018 33.6 0.79 172.6 25.2
0.7 0.924 170.5 14.3 5.206 79.4 -34.4 0.019 35.5 0.79 170.5 24.4
0.8 0.925 167.1 13.3 4.608 76.8 -34.0 0.02 36.6 0.79 168.5 23.6
0.9 0.927 163.6 12.3 4.138 74.0 -33.2 0.022 37.5 0.79 166.5 22.7
1 0.928 160.5 11.5 3.757 71.2 -32.4 0.024 37.7 0.79 164.6 21.9
1.1 0.929 159.1 11.1 3.596 69.8 -32.0 0.025 37.7 0.79 163.6 21.6
1.2 0.929 157.6 10.7 3.435 68.3 -32.0 0.025 37.6 0.79 162.6 21.4
1.3 0.929 154.8 10.0 3.152 65.4 -31.7 0.026 37.1 0.79 160.8 20.8
1.4 0.925 152.0 9.3 2.918 62.5 -31.1 0.028 36.6 0.79 158.9 20.2
1.5 0.926 149.5 8.7 2.713 59.9 -30.8 0.029 36.1 0.79 157.1 19.1
1.6 0.927 146.8 8.1 2.535 57.0 -30.2 0.031 35.1 0.79 155.3 18.5
1.7 0.927 144.1 7.5 2.380 54.1 -29.9 0.032 34.1 0.79 153.4 17.8
1.8 0.927 141.3 7.0 2.231 51.5 -29.4 0.034 33.0 0.79 151.8 17.1
1.9 0.926 138.9 6.4 2.098 48.8 -29.1 0.035 31.8 0.79 150.0 16.5
2 0.926 136.4 5.9 1.977 46.2 -28.9 0.036 30.6 0.79 148.4 15.9
2.1 0.923 133.8 5.4 1.871 43.6 -28.6 0.037 29.3 0.79 146.6 15.3
2.2 0.926 131.2 5.0 1.777 41.0 -28.2 0.039 28.1 0.79 144.9 14.9
2.3 0.922 128.8 4.5 1.684 38.6 -28.0 0.04 26.6 0.79 143.5 14.3
2.4 0.919 126.3 4.1 1.600 36.0 -27.7 0.041 25.3 0.79 142.0 13.8
2.5 0.915 124.2 3.7 1.531 33.8 -27.5 0.042 24.2 0.80 140.3 13.3
3 0.913 111.9 1.6 1.208 21.7 -26.7 0.046 17.2 0.80 133.2 11.3
3.5 0.912 99.5 -0.2 0.982 12.2 -26.6 0.047 10.0 0.80 124.8 9.6
4 0.923 92.6 -1.5 0.846 3.8 -26.4 0.048 2.8 0.81 116.4 9.0
5 0.922 78.2 -4.2 0.618 -18.4 -26.0 0.05 -11.7 0.82 99.5 6.8
6 0.921 61.3 -6.4 0.477 -39.3 -25.7 0.052 -26.1 0.83 82.7 5.0
7 0.921 41.2 -8.9 0.360 -56.8 -26.0 0.05 -39.4 0.83 66.6 2.8
8 0.922 24.3 -10.9 0.286 -76.6 -26.7 0.046 -55.9 0.86 51.6 1.8
9 0.923 11.8 -12.9 0.226 -97.3 -28.4 0.038 -73.5 0.90 34.5 1.3
10 0.922 10.8 -15.0 0.177 -104.9 -31.1 0.028 -81.6 0.91 25.1 0
11 0.921 0.3 -16.4 0.152 -121.3 -34.4 0.019 -108.3 0.89 18.9 -1.6
12 0.924 -8.0 -18.1 0.124 -134.4 -46.0 0.005 -147.3 0.93 6.5 -1.0
13 0.923 -12.1 -19.6 0.105 -148.8 -40.0 0.01 71.0 0.89 -0.7 -4.4
14 0.922 -20.6 -21.2 0.087 -163.5 -37.1 0.014 30.2 0.89 -6.3 -6.2
15 0.925 -23.6 -21.4 0.085 -178.8 -39.2 0.011 -4.9 0.88 -17.1 -6.7
16 0.925 -23.1 -21.2 0.087 167.6 -37.7 0.013 -8.8 0.87 -23.1 -6.9
17 0.924 -24.3 -18.6 0.117 155.7 -41.9 0.008 -173.5 0.87 -29.2 -4.0
18 0.924 -32.5 -16.8 0.145 133.2 -35.4 0.017 161.7 0.85 -36.3 -2.4
40
30 MSG
(dB)
20 Notes:
2
MSG/MAG & |S21|
1. S parameter is measured on a microstrip line

10 MAG made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
0
S21
-10 of the drain lead.
-20
-30
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

at 3.5V/360 mA.
19
Device Models, PCB Layout and Stencil Device
Refer to Avago’s Web Site: www.avagotech.com/view/rf
Ordering Information
Part Number No. of Devices Container
ATF-50189-TR1 3000 13” Reel
ATF-50189-BLK 100 antistatic bag
SOT 89 Package Dimensions
D
A
D1
C
H E E1
L
#1 #2 #3
B
B1
e
#3 #2 #1
e1
BOTTOM
COMMON
DIMENSIONS Millimeters DIMENSIONS Inches
SYMBOL MIN. NOM. MAX. MIN. NOM. MAX.

A 1.40 1.50 1.60 0.055 0.059 0.063
B 0.44 0.50 0.56 0.017 0.0195 0.022
B1 0.36 0.42 0.48 0.014 0.0165 0.019
C 0.35 0.40 0.44 0.014 0.016 0.017
D 4.40 4.50 4.60 0.173 0.177 0.181
D1 1.62 1.73 1.83 0.064 0.068 0.072
E 2.30 2.50 2.60 0.090 0.096 0.102
E1 2.13 2.20 2.29 0.084 0.087 0.090
e 1.50 BSC 1.50 BSC 1.50 BSC 0.059 BSC 0.059 BSC 0.059 BSC
e1 3.00 BSC 3.00 BSC 3.00 BSC 0.118 BSC 0.188 BSC 0.188 BSC
H 3.95 4.10 4.25 0.155 0.161 0.167
L 0.90 1.10 1.20 0.035 0.038 0.047
Notes:
1. Dimensioning and tolerancing per ANSI.Y14.5M-1982
2. Controlling dimension: Millimeter convertions to inches are not necessarily exact.
3. Dimension B1, 2 places.
20
Device Orientation
REEL
OGX OGX OGX OGX

CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
φ1.50±0.10 8.00±0.10 4.00±0.10 2.00±0.05
(0.059+0.004) (0.315±0.004) (0.157±0.004) (0.069±0.004)
1.75±0.10
(0.069±0.004)
5.50±0.05
(0.217±0.002)
12.0±0.30-0.10
(0.472+0.012-0.004)
+
φ1.50±0.25
(0.059+0.010)
0.292±0.02
(0.0115±0.0008)
1.80±0.10
(0.0709±0.004)
8 6° MAX
4.80±0.10 4.40±0.10
(0.189±0.004) (0.1732±0.004)
Dimensions in mm (inches)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited
in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved.
Obsoletes 5989-3790EN
AV02-0049EN January 3, 2007
ATF-501P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Avago Technologies’s ATF-501P8 is a single-voltage high • Single voltage operation
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
• High Linearity and P1dB
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a medium-power amplifier. Its • Low Noise Figure
operating frequency range is from 400 MHz to 3.9 GHz. • Excellent uniformity in product specifications
The thermally efficient package measures only 2mm • Small package size: 2.0 x 2.0 x 0.75 mm3
x 2mm x 0.75mm. Its backside metalization provides • Point MTTF > 300 years[2]
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300 • MSL-1 and lead-free
years at a mounting temperature of +85ºC. All devices • Tape-and-Reel packaging option available
are 100% RF & DC tested.
Notes:
Specifications
1. Enhancement mode technology employs a single positive Vgs, • 2 GHz; 4.5V, 280 mA (Typ.)
conventional depletion mode devices. • 45.5 dBm Output IP3
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N. • 29 dBm Output Power at 1dB gain compression
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias • 1 dB Noise Figure
power.
• 15 dB Gain
• 14.5 dB LFOM[4]
Pin Connections and Package Marking
• 65% PAE
(Thermal/RF Gnd)
Pin 8 Pin 1 (Source)

• 23oC/W thermal resistance
Pin 7 (Drain) Pin 2 (Gate)
Source
Pin 6 Pin 3
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver
Bottom View Amplifier for Cellular/PCS and WCDMA wireless
infrastructure
Pin 1 (Source) Pin 8 • Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
Pin 2 (Gate) Pin 7 (Drain)
0Px • General purpose discrete E-pHEMT for other high
Pin 3 Pin 6 linearity applications
Pin 4 (Source) Pin 5
Top View Attention: Observe precautions for

Note: handling electrostatic sensitive devices.
Package marking provides orientation and identification: ESD Machine Model (Class A)
“0P” = Device Code ESD Human Body Model (Class 1C)
“x” = Date code indicates the month of manufacture. Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
ATF-501P8 Absolute Maximum Ratings[1]
Notes:
Absolute 1. Operation of this device in excess of
Symbol Parameter Units Maximum any one of these parameters may cause
permanent damage.
VDS Drain–Source Voltage[2] V 7 2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is
VGS Gate–Source Voltage[2] V -5 to 0.8 25°C. Derate 43.5 mW/°C for TB > 69.5°C.
VGD Gate Drain Voltage[2] V -5 to 1 4. Channel-to-board thermal resistance
IDS Drain Current[2] A 1 Measurement method.
IGS Gate Current mA 12
Pin max. RF Input Power dBm 30
θch_b Thermal Resistance[4] °C/W 23
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6]

800 120 120
Vgs=0.7V Cpk=1.76 Cpk=1.51
700 Stdev=0.3 Stdev=3.38
100 100
600 Vgs=0.65V
80 80
500
Ids (mA)
Vgs=0.6V –3 Std +3 Std –3 Std +3 Std

400 60 60
300 Vgs=0.55V
40 40
200 Vgs=0.5V
20 20
100
0 0 0
0 1 2 3 4 5 6 27.5 28 28.5 29 29.5 30 30.5 45 55 65 75 85
Vds (V) P1dB (dBm) PAE (%)
Figure 1. Typical IV curve (Vgs = 0.01V) per step. Figure 2. P1dB. Figure 3. PAE.
100 100
Cpk=1.61 Cpk=1.1
80 80
60 60
40 40
20 20
0 0
13 14 15 16 17 42 43 44 45 46 47 48 49 50
GAIN (dB) OIP3 (dBm)
Figure 4. Gain. Figure 5. OIP3.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have
been de‑embedded from actual measurements.

ATF-501P8 Electrical Specifications

Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA — 5 —
Gm
Transconductance Vds = 4.5V, Gm = ∆Ids/∆Vgs; mmho — 1872 —
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -30 -0.8 —
NF Noise Figure [1] f = 2 GHz dB — 1 —
f = 900 MHz dB — — —
G Gain[1] f = 2 GHz dB 13.5 15 16.5
f = 900 MHz dB — 16.6 —
OIP3 Output 3rd Order Intercept Point[1,2] f = 2 GHz dBm 43 45.5 —
f = 900 MHz dBm — 42 —
P1dB Output 1dB Compressed[1] f = 2 GHz dBm 27.5 29 —
f = 900 MHz dBm — 27.3 —
PAE Power Added Efficiency[1] f = 2 GHz % 50 65 —
f = 900 MHz % — 49 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — 63.9 —
Power Ratio[1,3] Offset BW = 10 MHz dBc — 64.1 —
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull
tuner.
2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.
- Test Model 1
- Freq = 2140 MHz
- Pin = -5 dBm
4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.
See absolute max ratings and application note for more details.
Input Output
50 Ohm 50 Ohm
Matching Matching
Transmission Transmission
Circuit Circuit
Input Line and DUT Line and Output
Γ_mag=0.79 Γ_mag=0.69
Drain Bias T Drain Bias T
Γ_ang=-164° Γ_ang=-163°
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-off
between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.

1.8 nH 3.3 nH
50 Ohm 110 Ohm 110 Ohm 50 Ohm
1.2 pF .02 .03 .03 .02 1.2 pF
RF Input DUT RF Output
15 nH 47 nH
15 Ohm 2.2 µF
2.2 µF
Gate Drain
Supply Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply.
Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V 280 mA and
4.5V 400 mA quiesent bias respectively:
Typical Gammas at Optimum OIP3 at 4.5V 280 mA
Optimized for maximum OIP3 at 4.5V 280 mA

Freq (GHz) OIP3 Gain P1dB PAE Gamma Source Gamma Load
0.9 46.42 16.03 26.67 45.80 0.305 < -140 0.577 < 162
2.0 45.50 15.07 28.93 50.30 0.806 < -179.2 0.511 < 164
2.4 44.83 12.97 29.03 45.70 0.756 < -167 0.589 < -168
3.9 43.97 6.11 27.33 33.90 0.782 < -162 0.524 < -153
Typical Gammas at Optimum P1dB at 4.5V 280mA
Optimized for maximum P1dB at 4.5V 280 mA

0.9 39.29 20.90 30.49 41.00 0.859 < 165 0.757 < 179
2.0 41.79 14.72 30.60 45.30 0.76 < -171 0.691 < -168
2.4 42.37 11.25 30.24 39.70 0.745 < -166 0.694 < -161
3.9 42.00 5.63 28.26 25.80 0.759 < -159 0.708 < -149
Typical Gammas at Optimum OIP3 at 4.5V 400 mA
Optimized for maximum OIP3 at 4.5V 400 mA

0.9 49.15 16.85 27.86 44.20 0.5852 < -135.80 0.4785 < 177.00
2.0 48.18 14.72 29.36 48.89 0.7267 < -175.37 0.7338 < 179.56
2.4 47.54 12.47 29.10 46.83 0.6155 < -171.71 0.5411 < -172.02
3.9 45.44 8.05 28.49 37.02 0.7888 < -148.43 0.5247 < -145.84
Typical Gammas at Optimum P1dB at 4.5V 400 mA
Optimized for maximum P1dB at 4.5V 400 mA

0.9 41.78 21.84 31.23 49.97 0.7765 < 168.50 0.7589 < -175.09
2.0 43.28 14.83 31.03 44.78 0.8172 < -175.74 0.8011 < -165.75
2.4 42.46 11.90 30.66 41.00 0.8149 < -163.78 0.8042 < -161.79
3.9 42.94 7.70 29.56 33.06 0.8394 < -151.21 0.7826 < -149.00

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 280 mA
55 55 35
4.5V 4.5V
5.5V 5.5V
50 3.5V 50 3.5V
30
P1dB (dBm)
OIP3 (dBm)
OIP3 (dBm)
45 45
25
40 40
4.5V
5.5V
20 3.5V
35 35
30 30 15
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA) Idq (mA) Idq (mA)
Figure 8. OIP3 vs. Idq and Vds at 2 GHz. Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz. Figure 10. P1dB vs. Idq and Vds at 2 GHz.
35 25 25
4.5V 4.5V
5.5V 5.5V
20 3.5V 20 3.5V
30
P1dB (dBm)
15 15
GAIN (dB)
GAIN (dB)
25
10 10
4.5V
5.5V
20 3.5V 5 5
15 0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 11. P1dB vs. Idq and Vds at 0.9 GHz. Figure 12. Gain vs. Idq and Vds at 2 GHz. Figure 13. Gain vs. Idq and Vds at 0.9 GHz.
60 60
50 50
40 40
PAE (%)
PAE (%)
30 30
4.5V 4.5V
20 5.5V 20 5.5V
3.5V 3.5V
10 10
0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA) Idq (mA)
Figure 14. PAE vs. Idq and Vds at 2 GHz. Figure 15. PAE vs. Idq and Vds at 0.9 GHz.

Tuned for Optimal P1dB at 4.5V 280 mA
55 55 35
4.5V 4.5V
5.5V 5.5V
50 3.5V 50 3.5V
30
P1dB (dBm)
OIP3 (dBm)
OIP3 (dBm)
45 45
25
40 4.5V
40
5.5V
3.5V
20
35 35
30 30 15
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 16. OIP3 vs. Idq and Vds at 2 GHz. Figure 17. OIP3 vs. Idq and Vds at 0.9 GHz. Figure 18. P1dB vs. Idq and Vds at 2 GHz.
35 25 25
4.5V
5.5V
20 3.5V 20
30
P1dB (dBm)
15
GAIN (dB)
15
GAIN (dB)
25
4.5V 10 10
5.5V 4.5V
3.5V 5.5V
20 3.5V
5 5
15 0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 19. P1dB vs. Idq and Vds at 0.9 GHz. Figure 20. Gain vs. Idq and Vds at 2 GHz. Figure 21. Gain vs. Idq and Vds at 0.9 GHz.
60 60
50 50
40 40
PAE (%)
PAE (%)
30 30
4.5V 4.5V
20 5.5V 20 5.5V
3.5V 3.5V
10 10
0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA) Idq (mA)
Figure 22. PAE vs. Idq and Vds at 2 GHz. Figure 23. PAE vs. Idq and Vds at 0.9 GHz.

Tuned for Optimum OIP3 at 4.5V 280 mA
50 50 35
40 40
30
P1dB (dBm)
OIP3 (dBm)
OIP3 (dBm)
30 30
25
-40C
20 20 25C
-40C -40C
25C 25C 85C
85C 85C 20
10 10
0 0 15
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz)
Figure 24. OIP3 vs. Temperature and Frequency Figure 25. OIP3 vs. Temperature and Figure 26. P1dB vs. Temperature and
at Optimal OIP3. Frequency at Optimal P1dB. Frequency at Optimal OIP3.
35 20 25
20
30 15
P1dB (dBm)
GAIN (dB)
GAIN (dB)
15
25 10
-40C -40C -40C
25C 25C 10 25C
85C 85C 85C
20 5
5
15 0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 27. P1dB vs. Temperature and Figure 28. Gain vs. Temperature and Figure 29. Gain vs. Temperature and
Frequency at Optimal P1dB. Frequency at Optimal OIP3. Frequency at Optimal P1dB.
60 100
50
80
40
60
PAE (%)
PAE (%)
30
-40C -40C
25C 40 25C
20 85C 85C
20
10
0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 30. PAE vs. Temperature and Figure 31. PAE vs. Temperature and
Frequency at Optimal OIP3. Frequency at Optimal P1dB.

55 55 35
50 4.5V 50
5.5V 30
3.5V
P1dB (dBm)
OIP3 (dBm)
OIP3 (dBm)
45 45
25
40 40 4.5V
4.5V 5.5V
5.5V 3.5V
3.5V
20
35 35
30 30 15
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA) Ids (mA) Ids (mA)
Figure 32. OIP3 vs. Ids and Vds at 2 GHz. Figure 33. OIP3 vs. Ids and Vds at 900 MHz. Figure 34. P1dB vs. Ids and Vds at 2 GHz.
35 25 25
20 20
30
P1dB (dBm)
15 15
GAIN
GAIN
25
10 10
4.5V
4.5V 4.5V 5.5V
20 5.5V 5.5V 3.5V
3.5V 5 3.5V 5
15 0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 35. P1dB vs. Ids and Vds at 900 MHz. Figure 36. Gain vs. Ids and Vds at 2 GHz. Figure 37. Gain vs. Ids and Vds at 900 MHz.
60 60 50
50 50
40
40 40
OIP3 (dBm)
30
PAE (%)
PAE (%)
30 30
20 -40C
20 4.5V 20 4.5V 25C
5.5V 5.5V 85C
3.5V 3.5V 10
10 10
0 0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 0.5 1 1.5 2 2.5 3 3.5 4
Ids (mA) Ids (mA) FREQUENCY (GHz)
Figure 38. PAE vs. Ids and Vds at 2 GHz. Figure 39. PAE vs. Ids and Vds at 900 MHz. Figure 40. OIP3 vs. Temperature and
Frequency at optimum OIP3.
Note:
Bias current (Ids) for the above charts are quiescent conditions.
Actual level may increase or decrease depending on amount of RF drive.

ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
50 35 35
40
30 30
P1dB (dBm)
OIP3 (dBm)
P1dB (dBm)
30
25 25
20 -40C -40C -40C
25C 25C 25C
85C 20 85C 85C
20
10
0 15 15
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 41. OIP3 vs. Temperature and Figure 42. P1dB vs. Temperature and Figure 43. P1dB vs. Temperature and
Frequency at optimum P1dB. Frequency at optimum OIP3. Frequency at optimum P1dB.
20 25 100
-40C
25C
20 80 85C
15
GAIN (dB)
GAIN (dB)
15 60
PAE (%)
10
-40C 10 -40C 40
25C 25C
5 85C 85C
5 20
0 0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 44. Gain vs. Temperature and Figure 45. Gain vs. Temperature and Figure 46. PAE vs. Temperature and
Frequency at optimum OIP3. Frequency at optimum P1dB. Frequency at optimum OIP3.
100 55 55
-40C
25C 4.5V 4.5V
80 85C 50 50
5.5V 5.5V
3.5V 3.5V
OIP3 (dBm)
OIP3 (dBm)
60 45 45
PAE (%)
40 40 40
20 35 35
0 30 30
0.5 1 1.5 2 2.5 3 3.5 4 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
FREQUENCY (GHz) Ids (mA) Ids (mA)
Figure 47. PAE vs. Temperature and Figure 48. OIP3 vs. Ids and Vds at 2 GHz. Figure 49. OIP3 vs. Ids and Vds at 900 MHz.
Frequency at optimum P1dB.
Note:

Tuned for Optimal P1dB at 4.5V 400 mA
35 35 25
20
30 30
P1dB (dBm)
P1dB (dBm)
15
GAIN
25 25
4.5V 4.5V 10
5.5V 5.5V
3.5V 3.5V
20 20 4.5V
5 5.5V
3.5V
15 15 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 50. P1dB vs. Ids and Vds at 2 GHz. Figure 51. P1dB vs. Ids and Vds at 900 MHz. Figure 52. Gain vs. Ids and Vds at 2 GHz.
30 60 80
50
25
60
40
20
PAE (%)
PAE (%)
GAIN
30 40
15
4.5V 20 4.5V 4.5V
5.5V 5.5V 20 5.5V
10 3.5V 3.5V 3.5V
10
5 0 0
200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640
Figure 53. Gain vs. Ids and Vds at 900 MHz. Figure 54. PAE vs. Ids and Vds at 2 GHz. Figure 55. PAE vs. Ids and Vds at 900 MHz.
Note:
10
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA
Freq. S11 S21 S12 S22 MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.915 -132.3 31.6 37.990 112.2 -38.4 0.012 29.3 0.647 -160.6 35.0 0.173
0.2 0.911 -156.2 26.2 20.324 99.9 -37.7 0.013 24.0 0.689 -171.1 31.9 0.314
0.3 0.910 -165.4 22.8 13.783 94.5 -37.1 0.014 24.5 0.699 -175.7 29.9 0.436
0.4 0.910 -170.9 20.3 10.342 91.1 -37.1 0.014 27.3 0.702 -178.5 28.7 0.569
0.5 0.908 -173.4 18.7 8.604 88.4 -36.5 0.015 29.6 0.691 -179.9 27.6 0.648
0.6 0.907 -176.1 17.1 7.194 86.1 -35.9 0.016 32.4 0.691 178.5 26.5 0.736
0.7 0.908 -178.5 15.8 6.167 84.1 -35.4 0.017 34.4 0.694 177.2 25.6 0.800
0.8 0.905 179.8 14.7 5.407 82.1 -34.9 0.018 36.3 0.695 175.2 24.8 0.871
0.9 0.909 178.2 13.6 4.799 80.3 -34.4 0.019 38.3 0.692 175.1 24.0 0.906
1 0.909 176.6 12.7 4.308 78.3 -34.0 0.020 39.9 0.692 173.9 23.3 0.953
1.5 0.902 170.5 9.1 2.859 70.3 -31.7 0.026 45.0 0.698 169.4 18.2 1.128
2 0.902 166.0 7.1 2.264 64.4 -30.5 0.030 46.9 0.700 165.6 16.0 1.209
2.5 0.901 165.0 6.6 2.134 63.1 -30.2 0.031 47.2 0.699 163.0 15.4 1.241
3 0.901 161.1 5.0 1.772 57.7 -28.9 0.036 47.4 0.697 159.1 13.8 1.278
4 0.898 155.0 3.0 1.412 49.3 -27.3 0.043 46.5 0.707 153.7 11.7 1.326
5 0.902 145.0 0.9 1.110 37.6 -24.7 0.058 43.5 0.699 146.8 9.7 1.272
6 0.893 134.9 -0.9 0.902 22.6 -22.9 0.072 35.6 0.697 145.3 7.8 1.286
7 0.899 125.8 -3.3 0.687 9.0 -22.2 0.078 27.3 0.652 134.1 5.7 1.394
8 0.895 115.6 -4.4 0.604 -1.1 -20.8 0.091 22.0 0.646 117.4 4.2 1.463
9 0.898 105.5 -5.3 0.542 -13.0 -19.6 0.105 12.3 0.641 115.5 3.2 1.447
10 0.886 95.5 -5.9 0.505 -20.2 -18.9 0.114 9.7 0.695 104.5 2.5 1.455
11 0.868 84.7 -6.6 0.469 -29.7 -17.6 0.132 0.5 0.742 91.3 1.6 1.431
12 0.862 74.0 -8.0 0.398 -40.8 -17.4 0.135 -6.3 0.735 88.1 -0.1 1.661
13 0.847 64.5 -7.9 0.403 -47.5 -16.0 0.159 -12.3 0.766 78.4 -0.1 1.491
14 0.844 55.6 -8.5 0.377 -58.4 -15.3 0.171 -21.3 0.800 68.9 -0.3 1.397
15 0.837 47.4 -9.0 0.354 -67.2 -14.6 0.187 -30.1 0.797 65.6 -1.1 1.414
16 0.824 39.9 -9.7 0.327 -72.0 -14.2 0.194 -36.8 0.763 51.5 -2.3 1.608
17 0.821 31.6 -9.8 0.323 -82.7 -13.4 0.215 -44.6 0.786 38.9 -2.4 1.488
18 0.805 24.6 -10.5 0.298 -90.1 -12.5 0.237 -51.8 0.781 29.5 -3.5 1.575
40 Notes:
1. S parameter is measured on a microstrip
30 S21 line made on 0.025 inch thick alumina
MSG
MSG/MAG & |S21|2 (dB)
carrier. The input reference plane is at the

MAG
20 end of the gate lead. The output reference
plane is at the end of the drain lead.
10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 56. MSG/MAG & |S21|2 vs. Frequency at

4.5V 280mA.
11
0.1 0.922 -131.5 31.1 35.978 112.6 -37.7 0.013 28.9 0.664 -159.8 34.4 0.142
0.2 0.914 -155.7 25.7 19.290 100.1 -36.5 0.015 22.4 0.709 -170.7 31.1 0.274
0.3 0.914 -165.2 22.3 13.088 94.7 -36.5 0.015 22.5 0.719 -175.4 29.4 0.390
0.4 0.911 -170.5 19.8 9.814 91.4 -35.9 0.016 24.9 0.722 -178.4 27.9 0.510
0.5 0.911 -173.3 18.3 8.176 88.6 -35.4 0.017 26.8 0.713 -179.9 26.8 0.577
0.6 0.912 -176.0 16.7 6.834 86.4 -34.9 0.018 29.3 0.713 178.6 25.8 0.653
0.7 0.910 -178.3 15.4 5.861 84.3 -34.4 0.019 31.3 0.716 177.2 24.9 0.725
0.8 0.910 179.9 14.2 5.141 82.3 -34.4 0.019 33.0 0.718 175.5 24.3 0.801
0.9 0.913 178.4 13.2 4.558 80.5 -34.0 0.020 34.9 0.712 175.0 23.6 0.840
1 0.910 176.8 12.2 4.092 78.7 -33.6 0.021 36.6 0.714 173.8 22.9 0.903
1.5 0.904 170.5 8.7 2.718 70.5 -31.4 0.027 41.7 0.721 169.0 18.3 1.077
2 0.905 166.1 6.7 2.153 64.9 -30.2 0.031 44.2 0.721 165.2 16.0 1.161
2.5 0.905 165.2 6.1 2.027 63.7 -29.9 0.032 44.5 0.719 162.5 15.4 1.188
3 0.906 161.1 4.5 1.684 58.3 -28.6 0.037 44.9 0.715 158.5 13.7 1.227
4 0.905 154.9 2.6 1.354 50.3 -27.1 0.044 44.3 0.725 152.9 11.8 1.262
5 0.904 145.1 0.4 1.053 38.5 -24.7 0.058 41.6 0.716 145.7 9.5 1.271
6 0.899 134.9 -1.3 0.863 23.9 -22.9 0.072 34.1 0.712 144.1 7.7 1.263
7 0.905 126.0 -3.6 0.661 10.5 -22.2 0.078 26.0 0.660 132.9 5.6 1.371
8 0.902 115.8 -4.6 0.587 0.3 -20.8 0.091 20.8 0.654 116.3 4.2 1.423
9 0.900 106.4 -5.6 0.527 -11.1 -19.6 0.105 11.1 0.649 114.4 3.0 1.451
10 0.894 95.9 -6.1 0.498 -17.7 -18.9 0.114 8.4 0.700 103.4 2.6 1.412
11 0.882 84.9 -7.0 0.448 -26.8 -17.7 0.130 -0.9 0.746 90.5 1.6 1.407
12 0.873 74.3 -8.1 0.393 -38.8 -17.5 0.133 -7.5 0.738 87.3 0.1 1.614
13 0.856 64.6 -8.1 0.393 -45.4 -16.1 0.156 -13.1 0.768 77.8 -0.1 1.492
14 0.853 56.0 -8.4 0.380 -55.0 -15.6 0.166 -21.4 0.800 68.4 -0.2 1.399
15 0.837 47.4 -8.8 0.361 -64.1 -14.8 0.182 -29.6 0.799 65.2 -1.0 1.439
16 0.829 40.6 -9.2 0.345 -72.0 -14.4 0.190 -35.9 0.763 51.1 -1.8 1.556
17 0.828 32.7 -9.5 0.336 -80.5 -13.4 0.213 -43.3 0.787 38.5 -2.0 1.449
18 0.807 26.1 -10.2 0.310 -88.2 -12.5 0.236 -50.5 0.782 29.1 -3.2 1.542
40 Notes:
MSG
MAG carrier. The input reference plane is at the

10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

4.5V 200mA.
12
0.1 0.911 -132.8 31.6 38.110 112.4 -39.2 0.011 30.3 0.649 -162.1 35.4 0.200
0.2 0.910 -156.5 26.2 20.415 100.0 -38.4 0.012 24.9 0.692 -171.8 32.3 0.340
0.3 0.911 -165.8 22.8 13.848 94.6 -37.7 0.013 26.2 0.701 -176.2 30.3 0.472
0.4 0.913 -171.1 20.3 10.397 91.3 -37.7 0.013 28.9 0.704 -178.9 29.0 0.600
0.5 0.907 -173.7 18.7 8.640 88.5 -36.5 0.015 31.8 0.693 179.7 27.6 0.679
0.6 0.910 -176.3 17.2 7.232 86.2 -35.9 0.016 34.5 0.694 178.2 26.6 0.747
0.7 0.910 -178.6 15.8 6.200 84.2 -35.9 0.016 36.8 0.696 176.9 25.9 0.838
0.8 0.906 179.7 14.7 5.431 82.2 -35.4 0.017 38.8 0.697 175.6 25.0 0.914
0.9 0.913 178.0 13.7 4.826 80.3 -34.9 0.018 40.6 0.695 174.8 24.3 0.930
1 0.907 176.4 12.7 4.328 78.4 -34.0 0.020 42.3 0.694 173.7 23.4 0.984
1.5 0.904 170.3 9.2 2.878 70.4 -32.0 0.025 47.0 0.698 169.4 18.2 1.154
2 0.906 165.9 7.1 2.275 64.5 -30.5 0.030 48.7 0.702 165.5 16.1 1.193
2.5 0.904 164.8 6.6 2.146 63.2 -30.2 0.031 49.0 0.701 162.8 15.5 1.231
3 0.907 160.9 5.0 1.783 57.9 -28.9 0.036 49.0 0.699 159.0 14.0 1.246
4 0.906 154.7 3.1 1.424 49.4 -27.3 0.043 47.7 0.708 153.6 12.0 1.275
5 0.903 144.8 0.9 1.114 37.7 -24.7 0.058 44.2 0.701 146.7 9.7 1.268
6 0.896 134.7 -0.8 0.907 22.7 -22.7 0.073 36.2 0.699 145.1 7.9 1.256
7 0.903 125.6 -3.2 0.691 8.9 -22.2 0.078 27.9 0.654 134.0 5.9 1.355
8 0.903 115.0 -4.3 0.612 -1.0 -20.7 0.092 22.4 0.647 117.3 4.6 1.375
9 0.891 105.6 -5.3 0.544 -13.3 -19.5 0.106 12.8 0.642 115.4 2.9 1.495
10 0.885 94.9 -6.0 0.504 -20.0 -18.8 0.115 10.2 0.697 104.4 2.4 1.462
11 0.873 84.3 -6.7 0.465 -28.4 -17.5 0.133 0.9 0.743 91.3 1.6 1.416
12 0.866 74.0 -7.9 0.403 -41.1 -17.3 0.137 -5.8 0.735 87.9 0.1 1.607
13 0.849 64.3 -7.8 0.406 -47.3 -15.9 0.161 -12.1 0.768 78.3 0.0 1.464
14 0.849 55.7 -8.4 0.379 -57.9 -15.2 0.174 -21.3 0.801 68.8 -0.2 1.361
15 0.841 46.6 -9.0 0.353 -69.0 -14.5 0.189 -30.3 0.800 65.5 -0.9 1.376
16 0.828 39.0 -9.4 0.337 -73.1 -14.2 0.196 -37.1 0.763 51.4 -2.0 1.547
17 0.817 31.0 -9.8 0.322 -83.0 -13.2 0.218 -45.1 0.787 38.7 -2.4 1.491
18 0.809 23.9 -10.3 0.304 -92.7 -12.4 0.240 -52.4 0.783 29.3 -3.2 1.513
40 Notes:
MSG

10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

4.5V 360mA.
13
0.1 0.923 -133.9 30.6 34.047 111.6 -38.4 0.012 28.8 0.716 -164.7 34.5 0.166
0.2 0.922 -157.1 25.2 18.161 99.7 -37.7 0.013 23.8 0.759 -173.4 31.5 0.301
0.3 0.920 -166.1 21.8 12.313 94.5 -37.1 0.014 25.0 0.767 -177.3 29.4 0.427
0.4 0.920 -171.3 19.3 9.220 91.4 -37.1 0.014 27.5 0.770 -179.8 28.2 0.549
0.5 0.915 -173.9 17.7 7.674 88.7 -35.9 0.016 30.0 0.760 178.8 26.8 0.622
0.6 0.917 -176.5 16.2 6.429 86.6 -35.4 0.017 32.9 0.761 177.2 25.8 0.697
0.7 0.917 -178.9 14.8 5.511 84.6 -34.9 0.018 34.8 0.762 175.8 24.9 0.761
0.8 0.915 179.6 13.6 4.813 82.8 -34.9 0.018 37.2 0.760 175.0 24.3 0.843
0.9 0.918 177.7 12.7 4.302 81.0 -34.4 0.019 38.8 0.764 173.7 23.5 0.877
1 0.913 176.4 11.7 3.850 79.1 -33.6 0.021 40.5 0.759 172.4 22.6 0.930
1.5 0.913 170.4 8.1 2.555 72.0 -31.4 0.027 45.6 0.759 168.1 18.1 1.070
2 0.913 166.1 6.1 2.025 66.3 -30.2 0.031 47.1 0.763 163.9 15.9 1.139
2.5 0.910 164.8 5.6 1.912 65.1 -29.9 0.032 47.6 0.762 161.0 15.2 1.181
3 0.913 160.9 4.0 1.588 60.4 -28.6 0.037 47.5 0.758 156.7 13.6 1.206
4 0.906 154.6 2.1 1.276 52.2 -26.9 0.045 45.9 0.762 150.9 11.5 1.261
5 0.910 144.7 0.1 1.012 41.6 -24.4 0.060 42.4 0.754 143.3 9.4 1.226
6 0.903 134.6 -1.6 0.827 27.2 -22.5 0.075 34.3 0.742 141.3 7.5 1.239
7 0.907 125.4 -3.9 0.636 14.0 -22.0 0.079 25.3 0.674 130.1 5.3 1.402
8 0.903 115.2 -4.9 0.570 5.1 -20.6 0.093 19.8 0.669 113.5 3.9 1.448
9 0.897 105.5 -5.6 0.522 -7.0 -19.4 0.107 9.9 0.666 112.0 2.8 1.484
10 0.889 94.8 -6.0 0.499 -14.5 -18.8 0.115 7.0 0.709 100.9 2.4 1.458
11 0.880 84.2 -6.4 0.477 -23.6 -17.7 0.131 -2.4 0.754 88.2 1.9 1.378
12 0.870 73.4 -7.7 0.411 -33.8 -17.6 0.132 -9.1 0.745 85.0 0.3 1.614
13 0.847 63.8 -7.5 0.421 -41.1 -16.3 0.153 -14.5 0.770 75.9 0.1 1.519
14 0.839 55.1 -8.0 0.397 -52.2 -15.8 0.163 -22.5 0.801 66.5 -0.1 1.458
15 0.816 47.3 -8.2 0.390 -63.9 -15.0 0.178 -30.0 0.795 63.4 -0.8 1.495
16 0.808 39.8 -9.2 0.345 -70.3 -14.6 0.186 -35.9 0.755 49.5 -2.3 1.727
17 0.794 32.3 -9.0 0.354 -81.5 -13.5 0.211 -43.3 0.787 36.6 -2.1 1.538
18 0.769 26.0 -9.7 0.329 -91.7 -12.6 0.234 -50.7 0.777 27.7 -3.2 1.632
40 Notes:
MSG

MAG
10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

3.5V 280mA.
14
0.1 0.924 -132.7 30.5 33.400 112.1 -37.1 0.014 28.4 0.703 -162.3 33.8 0.150
0.2 0.919 -156.5 25.0 17.862 99.9 -36.5 0.015 22.1 0.749 -172.1 30.8 0.269
0.3 0.918 -165.7 21.7 12.118 94.6 -36.5 0.015 22.7 0.757 -176.5 29.1 0.390
0.4 0.918 -171.0 19.2 9.080 91.4 -35.9 0.016 24.6 0.760 -179.2 27.5 0.496
0.5 0.918 -173.6 17.6 7.556 88.7 -35.4 0.017 26.4 0.751 179.4 26.5 0.559
0.6 0.915 -176.2 16.0 6.328 86.5 -34.9 0.018 29.3 0.752 177.7 25.5 0.651
0.7 0.915 -178.5 14.7 5.422 84.5 -34.4 0.019 31.3 0.753 176.3 24.6 0.717
0.8 0.914 179.8 13.5 4.739 82.7 -34.0 0.020 33.2 0.752 175.3 23.7 0.777
0.9 0.919 178.0 12.5 4.232 80.8 -33.6 0.021 35.1 0.755 174.1 23.0 0.806
1 0.916 176.7 11.6 3.788 79.0 -33.2 0.022 36.7 0.750 172.8 22.4 0.870
1.5 0.912 170.5 8.0 2.515 71.5 -31.4 0.027 42.0 0.750 168.3 18.2 1.057
1.9 0.911 166.0 6.0 1.991 65.8 -29.9 0.032 44.3 0.755 165.0 15.8 1.126
2 0.910 164.9 5.5 1.882 64.7 -29.6 0.033 44.7 0.753 164.2 15.2 1.157
2.4 0.911 160.9 3.9 1.562 59.7 -28.6 0.037 45.0 0.750 161.3 13.5 1.215
3 0.909 154.7 2.0 1.255 51.5 -26.9 0.045 43.9 0.754 157.0 11.5 1.244
4 0.911 144.8 -0.1 0.988 40.4 -24.4 0.060 41.0 0.746 151.3 9.3 1.225
5 0.902 134.8 -1.8 0.813 25.9 -22.6 0.074 33.3 0.735 143.7 7.4 1.255
6 0.904 125.5 -4.1 0.624 12.7 -22.0 0.079 24.6 0.669 141.8 5.0 1.438
7 0.904 115.6 -5.1 0.555 3.9 -20.6 0.093 19.3 0.664 130.6 3.8 1.455
8 0.901 105.6 -5.9 0.509 -8.3 -19.4 0.107 9.5 0.662 113.9 2.7 1.466
9 0.897 95.4 -6.4 0.477 -14.5 -18.8 0.115 6.6 0.705 112.3 2.3 1.437
10 0.880 84.1 -6.9 0.450 -23.9 -17.7 0.130 -3.0 0.751 101.2 1.5 1.429
11 0.872 73.7 -8.1 0.393 -34.0 -17.6 0.132 -9.7 0.742 88.5 0.0 1.646
12 0.849 64.2 -7.8 0.408 -42.5 -16.4 0.152 -14.9 0.767 85.3 0.0 1.539
13 0.841 55.5 -8.2 0.391 -53.2 -15.8 0.162 -22.8 0.798 76.2 -0.2 1.465
14 0.820 47.1 -8.5 0.377 -63.5 -15.1 0.176 -29.9 0.793 66.8 -1.0 1.527
15 0.809 39.3 -9.0 0.354 -69.5 -14.7 0.185 -35.9 0.754 63.6 -2.1 1.708
16 0.794 32.7 -9.1 0.350 -84.1 -13.6 0.210 -43.1 0.785 49.8 -2.1 1.543
17 0.770 25.8 -9.6 0.332 -89.0 -12.6 0.234 -50.5 0.776 36.9 -3.1 1.634
18 0.766 21.5 -9.2 0.346 -99.8 -11.5 0.266 -60.7 0.797 28.0 -2.6 1.394
40 Notes:
S21
30
MSG
line made on 0.025 inch thick alumina

10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

3.5V 200mA.
15
0.1 0.919 -134.2 30.8 34.576 111.7 -39.2 0.011 29.6 0.722 -166.1 35.0 0.191
0.2 0.920 -157.3 25.3 18.445 99.7 -38.4 0.012 25.5 0.763 -174.1 31.9 0.336
0.3 0.921 -166.4 21.9 12.499 94.6 -37.7 0.013 26.7 0.771 -177.8 29.8 0.460
0.4 0.918 -171.4 19.4 9.372 91.5 -37.7 0.013 30.0 0.773 179.8 28.6 0.599
0.5 0.915 -174.0 17.8 7.792 88.8 -36.5 0.015 32.7 0.763 178.6 27.2 0.665
0.6 0.916 -176.7 16.3 6.537 86.6 -35.9 0.016 35.7 0.765 176.9 26.1 0.744
0.7 0.916 -178.9 15.0 5.596 84.7 -35.4 0.017 37.9 0.765 175.6 25.2 0.809
0.8 0.914 179.4 13.8 4.888 83.1 -34.9 0.018 40.0 0.764 174.9 24.3 0.871
0.9 0.919 178.1 12.8 4.370 81.1 -34.4 0.019 41.8 0.768 173.4 23.6 0.892
1 0.914 176.2 11.8 3.911 79.3 -34.0 0.020 43.0 0.762 172.2 22.9 0.963
1.5 0.912 170.2 8.3 2.596 72.2 -31.7 0.026 47.8 0.761 168.1 18.0 1.103
2 0.914 165.8 6.3 2.059 66.7 -30.2 0.031 49.2 0.766 163.8 15.9 1.142
2.5 0.910 164.7 5.8 1.940 65.6 -29.9 0.032 49.3 0.765 160.9 15.2 1.185
3 0.912 160.8 4.2 1.618 60.7 -28.6 0.037 49.0 0.761 156.6 13.6 1.210
4 0.913 154.4 2.3 1.296 52.9 -26.9 0.045 47.3 0.765 150.8 11.8 1.221
5 0.908 144.7 0.2 1.023 42.0 -24.4 0.060 43.2 0.756 143.0 9.4 1.236
6 0.903 134.5 -1.5 0.844 27.9 -22.5 0.075 34.8 0.745 141.1 7.6 1.233
7 0.906 125.5 -3.8 0.647 15.0 -21.9 0.080 25.7 0.676 129.9 5.3 1.392
8 0.904 115.1 -4.7 0.582 5.9 -20.6 0.093 20.3 0.670 113.3 4.1 1.430
9 0.902 105.3 -5.5 0.532 -6.4 -19.4 0.107 10.3 0.666 111.6 3.1 1.433
10 0.893 95.0 -5.8 0.513 -13.3 -18.8 0.115 7.5 0.710 100.7 2.7 1.416
11 0.881 84.1 -6.5 0.474 -22.0 -17.7 0.131 -1.9 0.756 88.2 1.9 1.388
12 0.873 73.6 -7.6 0.417 -32.9 -17.5 0.133 -8.5 0.746 84.9 0.5 1.577
13 0.847 63.9 -7.5 0.424 -40.6 -16.2 0.154 -13.9 0.772 75.7 0.2 1.507
14 0.844 55.4 -7.8 0.407 -52.7 -15.7 0.165 -22.0 0.802 66.3 0.1 1.407
15 0.827 47.4 -8.2 0.389 -63.7 -14.9 0.180 -29.7 0.793 63.2 -0.7 1.457
16 0.818 40.2 -8.9 0.357 -67.9 -14.6 0.187 -35.8 0.759 49.4 -1.9 1.637
17 0.799 32.9 -9.0 0.353 -81.4 -13.5 0.211 -43.1 0.786 36.5 -2.0 1.526
18 0.780 26.7 -9.3 0.344 -90.7 -12.5 0.236 -50.4 0.777 27.6 -2.7 1.549
40 Notes:
MSG

10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

3.5V 360mA.
16
0.1 0.914 -131.5 31.8 39.087 112.6 -38.4 0.012 29.6 0.618 -158.7 35.1 0.172
0.2 0.912 -155.7 26.4 20.961 100.1 -37.7 0.013 23.9 0.661 -170.0 32.1 0.307
0.3 0.914 -165.2 23.1 14.228 94.5 -37.1 0.014 24.1 0.670 -174.9 30.1 0.420
0.4 0.913 -170.5 20.6 10.678 91.1 -37.1 0.014 26.7 0.674 -177.9 28.8 0.550
0.5 0.909 -173.3 19.0 8.871 88.3 -36.5 0.015 29.0 0.662 -179.3 27.7 0.638
0.6 0.910 -176.0 17.4 7.417 86.0 -35.9 0.016 31.7 0.663 179.2 26.7 0.715
0.7 0.911 -178.2 16.1 6.365 83.9 -35.4 0.017 34.3 0.666 177.8 25.7 0.782
0.8 0.908 -179.8 14.9 5.577 81.8 -34.9 0.018 36.0 0.667 176.3 24.9 0.850
0.9 0.913 178.4 13.9 4.956 79.9 -34.4 0.019 38.0 0.664 175.7 24.2 0.878
1 0.907 176.7 13.0 4.446 78.0 -34.0 0.020 39.4 0.664 174.5 23.5 0.958
1.5 0.903 170.5 9.4 2.951 69.6 -32.0 0.025 44.5 0.672 170.1 18.4 1.141
2 0.905 166.2 7.4 2.331 63.5 -30.5 0.030 46.4 0.674 166.5 16.3 1.182
2.5 0.903 165.2 6.8 2.197 62.1 -30.2 0.031 47.0 0.674 164.0 15.7 1.222
3 0.903 161.0 5.2 1.822 56.7 -29.1 0.035 47.3 0.672 160.3 14.0 1.284
4 0.900 154.7 3.3 1.455 47.9 -27.3 0.043 46.7 0.685 155.2 12.0 1.307
5 0.902 145.0 1.1 1.129 35.9 -24.9 0.057 43.8 0.679 148.6 9.8 1.278
6 0.895 134.9 -0.8 0.916 20.6 -23.0 0.071 36.2 0.681 147.0 8.0 1.271
7 0.903 125.8 -3.2 0.695 6.8 -22.3 0.077 28.3 0.648 135.8 6.1 1.340
8 0.898 115.4 -4.2 0.616 -3.5 -20.8 0.091 22.9 0.641 119.2 4.5 1.401
9 0.898 105.8 -5.3 0.546 -16.3 -19.6 0.105 13.3 0.636 117.2 3.3 1.416
10 0.884 95.4 -6.0 0.499 -23.2 -18.9 0.114 10.9 0.694 106.2 2.4 1.459
11 0.871 84.6 -6.8 0.458 -31.5 -17.6 0.132 1.6 0.741 92.7 1.6 1.420
12 0.864 74.2 -8.3 0.386 -43.6 -17.3 0.137 -5.2 0.731 89.5 -0.2 1.655
13 0.849 64.8 -8.3 0.385 -49.9 -15.8 0.162 -11.5 0.768 79.6 -0.3 1.479
14 0.854 56.1 -8.7 0.366 -60.4 -15.2 0.174 -20.9 0.804 70.2 -0.2 1.332
15 0.841 47.7 -9.6 0.330 -68.9 -14.4 0.191 -29.9 0.807 66.7 -1.3 1.385
16 0.834 40.0 -10.0 0.317 -73.5 -14.1 0.198 -37.0 0.768 52.4 -2.3 1.536
17 0.824 31.9 -10.2 0.310 -83.2 -13.2 0.219 -45.0 0.792 39.7 -2.5 1.466
18 0.813 24.7 -10.7 0.291 -88.9 -12.4 0.240 -52.2 0.788 30.0 -3.5 1.533
40 Notes:
MSG

MAG
10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

5.5V 280mA.
17
0.1 0.921 -130.1 31.8 38.725 113.1 -37.7 0.013 29.6 0.615 -156.5 34.7 0.145
0.2 0.914 -155.0 26.4 20.822 100.3 -37.1 0.014 22.8 0.659 -168.9 31.7 0.274
0.3 0.914 -164.6 23.0 14.136 94.7 -36.5 0.015 22.7 0.669 -174.1 29.7 0.385
0.4 0.913 -170.1 20.5 10.611 91.3 -36.5 0.015 24.9 0.673 -177.3 28.5 0.510
0.5 0.909 -172.9 18.9 8.824 88.4 -35.4 0.017 26.8 0.662 -178.9 27.2 0.576
0.6 0.909 -175.7 17.4 7.375 86.0 -35.4 0.017 29.4 0.662 179.6 26.4 0.672
0.7 0.909 -178.1 16.0 6.329 83.9 -34.9 0.018 31.3 0.665 178.2 25.5 0.739
0.8 0.908 -179.7 14.9 5.549 81.8 -34.4 0.019 32.9 0.667 176.5 24.7 0.798
0.9 0.911 178.5 13.8 4.922 80.0 -34.0 0.020 35.3 0.662 176.0 23.9 0.843
1 0.909 176.8 12.9 4.418 78.0 -33.6 0.021 36.4 0.664 174.8 23.2 0.897
1.5 0.905 170.8 9.3 2.933 69.4 -31.7 0.026 41.7 0.673 170.3 18.8 1.079
2 0.907 166.3 7.3 2.322 63.4 -30.5 0.030 44.3 0.674 166.6 16.5 1.153
2.5 0.903 165.3 6.8 2.182 62.1 -30.2 0.031 44.5 0.673 164.1 15.7 1.208
3 0.906 161.2 5.2 1.815 56.5 -28.9 0.036 45.1 0.671 160.4 14.2 1.226
4 0.903 155.0 3.2 1.447 47.8 -27.3 0.043 44.7 0.684 155.3 12.1 1.273
5 0.904 145.1 1.0 1.123 35.9 -24.9 0.057 42.3 0.678 148.7 9.9 1.257
6 0.899 135.2 -0.8 0.909 20.3 -23.0 0.071 35.1 0.681 147.2 8.2 1.235
7 0.904 126.2 -3.2 0.693 6.5 -22.4 0.076 27.4 0.647 136.0 6.2 1.332
8 0.901 115.6 -4.3 0.608 -4.0 -20.9 0.090 22.2 0.640 119.4 4.6 1.386
9 0.896 106.2 -5.4 0.536 -15.9 -19.7 0.104 12.6 0.634 117.5 3.1 1.459
10 0.891 95.4 -6.1 0.497 -23.9 -18.9 0.113 10.2 0.692 106.3 2.6 1.408
11 0.877 85.0 -7.0 0.446 -32.3 -17.7 0.131 1.0 0.739 92.9 1.5 1.403
12 0.871 74.4 -8.3 0.386 -42.5 -17.4 0.135 -5.8 0.730 89.7 -0.1 1.625
13 0.851 64.9 -8.2 0.387 -49.0 -15.9 0.160 -11.8 0.767 79.8 -0.3 1.480
14 0.850 56.2 -8.8 0.364 -60.0 -15.3 0.172 -21.0 0.803 70.5 -0.3 1.364
15 0.839 48.0 -9.5 0.335 -67.9 -14.5 0.188 -29.9 0.805 66.9 -1.3 1.403
16 0.834 39.7 -10.2 0.309 -72.5 -14.2 0.195 -36.8 0.768 52.7 -2.5 1.585
17 0.827 32.2 -10.2 0.309 -82.4 -13.3 0.216 -44.6 0.792 39.9 -2.5 1.472
18 0.814 24.4 -10.5 0.298 -89.4 -12.5 0.238 -51.8 0.790 30.2 -3.2 1.510
40 Notes:
MSG

MAG
10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

5.5V 200mA.
18
0.1 0.904 -132.0 31.8 38.785 113.0 -39.2 0.011 29.8 0.619 -159.9 35.5 0.198
0.2 0.910 -156.2 26.4 20.860 100.3 -38.4 0.012 24.8 0.662 -170.6 32.4 0.338
0.3 0.912 -165.4 23.0 14.161 94.7 -37.7 0.013 25.5 0.672 -175.3 30.4 0.459
0.4 0.912 -170.7 20.5 10.635 91.2 -37.1 0.014 27.8 0.675 -178.2 28.8 0.571
0.5 0.907 -173.5 18.9 8.834 88.4 -36.5 0.015 30.5 0.663 -179.5 27.7 0.666
0.6 0.909 -176.1 17.4 7.399 86.1 -35.9 0.016 33.4 0.664 178.9 26.7 0.741
0.7 0.909 -178.3 16.0 6.337 83.9 -35.4 0.017 35.7 0.666 177.6 25.7 0.808
0.8 0.907 179.9 14.9 5.557 81.9 -35.4 0.017 37.6 0.668 176.2 25.1 0.901
0.9 0.909 178.4 13.9 4.942 80.0 -34.9 0.018 39.7 0.665 175.5 24.4 0.943
1 0.906 176.7 12.9 4.429 78.0 -34.4 0.019 41.2 0.665 174.3 23.7 1.008
1.5 0.904 170.5 9.4 2.941 69.7 -32.0 0.025 46.2 0.672 170.1 18.4 1.150
2 0.904 166.1 7.3 2.325 63.6 -30.8 0.029 47.9 0.676 166.5 16.2 1.225
2.5 0.900 165.1 6.8 2.191 62.2 -30.2 0.031 48.4 0.675 163.9 15.5 1.254
3 0.905 161.0 5.2 1.817 56.6 -29.1 0.035 48.6 0.674 160.2 14.0 1.278
4 0.900 155.0 3.3 1.456 48.2 -27.5 0.042 47.4 0.686 155.1 12.0 1.329
5 0.904 144.9 1.1 1.130 35.7 -24.9 0.057 44.4 0.680 148.5 9.9 1.267
6 0.897 134.8 -0.8 0.913 20.7 -23.0 0.071 36.8 0.683 146.9 8.0 1.264
7 0.902 125.7 -3.2 0.695 7.3 -22.3 0.077 28.9 0.649 135.8 6.0 1.359
8 0.899 115.5 -4.3 0.609 -3.7 -20.8 0.091 23.4 0.643 119.1 4.5 1.402
9 0.893 105.9 -5.3 0.544 -16.0 -19.6 0.105 13.8 0.636 117.1 3.1 1.470
10 0.886 95.4 -6.0 0.499 -23.1 -18.9 0.114 11.7 0.696 106.1 2.4 1.447
11 0.867 85.0 -6.8 0.455 -31.7 -17.5 0.133 2.3 0.743 92.6 1.4 1.439
12 0.871 75.0 -8.2 0.389 -43.4 -17.2 0.138 -4.6 0.732 89.3 0.0 1.589
13 0.854 65.6 -8.2 0.387 -49.9 -15.7 0.164 -11.0 0.769 79.4 -0.2 1.436
14 0.855 56.8 -8.9 0.360 -61.2 -15.1 0.176 -20.4 0.805 70.0 -0.3 1.323
15 0.845 48.1 -9.6 0.330 -68.7 -14.3 0.192 -29.6 0.806 66.4 -1.3 1.371
16 0.842 40.7 -10.0 0.315 -72.5 -14.0 0.199 -36.7 0.769 52.1 -2.2 1.502
17 0.833 32.6 -10.2 0.309 -82.1 -13.2 0.220 -44.6 0.792 39.4 -2.4 1.436
18 0.826 25.5 -10.5 0.299 -87.9 -12.3 0.242 -51.8 0.789 29.7 -3.1 1.457
40 Notes:
MSG

MAG
10
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)

5.5V 360mA.
19
Device Models
Refer to Avago’s Web Site
www.Avagotech.com/view/rf
ATF-501P8-TR1 3000 7” Reel
ATF-501P8-TR2 10000 13”Reel
ATF-501P8-BLK 100 antistatic bag
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions

D1
D
P pin1
pin1
1 8
2 7
E1
R
e
3
0PX 6
E
4 5
L b
Bottom View Top View
A A1 A
A2
End View End View
DIMENSIONS
SYMBOL MIN. NOM. MAX.

A 0.70 0.75 0.80
A1 0 0.02 0.05
A2 0.203 REF 0.203 REF 0.203 REF
b 0.225 0.25 0.275
D 1.9 2.0 2.1
D1 0.65 0.80 0.95
E 1.9 2.0 2.1
E1 1.45 1.6 1.75
e 0.50 BSC 0.50 BSC 0.50 BSC
P 0.2 0.25 0.3
L 0.4 REF
DIMENSIONS ARE IN MILLIMETERS
20
PCB Land Pattern and Stencil Design
2.80 (110.24) 2.72 (107.09)
0.70 (27.56) 0.63 (24.80)
0.25 (9.84) 0.22 (8.86)
0.25 (9.84) 0.32 (12.79)

PIN 1 PIN 1
f0.20 (7.87) 0.50 (19.68) 0.50 (19.68)

1.60 (62.99) 1.54 (60.61)
Solder + 0.28 (10.83) 0.25 (9.74)
mask
RF 0.60 (23.62) 0.72 (28.35) 0.63 (24.80)

transmission 0.80 (31.50)
line
0.15 (5.91)
0.55 (21.65)
PCB Land Pattern (top view) Stencil Layout (top view)
Notes:
Typical stencil thickness is 5 mils.
Measurements are in millimeters (mils).
Device Orientation
REEL 4 mm
8 mm
0PX 0PX 0PX 0PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
21
Tape Dimensions
P P0 P2
D
F
W
+ +
D1
t1 Tt
K0
10 Max 10 Max
A0 B0
DESCRIPTION SYMBOL SIZE (mm) SIZE (inches)
CAVITY LENGTH A0 2.30 ± 0.05 0.091 ± 0.004

WIDTH B0 2.30 ± 0.05 0.091 ± 0.004
DEPTH K0 1.00 ± 0.05 0.039 ± 0.002
PITCH P 4.00 ± 0.10 0.157 ± 0.004
PERFORATION DIAMETER D 1.50 ± 0.10 0.060 ± 0.004

PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004
CARRIER TAPE WIDTH W 8.00 + 0.30 0.315 ± 0.012

8.00 – 0.10 0.315 ± 0.004
THICKNESS t1 0.254 ± 0.02 0.010 ± 0.0008
COVER TAPE WIDTH C 5.4 ± 0.10 0.205 ± 0.004


(WIDTH DIRECTION)
(LENGTH DIRECTION)
AV02-1846EN - March 27, 2009
ATF-511P8 High Linearity Enhancement
Mode [1] Pseudomorphic HEMT in
2x2 mm2 LPCC [3] Package
Data Sheet
Avago Technologies’s ATF-511P8 is a single-voltage • Single voltage operation
high linearity, low noise E-pHEMT housed in an 8-lead • High linearity and P1dB
JEDEC-standard leadless plastic chip carrier
(LPCC [3]) package. The device is ideal as a high • Low noise figure
linearity, low-noise, medium-power amplifier. Its • Excellent uniformity in product specifications
operating frequency range is from 50 MHz to 6 GHz.
• Small package size:
2.0 x 2.0 x 0.75 mm
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides • Point MTTF > 300 years [2]
excellent thermal dissipation as well as visual evi- • MSL-1 and lead-free
dence of solder reflow. The device has a Point MTTF
of over 300 years at a mounting temperature of +85° C. • Tape-and-reel packaging option available
All devices are 100% RF & DC tested.
Notes:
Specifications
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with 2 GHz; 4.5V, 200 mA (Typ.)
conventional depletion mode devices. • 41.7 dBm output IP3
3. Conforms to JEDEC reference outline MO229 for DRP-N. • 30 dBm output power at 1 dB gain compression
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias
• 1.4 dB noise figure
power.
• 14.8 dB gain
• 12.1 dB LFOM [4]
• 69% PAE
(Thermal/RF Gnd)

Source
Pin 7 (Drain) Pin 2 (Gate) Applications

Pin 6 Pin 3 • Front-end LNA Q2 and Q3 driver or pre-driver amplifier for
Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL and MMDS
Bottom View applications
Pin 1 (Source) Pin 8 • General purpose discrete E-pHEMT for other high linearity
applications
Pin 3
1Px Pin 6
Top View
Note:
Package marking provides orientation and identification:
“1P” = Device Code
“x” = Date code indicates the month of manufacture.
Notes:
Absolute
1. Operation of this device in excess of any one
Symbol Parameter Units Maximum of these parameters may cause permanent
damage.
VDS Drain–Source Voltage[2] V 7
VGS Gate–Source Voltage[2] V -5 to 1 3. Board (package belly) temperatureTB is 25°C.
Derate 30 mW/°C for TB > 50°C.
VGD Gate Drain Voltage[2] V -5 to 1
4. With 10 Ohm series resistor in gate supply
IDS Drain Current[2] A 1 and 3:1 VSWR.
5. Channel-to-board thermal resistance
Pdiss Total Power Dissipation[3] W 3 Measurement method.
6. Device can safely handle +30dBm RF Input
Pin max. RF Input Power[4] dBm +30
Power provided IGS limited to 46mA. IGS at
TCH Channel Temperature °C 150 P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [6,7]

1000 240 200
0.8 V
900 Cpk = 1.66 Cpk = 3.24
200 Stdev = 0.6 Stdev = 0.15
800 160
0.7 V
700 160
600 120
IDS (mA)

500 120
0.6 V
400 80
80
300
200 40
40
0.5 V
100
0 0 0
0 2 4 6 8 35 38 41 44 47 28 29 30 31
VDS (V) OIP3 (dBm) P1dB (dBm)
Figure 1. Typical I-V Curves Figure 2. OIP3 Figure 3. P1dB

(Vgs = 0.1 per step). LSL = 38.5, Nominal = 41.7. LSL = 28.5, Nominal = 30.
150 160
Cpk = 1.4 Cpk = 3.03
120 Stdev = 0.31 Stdev = 1.85
120
90
80
60
40
30
0 0
13 14 15 16 17 52 57 62 67 72 77 82
GAIN (dB) PAE (%)
Figure 4. Gain Figure 5. PAE

LSL = 13.5, Nominal = 14.8, USL = 16.5. LSL = 52, Nominal = 68.9.
Notes:
6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
7. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
Gm Transconductance Vds = 4.5V, Gm = ∆Idss/∆Vgs; mmho — 2178 —
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -27 -2 —
f = 900 MHz dB — 1.2 —
G Gain[1] f = 2 GHz dB 13.5 14.8 16.5
f = 900 MHz dB — 17.8 —
OIP3 Output 3rd Order Intercept Point [1,2] f = 2 GHz dBm 38.5 41.7 —
f = 900 MHz dBm — 43 —
P1dB Output 1dB Compressed [1] f = 2 GHz dBm 28.5 30 —
f = 900 MHz dBm — 29.6 —
PAE Power Added Efficiency f = 2 GHz % 52 68.9 —
f = 900 MHz % — 68.6 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — -58.9 —
Power Ratio [1,3] Offset BW = 10 MHz dBc — -62.7 —
Notes:
1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.
- Test Model 1
- Freq = 2140 MHz
- Pin = -5 dBm
4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note for more details.
Input 50 Ohm Input Output 50 Ohm Output

Transmission Matching Circuit Matching Circuit Transmission
Line and Γ_mag = 0.69 DUT Γ_mag = 0.65 Line and
Gate Bias T Γ_ang = -164° Γ_ang = -163° Drain Bias T
(0.3 dB loss) (1.1 dB loss) (0.9 dB loss) (0.3 dB loss)
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
1.8 nH 2.7 nH

1.2 pF .02 λ .03 λ .03 λ .02 λ 1.2 pF
15 nH 47 nH
15 Ohm
2.2 µF
2.2 µF Drain
DC Supply
Gate
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
200 mA quiesent bias:
Optimum OIP3

(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.776 152 0.549 -178 43.3 17.94 29.63 63.8
2.0 0.872 -171 0.683 -179 43.1 15.06 30.12 66.8
2.4 0.893 -162 0.715 -174 42.8 14.03 29.90 64.5
3.9 0.765 -132 0.574 -144 41.7 9.47 29.02 52
Optimum P1dB

0.9 0.773 153 0.784 -173 38.0 19.28 31.9 54.23
2.0 0.691 147 0.841 -166 36.4 10.34 31.4 38.15
2.4 0.797 164 0.827 -166 36.2 8.43 31.2 37.38
3.9 0.602 -163 0.794 -155 35.4 7.03 31 32.72
4
50 50 35
45 45
30
40 40
P1dB (dBm)
OIP3 (dBm)
35
OIP3 (dBm)
35 25
30 30
20
25 25
4.5 V 4.5 V 4.5 V
20 4V 20 4V 4V
3V 15
3V 3V
15 15
10 10 10
50 150 250 350 450 550 50 150 250 350 450 550 50 150 250 350 450 550
IDS (mA) IDS (mA) IDS (mA)
Figure 8. OIP3 vs. IDS and VDS at 2 GHz. Figure 9. OIP3 vs. IDS and VDS at 900 MHz. Figure 10. P1dB vs. IDS and VDS at 2 GHz.
35 17 20
16 19
30
15 18
P1dB (dBm)
GAIN (dB)
GAIN (dB)
25 17
14
13 16
20
4.5 V 12 4.5 V 15 4.5 V
4V 4V 4V
15 3V 3V 3V
11 14
10 10 13
50 150 250 350 450 550 50 150 250 350 450 550 50 150 250 350 450 550
Figure 11. P1dB vs. IDS and VDS at 900 MHz. Figure 12. Gain vs. IDS and VDS at 2 GHz. Figure 13. Gain vs. IDS and VDS at 900 MHz.
80 80 50
70 70
45
60 60
40
OIP3 (dBm)
50 50
PAE (%)
PAE (%)
40 40 35
30 30
30 -40 °C
4.5 V 4.5 V
20 20 25 °C
4V 4V
85 °C
3V 3V 25
10 10
0 0 20
50 150 250 350 450 550 50 150 250 350 450 550 0.5 1 1.5 2 2.5 3 3.5 4
IDS (mA) IDS (mA) FREQUENCY (GHz)
Figure 14. PAE vs. IDS and VDS at 2 GHz. Figure 15. PAE vs. IDS and VDS at 900 MHz. Figure 16. OIP3 vs. Temp and Freq.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
5
Tuned for Optimal OIP3 at 4.5V, 200 mA
35 20 80
70
30
15 60
P1dB (dBm)
50
GAIN (dB)
25
PAE (%)
10 40
20 -40 °C
-40 °C 30
25 °C
25 °C -40 °C
85 °C
85 °C 5 20 25 °C
15 85 °C
10
10 0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 17. P1dB vs. Temp and Freq. Figure 18. Gain vs. Temp and Freq. Figure 19. PAE vs. Temp and Freq.

Tuned for Optimal P1dB at 4.5 V, 200 mA
50 50 35
45 45
30
40 40
P1dB (dBm)
OIP3 (dBm)
35
OIP3 (dBm)
35 25
30 30
20
25 25
4.5 V 4.5 V 4.5 V
20 20 4V 4V
4V 15
3V 3V 3V
15 15
10 10 10
50 150 250 350 450 550 50 150 250 350 450 550 50 150 250 350 450 550
Figure 20. OIP3 vs. IDS and VDS at 2 GHz. Figure 21. OIP3 vs. IDS and VDS at 900 MHz. Figure 22. P1dB vs. IDS and VDS at 2 GHz.
35 12 22
10 20
30
8 18
P1dB (dBm)
GAIN (dB)
GAIN (dB)
25
6 16
20
4 14
4.5 V 4.5 V 4.5 V
15 4V 4V 4V
3V 2 3V 12 3V
10 0 10
50 150 250 350 450 550 50 150 250 350 450 550 50 150 250 350 450 550
Figure 23. P1dB vs. IDS and VDS at 900 MHz. Figure 24. Gain vs. IDS and VDS at 2 GHz. Figure 25. Gain vs. IDS and VDS at 900 MHz.
Note:
6
Tuned for Optimal P1dB at 4.5V, 200 mA
50 70 45
60
40 40
50
OIP3 (dBm)
30 35
PAE (%)
PAE (%)
40
20 30
30
4.5 V 4.5 V -40 °C
10 4V 4V 25 25 °C
3V 20 3V 85 °C
0 10 20
50 150 250 350 450 550 50 150 250 350 450 550 0.5 1 1.5 2 2.5 3 3.5 4
IDS (mA) IDS (mA) FREQUENCY (GHz)
Figure 26. PAE vs. IDS and VDS at 2 GHz. Figure 27. PAE vs. IDS and VDS at 900 MHz. Figure 28. OIP3 vs. Temp and Freq.
40 20 70
35 60
15
50
30
P1dB (dBm)
GAIN (dB)
PAE (%)
40
25 10
30
20
20
-40 °C 5 -40 °C
15 25 °C -40 °C 25 °C
85 °C 25 °C 10 85 °C
85 °C
10 0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 29. P1dB vs. Temp and Freq. Figure 30. Gain vs. Temp and Freq. Figure 31. PAE vs. Temp and Freq.
Note:
7
0.1 0.94 -134.9 31.16 36.15 111.2 -38.53 0.01 29.7 0.73 -164.5 34.79
0.2 0.93 -157.7 25.64 19.14 99.2 -37.87 0.01 21.8 0.76 -173.7 31.68
0.3 0.93 -166.6 22.26 12.97 94.2 -37.61 0.01 21.1 0.78 -176.8 29.99
0.4 0.93 -171.8 19.78 9.74 90.9 -37.09 0.01 23.4 0.78 -179.9 28.43
0.5 0.92 -173.9 18.70 8.60 88.9 -36.15 0.01 25.4 0.75 178.9 27.31
0.6 0.93 -176.9 17.12 7.18 86.1 -35.80 0.01 27.0 0.75 176.9 26.52
0.7 0.92 -178.8 15.78 6.15 84.3 -35.41 0.01 29.5 0.75 175.5 25.59
0.8 0.93 178.7 14.61 5.37 82.3 -35.11 0.01 32.5 0.76 174.0 24.75
0.9 0.92 177.1 13.58 4.77 80.6 -35.00 0.01 33.1 0.75 172.8 24.24
1 0.93 175.7 12.64 4.28 79.1 -34.46 0.01 35.0 0.76 171.6 23.53
1.5 0.93 168.7 8.99 2.81 71.4 -32.70 0.02 40.0 0.76 166.0 20.88
2 0.93 163.0 6.36 2.08 64.2 -31.27 0.02 42.3 0.76 160.6 17.20
2.5 0.92 157.8 4.40 1.66 57.2 -29.90 0.03 42.5 0.76 155.5 14.71
3 0.92 152.5 2.73 1.36 50.4 -28.59 0.03 41.6 0.75 149.7 12.65
4 0.92 142.8 0.03 1.00 37.6 -26.69 0.04 35.7 0.74 138.6 9.96
5 0.91 133.2 -2.17 0.77 24.2 -25.30 0.05 29.8 0.71 127.2 7.23
6 0.91 124.6 -4.21 0.61 14.1 -24.32 0.06 23.7 0.65 117.2 4.97
7 0.91 115.7 -5.80 0.51 5.6 -23.48 0.06 19.5 0.59 111.3 3.02
8 0.91 106.0 -6.82 0.45 -2.6 -22.49 0.07 14.1 0.56 108.2 1.86
9 0.91 95.5 -7.36 0.42 -10.2 -21.39 0.08 8.5 0.58 103.7 1.19
10 0.90 85.2 -7.98 0.40 -22.2 -20.50 0.09 0.4 0.60 96.0 0.53
11 0.89 74.3 -8.69 0.38 -29.1 -19.72 0.10 -8.4 0.63 87.2 -0.04
12 0.89 63.0 -9.25 0.35 -40.1 -19.42 0.10 -17.1 0.65 77.6 -0.61
13 0.89 54.1 -9.80 0.32 -51.7 -19.12 0.11 -23.9 0.67 68.2 -1.04
14 0.90 46.3 -10.25 0.31 -55.2 -18.65 0.11 -29.7 0.69 58.7 -1.13
15 0.90 40.6 -10.86 0.30 -57.3 -18.57 0.11 -35.8 0.69 50.1 -1.88
16 0.89 33.3 -11.16 0.32 -71.1 -18.02 0.12 -42.3 0.71 41.8 -2.26
17 0.83 25.4 -11.81 0.24 -75.3 -17.65 0.13 -47.1 0.73 35.1 -3.17
18 0.86 20.0 -12.07 0.24 -90.5 -17.43 0.13 -53.1 0.76 27.7 -3.76
40 Notes:
30 made on 0.025 inch thick alumina carrier. The

MSG
20 lead. The output reference plane is at the end
of the drain lead.
10
MAG
0
S21
-10
-20
0 5 10 15 20
FREQUENCY (GHz)
Figure 32. MSG/MAG & |S21|2 (dB)

@ 4.5V, 300 mA.
8
0.1 0.94 -132.6 31.26 36.54 112.1 -37.40 0.01 27.2 0.70 -161.0 34.49
0.2 0.93 -156.3 25.79 19.47 99.6 -36.68 0.01 19.2 0.74 -171.6 31.13
0.3 0.94 -165.6 22.40 13.18 94.4 -36.47 0.01 19.9 0.76 -175.6 29.44
0.4 0.93 -170.8 19.93 9.92 91.1 -36.17 0.01 19.9 0.76 -178.8 27.93
0.5 0.92 -173.1 18.84 8.75 89.0 -35.11 0.01 24.6 0.73 179.9 26.87
0.6 0.92 -176.2 17.26 7.29 86.2 -34.84 0.01 23.9 0.73 177.8 26.08
0.7 0.92 -178.2 15.92 6.25 84.3 -34.72 0.01 25.6 0.73 176.2 25.41
0.8 0.92 179.4 14.76 5.47 82.3 -34.37 0.01 27.6 0.74 174.7 24.59
0.9 0.93 177.4 13.72 4.85 80.4 -34.02 0.02 28.6 0.74 173.4 23.85
1 0.92 176.0 12.77 4.34 79.1 -33.71 0.02 30.8 0.74 172.2 23.16
1.5 0.93 168.9 9.13 2.86 70.9 -32.20 0.02 35.0 0.74 166.5 20.59
2 0.93 163.6 6.49 2.11 63.7 -30.97 0.02 38.2 0.74 161.1 17.50
2.5 0.92 157.9 4.50 1.67 56.8 -29.65 0.03 39.1 0.74 155.9 14.78
3 0.93 152.6 2.81 1.38 49.3 -28.54 0.03 38.1 0.74 150.2 13.16
4 0.91 143.1 0.16 1.01 35.8 -26.68 0.04 33.9 0.73 139.0 9.84
5 0.91 133.7 -2.08 0.78 22.7 -25.40 0.05 28.0 0.70 127.4 7.34
6 0.91 124.7 -4.02 0.62 12.0 -24.42 0.06 22.3 0.65 117.0 5.01
7 0.90 115.7 -5.75 0.51 3.3 -23.61 0.06 18.2 0.58 110.2 2.77
8 0.90 105.6 -6.77 0.45 -3.9 -22.73 0.07 14.4 0.54 107.5 1.56
9 0.91 95.7 -7.45 0.42 -12.1 -21.60 0.08 8.4 0.55 103.9 1.13
10 0.91 84.9 -7.95 0.40 -22.4 -20.76 0.09 0.9 0.58 97.0 0.82
11 0.89 74.0 -8.29 0.38 -32.0 -19.93 0.10 -8.6 0.61 88.4 -0.05
12 0.89 63.1 -9.19 0.34 -39.5 -19.45 0.10 -16.8 0.64 78.9 -0.82
13 0.89 54.0 -9.74 0.326 -51.1 -19.03 0.11 -24.1 0.67 69.1 -1.38
14 0.90 46.4 -10.17 0.31 -58.1 -18.78 0.11 -30.7 0.68 59.6 -1.33
15 0.90 38.8 -10.85 0.28 -67.8 -18.47 0.11 -36.1 0.68 50.9 -1.80
16 0.91 33.1 -10.77 0.28 -73.7 -18.19 0.12 -42.9 0.71 42.0 -2.11
17 0.85 26.8 -11.05 0.28 -83.3 -17.88 0.12 -47.5 0.73 35.3 -2.60
18 0.87 19.3 -11.53 0.26 -100.4 -17.54 0.13 -53.8 0.75 27.3 -2.83
40
Notes:
MSG/MAG & |S21| (dB)
30
MSG made on 0.025 inch thick alumina carrier. The
2
20
of the drain lead.
10
MAG
0
S21
-10
-20
0 5 10 15 20
FREQUENCY (GHz)
2
Figure 33. MSG/MAG & |S21| (dB)
@ 4.5V, 200 mA.
9
0.1 0.93 -125.4 30.99 35.43 115.3 -34.72 0.01 28.6 0.65 -151.1 32.94
0.2 0.93 -152.1 25.70 19.27 101.4 -33.88 0.02 18.9 0.70 -166.3 29.84
0.3 0.93 -162.8 22.34 13.09 95.5 -33.70 0.02 15.5 0.72 -172.2 27.95
0.4 0.92 -168.7 19.90 9.88 91.8 -33.49 0.02 16.5 0.72 -176.0 26.73
0.5 0.91 -170.8 18.78 8.68 89.5 -32.50 0.02 17.7 0.69 -177.2 25.59
0.6 0.91 -174.4 17.21 7.25 86.6 -32.42 0.02 17.6 0.7 -179.7 24.80
0.7 0.92 -176.8 15.88 6.22 84.4 -32.20 0.02 19.1 0.7 178.3 23.96
0.8 0.92 -179.0 14.72 5.44 82.3 -32.13 0.02 18.8 0.70 176.6 23.38
0.9 0.92 178.7 13.69 4.83 80.4 -32.02 0.02 18.9 0.70 175.2 22.86
1 0.91 177.0 12.73 4.33 78.8 -31.85 0.02 20.6 0.70 173.8 22.22
1.5 0.92 169.8 9.11 2.85 70.2 -30.95 0.02 24.8 0.70 167.8 20.08
2 0.91 163.9 6.49 2.11 62.8 -30.00 0.03 27.8 0.71 162.3 18.19
2.5 0.91 158.8 4.52 1.68 55.2 -29.22 0.03 29.0 0.71 157.2 14.84
3 0.91 153.0 2.89 1.39 47.7 -28.39 0.03 29.0 0.71 151.6 12.76
4 0.91 143.7 0.20 1.02 33.1 -26.77 0.04 27.2 0.70 140.4 9.92
5 0.91 134.0 -2.08 0.78 19.2 -25.62 0.05 22.2 0.68 128.7 7.42
6 0.90 125.0 -4.20 0.61 7.3 -24.73 0.05 17.3 0.64 117.4 4.79
7 0.90 115.7 -6.04 0.49 -1.6 -23.99 0.06 14.3 0.56 109.1 2.45
8 0.90 106.4 -7.35 0.42 -7.7 -23.23 0.06 11.2 0.51 106.4 0.71
9 0.90 96.5 -8.14 0.39 -16.4 -22.04 0.07 7.2 0.51 105.0 0.01
10 0.9 86.1 -8.45 0.37 -25.3 -20.89 0.09 0.5 0.54 99.3 -0.37
11 0.89 75.4 -9.46 0.33 -35.2 -20.08 0.09 -7.5 0.58 90.9 -1.33
12 0.90 63.8 -9.59 0.33 -46.1 -19.41 0.10 -16.7 0.62 81.3 -1.60
13 0.89 54.7 -10.42 0.30 -52.9 -19.02 0.11 -25.1 0.65 71.3 -1.93
14 0.90 46.5 -10.99 0.28 -59.8 -18.87 0.11 -31.7 0.67 61.4 -2.12
15 0.88 40.2 -11.15 0.27 -70.6 -18.71 0.11 -38.2 0.68 52.4 -2.66
16 0.90 33.5 -11.50 0.26 -71.7 -18.22 0.12 -45.5 0.70 43.3 -2.83
17 0.86 26.4 -11.50 0.26 -80.8 -18.28 0.12 -49.0 0.72 35.9 -3.33
18 0.86 19.3 -11.51 0.26 -92.6 -17.88 0.12 -54.8 0.74 27.9 -3.69
40
Notes:
30
MSG made on 0.025 inch thick alumina carrier. The
20
10
of the drain lead.
MAG
0
S21
-10
-20
0 5 10 15 20
FREQUENCY (GHz)
2
@ 4.5V, 100 mA.
10
ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
0.1 0.94 -133.7 30.85 34.87 111.4 -37.28 0.01 28.2 0.73 -162.5 33.96
0.2 0.93 -156.9 25.31 18.41 99.5 -36.61 0.01 20.4 0.76 -172.6 30.89
0.3 0.93 -165.9 21.89 12.43 94.2 -36.19 0.01 20.2 0.78 -176.3 28.90
0.4 0.94 -170.9 19.48 9.42 90.9 -35.98 0.01 20.4 0.78 -179.5 27.70
0.5 0.93 -174.5 17.53 7.52 88.8 -35.84 0.01 23.0 0.78 178.5 26.73
0.6 0.93 -175.8 16.77 6.89 86.0 -34.69 0.01 23.5 0.76 177.3 25.83
0.7 0.93 -178.2 15.53 5.97 84.2 -34.42 0.01 25.0 0.75 175.5 24.98
0.8 0.92 179.7 14.28 5.17 82.5 -34.11 0.02 27.1 0.76 173.9 24.13
0.9 0.92 178.0 13.21 4.57 80.5 -33.77 0.02 29.2 0.76 172.5 23.60
1 0.93 176.3 12.34 4.13 78.6 -33.66 0.02 29.6 0.76 171.4 22.95
1.5 0.92 169.6 8.63 2.70 71.0 -32.21 0.02 34.5 0.76 165.3 20.34
2 0.93 164.4 6.12 2.02 63.5 -30.69 0.02 38.0 0.76 159.2 17.32
2.5 0.92 159.6 4.07 1.59 57.0 -29.46 0.03 39.4 0.76 154.1 14.52
3 0.92 154.2 2.30 1.30 50.3 -28.47 0.03 37.7 0.75 148.6 12.34
4 0.92 144.9 -0.31 0.96 37.4 -26.48 0.04 33.8 0.73 137.1 9.75
5 0.91 135.5 -2.55 0.74 25.4 -25.14 0.05 28.4 0.69 127.3 6.74
6 0.92 126.6 -4.30 0.60 15.1 -24.15 0.06 23.4 0.64 119.4 5.17
7 0.91 117.1 -5.64 0.52 6.50 -23.20 0.06 18.3 0.62 114.5 3.27
8 0.91 108.2 -6.81 0.45 -2.8 -22.06 0.07 12.3 0.62 108.5 2.03
9 0.90 99.1 -7.13 0.44 -13.7 -21.10 0.08 5.2 0.62 100.8 1.60
10 0.92 89.2 -7.76 0.40 -21.2 -20.40 0.09 -2.7 0.64 90.4 1.40
11 0.90 79.6 -8.39 0.38 -30.0 -19.67 0.10 -11.0 0.65 79.3 0.26
12 0.91 70.9 -8.92 0.35 -42.9 -19.28 0.10 -19.9 0.66 67.0 0.15
13 0.90 62.2 -9.42 0.33 -48.9 -19.11 0.11 -27.2 0.67 57.1 -0.69
14 0.94 53.8 -9.84 0.32 -60.1 -18.86 0.11 -33.1 0.68 48.7 -1.20
15 0.87 45.0 -10.51 0.29 -68.5 -18.58 0.11 -38.4 0.7 40.0 -1.56
16 0.89 37.7 -10.74 0.29 -72.4 -18.59 0.11 -43.7 0.71 36.3 -1.97
17 0.89 30.5 -10.03 0.31 -85.1 -17.88 0.12 -48.3 0.73 28.8 -2.50
18 0.88 25.4 -11.77 0.25 -91.8 -17.72 0.13 -59.0 0.74 19.5 -2.82
40 Notes:

MSG
20
of the drain lead.
10
MAG
0
S21
-10
-20
0 5 10 15 20
FREQUENCY (GHz)

@ 4V, 200 mA.
11
0.1 0.95 -137.1 29.51 29.89 109.9 -36.88 0.01 25.2 0.78 -166.0 33.29
0.2 0.94 -159.0 23.89 15.65 98.7 -36.27 0.01 19.8 0.81 -174.5 30.18
0.3 0.94 -167.3 20.46 10.54 93.8 -36.20 0.01 18.0 0.82 -177.6 28.47
0.4 0.94 -172.0 18.04 7.98 90.7 -35.82 0.01 20.5 0.83 179.4 26.98
0.5 0.93 -175.3 16.10 6.38 88.7 -35.59 0.01 22.4 0.83 177.6 25.75
0.6 0.93 -176.8 15.36 5.86 85.9 -34.34 0.01 24.0 0.81 176.3 24.89
0.7 0.93 -178.7 14.14 5.09 84.2 -34.27 0.01 24.8 0.81 174.6 24.28
0.8 0.93 179.1 12.87 4.4 82.6 -34.12 0.02 27.1 0.81 173.1 23.42
0.9 0.93 177.3 11.82 3.89 80.6 -33.66 0.02 29.1 0.81 171.7 22.69
1 0.93 176.1 10.91 3.51 78.9 -33.55 0.02 29.3 0.81 170.7 22.23
1.5 0.93 169.4 7.24 2.30 71.8 -31.97 0.02 35.4 0.81 164.6 19.64
2 0.93 164.0 4.75 1.72 64.7 -30.60 0.03 38.5 0.81 158.5 16.34
2.5 0.93 159.1 2.73 1.36 58.5 -29.39 0.03 38.5 0.81 153.4 14.08
3 0.92 154.0 0.93 1.11 51.6 -28.15 0.03 37.4 0.80 147.6 11.72
4 0.93 144.8 -1.58 0.83 38.7 -26.26 0.04 33.1 0.78 135.8 9.24
5 0.92 135.2 -3.78 0.64 27.3 -24.91 0.05 27.7 0.74 125.0 6.28
6 0.93 126.0 -5.54 0.52 17.2 -24.05 0.06 22.1 0.68 115.6 4.39
7 0.91 116.6 -7.07 0.44 10.5 -23.11 0.07 17.2 0.63 110.7 1.96
8 0.91 107.4 -7.66 0.41 2.06 -22.08 0.07 12.1 0.62 106.3 1.32
9 0.90 98.4 -8.06 0.39 -5.6 -21.04 0.08 5.0 0.63 99.5 0.60
10 0.92 89.0 -8.99 0.35 -15.9 -20.23 0.09 -2.7 0.64 89.8 0.49
11 0.92 79.5 -9.12 0.35 -25.8 -19.45 0.10 -12.4 0.66 78.7 0.19
12 0.91 70.1 -9.28 0.34 -35.9 -19.08 0.11 -21.4 0.68 66.3 -0.19
13 0.91 61.9 -9.71 0.32 -39.9 -18.93 0.11 -29.2 0.69 56.4 -0.68
14 0.92 51.8 -10.04 0.31 -54.7 -18.89 0.11 -35.6 0.70 47.9 -0.40
15 0.88 44.1 -10.01 0.31 -59.8 -18.63 0.11 -40.7 0.72 39.0 -1.57
16 0.87 36.4 -10.16 0.31 -77.5 -18.83 0.11 -44.7 0.73 35.3 -1.85
17 0.83 30.1 -10.61 0.31 -87.2 -18.17 0.12 -51.2 0.74 27.7 -2.42
18 0.85 24.0 -11.96 0.25 -97.4 -17.69 0.13 -58.3 0.75 18.3 -3.71
40 Notes:

MSG
20
of the drain lead.
10
MAG
0
S21
-10
-20
0 5 10 15 20
FREQUENCY (GHz)
2
@ 3V, 200 mA.
12
Device Models
Refer to Avago’s Web Site
www.Avagotech.com/view/rf
ATF-511P8-TR1 3000 7” Reel
ATF-511P8-TR2 10000 13”Reel
D1 D
P pin1
pin1
1 8
2 7
E1
R
e
3
1PX 6
E
4 5
L b
A A1 A
A2
Side View End View
DIMENSIONS
A 0.70 0.75 0.80
A1 0 0.02 0.05
A2 0.203 REF 0.203 REF 0.203 REF
b 0.225 0.25 0.275
D 1.9 2.0 2.1
D1 0.65 0.80 0.95
E 1.9 2.0 2.1
E1 1.45 1.6 1.75
e 0.50 BSC 0.50 BSC 0.50 BSC
P 0.20 0.25 0.30
L 0.35 0.40 0.45
13
2.80 (110.24) 2.72 (107.09)
0.70 (27.56) 0.63 (24.80)
0.25 (9.84) 0.22 (8.86)
0.25 (9.84) 0.32 (12.79)

PIN 1 PIN 1
φ0.20 (7.87) 0.50 (19.68) 0.50 (19.68)

1.60 (62.99) 1.54 (60.61)
Solder + 0.28 (10.83) 0.25 (9.74)
mask
RF 0.60 (23.62) 0.72 (28.35) 0.63 (24.80)

line
0.15 (5.91)
0.55 (21.65)
Notes:
Typical stencil thickness is 5 mils.
Measurements are in millimeters (mils).
Device Orientation
REEL 4 mm
8 mm
1PX 1PX 1PX 1PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
14
Tape Dimensions
P P0 P2
D
F
W
+ +
D1
t1 Tt
K0
10° Max 10° Max
A0 B0
CAVITY LENGTH A0 2.30 ± 0.05 0.091 ± 0.004

WIDTH B0 2.30 ± 0.05 0.091 ± 0.004
DEPTH K0 1.00 ± 0.05 0.039 ± 0.002
PITCH P 4.00 ± 0.10 0.157 ± 0.004

PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004

8.00 – 0.10 0.315 ± 0.004
THICKNESS t1 0.254 ± 0.02 0.010 ± 0.0008


(WIDTH DIRECTION)
(LENGTH DIRECTION)
15
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5988-8246EN
5989-0003EN - July 10, 2007
ATF-521P8
High Linearity Enhancement Mode [1] Pseudomorphic HEMT
Data Sheet
Avago Technologies’ ATF‑521P8 is a single-voltage high • Single voltage operation
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC- • High linearity and P1dB
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a medium-power, high-linearity • Low noise figure
amplifier. Its operating frequency range is from 50 MHz • Excellent uniformity in product specifications
to 6 GHz. • Small package size: 2.0 x 2.0 x 0.75 mm3
The thermally efficient package measures only 2mm • Point MTTF > 300 years[2]
x 2mm x 0.75mm. Its backside metalization provides
• MSL-1 and lead-free
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over • Tape-and-reel packaging option available
300 years at a mounting temperature of +85°C. All
Specifications
devices are 100% RF & DC tested.
• 2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
• 26.5 dBm output power at 1 dB gain compression
(Thermal/RF Gnd)

Pin 7 (Drain) Pin 2 (Gate) • 1.5 dB noise figure
Source
Pin 6 Pin 3 • 17 dB Gain

Pin 5 Pin 4 (Source) • 12.5 dB LFOM[4]
Bottom View Applications
Pin 1 (Source) Pin 8 • Front-end LNA Q2 and Q3, driver or pre-driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
2Px • Driver amplifier for WLAN, WLL/RLL and MMDS applica‑
Pin 3 Pin 6
tions
Pin 4 (Source) Pin 5 • General purpose discrete E-pHEMT for other high linear‑
Top View ity applications
Note:
Package marking provides orientation and identification
“x” = Month code indicates the month of manufacture. Attention: Observe precautions for
Note: ESD Human Body Model (Class 1C)
1. Enhancement mode technology employs a single positive Vgs, Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge Damage and Control.
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
ATF-521P8 Absolute Maximum Ratings [1]
Absolute
Symbol Parameter Units Maximum
VDS Drain – Source Voltage [2] V 7
VGS Gate –Source Voltage [2] V -5 to 1
VGD Gate Drain Voltage [2]
V -5 to 1
IDS Drain Current[2] mA 500
Pin max. RF Input Power dBm 27
Notes:
1. Operation of this device in excess of any one of these parameters may cause permanent damage.
3. Board (package belly) temperatureTB is 25°C. Derate 22 mW/°C for TB > 83°C.
4. Channel to board thermal resistance measured using 150°C Liquid Crystal Measurement method.
5. Device can safely handle +27dBm RF Input Power provided IGS is limited to 46mA. IGS at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts [5, 6]

600 180 150
Stdev = 0.19 Cpk = 0.86
0.8V Stdev = 1.32
500 150
120
0.7V
400 120
90
IDS (mA)

300 90
Vgs = 0.6V 60
200 60
30
100 30
0.5V
0.4V 0
0 0
0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 37 39 41 43 45 47 49
VDS (V) NF (dB) OIP3 (dBm)
Figure 1. Typical I-V Curves. Figure 2. NF @ 2 GHz, 4.5 V, 200 mA. Figure 3. OIP3 @ 2 GHz, 4.5 V, 200 mA.
(VGS = 0.1 V per step) Nominal = 1.5 dB. Nominal = 41.9 dBm, LSL = 38.5 dBm.
180 300
Cpk = 2.13 Cpk = 4.6
Stdev = 0.21 Stdev = 0.11
150 250
120 200

90 150
60 100
30 50
0 0
15 16 17 18 19 25 25.5 26 26.5 27 27.5
GAIN (dB) P1dB (dBm)
Figure 4. Gain @ 2 GHz, 4.5 V, 200 mA. Figure 5. P1dB @ 2 GHz, 4.5 V, 200 mA.
Nominal = 17.2 dB, LSL = 15.5 dB, Nominal = 26.5 dBm, LSL = 25 dBm.
USL = 18.5 dB.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have


Vgs Operational Gate Voltage Vds = 4.5V, Ids = 200 mA V — 0.62 —
Vgs = Vgs1 - Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -20 0.49 —
f = 900 MHz dB — 1.2 —
G Gain[1] f = 2 GHz dB 15.5 17 18.5
f = 900 MHz dB — 17.2 —
OIP3 Output 3rd Order f = 2 GHz dBm 38.5 42 —
Intercept Point[1] f = 900 MHz dBm — 42.5 —
P1dB Output 1dB f = 2 GHz dBm 25 26.5 —
Compressed[1] f = 900 MHz dBm — 26.5 —
PAE Power Added Efficiency f = 2 GHz % 45 60 —
f = 900 MHz % — 56 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — -51.4 —
Power Ratio[1,2] Offset BW = 10 MHz dBc — -61.5 —
Notes:
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz

Line Including Γ_mag = 0.55 DUT Γ_mag = 0.35 Line and
Gate Bias T Γ_ang = -166° Γ_ang = 168° Drain Bias T
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.

1 pF
3.9 nH
1.5 pF .02 λ .03 λ .03 λ .02 λ 1.5 pF
12 nH 47 nH
15 Ohm
2.2 µF
2.2 µF Drain
Supply
Gate
Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Optimum OIP3
0.9 0.413 10.5 0.314 179.0 42.7 16.0 27.0 54.0
2 0.368 162.0 0.538 -176.0 42.5 15.8 27.5 55.3
2.4 0.318 169.0 0.566 -169.0 42.0 14.1 27.4 53.5
3.9 0.463 -134.0 0.495 -159.0 40.3 9.6 27.3 43.9
Optimum P1dB
0.9 0.587 12.7 0.613 -172.1 39.1 14.5 29.3 49.6
2 0.614 126.1 0.652 -172.5 39.5 12.9 29.3 49.5
2.4 0.649 145.0 0.682 -171.5 40.0 12.0 29.4 46.8
3.9 0.552 -162.8 0.670 -151.2 38.1 9.6 27.9 39.1

Tuned for Optimal OIP3
50 45 50
45 40 45
40 40
35
35 35
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
30
30 30
25
25 25
4.5V 20 4.5V 4.5V
20 20
4V 4V 4V
3V 15 3V 3V
15 15
10 10 10
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Id (mA) Id (mA) Id (mA)
Figure 8. OIP3 vs. Ids and Vds at 2 GHz. Figure 9. OIP3 vs. Ids and Vds at 900 MHz. Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
35 35 35
30 30 30
P1dB (dBm)
P1dB (dBm)
P1dB (dBm)
25 25 25
20 20 20
4.5V 4.5V 4.5V

15 4V 15 4V 15 4V
3V 3V 3V
10 10 10
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 11. P1dB vs. Idq and Vds at 2 GHz. Figure 12. P1dB vs. Idq and Vds at 900 MHz. Figure 13. P1dB vs. Idq and Vds at 3.9 GHz.
17 17 12
16 16 11
15 15 10
GAIN (dBm)
GAIN (dBm)
GAIN (dBm)
14 14 9
13 13 8
12 4.5V 12 4.5V 7 4.5V

4V 4V 4V
11 3V 11 3V 6 3V
10 10 5
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 14. Small Signal Gain vs Ids and Vds Figure 15. Small Signal Gain vs Ids and Vds Figure 16. Small Signal Gain vs Ids and Vds
at 2 GHz. at 900 MHz. at 3.9 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.

70 70 50
45
60 60
40
50 50
35
PAE (%)
PAE (%)
PAE (%)
40 40 30
25
30 30
4.5V 4.5V 4.5V
20
4V 4V 4V
20 20 3V 3V
3V 15
10 10 10
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 17. PAE @ P1dB vs. Idq and Vds Figure 18. PAE @ P1dB vs. Idq and Vds Figure 19. PAE @ P1dB vs. Idq and Vds
50 29 20
45 27
15
40 25
P1dB (dBm)
OIP3 (dBm)
GAIN (dB)
35 23
10
30 21
85°C 85°C 85°C
25 19 25°C
25°C 25°C 5
-40°C -40°C -40°C
20 17
15 15 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 20. OIP3 vs. Temp and Freq Figure 21. P1dB vs. Temp and Freq Figure 22. Gain vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA. tuned for optimal OIP3 at 4.5V, 200 mA. tuned for optimal OIP3 at 4.5V, 200 mA.
70
60
50
PAE (%)
40
30
85°C
20
25°C
-40°C
10
0
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 23. PAE vs Temp and Freq

tuned for optimal OIP3 at 4.5V, 200 mA.
Note:

Tuned for Optimal P1dB
45 45 50
40 40 45
40
35 35
35
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
30 30
30
25 25
25
20 20 4.5V 4.5V
4.5V 4.5V 20
4V 4V
4V 4V
15 3V 15 3V
3V 3V
15
10 10 10
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 24. OIP3 vs. Ids and Vds at 2 GHz. Figure 25. OIP3 vs. Ids and Vds at 900 MHz. Figure 26. OIP3 vs. Ids and Vds at 3.9 GHz.
35 35 35
30 30 30
P1dB (dBm)
P1dB (dBm)
P1db (dBm)
25 25 25
20 20 20
4.5V 4.5V 4.5V

15 4V 15 4V 15 4V
3V 3V 3V
10 10 10
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 27. P1dB vs. Idq and Vds at 2 GHz. Figure 28. P1dB vs. Idq and Vds at 900 MHz. Figure 29. P1dB vs. Idq and Vds at 3.9 GHz.
17 17 17
4.5V
15 15 15 4V
3V
13 13 13
GAIN (dBm)
GAIN (dBm)
GAIN (dBm)
11 11 11
9 9 9
4.5V 4.5V
4V 4V
7 3V 7 3V 7
5 5 5
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 30. Gain vs Ids and Vds at 2 GHz. Figure 31. Gain vs Ids and Vds at 900 MHz. Figure 32. Gain vs Ids and Vds at 3.9 GHz.
Note:

Tuned for Optimal P1dB
60 55 40
55 50
50 35
45
45
PAE (%)
PAE (%)
PAE (%)
40
40 30
35
35
4.5V 30 4.5V 4.5V
30 4V 25 4V
4V
3V 3V 3V
25 25
20 20 20
100 150 200 250 300 350 400 100 150 200 250 300 350 400 100 150 200 250 300 350 400
Figure 33. PAE @ P1dB vs. Idq and Vds Figure 34. PAE @ P1dB vs. Idq and Vds Figure 35. PAE @ P1dB vs. Idq and Vds
50 32 20
45 30
15
40
28
OIP3 (dBm)
GAIN (dB)
P1dB (dBm)
35
26 10
30
85°C 24 85°C
25 85°C
25°C 25°C 5 25°C
-40°C -40°C -40°C
20 22
15 20 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
Figure 36. OIP3 vs. Temp and Freq Figure 37. P1dB vs. Temp and Freq Figure 38. Gain vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA. (tuned for optimal P1dB at 4.5V, 200 mA). tuned for optimal P1dB at 4.5V, 200 mA.
60
50
40
PAE (%)
30
20 85°C
25°C
-40°C
10
0
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 39. PAE vs Temp and Freq

tuned for optimal P1dB at 4.5V.
Note:

ATF-521P8 Typical Scattering Parameters at 25°C, VDS = 4.5V, IDS = 280 mA
0.1 0.613 -96.9 33.2 45.79 141.7 -39.5 0.011 51.3 0.317 -108.3 36.2
0.2 0.780 -131.8 30.0 31.50 121.6 -36.7 0.015 37.1 0.423 -138.5 33.2
0.3 0.831 -147.2 27.3 23.26 111.0 -36.2 0.015 30.6 0.466 -152.4 31.9
0.4 0.855 -156.4 25.1 18.04 104.1 -35.4 0.017 28.2 0.483 -159.9 30.3
0.5 0.860 -162.0 23.5 14.98 99.7 -35.2 0.017 27.4 0.488 -163.8 29.5
0.6 0.878 -166.7 22.0 12.62 95.6 -35.0 0.018 26.1 0.496 -167.0 28.5
0.7 0.888 -170.2 20.8 10.95 92.8 -34.6 0.019 27.4 0.497 -169.9 27.6
0.8 0.887 -172.6 19.7 9.63 90.0 -34.3 0.019 28.9 0.500 -171.7 27.0
0.9 0.894 -174.5 18.7 8.65 87.9 -33.7 0.021 28.5 0.501 -173.6 26.1
1.0 0.886 -177.2 17.9 7.82 85.4 -33.8 0.020 30.3 0.502 -175.7 25.9
1.5 0.892 175.0 14.3 5.20 76.3 -32.8 0.023 34.6 0.502 178.8 23.5
2.0 0.883 168.7 12.1 4.01 68.4 -31.2 0.027 36.7 0.492 173.6 20.2
2.5 0.890 162.8 10.2 3.24 61.5 -30.0 0.032 36.8 0.490 169.8 18.5
3.0 0.884 157.2 8.6 2.71 54.5 -28.9 0.036 39.2 0.494 165.7 16.2
4.0 0.890 146.6 6.1 2.02 40.6 -27.0 0.045 36.1 0.505 157.8 13.8
5.0 0.893 137.0 4.1 1.60 27.6 -25.5 0.053 32.4 0.529 150.3 11.9
6.0 0.896 127.9 2.3 1.31 15.4 -24.2 0.061 28.2 0.551 142.9 10.4
7.0 0.906 119.5 0.9 1.11 3.7 -22.9 0.071 22.9 0.570 135.5 9.6
8.0 0.882 105.6 -0.8 0.92 -9.8 -21.3 0.086 14.5 0.567 127.3 6.8
9.0 0.887 96.4 -1.7 0.82 -22.2 -20.1 0.098 7.2 0.585 117.8 6.2
10.0 0.887 84.6 -2.9 0.72 -33.6 -19.3 0.109 -1.0 0.593 107.3 5.0
11.0 0.882 72.3 -3.9 0.64 -45.8 -18.5 0.119 -10.5 0.617 97.1 3.9
12.0 0.878 62.2 -5.0 0.56 -57.0 -18.0 0.126 -19.8 0.636 86.0 2.8
13.0 0.894 52.0 -6.4 0.48 -67.8 -17.8 0.130 -28.6 0.662 74.7 2.1
14.0 0.888 42.0 -7.6 0.42 -76.2 -17.3 0.137 -36.1 0.697 67.5 0.9
15.0 0.884 34.6 -8.3 0.38 -84.3 -16.6 0.147 -42.9 0.732 58.7 0.3
16.0 0.830 24.7 -9.5 0.34 -92.8 -16.1 0.156 -52.4 0.752 51.9 -1.8
17.0 0.708 11.0 -9.0 0.35 -99.5 -15.4 0.169 -63.8 0.816 46.1 -2.2
18.0 0.790 -12.7 -10.3 0.31 -93.1 -16.4 0.152 -82.8 0.660 41.2 -4.3
Typical Noise Parameters at 25°C, VDS = 4.5V, IDS = 280 mA 40.0
Freq Fmin Γopt Γopt Rn Ga 30.0

MSG
GHz dB Mag. Ang. dB
20.0
0.5 1.20 0.47 170.00 2.8 22.8
1.0 1.30 0.53 -177.00 2.6 20.1 10.0
MAG
2.0 1.61 0.61 -166.34 2.7 17.3
0.0
3.0 1.68 0.69 -155.85 4.0 14.4 S21
4.0 2.12 0.67 -146.98 8.4 11.6 -10.0
5.0 2.77 0.71 -134.35 19.0 9.9
6.0 2.58 0.79 -125.22 26.7 8.8 -20.0
7.0 2.85 0.82 -115.35 47.2 7.5 0 5 10 15 20
8.0 3.35 0.73 -105.76 65.2 5.7 FREQUENCY (GHz)
Figure 40. MSG/MAG and |S21|2 vs.

Frequency at 4.5V, 280 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.

0.1 0.823 -89.9 34.4 52.21 135.6 -37.9 0.013 46.2 0.388 -113.0 36.0
0.2 0.873 -128.7 30.5 33.39 115.7 -35.6 0.017 32.0 0.478 -143.2 32.9
0.3 0.879 -145.5 27.6 23.90 106.3 -34.9 0.018 27.0 0.507 -156.0 31.2
0.4 0.885 -155.1 25.2 18.25 100.5 -34.7 0.018 25.8 0.518 -163.1 30.1
0.5 0.883 -161.1 23.6 15.12 96.6 -34.4 0.019 24.8 0.519 -166.7 29.0
0.6 0.897 -165.9 22.1 12.66 92.9 -34.1 0.020 24.2 0.525 -169.6 28.0
0.7 0.895 -169.5 20.8 10.95 90.5 -33.7 0.021 24.2 0.526 -172.2 27.2
0.8 0.894 -171.9 19.6 9.59 88.0 -33.6 0.021 25.3 0.528 -174.0 26.6
0.9 0.900 -174.7 18.7 8.64 86.2 -33.1 0.022 26.2 0.528 -175.6 25.9
1 0.893 -176.6 17.8 7.78 83.7 -33.1 0.022 27.6 0.529 -177.7 25.5
1.5 0.894 175.3 14.3 5.17 75.7 -32.1 0.025 32.6 0.527 177.2 23.2
2 0.889 168.5 12.0 4.00 67.8 -30.8 0.029 33.6 0.516 172.1 21.4
2.5 0.888 162.6 10.2 3.22 61.3 -29.8 0.032 35.2 0.514 168.1 18.4
3 0.892 157.0 8.6 2.69 54.5 -28.6 0.037 35.6 0.517 164.0 16.7
4 0.884 146.5 6.0 2.00 40.7 -26.8 0.046 34.4 0.526 156.0 13.5
5 0.891 137.0 4.0 1.59 28.3 -25.2 0.055 30.5 0.548 148.3 11.9
6 0.889 127.9 2.3 1.30 16.4 -24.0 0.063 26.4 0.568 141.0 10.1
7 0.902 119.6 0.9 1.11 4.8 -22.8 0.072 21.0 0.584 133.5 9.4
8 0.881 105.6 -0.9 0.90 -8.8 -21.3 0.086 13.3 0.580 124.9 6.7
9 0.891 96.0 -1.7 0.83 -20.1 -20.2 0.098 5.6 0.594 115.8 6.4
10 0.876 83.9 -2.9 0.72 -32.1 -19.3 0.108 -3.2 0.600 105.3 4.6
11 0.885 73.1 -3.6 0.66 -43.7 -18.5 0.119 -12.1 0.622 95.0 4.2
12 0.885 60.9 -4.8 0.57 -54.1 -18.0 0.126 -21.6 0.641 84.1 3.0
13 0.893 53.0 -6.3 0.48 -66.2 -17.7 0.131 -29.9 0.663 73.1 2.1
14 0.889 42.2 -7.2 0.44 -74.0 -17.2 0.138 -36.7 0.698 65.7 1.2
15 0.894 34.3 -7.8 0.41 -80.6 -16.9 0.143 -44.1 0.732 57.4 1.0
16 0.840 25.0 -8.4 0.38 -83.4 -16.2 0.154 -54.3 0.750 51.0 -0.8
17 0.719 9.1 -10.0 0.32 -90.1 -15.4 0.171 -64.8 0.815 44.5 -3.2
18 0.794 -8.1 -12.2 0.25 -102.3 -16.7 0.147 -84.1 0.655 40.4 -5.9
Typical Noise Parameters, VDS = 4.5V, IDS = 200 mA 40.0

MSG
GHz dB Mag. Ang. dB
20.0
0.5 0.60 0.30 130.00 2.8 20.2
1.0 0.72 0.35 150.00 2.6 18.4 10.0
MAG
2.0 0.96 0.47 -175.47 1.9 16.5
0.0
3.0 1.11 0.57 -162.03 2.1 13.8 S21
4.0 1.44 0.62 -150.00 4.5 11.2
-10.0
5.0 1.75 0.69 -136.20 10.0 9.8
6.0 1.99 0.74 -127.35 17.0 8.7 -20.0
7.0 2.12 0.80 -116.83 28.5 7.5 0 5 10 15 20
8.0 2.36 0.69 -108.38 35.6 5.7 FREQUENCY (GHz)

Notes:
10
0.1 0.913 -84.6 34.2 51.26 135.4 -36.4 0.015 49.0 0.423 -106.6 35.3
0.2 0.900 -125.0 30.3 32.80 115.4 -33.9 0.020 31.2 0.499 -139.4 32.1
0.3 0.896 -142.0 27.4 23.39 106.1 -33.4 0.021 25.3 0.522 -153.4 30.5
0.4 0.893 -152.3 25.1 17.89 100.3 -32.9 0.023 23.5 0.530 -161.1 28.9
0.5 0.882 -158.4 23.4 14.75 96.3 -32.6 0.023 22.5 0.531 -165.0 28.1
0.6 0.895 -164.2 21.8 12.36 92.9 -32.7 0.023 20.6 0.537 -168.4 27.3
0.7 0.893 -167.8 20.6 10.71 90.5 -32.4 0.024 20.4 0.537 -171.2 26.5
0.8 0.895 -170.8 19.5 9.39 88.0 -32.3 0.024 21.1 0.539 -173.1 25.9
0.9 0.897 -173.0 18.5 8.44 86.1 -32.2 0.025 22.1 0.539 -174.8 25.3
1 0.895 -175.5 17.6 7.59 83.6 -31.8 0.026 23.0 0.540 -176.9 24.7
1.5 0.893 176.0 14.1 5.07 75.3 -31.1 0.028 25.5 0.538 177.4 22.6
2 0.889 169.2 11.8 3.89 67.8 -30.0 0.032 27.9 0.528 172.2 20.8
2.5 0.882 163.6 10.0 3.15 61.2 -29.0 0.036 30.2 0.526 168.1 19.4
3 0.888 157.9 8.4 2.62 54.6 -28.2 0.039 30.2 0.528 163.9 16.9
4 0.883 146.8 5.9 1.97 40.7 -26.5 0.047 29.7 0.536 155.7 13.6
5 0.885 137.7 3.8 1.55 28.2 -25.2 0.055 26.3 0.556 148.1 11.6
6 0.892 128.0 2.1 1.28 16.7 -24.0 0.063 21.9 0.576 140.5 10.2
7 0.894 120.4 0.6 1.08 5.1 -22.8 0.072 18.2 0.591 133.1 8.9
8 0.880 105.7 -1.0 0.89 -8.7 -21.2 0.087 10.6 0.585 124.3 6.6
9 0.876 96.5 -1.9 0.81 -20.8 -20.1 0.099 3.2 0.602 114.9 5.7
10 0.879 84.4 -3.0 0.71 -32.7 -19.3 0.108 -5.2 0.605 104.5 4.7
11 0.889 72.8 -3.8 0.65 -44.3 -18.6 0.118 -13.5 0.624 94.2 4.3
12 0.881 62.4 -5.2 0.55 -56.0 -18.1 0.125 -23.1 0.642 83.4 2.7
13 0.893 54.0 -6.3 0.48 -66.6 -17.7 0.130 -31.4 0.664 72.4 2.2
14 0.891 42.1 -7.2 0.44 -72.6 -17.3 0.136 -38.4 0.697 65.1 1.2
15 0.888 34.1 -8.3 0.39 -79.2 -16.8 0.144 -45.9 0.732 56.7 0.4
16 0.845 25.3 -9.1 0.35 -89.6 -16.1 0.157 -55.0 0.751 50.4 -1.5
17 0.828 13.2 -11.2 0.28 -95.9 -15.6 0.167 -64.2 0.821 44.0 -3.9
18 0.827 -10.2 -11.0 0.28 -92.5 -16.6 0.147 -86.1 0.654 39.9 -4.3
Typical Noise Parameters, VDS = 4.5V, IDS = 120 mA 40.0

MSG
GHz dB Mag. Ang. dB
20.0
0.5 0.60 0.19 162.00 3.0 20.0
1.0 0.72 0.30 164.00 2.6 18.3 10.0
MAG
2.0 0.81 0.44 176.97 2.0 15.9
0.0
3.0 0.92 0.56 -164.98 2.0 13.6 S21
4.0 1.24 0.59 -155.51 3.4 11.1 -10.0

5.0 1.50 0.70 -136.55 11.1 9.7
6.0 1.60 0.75 -128.59 16.0 8.7 -20.0
0 5 10 15 20
7.0 1.88 0.81 -117.31 24.0 7.6
FREQUENCY (GHz)
8.0 2.02 0.68 -109.54 28.8 5.6
Notes:
11
0.1 0.843 -90.5 34.3 51.89 134.8 -37.7 0.013 46.5 0.408 -118.1 36.0
0.2 0.879 -129.3 30.3 32.88 115.0 -35.4 0.017 32.1 0.507 -146.1 32.9
0.3 0.888 -146.1 27.4 23.48 105.8 -35.1 0.018 26.0 0.539 -158.3 31.2
0.4 0.892 -155.6 25.1 17.91 100.1 -34.4 0.019 25.1 0.549 -164.8 29.7
0.5 0.886 -161.5 23.4 14.80 96.3 -34.2 0.020 24.6 0.551 -168.2 28.7
0.6 0.896 -165.7 21.8 12.37 92.7 -34.2 0.020 24.1 0.556 -170.9 27.9
0.7 0.897 -169.5 20.6 10.74 90.5 -33.6 0.021 24.7 0.557 -173.5 27.1
0.8 0.898 -172.2 19.5 9.39 88.1 -33.5 0.021 24.4 0.559 -175.2 26.5
0.9 0.896 -174.9 18.6 8.47 85.9 -33.3 0.022 26.5 0.559 -176.9 25.9
1 0.896 -176.7 17.6 7.61 84.0 -32.9 0.023 26.3 0.560 -178.7 25.2
1.5 0.898 175.2 14.1 5.06 75.7 -32.1 0.025 29.9 0.558 176.0 23.1
2 0.887 168.0 11.8 3.91 68.1 -30.7 0.029 35.2 0.547 170.9 21.3
2.5 0.893 162.8 10.0 3.15 61.7 -29.5 0.034 35.8 0.545 166.9 18.9
3 0.886 156.9 8.4 2.63 55.1 -28.4 0.038 35.8 0.547 162.6 16.3
4 0.887 146.6 5.9 1.97 41.5 -26.7 0.046 33.2 0.554 154.3 13.6
5 0.894 136.8 3.9 1.57 29.4 -25.1 0.056 29.6 0.572 146.6 11.9
6 0.898 127.4 2.1 1.28 17.7 -23.9 0.064 25.5 0.590 139.0 10.3
7 0.896 119.7 0.7 1.09 6.3 -22.6 0.074 20.4 0.603 131.6 8.9
8 0.879 105.4 -0.9 0.90 -7.1 -21.1 0.088 12.4 0.594 122.7 6.6
9 0.888 95.0 -1.7 0.82 -19.3 -20.1 0.099 4.7 0.609 113.2 6.1
10 0.872 84.1 -2.9 0.72 -30.9 -19.2 0.110 -4.3 0.610 102.9 4.4
11 0.880 72.4 -3.8 0.65 -42.8 -18.6 0.118 -12.9 0.629 92.6 3.8
12 0.875 60.4 -4.8 0.58 -53.3 -18.0 0.126 -22.8 0.647 81.9 2.8
13 0.908 52.4 -6.2 0.49 -63.4 -17.7 0.130 -31.4 0.666 71.0 2.6
14 0.898 41.3 -7.1 0.44 -73.5 -17.2 0.138 -38.0 0.699 64.0 1.5
15 0.888 34.1 -8.2 0.39 -80.2 -16.8 0.144 -45.6 0.734 55.9 0.5
16 0.815 24.1 -8.9 0.36 -85.3 -16.2 0.156 -54.7 0.750 49.3 -1.7
17 0.725 11.3 -9.9 0.32 -90.9 -15.5 0.167 -66.0 0.809 43.5 -3.1
18 0.792 -9.8 -10.2 0.31 -95.1 -16.6 0.147 -84.8 0.652 39.7 -4.2
Typical Noise Parameters, VDS = 4V, IDS = 200 mA 40.0

MSG
GHz dB Mag. Ang. dB
20.0
0.5 0.67 0.21 155.00 2.8 20.1
1.0 0.74 0.30 164.00 2.6 18.4 10.0
MAG
2.0 0.96 0.46 -176.61 2.1 16.4
0.0
3.0 1.24 0.57 -162.19 2.8 13.9 S21
4.0 1.44 0.62 -152.18 4.5 11.4 -10.0
5.0 1.62 0.69 -135.43 10.0 10.0
6.0 1.83 0.74 -127.94 17.0 8.7 -20.0
0 5 10 15 20
7.0 1.99 0.82 -117.20 27.7 7.7
8.0 2.21 0.71 -108.96 35.3 5.9 FREQUENCY (GHz)

Frequency at 4V, 200 mA.
Notes:
12
0.1 0.867 -94.6 33.7 48.20 132.4 -36.8 0.014 45.1 0.482 -132.4 35.4
0.2 0.894 -132.9 29.4 29.66 113.2 -34.9 0.018 28.5 0.601 -154.2 32.2
0.3 0.899 -148.2 26.5 21.06 104.4 -34.1 0.020 23.2 0.636 -163.8 30.2
0.4 0.896 -157.2 24.1 16.00 99.1 -34.0 0.020 23.7 0.647 -169.2 29.0
0.5 0.892 -162.8 22.4 13.20 95.6 -33.6 0.021 24.5 0.650 -171.9 28.0
0.6 0.910 -167.4 20.8 11.00 92.3 -33.2 0.022 22.9 0.655 -174.4 27.0
0.7 0.906 -170.8 19.6 9.51 90.2 -33.2 0.022 23.9 0.657 -176.7 26.4
0.8 0.902 -173.6 18.4 8.35 87.8 -33.0 0.022 24.6 0.658 -178.2 25.8
0.9 0.907 -175.2 17.5 7.51 86.3 -32.9 0.023 27.0 0.660 -179.5 25.1
1 0.902 -177.7 16.6 6.76 84.2 -32.5 0.024 26.9 0.659 178.6 24.5
1.5 0.900 174.2 13.1 4.50 76.4 -31.5 0.027 32.7 0.656 173.4 22.2
2 0.896 168.1 10.8 3.49 69.1 -29.9 0.032 32.9 0.647 167.9 20.4
2.5 0.896 162.3 9.0 2.82 63.0 -29.0 0.036 34.3 0.642 163.7 18.6
3 0.887 156.7 7.4 2.35 56.9 -27.7 0.041 35.0 0.643 159.2 15.6
4 0.890 145.7 4.9 1.76 43.8 -26.1 0.050 32.2 0.645 150.4 12.9
5 0.898 136.3 3.0 1.41 32.1 -24.5 0.059 28.3 0.659 142.1 11.3
6 0.896 127.4 1.3 1.16 21.6 -23.4 0.068 23.5 0.671 134.3 9.5
7 0.904 119.4 -0.2 0.98 10.3 -22.1 0.078 17.7 0.677 126.6 8.5
8 0.877 104.9 -1.6 0.83 -2.3 -20.7 0.092 9.0 0.651 117.0 5.9
9 0.883 94.8 -2.4 0.76 -13.0 -19.8 0.102 1.3 0.661 107.2 5.3
10 0.877 83.1 -3.5 0.67 -26.0 -18.9 0.113 -7.3 0.657 96.8 4.0
11 0.875 71.7 -4.4 0.60 -36.3 -18.3 0.121 -16.6 0.670 86.7 3.1
12 0.863 60.6 -5.4 0.54 -47.4 -17.8 0.128 -25.1 0.680 76.2 1.9
13 0.910 51.6 -6.5 0.47 -57.9 -17.6 0.132 -33.6 0.694 65.9 2.3
14 0.868 40.9 -7.5 0.42 -62.8 -17.2 0.138 -40.4 0.721 59.3 0.2
15 0.863 33.4 -8.1 0.39 -74.7 -16.8 0.144 -47.6 0.748 51.3 -0.2
16 0.835 25.2 -9.6 0.33 -78.2 -16.3 0.154 -56.8 0.758 44.9 -2.1
17 0.720 11.2 -9.5 0.33 -90.8 -15.8 0.161 -67.6 0.818 39.4 -2.6
18 0.780 -7.7 -11.6 0.26 -92.8 -17.0 0.142 -85.1 0.655 37.1 -5.7
Typical Noise Parameters, VDS = 3V, IDS = 200 mA 40.0

MSG
GHz dB Mag. Ang. dB
20.0
0.5 0.66 0.22 147.00 2.9 20.0
1.0 0.72 0.30 160.00 2.6 18.3 10.0
MAG
2.0 0.87 0.42 -179.94 1.9 16.0
0.0
3.0 1.00 0.59 -163.63 1.6 13.7 S21
4.0 1.32 0.63 -153.81 3.7 11.3 -10.0

5.0 1.49 0.72 -135.10 10.0 9.9
6.0 1.59 0.74 -128.97 15.0 8.5 -20.0
0 5 10 15 20
7.0 1.79 0.78 -117.68 25.1 7.6
FREQUENCY (GHz)
8.0 1.96 0.70 -110.04 29.2 5.6
Frequency at 3V, 200 mA.
Notes:
13
ATF-521P8 Applications Information
Description
Avago Technologies' ATF-521P8 is an enhancement return loss will not be greater than 10 dB. For most ap‑
mode PHEMT designed for high linearity and medium plications, a designer requires VSWR greater than 2:1,
power applications. With an OIP3 of 42 dBm and a 1dB hence limiting the input match close to S11*. Normally,
compression point of 26 dBm, ATF-521P8 is well suited the input return loss of a single ended amplifier is not
as a base station transmit driver or a first or second critical as most basestation LNA and driver amplifiers
stage LNA in a receive chain. Whether the design is are in a balanced configuration with 90° (quadrature)
for a W-CDMA, CDMA, or GSM basestation, this device couplers.
delivers good linearity in the form of OIP3 or ACLR,
Proceeding from the same premise, the output match
which is required for standards with high peak to
of this device becomes much simpler. As background
average ratios.
information, it is important to note that OIP3 is largely
Application Guidelines dependant on the output match and that output return
loss is also required to be greater than 10 dB. So, Figure
The ATF-521P8 device operates as a normal FET 2 shows how both good output return loss and good
requiring input and output matching as well as DC linearity could be achieved simultaneously with the
biasing. Unlike a depletion mode transistor, this en‑ same impedance point.
hancement mode device only requires a single positive
power supply, which means a positive voltage is placed Of course, these points are valid only at 2 GHz, and
on the drain and gate in order for the transistor to turn other frequencies will follow the same design rules but
on. This application note walks through the RF and DC will have different locations. Also, the location of these
design employed in a single FET amplifier. Included in points is largely due to the manufacturing process and
this description is an active feedback scheme to accom‑ partly due to IC layout, but in either case beyond the
plish this DC biasing. scope of this application note.
RF Input & Output Matching

In order to achieve maximum linearity, the appropri‑
ate input (Γs) and output (ΓL) impedances must be
presented to the device. Correctly matching from these
ΓL
impedances to 50Ωs will result in maximum linearity.
Although ATF-521P8 may be used in other impedance S22*
systems, data collected for this data sheet is all refer‑
enced to a 50Ω system.
The input load pull parameter at 2 GHz is shown in
Figure 1 along with the optimum S11 conjugate match.
Figure
Figure 2. 2.
Output MatchMatch
Output atat2 2
GHz.
GHz.
Once a designer has chosen the proper input and

output impedance points, the next step is to choose the
ΓS correct topology to accomplish this match. For example
to perform the above output impedance transformation
S11* from 50Ω to the given load parameter of 0.53∠-176°,
two possible solutions exist. The first potential match
3 dB
16 d
9 dB
5 dB
n Los
s is a high pass configuration accomplished by a shunt
B
Retur
inductor and a series capacitor shown in Figure 3 along
with its frequency response in Figure 4.
GHz.8
Figure 1. Input Match for ATF-521P RFin C1 RFout
Figure 1. Input Match for ATF-521P8 at 2 GHz.
Thus, it should be obvious from the illustration above L1

that if this device is matched for maximum return
loss i.e. S11*, then OIP3 will be sacrificed. Conversely,
if ATF-521P8 is matched for maximum linearity, then Figure 3. High Pass Circuit Topology.
14
Amp Figure 7 displays the input and output matching
selected for ATF-521P8. In this example the input and
output match both essentially function as high pass
filters, but the high frequency gain of the device rolls off
Frequency precipitously giving a narrow band frequency response,
yet still wide enough to accommodate a CDMA or
Figure 4. High Pass Frequency Response. WCDMA transmit band. For more information on RF
The second solution is a low pass configuration with a matching techniques refer to MGA-53543 application
shunt capacitor and a series inductor shown in Figure 5 note.
and 6.
Passive Bias [1]
RFin L1 RFout
Once the RF matching has been established, the next
step is to DC bias the device. A passive biasing example
C1 is shown in Figure 8. In this example the voltage drop
across resistor R3 sets the drain current (Id) and is calcu‑
Figure 5. Low Pass Circuit Topology. lated by the following equation:
R3 = Vdd – Vds (1)
Amp Ids + Ibb p
where,
Frequency Vdd is the power supply voltage;
Vds is the device drain to source voltage;
Figure 6. Low Pass Frequency Response.
Ids is the device drain to source current;
The actual values of these components may be calcu‑ Ibb for DC stability is 10X the typical gate current;
lated by hand on a Smith Chart or more accurately done
on simulation software such as ADS. There are some A voltage divider network with R1 and R2 establishes
advantages and disadvantages of choosing a high pass the typical gate bias voltage (Vg).
versus a low pass. For instance, a high pass circuit R1 = Vg (2)
cuts off low frequency gain, which narrows the usable
Ibb p
bandwidth of the amplifier, but consequently helps

avoid potential low frequency instability problems.
A low pass match offers a much broader frequency R2 = (Vdd – Vg) x R1 (3)
response, but it has two major disadvantages. First it has
Vg
the potential for low frequency instability, and second it
creates the need for an extra DC blocking capacitor on Often the series resistor, R4, is added to enhance the
the input in order to isolate the device gate from the low frequency stability. The complete passive bias
preceding stages. example may be found in reference [1].
RFin C1 C3 RFout
Zo 52 Zo
C2 L1
Total Response
Input Match ATF-521P8 Output Match Amp
Amp Amp Amp
+ + =
Frequency Frequency Frequency Frequency
Figure 7. Input and Output Match for ATF‑521P8 at 2 GHz.
15
INPUT C1 C4 OUTPUT To calculate the values of R1, R2, R3, and R4 the
Q1
Zo
Zo following parameters must be know or chosen first:
L1 C2
L4 C5 Ids is the device drain-to-source current;
R4
IR is the Reference current for active bias;
C3
R3
Ib Vdd is the power supply voltage available;
C6
R5 Vds is the device drain-to-source voltage;
Vg is the typical gate bias;
R1 R2
Vdd Vbe1 is the typical Base-Emitter turn on voltage for Q1 &
Q2;
Figure 8. Passive Biasing.
Therefore, resistor R3, which sets the desired device
Active Bias [2] drain current, is calculated as follows:
Due to very high DC power dissipation and small R3 = Vdd – Vds (4)
package constraints, it is recommended that ATF-521P8 Ids + IC2 p
use active biasing. The main advantage of an active

biasing scheme is the ability to hold the drain to source where,
current constant over a wide range of temperature
IC2 is chosen for stability to be 10 times the typical gate
variations.
current and also equal to the reference current IR.
A very inexpensive method of accomplishing this
The next three equations are used to calculate the
is to use two PNP bipolar transistors arranged in a
rest of the biasing resistors for Figure 9. Note that the
current mirror configuration as shown in Figure 9. Due
voltage drop across R1 must be set equal to the voltage
to resistors R1 and R3, this circuit is not acting as a
drop across R3, but with a current of IR.
true current mirror, but if the voltage drop across R1
and R3 is kept identical then it still displays some of R1 = Vdd – Vds (5)
the more useful characteristics of a current mirror. For IR
example, transistor Q1 is configured with its base and
collector tied together. This acts as a simple PN junction, R2 sets the bias current through Q1.
which helps temperature compensate the Emitter-Base R2 = Vds – Vbe1 (6)
junction of Q2.
IR p
R2 Q1 VE R1 R4 sets the gate voltage for ATF‑521P8.

Vdd R4 = Vg (7)
IC 2 p
C6
R4 Vg Vds R3
Q2 Thus, by forcing the emitter voltage (VE) of transistor
C4 C5 Q1 equal to Vds, this circuit regulates the drain current
similar to a current mirror. As long as Q2 operates in the
R6 forward active mode, this holds true. In other words, the
R5
C3 C8 Collector-Base junction of Q2 must be kept reversed
biased.
L3
L2
RFin C1 L1 C7 RFout
2 7
2PL
C2 ATF-521P8
L4
Figure 9. Active Bias Circuit.
16
PCB Layout
A recommended PCB pad layout for the Leadless Plastic This simplifies RF grounding by reducing the amount
Chip Carrier (LPCC) package used by the ATF-521P8 is of inductance from the source to ground. It is also
shown in Figure 10. This layout provides plenty of plated recommended to ground pins 1 and 4 since they are
through hole vias for good thermal and RF grounding. It also connected to the device source. Pins 3, 5, 6, and 8
also provides a good transition from microstrip to the are not connected, but may be used to help dissipate
device package. For more detailed dimensions refer to heat from the package or for better alignment when
Section 9 of the data sheet. soldering the device.
This three-layer board (Figure 12) contains a 10-mil layer
and a 52-mil layer separated by a ground plane. The first
layer is Getek RG200D material with dielectric constant
of 3.8. The second layer is for mechanical rigidity and
consists of FR4 with dielectric constant of 4.2.
High Linearity Tx Driver

Figure 10. Microstripline Layout. The need for higher data rates and increased voice
capacity gave rise to a new third generation standard
RF Grounding know as Wideband CDMA or UMTS. This new standard
Unlike SOT packages, ATF-521P8 is housed in a leadless requires higher performance from radio components
package with the die mounted directly to the lead such as higher dynamic range and better linearity. For
frame or the belly of the package shown in Figure 11. example, a WCDMA waveform has a very high peak to
average ratio which forces amplifiers in a transmit chain
to have very good Adjacent Channel Leakage power
(Thermal/RF Gnd)
Pin 7 (Drain) Pin 2 (Gate) Ratio or ACLR, or else operate in a backed off mode.
Source
Pin 6 Pin 3 If the amplifier is not backed off then the waveform is
Pin 5 Pin 4 (Source) compressed and the signal becomes very nonlinear.
Bottom View This application example presents a highly linear
Figure 11. LPCC Package for ATF-521P8. transmit drive for use in the 2.14GHz frequency range.
Using the RF matching techniques described earlier,
ATF-521P8 is matched to the following input and output
impedances:
C5
BCV62B
R2 R1
R4 R3
0
C4 C6
R6
R5
C3 C7
J1 J2
L3
L2
L4
C1 L1 0 C8
C2
short
Figure 12. ATF-521P8 demoboard.
17
Input Output
Match 2PL Match Table 1. Resistors for Active Bias.
50 Ohm 50 Ohm Resistor Calculated Actual
S11* = 0.89∠ -169 ΓL = 0.53∠ -176 R1 50Ω 49.9Ω

R2 385Ω 383Ω
Figure 13. ATF-521P8 Matching.
R3 2.38Ω 2.37Ω
As described previously the input impedance must R4 62Ω 61.9Ω
be matched to S11* in order to guarantee return loss
greater than 10 dB. A high pass network is chosen for
this match. The output is matched to ΓL with another The entire circuit schematic for a 2.14 GHz Tx driver
high pass network. The next step is to choose the amplifier is shown below in Figure 14. Capacitors C4,
proper DC biasing conditions. From the data sheet, C5, and C6 are added as a low frequency bypass. These
ATF-521P8 produces good linearity at a drain current terminate second order harmonics and help improve
of 200mA and a drain to source voltage of 4.5V. Thus to linearity. Resistors R5 and R6 also help terminate low
construct the active bias circuit described, the following frequencies, and can prevent resonant frequencies
parameters are given: between the two bypass capacitors.
Ids = 200 mA Performance of ATF-521P8 at 2140 MHz

IR = 10 mA ATF-521P8 delivers excellent performance in the
WCDMA frequency band. With a drain-to-source voltage
Vdd = 5 V
of 4.5V and a drain current of 200 mA, this device has
Vds = 4.5V 16.5 dB of gain and 1.55 dB of noise figure as show in
Vg = 0.62V Figure 15.
Vbe1 = 0.65 V
Using equations 4, 5, 6, and 7, the biasing resistor values

are calculated in column 2 of table 1, and the actual
values used are listed in column 3.
IR
R2=383Ω R1=49.9Ω
Q1
Vbe1+ +5V
C5=1µF
Vg Vds
Q2
R4=61.9Ω R3=2.37Ω
IC2
C4=1µF C6=.1µF
R6=1.2Ω
R5=10Ω
C3=4.7pF C7=150pF
L2=12nH L3=39nH
RFin C1=1.2pF C8=1.5pF RFout
L1=1.0nH 2 7
2PL
C2=1.5nH ATF-521P8
L4=3.9nH
Figure 14. 2140 MHz Schematic.
18
20 45
Gain
15 40
GAIN and NF (dB)
OIP3 (dBm)
10 35
5 30
NF
0 25
1.6 1.8 2.0 2.2 2.4 2.6 2060 2080 2100 2120 2140 2160 2180 2200
FREQUENCY (GHz) FREQUENCY (MHz)
Figure 15. Gain and Noise Figure vs. Figure 17. OIP3 vs. Frequency in WCDMA
Figure 15. Gain and Noise Figure vs. Frequency. Figure 17. OIP3 vs. Frequency in WCDMA Band (Pout = 12 dBm).
Frequency. Band (Pout = 12 dBm).
Input and output return loss are both greater that -30
10 dB. Although somewhat narrowband, the response -35
is adequate in the frequency range of 2110 MHz to
2170 MHz for the WCDMA downlink. If wider band -40
response is need, using a balanced configuration
ACLR (dB)
-45
improves return loss and doubles OIP3.
-50
0 -55
-60
S11
INPUT AND OUTPUT
-65
RETURN LOSS (dB)
-5 -3 2 7 12 17 22
Pout (dBm)
Figure 18. ACLR vs. Pout at 5 MHz Offset.
-10 Figure 18. ACLR vs. Pout at 5 MHz Offset.
S22
Table 2. 2140 MHz Bill of Material.
-15
C1=1.2 pF Phycomp 0402CG129C9B200
1.6 1.8 2.0 2.2 2.4 2.6
C2,C8=1.5 pF Phycomp 0402CG159C9B200
FREQUENCY (GHz)
C3=4.7 pF Phycomp 0402CG479C9B200
Figure 16. Input and Output Return Loss vs.
Figure 16.Frequency.
Input and Output Return Loss vs. Frequency. C4,C6=.1 µF Phycomp 06032F104M8B200
C5=1 µF AVX 0805ZC105KATZA
Perhaps the most critical system level specification for
the ATF‑521P8 lies in its distortion-less output power. C7=150 pF Phycomp 0402CG151J9B200
Typically, amplifiers are characterized for linearity by L1=1.0 nH TOKO LL1005-FH1n0S
measuring OIP3. This is a two-tone harmonic mea‑ L2=12 nH TOKO LL1005-FS12N
surement using CW signals. But because WCDMA is L3=39 nH TOKO LL1005-FS39
a modulated waveform spread across 3.84 MHz, it is L4=3.9 nH TOKO LL1005-FH3N9S
difficult to correlated good OIP3 to good ACLR. Thus,
R1=49.9Ω RohmRK73H1J49R9F
both are measured and presented to avoid ambiguity.
R2=383Ω Rohm RK73H1J3830F
R3=2.37Ω Rohm RK73H1J2R37F
R5=10Ω Rohm RK73H1J10R0F
Q1, Q2 Philips BCV62B
J1, J2 142-0701-851
19
Using the 3GPP standards document Release 1999 where,
version 2002-6, the following channel configuration
θb –a is the board to ambient thermal resistance;
was used to test ACLR. This table contains the power
levels of the main channels used for Test Model 1. θch–b is the channel to board thermal resistance.
Note that the DPCH can be made up of 16, 32, or 64 The board to ambient thermal resistance thus becomes
separate channels each at different power levels and very important for this is the designer’s major source
timing offsets. For a listing of power levels, channeliza‑ of heat control. To demonstrate the influence of θb-a,
tion codes and timing offset see the entire 3GPP TS thermal resistance is measured for two very different
25.141 V3.10.0 (2002-06) standards document at: http:// scenarios using the ATF-521P8 demoboard. The first
www.3gpp.org/specs/specs.htm case is done with just the demoboard by itself. The
Table 3. ACLR Channel Power Configuration. second case is the ATF demoboard mounted on a
chassis or metal casing, and the results are given below:
3GPP TS 25.141 V3.10.0 (2002-06) Type Pwr (dB)
Table 4. Thermal resistance measurements.
P-CCPCH+SCH -10
Primary CPICH -10 ATF Demoboard θ b-a
PICH -18 PCB 1/8" Chassis 10.4°C/W
S-CCPCH containing PCH (SF=256) -18 PCB no HeatSink 32.9°C/W
DPCH-64ch (SF=128) -1.1
Thermal Design Therefore calculating the temperature of the channel

for these two scenarios gives a good indication of what
When working with medium to high power FET type of heat sinking is needed.
devices, thermal dissipation should be a large part
of the design. This is done to ensure that for a given Case 1: Chassis Mounted @ 85°C
ambient temperature the transistor’s channel does not
exceed the maximum rating, TCH, on the data sheet. Tch = P x (θch-b + θb-a) + Ta
For example, ATF‑521P8 has a maximum channel tem‑ =.9W x (45+10.4)°C/W +85°C
perature of 150°C and a channel to board thermal
resistance of 45°C/W, thus the entire thermal design Tch = 135°C
hinges from these key data points. The question that
must be answered is whether this device can operate Case 2: No Heatsink @ 85°C
in a typical environment with ambient temperature Tch = P x (θch-b + θb-a) + Ta
fluctuations from -25°C to 85°C. From Figure 19, a very
useful equation is derived to calculate the temperature =.9W x (45+32.9)°C/W + 85°C
of the channel for a given ambient temperature. These
calculations are all incorporated into Avago Technolo‑ Tch = 155°C
gies AppCAD. In other words, if the board is mounted to a chassis, the
Tch channel temperature is guaranteed to be 135°C safely
(channel) below the 150°C maximum. But on the other hand, if
θch-b no heat sinking is used and the θb-a is above 27°C/W
Pdiss = Vds x Ids
Tb (board (32.9°C/W in this case), then the power must be derated

or belly
of the part) enough to lower the temperature below 150°C. This can
θb-s be better understood with Figure 20 below. Note power
Ts (sink)
is derated at 13 mW/°C for the board with no heat sink
and no derating is required for the chassis mounted
θs-a board until an ambient temperature of 100°C.
Ta (ambient) Pdiss
(W)
Figure 19. Equivalent Circuit for Thermal Resistance.
0.9W Mounted on Chassis
Hence very similar to Ohms Law, the temperature of the (18 mW/°C)
channel is calculated with equation 8 below.
No Heatsink
(13 mW/°C)
TCH = Pdiss (θch–b + θ b–s + θs–a ) + Tamb (8)
0 81 100 150 Tamb (°C)
If no heat sink is used or heat sinking is incorporated
Figure 20. Derating for ATF- 521P8.
into the PCB board then equation 8 may be reduced to:
TCH = Pdiss (θch–b + θ b–a ) + Tamb (9)
20
Thus, for reliable operation of ATF-521P8 and extended References
MTBF, it is recommended to use some form of thermal
[1] Ward, A. (2001) Avago Technologies ATF‑54143 Low Noise
heatsinking. This may include any or all of the following
Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic
suggestions:
Package, 2001 [Internet], Available from:
• Maximize vias underneath and around package;
<http://www.avagotech.com>
• Maximize exposed surface metal;
[2] Biasing Circuits and Considerations for GaAs MESFET
• Use 1 oz or greater copper clad; Power Amplifiers, 2001 [Internet], Available from:
• Minimize board thickness; <http://www.rf-solutions.com/pdf/AN‑0002_ajp.pdf>
• Metal heat sinks or extrusions; [Accessed 22 August, 2002]
• Fans or forced air;
• Mount PCB to Chassis. Device Models
Summary Refer to Avago Technologies' Web Site:
A high linearity Tx driver amplifier for WCDMA has been www.avagotech.com
presented and designed using Agilent’s ATF-521P8. This
includes RF, DC and good thermal dissipation practices Ordering Information
for reliable lifetime operation. A summary of the typical
performance for ATF-521P8 demoboard at 2140 MHz is Part Number No. of Devices Container
as follows: ATF-521P8-TR1 3000 7” Reel
Demo Board Results at 2140 MHz ATF-521P8-TR2 10000 13”Reel
Gain 16.5 dB
OIP3 41.2 dBm
ACLR -58 dBc
P1dB 24.8 dBm
NF 1.55 dB

D1 D
P pin1
pin1
1 8 DIMENSIONS
2 7
E1
R
e
3
2PX 6
E A
A1
0.70
0
0.75
0.02
0.80
0.05
A2 0.203 REF
4 5 b 0.225 0.25 0.275
D 1.9 2.0 2.1
L b D1 0.65 0.80 0.95
E 1.9 2.0 2.1
E1 1.45 1.6 1.75
e 0.50 BSC
P 0.2 0.25 0.3
A A1 A L 0.35 0.4 0.45
A2 DIMENSIONS ARE IN MILLIMETERS
End View End View
21
2.80 (110.24) 2.72 (107.09)
0.70 (27.56) 0.63 (24.80)

0.25 (9.84) 0.22 (8.86)
0.25 (9.84) 0.32 (12.79)

PIN 1 PIN 1
φ0.20 (7.87) 0.50 (19.68) 0.50 (19.68)

1.60 (62.99) 1.54 (60.61)
Solder + 0.28 (10.83) 0.25 (9.74)
mask
RF 0.60 (23.62) 0.63 (24.80)

0.72 (28.35)
line
0.15 (5.91)
0.55 (21.65)
Device Orientation
REEL 4 mm
8 mm
2PX 2PX 2PX 2PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
22
Tape Dimensions
P P0 P2
D
F
W
+ +
D1
t1 Tt
K0
10° Max 10° Max
A0 B0
CAVITY LENGTH A0 2.30 ± 0.05 0.091 ± 0.004

WIDTH B0 2.30 ± 0.05 0.091 ± 0.004
DEPTH K0 1.00 ± 0.05 0.039 ± 0.002
PITCH P 4.00 ± 0.10 0.157 ± 0.004

PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004

8.00 – 0.10 0.315 ± 0.004
THICKNESS t1 0.254 ± 0.02 0.010 ± 0.0008


(WIDTH DIRECTION)
(LENGTH DIRECTION)
AV02-0846EN - July 7, 2009
ATF-531P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
Data Sheet
Avago Technologies’ ATF‑531P8 is a single-voltage high • Single voltage operation
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC- • High linearity and gain
standard leadless plastic chip carrier (LPCC [3]) package.
• Low noise figure
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50 • Excellent uniformity in product specifications
MHz to 6 GHz. • Small package size:
The thermally efficient package measures only 2 mm 2.0 x 2.0 x 0.75 mm
x 2 mm x 0.75 mm. Its backside metalization provides • Point MTTF > 300 years [2]
excellent thermal dissipation as well as visual evidence • MSL-1 and lead-free
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are • Tape-and-reel packaging option available
100% RF & DC tested.
Specifications
Pin Connections and Package Marking 2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
(Thermal/RF Gnd)

• 0.6 dB noise figure
Pin 7 (Drain) Pin 2 (Gate)
Source
• 20 dB gain
Pin 6 Pin 3
• 10.7 dB LFOM [4]
• 24.5 dBm output power at 1 dB gain compression
Bottom View
Applications
• Front-end LNA Q1 and Q2 driver or pre-driver ampli‑
Pin 2 (Gate) Pin 7 (Drain) fier for Cellular/PCS and WCDMA wireless infrastruc‑
Pin 3
3Px Pin 6
ture
• Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
Pin 4 (Source) Pin 5 plications
Top View • General purpose discrete E-pHEMT for other high
Note: linearity applications
Package marking provides orientation and identification:
“x” = Date code indicates the month of manufacture.
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
3. Conforms to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Absolute Notes:
1. Operation of this device in excess of any one
Symbol Parameter Units Maximum of these parameters may cause permanent
VDS Drain–Source Voltage[2] V 7 damage.
VGS Gate–Source Voltage [2]
V -7 to 1 3. Board (package belly) temperatureTB is 25°C.
V
Gate Drain Voltage [2]
V -7 to 1 Derate 16 mW/°C for TB > 87°C.
GD
4. Thermal resistance measured using
I DS

Drain Current [2]
mA 300 150°C Liquid Crystal Measurement meth‑
od.
5. Device can safely handle +24 dBm RF Input
P diss

Total Power Dissipation [3]
W 1 Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit depen‑
Pin max. RF Input Power dBm +24 dent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6]

400 180 160
Cpk = 1.0 Cpk = 1.2
0.9 V
150 Stdev = 0.14 Stdev = 0.71
300 120
0.8 V 120
IDS (mA)

200 90 80
0.7 V
60
100 0.6 V 40
30
0.5 V
0 0 0
0 1 2 3 4 5 6 7 0 0.3 0.6 0.9 1.2 35 36 37 38 39 40 41
VDS (V) NF (dB) OIP3 (dBm)
Figure 1. Typical I-V Curves Figure 2. NF Figure 3. OIP3

Nominal = 0.6, USL = 1.0. LSL = 35.5, Nominal = 38.1.
(Vgs = 0.1 per step).
300 240
Cpk = 2.0 Stdev = 0.12
250 Stdev = 0.21 200
200 160

150 120
100 80
50 40
0 0
18.5 19.5 20.5 21.5 24.2 24.4 24.6 24.8 25 25.2
GAIN (dB) P1dB (dBm)
Figure 4. Small Signal Gain Figure 5. P1dB

LSL = 18.5, Nominal = 20.2 dB, USL = 21.5. Nominal = 24.6.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may
have nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, NF and VSWR. Circuit losses have

TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Vgs
Operational Gate Voltage Vds = 4V, Ids = 135 mA V — 0.68 —
Vth
Threshold Voltage Vds = 4V, Ids = 8 mA V — 0.3 —
Idss
Saturated Drain Current Vds = 4V, Vgs = 0V µA — 3.7 —
∆Vgs = Vgs1 - Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -10 -0.34 —
NF Noise Figure f = 2 GHz [1]
dB — 0.6 1
f = 900 MHz dB — 0.6 —
G Gain[1] f = 2 GHz dB 18.5 20 21.5
f = 900 MHz dB — 25 —
OIP3 Output 3rd Order f = 2 GHz dBm 35.5 38 —
Intercept Point[1,2] f = 900 MHz dBm — 37 —
P1dB Output 1dB f = 2 GHz dBm — 24.5 —
Compressed[1] f = 900 MHz dBm — 23 —
PAE Power Added Efficiency f = 2 GHz % — 57 —
f = 900 MHz % — 45 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc — -68 —
Power Ratio[1,3] Offset BW = 10 MHz dBc — -64 —
Notes:
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz

Line Including Γ_mag = 0.66 DUT Γ_mag = 0.09 Line and
Gate Bias T Γ_ang = -165° Γ_ang = 118° Drain Bias T
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.

2.2 pF

3.3 pF .02 λ .03 λ .03 λ .02 λ 4.7 pF
22 nH 12 nH
15 Ohm
2.2 µF
100 pF Drain
DC Supply
Gate
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmis-
sion line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions

The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent
bias. The gamma load and source over frequency are shown in the table below:

0.9 0.616 -37.1 0.249 130.0 40.3 16.5 23.4 43.2
2.0 0.310 34.5 0.285 168.3 41.5 13.4 24.8 51.9
3.9 0.421 167.5 0.437 -161.6 41.5 10.5 24.7 42.8
5.8 0.402 -162.8 0.418 -134.1 41.0 7.9 24.7 36.6

45 45 45
40 40 40
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
35 35 35
30 30 30
25 3V 25 3V 25 3V
4V 4V 4V
5V 5V 5V
20 20 20
75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180
Figure 8. OIP3 vs. Ids and Vds at 900 MHz. Figure 9. OIP3 vs. Ids and Vds at 2 GHz. Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
17 17 12
16 16 10
15 15
8
GAIN (dB)
GAIN (dB)
GAIN (dB)
14 14
6
13 13
4
12 12
3V 3V 3V
11 4V 11 4V 2 4V
5V 5V 5V
10 10 0
75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180
Figure 11. Small Signal Gain vs. Ids and Vds Figure 12. Small Signal Gain vs. Ids and Vds Figure 13. Small Signal Gain vs. Ids and Vds
at 900 MHz. at 2 GHz. at 3.9 GHz.
30 30 30
25 25 25
P1dB (dBm)
P1dB (dBM)
P1dB (dBm)
20 20 20
15 15 3V 15
3V 3V
4V 4V 4V
5V 5V 5V
10 10 10
75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180
Figure 14. P1dB vs. Idq and Vds at 900 MHz. Figure 15. P1dB vs. Idq and Vds at 2 GHz. Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.

60 60 60
50 50 50
40 40 40
PAE (%)
PAE (%)
PAE (%)
30 30 30
20 20 20
3V 3V 3V
10 4V 10 4V 10 4V
5V 5V 5V
0 0 0
75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180
Figure 17. PAE vs. Idq and Vds at 900 MHz. Figure 18. PAE vs. Idq and Vds at 2 GHz. Figure 19. PAE vs. Idq and Vds at 3.9 GHz.
45 12 30
10
40
SMALL SIGNAL GAIN (dB)
25
8
P1dB (dBm)
OIP3 (dBm)
35
6 20
30
4
3V
15 3V
25 3V
4V 2 4V 4V
5V 5V 5V
20 0 10
75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180
Ids (mA) Ids (mA) Idq (mA)
Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz. Figure 21. Small Signal Gain vs. Ids and Vds Figure 22. P1dB vs. Idq and Vds at 5.8 GHz.
at 5.8 GHz.
60
50
40
PAE (%)
30
20
3V
10 4V
5V
0
75 90 105 120 135 150 165 180
Idq (mA)
Figure 23. PAE vs. Idq and Vds at 5.8 GHz.
Note:

Tuned for Optimal OIP3, continued
45 20 30
40
15 25
OIP3 (dBm)
GAIN (dB)
35
P1dB (dBm)
10 20
30
-40°C 5 -40°C 15 -40°C

25 25°C
25°C 25°C
85°C 85°C 85°C
20 0 10
0.5 1.5 2.5 3.5 4.5 5.5 0.5 1.5 2.5 3.5 4.5 5.5 0.5 1.5 2.5 3.5 4.5 5.5
Figure 24. OIP3 vs. Temp and Freq. Figure 25. Small Signal Gain vs. Temp and Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA) Freq. (Tuned for optimal OIP3 at 4V, 135 mA) (Tuned for optimal OIP3 at 4V, 135 mA)
80
70
60
50
PAE (%)
40
30
20
-40°C
10 25°C
85°C
0
0.5 1.5 2.5 3.5 4.5 5.5
FREQUENCY (GHz)
Figure 27. PAE vs. Temp and Freq.

(Tuned for optimal OIP3 at 4V, 135 mA)
Note:

ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA
0.1 0.626 -59.4 33.20 45.702 154.5 -40.00 0.010 62.6 0.410 -44.4 36.60
0.2 0.704 -97.4 31.41 37.192 135.8 -35.92 0.016 48.8 0.384 -79.2 33.66
0.3 0.761 -119.4 29.53 29.950 123.5 -34.42 0.019 39.1 0.370 -101.8 31.98
0.4 0.794 -133.8 27.78 24.477 114.8 -33.56 0.021 33.7 0.360 -117.6 30.67
0.5 0.815 -142.5 26.32 20.693 108.9 -32.77 0.023 30.0 0.355 -127.1 29.54
0.6 0.824 -149.6 24.99 17.760 103.9 -32.77 0.023 27.4 0.351 -135.5 28.88
0.7 0.834 -155.1 23.82 15.516 99.9 -32.40 0.024 25.8 0.349 -141.9 28.11
0.8 0.840 -159.7 22.76 13.742 96.6 -32.40 0.024 24.6 0.349 -146.9 27.58
0.9 0.845 -163.3 21.83 12.346 93.6 -32.04 0.025 24.2 0.349 -151.1 26.94
1 0.848 -166.4 20.96 11.164 91.0 -32.04 0.025 23.8 0.347 -154.3 26.50
1.5 0.854 -177.7 17.59 7.579 80.6 -31.37 0.027 23.5 0.344 -165.8 24.48
1.9 0.857 175.9 15.60 6.024 73.9 -30.75 0.029 24.4 0.344 -171.2 23.17
2 0.853 174.4 15.36 5.863 72.6 -30.46 0.030 24.9 0.335 -171.8 22.91
2.4 0.853 168.9 13.79 4.894 66.5 -29.90 0.032 25.8 0.339 -176.8 21.85
3 0.855 161.6 11.83 3.902 57.9 -29.12 0.035 26.6 0.337 177.0 19.60
4 0.858 150.8 9.27 2.906 44.6 -27.74 0.041 26.5 0.356 168.5 16.23
5 0.864 140.7 7.20 2.292 31.6 -26.56 0.047 24.3 0.378 160.6 14.19
6 0.871 131.7 5.48 1.879 19.4 -25.35 0.054 21.2 0.402 152.4 12.69
7 0.869 123.5 4.04 1.593 7.5 -24.29 0.061 17.4 0.427 144.6 11.18
8 0.880 115.2 2.73 1.370 -4.3 -23.35 0.068 12.6 0.449 136.1 10.39
9 0.883 106.8 1.77 1.226 -16.1 -22.27 0.077 7.0 0.465 127.4 9.70
10 0.884 95.7 0.70 1.084 -29.0 -21.41 0.085 -0.8 0.489 116.6 8.70
11 0.874 85.1 -0.34 0.962 -41.6 -20.63 0.093 -8.8 0.505 106.0 7.20
12 0.874 74.1 -1.39 0.852 -52.8 -19.91 0.101 -16.6 0.544 97.2 6.30
13 0.877 63.3 -2.52 0.748 -64.5 -19.49 0.106 -24.6 0.596 85.9 5.46
14 0.884 57.9 -3.64 0.658 -74.6 -19.02 0.112 -31.9 0.638 74.7 4.95
15 0.894 46.8 -4.81 0.575 -85.4 -18.71 0.116 -39.8 0.662 65.9 4.29
16 0.896 43.3 -5.66 0.521 -93.6 -18.49 0.119 -47.8 0.699 56.1 4.06
17 0.898 31.9 -7.25 0.434 -102.6 -18.49 0.119 -55.1 0.748 47.7 2.82
18 0.918 20.8 -8.61 0.371 -110.5 -18.94 0.113 -62.6 0.718 39.3 1.75
Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA

40
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
30
MSG
0.5 0.50 0.20 166.00 0.041 28.26
2
0.9 0.59 0.25 169.00 0.044 24.27 20

1 0.60 0.35 171.00 0.036 24.15
MAG
1.5 0.72 0.40 173.00 0.039 21.14
10
2 0.81 0.57 -173.50 0.029 20.07
2.4 0.90 0.61 -167.70 0.033 18.73 S21
0
3 1.01 0.63 -163.50 0.041 16.91
3.5 1.10 0.67 -158.20 0.054 15.86
3.9 1.13 0.70 -153.90 0.068 15.12 -10
0 5 10 15 20
5 1.34 0.72 -142.70 0.139 13.08
FREQUENCY (GHz)
5.8 1.48 0.75 -135.40 0.229 12.04
6 1.58 0.76 -133.30 0.278 11.82 Figure 28. MSG/MAG & |S21|2 (dB)
7 1.68 0.80 -125.00 0.470 10.69 @ 4V, 180 mA.
8 1.89 0.84 -116.10 0.860 9.97
9 2.15 0.82 -106.90 1.170 8.96
10 2.34 0.85 -95.10 2.010 8.09
Notes:
calculated.

0.1 0.812 -56.4 34.07 50.547 151.8 -38.42 0.012 62.6 0.449 -49.1 36.25
0.2 0.820 -94.6 31.95 39.582 132.2 -34.89 0.018 45.8 0.425 -85.0 33.42
0.3 0.834 -117.3 29.87 31.147 120.2 -33.15 0.022 36.5 0.397 -108.1 31.51
0.4 0.842 -132.4 27.99 25.104 111.8 -32.40 0.024 30.5 0.385 -123.7 30.20
0.5 0.846 -141.4 26.46 21.036 106.3 -32.04 0.025 27.0 0.379 -132.5 29.25
0.6 0.849 -148.7 25.08 17.954 101.6 -31.70 0.026 24.8 0.375 -140.4 28.39
0.7 0.853 -154.4 23.88 15.628 97.9 -31.70 0.026 23.2 0.372 -146.4 27.79
0.8 0.853 -159.0 22.80 13.809 94.8 -31.37 0.027 22.4 0.372 -151.0 27.09
0.9 0.855 -162.7 21.85 12.376 92.0 -31.37 0.027 21.7 0.371 -154.9 26.61
1 0.857 -166.0 20.97 11.186 89.6 -31.37 0.027 21.2 0.369 -157.9 26.17
1.5 0.857 -177.3 17.58 7.568 79.7 -30.75 0.029 21.4 0.366 -168.7 24.17
1.9 0.857 176.2 15.57 6.007 73.3 -30.17 0.031 21.7 0.366 -174.2 22.87
2 0.853 174.7 15.34 5.847 72.0 -29.90 0.032 22.5 0.347 -174.8 22.62
2.4 0.852 169.2 13.77 4.879 66.0 -29.37 0.034 23.0 0.351 -179.7 21.57
3 0.853 161.7 11.80 3.889 57.6 -28.64 0.037 24.1 0.358 174.2 20.22
4 0.857 150.8 9.24 2.896 44.6 -27.54 0.042 23.9 0.375 165.7 16.28
5 0.861 140.9 7.18 2.285 31.8 -26.38 0.048 22.2 0.396 157.8 14.11
6 0.866 131.6 5.45 1.873 19.7 -25.19 0.055 18.6 0.417 149.6 12.50
7 0.867 123.5 4.02 1.589 7.9 -24.29 0.061 15.1 0.440 141.8 11.10
8 0.875 115.1 2.72 1.367 -3.8 -23.22 0.069 10.4 0.459 133.4 10.16
9 0.877 106.9 1.76 1.224 -15.3 -22.16 0.078 4.8 0.474 124.8 9.40
10 0.884 95.6 0.71 1.085 -28.2 -21.31 0.086 -2.6 0.496 114.1 8.69
11 0.889 85.3 -0.34 0.962 -41.0 -20.63 0.093 -10.7 0.511 103.7 7.93
12 0.872 73.9 -1.33 0.858 -51.7 -19.91 0.101 -18.3 0.548 95.1 6.24
13 0.878 63.6 -2.48 0.752 -64.0 -19.58 0.105 -26.2 0.600 84.0 5.55
14 0.886 57.6 -3.57 0.663 -73.7 -19.02 0.112 -33.3 0.640 73.1 5.05
15 0.902 47.2 -4.66 0.585 -84.8 -18.79 0.115 -42.0 0.663 64.4 4.93
16 0.902 43.7 -5.56 0.527 -91.3 -18.49 0.119 -49.2 0.698 54.7 4.37
17 0.895 32.1 -6.99 0.447 -101.9 -18.49 0.119 -56.7 0.746 46.5 2.93
18 0.932 20.6 -8.75 0.365 -109.6 -18.94 0.113 -63.9 0.716 38.2 2.36
Typical Noise Parameters, VDS = 4V, IDS = 135 mA

40
GHz dB Mag. Ang. dB
30
MSG
0.5 0.18 0.20 166.00 0.014 28.57
2
0.9 0.26 0.25 169.00 0.018 24.42 20

1 0.35 0.35 171.00 0.021 24.32
MAG
1.5 0.40 0.40 173.00 0.021 21.25 10
2 0.51 0.47 177.20 0.022 19.35
2.4 0.56 0.51 -174.50 0.022 17.66 S21
0
3 0.60 0.56 -169.30 0.023 16.37
3.5 0.73 0.60 -162.90 0.030 15.09
-10
3.9 0.83 0.66 -157.60 0.040 14.82 0 5 10 15 20
5 1.03 0.68 -145.50 0.085 12.76 FREQUENCY (GHz)
5.8 1.15 0.72 -137.10 0.140 11.55
@ 4V, 135 mA.
7 1.34 0.78 -126.70 0.300 10.55
8 1.57 0.83 -117.00 0.630 9.81
9 1.78 0.82 -107.90 0.880 8.86
10 1.83 0.85 -95.70 1.460 8.17
Notes:
calculated.

0.1 0.930 -51.3 33.70 48.399 152.3 -37.08 0.014 63.6 0.524 -45.7 35.39
0.2 0.889 -88.3 31.65 38.230 132.6 -32.77 0.023 46.8 0.467 -80.7 32.21
0.3 0.876 -111.6 29.58 30.121 120.6 -31.37 0.027 36.1 0.436 -103.2 30.48
0.4 0.867 -127.3 27.71 24.294 112.2 -30.75 0.029 29.5 0.415 -119.1 29.23
0.5 0.862 -137.0 26.18 20.379 106.6 -30.46 0.030 25.9 0.405 -128.4 28.32
0.6 0.858 -144.7 24.81 17.405 101.9 -30.17 0.031 23.1 0.397 -136.8 27.49
0.7 0.857 -151.0 23.62 15.165 98.2 -29.90 0.032 21.1 0.392 -143.2 26.76
0.8 0.856 -156.0 22.54 13.404 95.0 -29.90 0.032 19.9 0.390 -148.2 26.22
0.9 0.854 -160.0 21.59 12.005 92.2 -29.63 0.033 18.3 0.387 -152.3 25.61
1 0.857 -163.5 20.72 10.859 89.8 -29.63 0.033 18.2 0.384 -155.6 25.17
1.5 0.853 -175.7 17.33 7.351 79.8 -29.12 0.035 16.3 0.380 -167.2 23.22
1.9 0.853 177.6 15.33 5.839 73.3 -28.87 0.036 16.5 0.379 -173.2 22.10
2 0.848 176.2 15.09 5.681 72.0 -28.64 0.037 16.7 0.360 -173.8 21.86
2.4 0.846 170.3 13.52 4.742 66.0 -28.18 0.039 17.0 0.363 -179.0 20.85
3 0.848 162.4 11.55 3.780 57.5 -27.74 0.041 17.0 0.369 174.6 19.65
4 0.850 151.6 8.98 2.813 44.3 -26.94 0.045 16.7 0.385 165.7 16.29
5 0.853 141.4 6.93 2.220 31.5 -25.85 0.051 15.4 0.405 157.5 13.90
6 0.861 132.3 5.22 1.824 19.4 -25.04 0.056 12.9 0.426 149.2 12.31
7 0.861 123.8 3.78 1.546 7.5 -24.01 0.063 9.8 0.447 141.3 10.85
8 0.868 115.6 2.50 1.334 -4.3 -23.22 0.069 5.5 0.467 132.8 9.85
9 0.873 107.1 1.51 1.190 -15.9 -22.16 0.078 0.4 0.481 124.1 9.15
10 0.875 95.8 0.50 1.059 -28.8 -21.41 0.085 -6.6 0.501 113.3 8.19
11 0.881 85.6 -0.57 0.937 -41.2 -20.63 0.093 -13.8 0.515 102.9 7.40
12 0.871 74.2 -1.56 0.836 -52.5 -20.00 0.100 -21.4 0.553 94.5 6.12
13 0.873 63.7 -2.65 0.737 -63.9 -19.66 0.104 -28.8 0.604 83.4 5.28
14 0.885 57.0 -3.80 0.646 -74.0 -19.17 0.110 -36.3 0.644 72.5 4.89
15 0.891 47.0 -4.72 0.581 -85.2 -18.79 0.115 -43.7 0.666 63.7 4.38
16 0.912 43.7 -5.76 0.515 -93.5 -18.56 0.118 -51.7 0.700 54.2 5.43
17 0.895 32.2 -7.15 0.439 -102.3 -18.49 0.119 -58.5 0.748 46.0 2.90
18 0.933 21.2 -8.66 0.369 -110.5 -19.02 0.112 -65.8 0.718 37.8 2.74

40
GHz dB Mag. Ang. dB
30
MSG
0.5 0.15 0.10 130.00 0.016 27.97
2
0.9 0.20 0.15 135.00 0.019 23.50 20

1 0.22 0.20 143.00 0.019 23.02
MAG
1.5 0.30 0.30 148.00 0.022 20.07 10
2 0.36 0.35 154.10 0.024 17.85
2.4 0.44 0.43 168.70 0.022 16.35 S21
0
3 0.50 0.47 179.30 0.022 15.29
3.5 0.55 0.58 -170.80 0.019 14.11
-10
3.9 0.63 0.60 -164.80 0.024 14.01 0 5 10 15 20
5 0.80 0.67 -150.90 0.050 11.92 FREQUENCY (GHz)
5.8 0.90 0.72 -140.80 0.095 11.00
@ 4V, 75 mA.
7 1.14 0.71 -129.10 0.180 9.80
8 1.24 0.74 -119.90 0.285 9.31
9 1.49 0.74 -109.70 0.460 8.41
10 1.61 0.76 -97.30 0.720 7.73
Notes:
calculated.
10
0.1 0.805 -56.0 34.11 50.734 152.1 -39.17 0.011 62.6 0.468 -45.2 36.64
0.2 0.815 -94.0 32.03 39.967 132.6 -34.89 0.018 46.6 0.419 -79.7 33.46
0.3 0.831 -116.9 29.97 31.517 120.5 -33.56 0.021 36.3 0.387 -102.0 31.76
0.4 0.839 -131.7 28.10 25.418 112.1 -32.77 0.023 30.7 0.364 -117.9 30.43
0.5 0.844 -140.9 26.58 21.322 106.4 -32.40 0.024 27.2 0.354 -127.0 29.49
0.6 0.846 -148.3 25.20 18.207 101.8 -32.04 0.025 24.9 0.346 -135.4 28.62
0.7 0.850 -154.0 24.00 15.852 98.0 -31.70 0.026 23.3 0.342 -141.6 27.85
0.8 0.852 -158.7 22.93 14.014 94.8 -31.70 0.026 22.3 0.339 -146.5 27.32
0.9 0.855 -162.5 21.98 12.559 92.0 -31.70 0.026 21.6 0.337 -150.5 26.84
1 0.854 -165.6 21.10 11.351 89.6 -31.37 0.027 20.9 0.335 -153.9 26.24
1.5 0.855 -177.1 17.71 7.681 79.5 -31.06 0.028 21.1 0.331 -165.0 24.38
1.9 0.857 176.3 15.71 6.099 73.0 -30.46 0.030 22.3 0.331 -170.4 23.08
2 0.851 174.9 15.46 5.931 71.7 -30.17 0.031 22.3 0.336 -170.9 22.82
2.4 0.851 169.4 13.89 4.946 65.6 -29.63 0.033 23.3 0.315 -175.8 21.76
3 0.852 161.8 11.92 3.943 57.1 -29.12 0.035 24.3 0.323 178.2 19.82
4 0.857 151.1 9.35 2.935 43.9 -27.74 0.041 24.4 0.343 169.9 16.43
5 0.859 141.0 7.30 2.318 30.9 -26.56 0.047 22.8 0.367 162.1 14.19
6 0.870 131.8 5.57 1.899 18.5 -25.51 0.053 19.7 0.391 154.0 12.82
7 0.867 123.6 4.11 1.605 6.5 -24.44 0.060 16.3 0.417 146.2 11.24
8 0.877 115.6 2.80 1.381 -5.2 -23.48 0.067 11.8 0.440 137.7 10.41
9 0.881 106.7 1.82 1.233 -17.0 -22.38 0.076 6.1 0.458 129.1 9.75
10 0.885 95.6 0.75 1.090 -30.1 -21.41 0.085 -1.3 0.482 118.1 8.94
11 0.892 85.2 -0.30 0.966 -42.9 -20.72 0.092 -9.1 0.500 107.5 8.31
12 0.875 74.2 -1.33 0.858 -54.3 -20.00 0.100 -17.0 0.540 98.6 6.52
13 0.883 63.8 -2.49 0.751 -65.9 -19.66 0.104 -24.8 0.593 87.1 5.87
14 0.886 57.9 -3.58 0.662 -76.4 -19.09 0.111 -31.8 0.636 75.8 5.23
15 0.913 47.4 -4.78 0.577 -86.8 -18.71 0.116 -40.3 0.660 66.8 6.01
16 0.908 43.1 -5.81 0.512 -94.4 -18.56 0.118 -47.8 0.699 57.0 4.78
17 0.891 32.2 -6.99 0.447 -105.1 -18.49 0.119 -54.9 0.747 48.4 2.98
18 0.928 20.6 -8.64 0.370 -112.1 -18.86 0.114 -62.6 0.717 39.9 2.41

40
GHz dB Mag. Ang. dB
30
MSG
0.5 0.45 0.20 154.00 0.037 28.85
2
0.9 0.48 0.32 160.00 0.032 25.13 20

1 0.50 0.35 166.00 0.030 24.43 MAG
1.5 0.55 0.40 170.00 0.030 21.26 10
2 0.65 0.46 177.40 0.030 19.38
S21
2.4 0.70 0.49 -175.10 0.032 17.90 0
3 0.77 0.55 -168.90 0.031 16.33
3.5 0.84 0.58 -162.60 0.037 15.23
-10
3.9 0.90 0.62 -158.20 0.043 14.60 0 5 10 15 20
5 1.06 0.66 -145.80 0.085 12.66 FREQUENCY (GHz)
5.8 1.20 0.69 -137.30 0.140 11.60
6 1.19 0.69 -135.40 0.150 11.38
@ 5V, 135 mA.
7 1.40 0.77 -126.50 0.320 10.55
8 1.52 0.81 -117.90 0.550 9.84
9 1.75 0.82 -107.50 0.890 9.05
10 1.88 0.85 -95.60 1.530 8.29
Notes:
calculated.
11
0.1 0.823 -57.1 33.96 49.888 151.3 -37.72 0.013 62.6 0.427 -55.1 35.84
0.2 0.826 -95.6 31.82 38.989 131.6 -33.98 0.020 45.7 0.418 -92.8 32.90
0.3 0.842 -118.2 29.66 30.415 119.6 -32.77 0.023 36.0 0.421 -115.9 31.21
0.4 0.846 -133.1 27.75 24.416 111.4 -32.04 0.025 30.1 0.420 -130.7 29.90
0.5 0.851 -142.0 26.21 20.452 105.9 -31.70 0.026 26.8 0.419 -139.0 28.96
0.6 0.850 -149.2 24.83 17.443 101.4 -31.37 0.027 24.4 0.419 -146.4 28.10
0.7 0.855 -154.9 23.62 15.178 97.7 -31.37 0.027 22.9 0.419 -151.9 27.50
0.8 0.856 -159.5 22.55 13.405 94.7 -31.06 0.028 22.1 0.420 -156.1 26.80
0.9 0.859 -163.2 21.59 12.012 92.0 -31.06 0.028 21.4 0.421 -159.7 26.32
1 0.857 -166.3 20.71 10.853 89.6 -30.75 0.029 21.1 0.419 -162.6 25.73
1.5 0.857 -177.7 17.32 7.342 79.9 -30.46 0.030 21.0 0.418 -172.9 23.89
1.9 0.858 175.8 15.31 5.828 73.6 -29.90 0.032 21.6 0.418 -178.2 22.60
2 0.855 174.4 15.08 5.676 72.3 -29.37 0.034 22.1 0.410 -179.1 22.23
2.4 0.855 168.8 13.51 4.738 66.4 -29.12 0.035 22.6 0.403 176.0 21.32
3 0.854 161.4 11.54 3.774 58.2 -28.40 0.038 22.8 0.409 169.8 19.97
4 0.858 150.7 8.98 2.812 45.3 -27.13 0.044 22.7 0.423 161.0 16.15
5 0.860 140.4 6.92 2.219 32.8 -26.02 0.050 20.7 0.440 152.8 13.82
6 0.868 131.4 5.21 1.821 21.0 -24.88 0.057 17.2 0.457 144.4 12.31
7 0.866 123.2 3.79 1.547 9.4 -23.88 0.064 13.4 0.475 136.6 10.81
8 0.877 114.8 2.52 1.337 -2.0 -22.85 0.072 8.5 0.490 128.0 10.00
9 0.876 106.3 1.57 1.198 -13.7 -21.83 0.081 2.6 0.502 119.3 9.09
10 0.880 95.1 0.56 1.066 -26.0 -21.11 0.088 -5.0 0.519 108.7 8.20
11 0.883 84.7 -0.46 0.948 -38.2 -20.35 0.096 -12.9 0.530 98.4 7.31
12 0.874 73.6 -1.51 0.840 -49.6 -19.83 0.102 -20.7 0.566 90.7 6.06
13 0.878 62.9 -2.56 0.745 -61.1 -19.41 0.107 -28.5 0.613 79.7 5.32
14 0.884 56.9 -3.54 0.665 -71.0 -18.94 0.113 -35.9 0.652 69.3 4.87
15 0.906 46.7 -4.70 0.582 -80.8 -18.71 0.116 -43.9 0.670 60.8 4.76
16 0.907 42.9 -5.61 0.524 -88.0 -18.49 0.119 -51.4 0.704 51.6 4.29
17 0.893 32.2 -6.80 0.457 -99.8 -18.42 0.120 -58.7 0.747 43.7 2.90
18 0.925 20.7 -8.38 0.381 -107.2 -18.86 0.114 -66.3 0.717 35.8 2.20

40
GHz dB Mag. Ang. dB
30
MSG
0.5 0.25 0.20 166.00 0.020 28.47
2
0.9 0.30 0.25 169.00 0.022 24.36 20

1 0.30 0.35 171.00 0.018 24.24
MAG
1.5 0.36 0.40 173.00 0.019 21.17 10
2 0.45 0.46 176.80 0.020 19.30
2.4 0.52 0.52 -174.70 0.021 18.08 S21
0
3 0.66 0.56 -169.80 0.025 16.26
3.5 0.70 0.62 -162.80 0.028 15.33
3.9 0.87 0.65 -157.90 0.042 14.62 -10
0 5 10 15 20
5 1.02 0.67 -145.70 0.082 12.52 FREQUENCY (GHz)
5.8 1.13 0.71 -136.80 0.140 11.53
7 1.34 0.82 -126.20 0.380 10.57 @ 3V, 135 mA.
8 1.58 0.83 -116.90 0.645 9.67
9 1.78 0.81 -107.50 0.870 8.59
10 1.88 0.83 -95.40 1.350 7.76
Notes:
calculated.
12
Device Models
Refer to Avago Technologies' Web Site
www.avagotech.com/rf
ATF-531P8-TR1 3000 7” Reel
ATF-531P8-TR2 10000 13”Reel
D1
D
P pin1
pin1
1 8
2 7
E1
R
e
3
3PX 6
E
4 5
L b
A A1 A
A2
Side View End View
DIMENSIONS

A 0.70 0.75 0.80
A1 0 0.02 0.05
A2 0.203 REF
b 0.225 0.25 0.275
D 1.9 2.0 2.1
D1 0.65 0.80 0.95
E 1.9 2.0 2.1
E1 1.45 1.6 1.75
e 0.50 BSC
P 0.20 0.25 0.30
L 0.35 0.40 0.45
13
2.80 (110.24) 2.72 (107.09)
0.70 (27.56) 0.63 (24.80)

0.25 (9.84) 0.22 (8.86)
0.25 (9.84) 0.32 (12.79)

PIN 1 PIN 1
φ0.20 (7.87) 0.50 (19.68) 0.50 (19.68)

1.60 (62.99) 1.54 (60.61)
Solder + 0.28 (10.83) 0.25 (9.74)
mask
RF 0.60 (23.62) 0.63 (24.80)

0.72 (28.35)
line
0.15 (5.91)
0.55 (21.65)
Device Orientation
REEL 4 mm
8 mm
3PX 3PX 3PX 3PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
14
Tape Dimensions
P P0 P2
D
F
W
+ +
D1
t1 Tt
K0
10° Max 10° Max
A0 B0
CAVITY LENGTH A0 2.30 ± 0.05 0.091 ± 0.004

WIDTH B0 2.30 ± 0.05 0.091 ± 0.004
DEPTH K0 1.00 ± 0.05 0.039 ± 0.002
PITCH P 4.00 ± 0.10 0.157 ± 0.004

PITCH P0 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004

8.00 – 0.10 0.315 ± 0.004
THICKNESS t1 0.254 ± 0.02 0.010 ± 0.0008


(WIDTH DIRECTION)
(LENGTH DIRECTION)
AV02-0845EN - August 26, 2008
VMMK-1218
0.5 to 18 GHz Low Noise E-PHEMT
in a Wafer Scale Package
Data Sheet
Avago Technologies has combined it’s industry leading • Sub-miniature 0402 (1mm x 0.5mm) Surface Mount
E-pHEMT technology with a revolutionary chip scale Leadless Package
package. The VMMK-1218 can produce an LNA with • Low height (0.25mm)
high dynamic range, high gain and low noise figure that • Frequency Range 0.5 to 18 GHz
generates off of a single position DC power supply. The • Enhancement Mode [1]
GaAsCap wafer scale sub-miniature leadless package is
• 0.25 micron gate width
small and ultra thin, yet can be handled and placed with
standard 0402 pick and place assembly. • Tape and Reel packaging option available
• Point MTTF > 300 years at 120oC channel temperature
The use of 0.25 micron gates allow a ultra low noise figure
(below 1dB from 500 MHz to 12 GHz) with respectable as- Specifications
sociated gain. With a flat transconductance over bias and
• 0.7 dB Fmin
frequency the VMMK-1218 provides excellent linearity
of over 30 dBm and power over 15 dBm at one dB com- • 9.0 dB Ga
pression. This product is easy to use since it requires only • +22 dBm output 3rd order intercept
positive DC voltages for bias and low matching coeffi- • +12 dBm output power
cients for simple impedance matching to 50 Ω systems.
The VMMK-1218 is intended for any 500MHz to 18GHz ap-
Applications
plication including 802.11abgn WLAN, WiMax, BWA 802.16 • Low Noise and Driver for Cellular/PCS and WCDMA
& 802.20 and military applications. Base Stations
• 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
GaAsCap 0402, 1.0mm x 0.5mm x 0.25mm computer, access point and mobile wireless
applications
• DBS 10 to 13 GHz receivers
YY • VSAT and SATCOM 13 to 18 GHz systems
•B
Gate • BYY Drain
• 802.16 & 802.20 BWA systems
• WLL and MMDS Transceivers
Pin Connections (Top View) • General purpose discrete E-pHEMT for other ultra low
noise applications
Notes: Top view package marking provides orientation Notes:
1. The Avago enhancement mode pHEMT devices do not require a
negative gate bias voltage as they are “normally off”. They can help
simplify the design and reduce the cost of receivers and transmitters
in many applications from 500 MHz to 18 GHz

ESD Machine Model = MM20 V (class A)
gate source drain ESD Human Body Model = 100 V (Class 0)
Notes:
“b” = Device Code
Electrostatic Discharge, Damage and Control.
“YY” = Year Code
VMMK-1218 Absolute Maximum Ratings
Sym Parameters/Condition Unit Max
Vds Drain-Source Voltage[2] V 5
Vgs Gate-Source Voltage[2] V -5 to 1
Vgd Gate-Drain Voltage[2] V -5 to 1
Ids Drain Current[2] mA 100
Igs Gate Current mA 1.6
Pdn Total Power Dissipation[3] mW 300
Pin RF CW Input Power Max dBm 10
Tch Max channel temperature C +150
θjc Thermal Resistance[4] C/W 200
70 Notes:
0.7 V 1. Operation in excess of any of these conditions may results in
60 permanent damage to this device.
2. Assumes DC quiescent conditions
50 3. Ambient operational temperature TA=25°C unless noted.
0.6 V 4. Thermal resistance measured using 150°C Liquid Crystal Measurement
40 Method
lDS (mA)
30 5. The device can handle + 10dBm RF input power provided lgs is

limited to 1ma
0.5 V
20
10 0.4 V
0 0.3 V
0 1 2 3 4 5 6 7
VDS (V)
Figure 1. Typical I-V Curves. (VGS=0.1 V per step)
VMMK-1218 RF Specifications (on board) [6,7]

TA = 25°C, Freq = 10 GHz, Vds = 3V, Ids = 20mA, Zo = 50 Ω (unless otherwise specified)
Sym Parameters/Condition Units Min Typ. Max

Vgs Gate Voltage V 0.48 0.58 0.68
Igs Gate Current uA 0.4
Gm Transconductance mS 200
Ga Associated Gain dB 6.7 9 10.2
NF Noise Figure dB 0.81 1.5
Fmin Noise Figure min dB 0.71
P-1dB 1dB Compressed Output Power dBm +12
OIP3 Output 3rd Order Intercept Point dBm +22
Notes:
6. Specifications are derived from measurements in a test circuit.
7. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain.

Product Consistency Distribution Charts [1]
Figure 2. Gate Voltage @ Vds = 3V & Ids = 20mA, Figure 3. Gain @ 10 GHz, LSL=6.7, Nominal=9.0, Figure 4. NF @ 10 GHz, Nominal=0.81, USL=1.50,
LSL=0.48, Nominal=0.58, USL=0.68, CPK=2.2 USL=10.2, CPK=1.1 CPK=1.8
Note:
1. Distribution data based at least 500 part sample size from two wafers during initial characterization of this product. Future wafers allocated to this
product may have nominal values anywhere between upper and lower limits.
VMMK-1218 Typical Performance Curve

25.00 35
30
20.00
25
15.00
OIP3 (dBm)
20
S21 (dB)
15 1.5V
10.00
10 2V
5.00 3V
5 4V
0.00 0
0 5 10 15 20 0 5 10 15 20 25
FREQUENCY (GHz) Ids (mA)
Figure 5. S21 vs. Frequency at 2V, 20mA Figure 6. OIP3 vs. Ids at 10 GHz (Zi = Zo = 50Ω)
1.6 16
1.2 12
Fmin (dB)
P1dB (dBm)
0.8 8
1.5V
2V
0.4 4
3V
4V
0 0
0 5 10 15 20 0 5 10 15 20 25
Figure 7. Fmin vs. Frequency at 2V, 20mA Figure 8. P1dB vs. Ids at 10 GHz (Zi = Zo = 50Ω)

16 30
25
12
20
OIP3 (dBm)
S21 (dB)
8 15
1.5V
2V 10
4 -40C
3V 25C
5
4V 85C
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Ids (mA) Id (mA)
Figure 9. Gain vs. Ids at 10 GHz Figure 10. OIP3 vs. Ids at 2V over temperature at 10 GHz
30
25
20
OIP3 (dBm)
15
10
-40C
25C
5
85C
0
0 5 10 15 20 25
Id (mA)
Figure 11. OIP3 vs. Ids at 3V over temperature at 10 GHz

VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=2V, Ids=20mA [1]
Freq S11 S21 S12 S22 MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
2 0.89 -78.16 20.92 11.12 129.71 0.06 44.50 0.54 -55.65 29.35
3 0.85 -106.33 19.31 9.23 112.05 0.07 29.40 0.47 -76.55 25.87
4 0.81 -128.95 17.70 7.68 97.65 0.08 17.41 0.41 -94.12 23.11
5 0.79 -146.66 16.25 6.49 85.78 0.08 7.80 0.37 -108.21 21.15
6 0.78 -161.38 14.93 5.58 75.40 0.09 -0.22 0.34 -120.69 19.57
7 0.78 -173.77 13.74 4.86 66.04 0.09 -7.10 0.32 -131.78 18.21
8 0.77 175.63 12.65 4.29 57.40 0.09 -13.35 0.31 -141.77 17.06
9 0.77 166.49 11.64 3.82 49.36 0.09 -18.82 0.31 -151.17 16.03
10 0.78 158.16 10.71 3.43 41.75 0.08 -24.10 0.30 -159.09 15.12
11 0.78 150.76 9.87 3.12 34.59 0.08 -28.99 0.31 -166.30 14.31
12 0.78 143.93 9.09 2.85 27.60 0.08 -33.20 0.31 -173.04 13.61
13 0.78 137.52 8.38 2.62 20.89 0.08 -37.50 0.32 -179.45 12.97
14 0.79 131.39 7.71 2.43 14.43 0.08 -41.46 0.32 174.80 12.39
15 0.79 125.61 7.11 2.27 8.03 0.08 -45.30 0.33 169.68 11.86
16 0.79 119.69 6.53 2.12 1.59 0.07 -49.20 0.34 164.86 11.37
17 0.80 113.87 6.01 2.00 -4.80 0.07 -52.04 0.35 160.03 10.95
18 0.80 108.30 5.50 1.88 -10.80 0.07 -55.52 0.36 155.48 10.54
Typical Noise Parameters

Freq Fmin Г opt Г opt Rn/50 Ga MSG/MAG
30.00
GHz dB Mag. Ang. dB S21
MSG/MAG and S21 (dB)
2 0.17 0.727 30.9 0.1 20.9

20.00
3 0.24 0.624 46.2 0.1 19.16
4 0.31 0.534 61.1 0.09 17.57
5 0.38 0.457 75.8 0.08 16.12 10.00
6 0.44 0.394 90.1 0.08 14.83
7 0.51 0.344 104.1 0.07 13.69 0.00
8 0.58 0.307 117.8 0.07 12.69 0 5 10 15 20
FREQUENCY GHz
9 0.65 0.283 131.2 0.06 11.84
10 0.72 0.273 144.3 0.06 11.14 Figure 12. MSG/MAG and S21 vs. Frequency at 2V 20 mA
11 0.78 0.276 157.1 0.06 10.59
12 0.85 0.292 169.6 0.06 10.19
13 0.92 0.322 -178.2 0.06 9.94
14 0.99 0.365 -166.3 0.06 9.83
15 1.05 0.421 -154.8 0.06 9.87
16 1.12 0.49 -143.5 0.07 10.07
17 1.19 0.573 -132.6 0.08 10.41
Note:
1. S-parameters are measured in 50 Ohm test environment.

VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=1.5V, Ids=20mA [1]
2 0.89 -78.70 20.79 10.95 129.60 0.07 44.02 0.52 -63.66 28.91
3 0.84 -106.97 19.15 9.07 111.99 0.08 28.78 0.46 -87.65 25.57
4 0.80 -129.59 17.52 7.52 97.71 0.09 16.70 0.42 -107.45 22.87
5 0.79 -147.25 16.06 6.35 86.00 0.09 7.26 0.39 -123.04 20.94
6 0.78 -161.95 14.74 5.46 75.76 0.10 -1.08 0.37 -136.55 19.39
7 0.77 -174.30 13.53 4.75 66.54 0.10 -7.98 0.36 -148.06 18.04
8 0.77 175.11 12.45 4.19 58.04 0.10 -14.20 0.35 -158.27 16.90
9 0.77 165.97 11.42 3.72 50.15 0.09 -19.91 0.35 -167.52 15.86
10 0.77 157.70 10.49 3.35 42.68 0.09 -25.19 0.35 -175.45 14.95
11 0.77 150.33 9.65 3.04 35.68 0.09 -30.03 0.35 177.45 14.14
12 0.77 143.54 8.87 2.78 28.84 0.09 -34.60 0.36 171.04 13.44
13 0.78 137.15 8.15 2.56 22.27 0.09 -38.83 0.36 164.96 12.80
14 0.78 131.00 7.49 2.37 15.98 0.09 -43.10 0.37 159.55 12.22
15 0.78 125.21 6.88 2.21 9.72 0.08 -47.12 0.37 154.60 11.66
16 0.79 119.39 6.31 2.07 3.42 0.08 -51.06 0.38 150.08 11.18
17 0.79 113.54 5.80 1.95 -2.83 0.08 -54.94 0.39 145.54 10.75
18 0.79 107.95 5.29 1.84 -8.68 0.08 -58.30 0.40 141.40 10.32

40.00
Freq Fmin Г opt Г opt Rn/50 Ga
MSG/MAG
2 0.16 0.717 32.4 0.10 21.86 30.00
3 0.24 0.620 48.1 0.10 19.89

4 0.31 0.536 63.5 0.09 18.08 20.00
5 0.39 0.464 78.4 0.08 16.45
6 0.47 0.405 93.0 0.08 14.99 10.00
7 0.55 0.359 107.1 0.07 13.70
8 0.63 0.326 120.7 0.06 12.59 0.00
9 0.70 0.305 134.0 0.06 11.64 0 5 10 15 20
FREQUENCY GHz
10 0.78 0.297 146.9 0.06 10.87
11 0.86 0.302 159.3 0.06 10.27 Figure 13. MSG/MAG and S21 vs. Frequency at 1.5V 20 mA
12 0.94 0.319 171.3 0.05 9.84
13 1.02 0.349 -177.1 0.05 9.59
14 1.09 0.392 -165.9 0.05 9.51
15 1.17 0.447 -155.1 0.05 9.59
16 1.25 0.515 -144.8 0.06 9.85
17 1.33 0.596 -134.8 0.08 10.29
Note:

2 0.90 -78.41 20.88 11.07 129.30 0.05 44.78 0.59 -45.41 29.71
3 0.85 -106.62 19.27 9.19 111.50 0.06 29.68 0.50 -61.56 26.11
4 0.82 -129.23 17.67 7.65 96.89 0.07 17.84 0.43 -74.78 23.29
5 0.80 -146.90 16.21 6.47 84.82 0.07 8.51 0.38 -85.37 21.29
6 0.79 -161.57 14.90 5.56 74.28 0.07 0.60 0.35 -94.96 19.70
7 0.78 -173.94 13.71 4.85 64.67 0.07 -6.02 0.32 -103.77 18.32
8 0.78 175.49 12.63 4.28 55.85 0.07 -12.05 0.31 -112.18 17.17
9 0.78 166.35 11.62 3.81 47.60 0.07 -17.59 0.30 -120.67 16.14
10 0.78 158.10 10.70 3.43 39.76 0.07 -22.09 0.29 -128.21 15.23
11 0.79 150.68 9.87 3.11 32.39 0.07 -26.72 0.29 -135.58 14.44
12 0.79 143.93 9.09 2.85 25.16 0.07 -30.99 0.30 -142.88 13.76
13 0.79 137.47 8.38 2.62 18.21 0.07 -34.81 0.31 -149.97 13.11
14 0.80 131.33 7.71 2.43 11.48 0.06 -38.24 0.31 -156.46 12.54
15 0.80 125.54 7.11 2.27 4.87 0.06 -40.97 0.33 -162.44 12.02
16 0.80 119.64 6.53 2.12 -1.87 0.06 -44.55 0.34 -168.20 11.55
17 0.81 113.80 6.00 2.00 -8.47 0.06 -46.49 0.35 -174.07 11.14
18 0.81 108.24 5.48 1.88 -14.69 0.06 -49.45 0.36 -179.63 10.72

40.00
S21
GHz dB Mag. Ang. dB
30.00
2 0.16 0.72 30.40 0.10 20.29

3 0.23 0.62 45.50 0.10 18.62
20.00
4 0.30 0.53 60.30 0.09 17.08
5 0.37 0.45 74.80 0.08 15.69
10.00
6 0.44 0.39 89.10 0.08 14.44
7 0.50 0.34 103.00 0.07 13.34
0.00
8 0.57 0.30 116.70 0.07 12.37 0 5 10 15 20
FREQUENCY GHz
9 0.64 0.28 130.10 0.07 11.55
10 0.71 0.27 143.20 0.06 10.87 Figure 14. MSG/MAG and S21 vs. Frequency at 3V 20 mA
11 0.77 0.27 156.00 0.06 10.34
12 0.84 0.29 168.60 0.06 9.95
13 0.91 0.31 -179.20 0.06 9.70
14 0.98 0.36 -167.20 0.06 9.59
15 1.05 0.41 -155.50 0.06 9.63
16 1.11 0.48 -144.10 0.07 9.81
17 1.18 0.56 -132.90 0.08 10.13
Note:

Small Signal Model Parameters
Parameter Value Parameter Value Parameter Value Parameter Value
Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5
Id (mA) 5 Id (mA) 10 Id (mA) 15 Id (mA) 20
Gm 0.1162 Gm 0.2019 Gm 0.2374 Gm 0.3249
tau 0.00188 tau 0.002388 tau 0.002702 tau 0.00271
Cgs 0.5131 Cgs 0.6732 Cgs 0.8077 Cgs 0.929
Rgs 0.2126 Rgs 0.02638 Rgs 0.02069 Rgs 0.0304
Cgd 0.06932 Cgd 0.06226 Cgd 0.0777 Cgd 0.07133
Cds 0.1587 Cds 0.1574 Cds 0.1606 Cds 0.1597
Rds 334.70 Rds 187.10 Rds 154.10 Rds 123.80

Vd (V) 2 Vd (V) 2 Vd (V) 2 Vd (V) 2
Gm 0.1159 Gm 0.1992 Gm 0.1992 Gm 0.3199
tau 0.002146 tau 0.002394 tau 0.002394 tau 0.00257
Cgs 0.5661 Cgs 0.7445 Cgs 0.7445 Cgs 1.04381
Rgs 0.2293 Rgs 0.01936 Rgs 0.01936 Rgs 0.01756
Cgd 0.07976 Cgd 0.0726 Cgd 0.0726 Cgd 0.0606
Cds 0.1631 Cds 0.16078 Cds 0.16078 Cds 0.1607
Rds 357.50 Rds 222.00 Rds 222.00 Rds 141.70

Vd (V) 3 Vd (V) 3 Vd (V) 3 Vd (V) 3
Gm 0.1112 Gm 0.193 Gm 0.258 Gm 0.3119
tau 0.00249 tau 0.0025 tau 0.00252 tau 0.002487
Cgs 0.6365 Cgs 0.8786 Cgs 1.08192 Cgs 1.26
Rgs 0.007447 Rgs 0.1353 Rgs 0.01 Rgs 0.0271
Cgd 0.06521 Cgd 0.0582 Cgd 0.053 Cgd 0.04772
Cds 0.1603 Cds 0.1595 Cds 0.1601 Cds 0.1595
Rds 438.90 Rds 260.60 Rds 209.10 Rds 172.90

Vd (V) 4 Vd (V) 4 Vd (V) 4 Vd (V) 4
Gm 0.1088 Gm 0.1909 Gm 0.2509 Gm 0.3053
tau 0.00264 tau 0.002635 tau 0.002613 tau 0.00261
Cgs 0.6765 Cgs 0.9774 Cgs 1.203 Cgs 1.412
Rgs 0.00818 Rgs 0.1478 Rgs 0.01263 Rgs 0.02727
Cgd 0.05762 Cgd 0.05065 Cgd 0.04603 Cgd 0.04153
Cds 0.1565 Cds 0.1573 Cds 0.1574 Cds 0.1579
Rds 564.30 Rds 312.10 Rds 242.20 Rds 200.30

VMMK-1218 ADS Model
CAP
ID=C6
C=Cpgd pF
CAP
ID=C4
C=Cgd pF
PORT IND RES RES IND PORT
P=1 ID=L1 ID=R3 ID=R2 ID=L2 P=2
Z=50 Ohm L=Lg nH R=Rg Ohm R=Rd Ohm L=Ld nH Z=50 Ohm
1 3
2 4
CAP CAP
ID=C1 VCCS ID=C2
C=Cgs pF ID=U1 C=Cds pF
M=Gm S
A=0 Deg
CAP
RES R1=1e100 Ohm
ID=C5
CAP ID=R1 R2=Rds Ohm
C=Cpds pF
ID=C3 R=Rgs Ohm F=0 GHz
C=Cpgs pF T=tau ns
RES
ID=R4
R=Rs Ohm
IND
ID=L3
L=Ls nH
PORT
P=3
Rg Value
Z=50 Ohm
Rg 4.729
Rd 1.29495
RsG 2.283
C pgs 0.0475
C pds 0.0318
C pgd 0.00417
Ls 0.000559
Lg 0.32446
Ld 0.2602

Outline Drawing Recommended SMT Attachment
Top and Side View The VMMK Packaged Devices are compatible with high
volume surface mount PCB assembly processes.
Manual Assembly for Prototypes

0.5mm BYY 1. Follow ESD precautions while handling packages.
2. Handling should be along the edges with tweezers or
from topside if using a vacuum collet.
0.25mm
1.05mm 3. Recommended attachment is solder paste. Please
see Figure 8 for recommended solder reflow profile.
Conductive epoxy is not recommended. Hand
Bottom View soldering is not recommended.
4. Apply solder paste using either a stencil printer or
0.8mm dot placement. The volume of solder paste will be
dependent on PCB and component layout and should
0.7mm be controlled to ensure consistent mechanical and
electrical performance. Excessive solder will degrade
0.3mm RF performance.
0.2mm 5. Follow solder paste and vendor’s recommendations
when developing a solder reflow profile. A standard
profile will have a steady ramp up from room
temperature to the pre-heat temp to avoid damage
due to thermal shock.
6. Packages have been qualified to withstand a peak
0.5mm
temperature of 260ºC for 20 to 40 sec. Verify that the

profile will not expose device beyond these limits.
7. Clean off flux per vendor’s recommendations.
8. Clean the module with Acetone. Rinse with alcohol.
Allow the module to dry before testing.
Notes:
1. • indicates pin 1
2. Dimensions are in millimeters 300
3. Pad Material is minimum 5.0 um thick Au Peak = 250 ± 5 °C
250
Melting point = 218 °C
Suggested PCB Material and Land Pattern
TEMPERATURE - °C
200
.014 [0.356]
150
100
50
Ramp 1 Preheat Ramp 2 Reflow Cooling
.014 [0.356] .010 [0.254] 0
0 50 100 150 200 250 300
.022 [0.559] .020 [0.508] SECONDS
Figure 15. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste

.005 [0.127] VMMK-1218-BLKG 100 antistatic bag
.008 [0.203] VMMK-1218-TR1G 5000 7” Reel
Notes:
1. 0.010” Rogers RO4350
10
Package Dimension Outline
D
Symbol Min (mm) Max (mm)

E E 0.525 0.575
D 1.004 1.066
A 0.235 0.265
Notes:
All dimensions are in mm
Device Orientation
4 mm
REEL
8 mm
USER
FEED
DIRECTION CARRIER Top View End View
TAPE
11
Tape Dimensions
Bo
Note: 2 Note: 1
P2 Do Po
B 5º <Max>
Note: 2
E
W
F
Bo
A A B
P1 D1
Scale 5:1
Ao B-B Section
RO.1 5º <Max>
Ko
Parameter and
Symbol Test Condition
Ao = 0.73± 0.05 mm
K1 -
Bc = 1.26± 0.05 mm
Scale 5:1 + 0.05 Po 4.0 ± 0.10
A-A Section Ko = 0.35 + 0 mm
P1 4.0 ± 0.10
P2 2.0 ± 0.05
Do 1.55 ± 0.05
Notes:
1. 10 sprocket hole pitch cumulative tolerance is ±0.1 mm D1 0.5± 0.05
2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole
3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier E 1.75 ± 0.10
4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier F 3.50 ± 0.05
5. Carrier camber shall be not than 1mm per 100mm through a length of 250mm
10Po 40.0 ± 0.10
W 8.0 ± 0.20
T 0.20 ± 0.02
Unit: mm
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved.
AV02-1081EN - May 4, 2009
VMMK-1225
0.5 to 26 GHz Low Noise E-PHEMT
in a Wafer Scale Package
Data Sheet
Avago Technologies has combined it’s industry leading x Sub-miniature 0402 (1mm x 0.5mm)
E-pHEMT technology with a revolutionary chip scale Surface Mount Leadless Package
package. The VMMK-1225 can produce an LNA with
high dynamic range, high gain and low noise figure that x Low height (0.25mm)
operates off of a single position DC power supply. The x Frequency Range DC to 26.5 GHz
GaAsCap wafer scale sub-miniature leadless package is x Enhancement Mode[1]
small and ultra thin, yet can be handled and placed with
standard 0402 pick and place assembly. x 0.25 micron gate width
x Tape and Reel packaging option available
The use of 0.25 micron gates allow a ultra low noise figure
(below 1dB from 500 MHz to 12 GHz) with respectable as- Specifications
sociated gain. With a flat transconductance over bias and
frequency the VMMK-1225 provides excellent linearity x 0.87dB Fmin
of over 22 dBm and power over 10 dBm at one dB com- x 11dB Ga
pression. This product is easy to use since it requires only x +23 dBm output 3rd order intercept
positive DC voltages for bias and low matching coeffi-
cients for simple impedance matching to 50 Ω systems. x +8 dBm output power
The VMMK-1225 is intended for any 500MHz to 26.5GHz Applications
application including 802.11abgn WLAN, WiMax, BWA
802.16 & 802.20 and military applications. x 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
GaAsCap 0402, 1.05mm x 0.55mm x 0.25mm applications
x DBS 10 to 13 GHz receivers
x VSAT and SATCOM 13 to 18 GHz systems
YY
t" Gate t"YY Drain x 802.16 & 802.20 BWA systems
x WLL and MMDS Transceivers
x General purpose discrete E-pHEMT for other ultra low
Pin Connections (Top View) noise applications
Notes: Top view package marking provides orientation Notes:
1. The Avago enhancement mode pHEMT devices do not require a
negative gate bias voltage as they are “normally off”. They can help
simplify the design and reduce the cost of receivers and transmitters
in many applications from 500 MHz to 18 GHz

ESD Machine Model = MM20 V (class A)
gate source drain ESD Human Body Model = 100 V (Class O)
Notes:
Electrostatic Discharge, Damage and Control.
“A” = Device Code
“YY” = Year Code
VMMK-1225 Absolute Maximum Ratings
Sym Parameters/Condition Unit Max
Vds Drain-Source Voltage[2] V 5
Vgs Gate-Source Voltage[2] V -5 to 1
Vgd Gate-Drain Voltage[2] V -5 to 1
Ids Drain Current[2] mA 50
Igs Gate Current mA 0.8
Pdn Total Power Dissipation[3] mW 250
Pin RF CW Input Power Max dBm 10
Tch Max channel temperature C +150
θjc Thermal Resistance[4] C/W 200
70 Notes:
0.7 V 1. Operation in excess of any of these conditions may results in
60 permanent damage to this device.
2. Assumes DC quiescent conditions
50 3. Ambient operational temperature TA=25°C unless noted.
0.6 V 4. Thermal resistance measured using 150°C Liquid Crystal Measurement
40 Method
lDS (mA)
30 5. The device can handle + 10dBm RF input power provided lgs is

limited to 1ma
0.5 V
20
10 0.4 V
0 0.3 V
0 1 2 3 4 5 6 7
VDS (V)
Figure 1. Typical I-V Curves. (VGS=0.1 V per step)
VMMK-1225 RF Specifications (on board) [6,7]

TA = 25°C, Freq = 12 GHz, Vds = 2V & Ids = 20mA (unless otherwise specified)
Sym Parameters/Condition Units Min Typ. Max

Vgs Gate Voltage V 0.58 0.68 0.78
Igs Gate Current uA 2.0
Gm Transconductance mS 120
Ga Associated Gain dB 8.7 11 12.2
NF Noise Figure dB 1.0 2.3
Fmin Noise Figure min dB 0.87
P-1dB 1dB Compressed Output Power dBm +8
OIP3 Output 3rd Order Intercept Point dBm +23
Notes:
6. Specifications are derived from measurements in a test circuit.
7. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain.
2
Product Consistency Distribution Charts [1]
Figure 2. Gate Voltage @ Vds = 2V & Ids = 20mA, Figure 3. Gain @ 12 GHz, LSL=8.7, Nominal=10.4, Figure 4. NF @ 12 GHz, Nominal=1.52,
LSL=0.58, Nominal=0.67, USL=0.78, CPK=1.957 USL=12.2, CPK=1.7 USL=2.3,CPK=1.55
Note:
1. Distribution data based at least 500 part sample size from two wafers during initial characterization of this product. Future wafers allocated to this
product may have nominal values anywhere between upper and lower limits.

20.00 30
16.00 26
OIP3 (dBm)
12.00 22
S21 (dB)
8.00 18
1.5V
4.00 14 2V
3V
4V
0.00 10
0 5 10 15 20 25 30 2 6 10 14 18 22
Figure 5. S21 vs. Frequency at 2V, 20mA Figure 6. OIP3 and Ids at 12 GHz
1.40 12
1.20
10
1.00
P1dB (dBm)
Fmin (dB)
0.80 8
0.60
6
0.40 1.5V
2V
0.20 4 3V
4V
0.00
2
0 5 10 15 20
2 6 10 14 18 22
Figure 7. Fmin vs. Frequency at 2V, 20mA Figure 8. P1dB vs. Ids at 12 GHz
3
20 1.2
16
0.9
Fmin (dB)
GAIN (dB)
12
0.6
8
1.5V 0.3
2V 5mA
4 3V 10mA
4V 15mA
0 0
2 6 10 14 18 22 0 4 8 12 16 20
Ids (mA) FREQUENCY GHz
Figure 9. Gain vs. Ids at 12 GHz Figure 10. NFmin vs. Frequency at 2V
13 13
12.5 12
12
11
S21 (dB)
S21 (dB)
11.5
10
11 -40C
-40C
25C 9 25C
10.5
85C
85C
10 8
5 10 15 20 25 5 10 15 20 25
Id (mA) Id (mA)
Figure 11. S21 vs. Ids at 12 GHz over temp at 2V Figure 12. S21 vs. Ids at 12 GHz over temp at 3V
25 30
20 25
20
OIP3 (dBm)
OIP3 (dBm)
15
15
10
10
5 -40C -40C
25C 5 25C
85C 85C
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Id (mA) Id (mA)
Figure 13. OIP3 vs. Ids at 12 GHz over temp at 2V Figure 14. OIP3 vs. Ids at 12 GHz over temp at 3V
4
2 0.95 -42.72 19.01 8.92 148.51 0.03 62.56 0.78 -22.76 33.45
3 0.92 -62.66 18.46 8.38 134.49 0.05 50.55 0.74 -33.18 30.07
4 0.88 -81.48 17.82 7.78 121.19 0.06 39.47 0.69 -42.88 27.08
5 0.85 -98.49 17.11 7.17 109.28 0.07 29.48 0.65 -51.36 24.89
6 0.81 -114.47 16.36 6.58 98.09 0.07 20.68 0.60 -59.27 23.06
7 0.79 -129.09 15.64 6.05 87.68 0.08 12.23 0.56 -66.63 21.51
8 0.77 -142.63 14.91 5.56 77.86 0.08 4.59 0.53 -73.61 20.20
9 0.75 -155.20 14.16 5.11 68.55 0.08 -2.42 0.50 -80.46 19.02
10 0.74 -166.71 13.47 4.71 59.82 0.08 -8.97 0.47 -86.77 18.01
11 0.73 -177.38 12.81 4.37 51.64 0.08 -15.21 0.45 -92.81 17.11
12 0.73 172.73 12.17 4.06 43.68 0.08 -20.51 0.43 -98.99 16.34
13 0.73 163.36 11.58 3.79 36.07 0.08 -25.92 0.42 -104.88 15.64
14 0.72 154.49 11.00 3.55 28.75 0.08 -31.20 0.40 -110.71 15.00
15 0.72 146.17 10.48 3.34 21.67 0.07 -35.48 0.40 -116.24 14.43
16 0.73 137.93 9.99 3.16 14.53 0.07 -39.63 0.39 -121.82 13.96
17 0.73 129.96 9.52 2.99 7.56 0.07 -43.76 0.38 -127.93 13.52
18 0.73 122.52 9.05 2.83 0.89 0.07 -47.66 0.38 -133.93 13.09
19 0.74 114.96 8.61 2.69 -5.89 0.07 -51.22 0.38 -139.67 12.70
20 0.74 107.64 8.19 2.57 -12.53 0.07 -54.78 0.38 -145.51 12.36
21 0.75 100.69 7.77 2.44 -19.05 0.06 -58.37 0.38 -151.20 12.05
22 0.76 93.20 7.38 2.34 -25.66 0.06 -62.24 0.37 -156.42 11.72
23 0.76 86.08 7.01 2.24 -32.37 0.06 -65.41 0.37 -162.46 11.42
24 0.77 79.35 6.66 2.15 -38.72 0.06 -69.57 0.38 -168.85 11.26
25 0.78 72.88 6.31 2.07 -45.30 0.06 -72.63 0.38 -175.43 10.99
26 0.78 66.18 5.94 1.98 -51.81 0.06 -76.40 0.38 178.40 10.70

40.00
GHz dB Mag. Ang. dB 35.00 S21
2 0.15 0.78 16.80 0.19 21.31 30.00
3 0.23 0.707 24 0.19 19.92

25.00
4 0.3 0.637 31.7 0.18 18.63
20.00
5 0.37 0.573 40 0.17 17.45
6 0.44 0.515 48.8 0.16 16.37 15.00
7 0.51 0.462 58.2 0.15 15.41 10.00
8 0.58 0.415 68.1 0.14 14.55
5.00
9 0.66 0.373 78.6 0.13 13.79
0.00
10 0.73 0.338 89.7 0.12 13.15 0 5 10 15 20 25 30
11 0.8 0.308 101.3 0.11 12.61 FREQUENCY (GHz)
12 0.87 0.284 113.5 0.1 12.17
13 0.94 0.265 126.2 0.09 11.85 Figure 15. MSG/MAG and S21 vs Frequency at 2V 20mA
14 1.01 0.252 139.5 0.09 11.63
15 1.09 0.245 153.4 0.08 11.52
16 1.16 0.244 167.8 0.08 11.51
17 1.23 0.248 -177.3 0.08 11.62
Note:
5
VMMK-1225 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=1.5V, Ids=20mA [1]
2 0.95 -41.45 19.16 9.07 149.23 0.04 63.03 0.75 -25.07 35.71
3 0.92 -60.81 18.64 8.55 135.54 0.05 51.14 0.71 -36.68 32.36
4 0.88 -79.22 18.03 7.97 122.51 0.06 40.08 0.66 -47.70 29.32
5 0.85 -95.99 17.35 7.37 110.76 0.07 30.08 0.62 -57.44 27.04
6 0.82 -111.80 16.64 6.80 99.69 0.08 20.91 0.57 -66.62 25.10
7 0.79 -126.35 15.94 6.26 89.35 0.09 12.49 0.53 -75.19 23.45
8 0.77 -139.88 15.23 5.77 79.62 0.09 4.67 0.49 -83.31 22.05
9 0.75 -152.58 14.50 5.31 70.33 0.09 -2.71 0.46 -91.35 20.76
10 0.74 -164.13 13.82 4.91 61.64 0.09 -9.42 0.43 -98.74 19.66
11 0.73 -174.92 13.16 4.55 53.54 0.09 -15.86 0.41 -105.72 18.68
12 0.72 175.03 12.54 4.24 45.64 0.09 -21.52 0.38 -112.70 17.84
13 0.72 165.58 11.95 3.96 38.11 0.09 -27.32 0.37 -119.39 17.08
14 0.72 156.60 11.38 3.71 30.88 0.09 -32.92 0.35 -125.81 16.37
15 0.71 148.19 10.86 3.49 23.83 0.09 -37.75 0.34 -131.85 15.76
16 0.72 139.78 10.37 3.30 16.76 0.09 -42.36 0.33 -138.18 15.26
17 0.72 131.83 9.89 3.12 9.84 0.08 -47.16 0.33 -144.56 14.79
18 0.72 124.31 9.42 2.96 3.32 0.08 -51.18 0.32 -150.78 14.34
19 0.73 116.48 8.97 2.81 -3.41 0.08 -55.89 0.32 -157.20 13.95
20 0.73 109.16 8.55 2.68 -9.91 0.08 -60.43 0.32 -163.11 13.60
21 0.74 102.09 8.15 2.55 -16.35 0.08 -64.86 0.32 -169.12 13.28
22 0.75 94.51 7.76 2.44 -22.84 0.08 -69.11 0.31 -174.70 12.90
23 0.75 87.43 7.38 2.34 -29.48 0.07 -73.28 0.31 178.98 12.59
24 0.76 80.52 7.03 2.25 -35.76 0.07 -77.84 0.31 172.70 12.42
25 0.76 74.22 6.67 2.16 -42.19 0.07 -82.02 0.32 166.48 12.14
26 0.77 67.45 6.31 2.07 -48.60 0.07 -86.38 0.32 159.81 11.88

40.00
35.00 S21
GHz dB Mag. Ang. dB
30.00
2 0.15 0.81 16.80 0.18 21.28

25.00
3 0.21 0.734 24 0.18 19.91
4 0.28 0.665 31.8 0.17 18.65 20.00
5 0.34 0.601 40 0.17 17.49 15.00
6 0.41 0.543 48.8 0.16 16.43 10.00
7 0.47 0.49 58.2 0.15 15.48
5.00
8 0.54 0.442 68 0.14 14.64
9 0.6 0.4 78.4 0.13 13.9 0.00
0 5 10 15 20 25 30
10 0.67 0.363 89.3 0.12 13.27
FREQUENCY (GHz)
11 0.73 0.332 100.7 0.11 12.74
12 0.8 0.307 112.6 0.1 12.32 Figure 16. MSG/MAG and S21 vs Frequency at 1.5V 20mA
13 0.86 0.286 125.1 0.09 12
14 0.93 0.272 138.1 0.08 11.79
15 0.99 0.262 151.6 0.08 11.68
16 1.06 0.259 165.6 0.08 11.68
17 1.12 0.26 -179.8 0.08 11.79
Note:
6
2 0.95 -44.16 18.65 8.56 147.52 0.03 62.38 0.80 -20.48 33.25
3 0.92 -64.98 18.10 8.03 132.99 0.04 49.96 0.76 -29.83 29.80
4 0.87 -84.86 17.43 7.44 119.11 0.05 38.25 0.71 -38.52 26.77
5 0.84 -103.02 16.69 6.83 106.61 0.06 28.18 0.67 -46.15 24.51
6 0.81 -119.88 15.89 6.23 94.91 0.06 19.19 0.63 -53.21 22.66
7 0.78 -135.19 15.11 5.69 84.12 0.07 10.75 0.59 -59.80 21.11
8 0.76 -149.25 14.32 5.20 74.00 0.07 3.23 0.56 -66.03 19.78
9 0.75 -161.91 13.51 4.74 64.50 0.07 -3.86 0.53 -72.27 18.59
10 0.74 -173.16 12.77 4.35 55.73 0.07 -9.95 0.52 -78.27 17.60
11 0.74 176.55 12.05 4.01 47.51 0.07 -15.58 0.50 -84.02 16.71
12 0.74 167.27 11.39 3.71 39.54 0.06 -20.57 0.49 -90.13 15.98
13 0.74 158.74 10.77 3.46 32.00 0.06 -25.46 0.48 -96.11 15.29
14 0.74 150.81 10.19 3.23 24.84 0.06 -29.82 0.47 -101.79 14.67
15 0.73 143.18 9.66 3.04 17.76 0.06 -33.52 0.47 -107.60 14.12
16 0.74 135.70 9.16 2.87 10.68 0.06 -36.60 0.47 -113.31 13.64
17 0.74 128.49 8.71 2.73 3.81 0.06 -39.53 0.47 -118.80 13.23
18 0.74 121.25 8.27 2.59 -2.90 0.05 -42.17 0.47 -124.55 12.80
19 0.74 113.89 7.85 2.47 -9.79 0.05 -44.68 0.48 -130.27 12.44
20 0.75 106.67 7.46 2.36 -16.52 0.05 -47.26 0.48 -136.04 12.11
21 0.75 99.29 7.07 2.26 -23.30 0.05 -50.61 0.48 -141.26 11.78
22 0.75 91.51 6.72 2.17 -30.13 0.05 -52.95 0.49 -146.30 11.46
23 0.75 83.74 6.37 2.08 -37.20 0.05 -55.09 0.49 -151.70 11.13
24 0.76 75.90 6.04 2.00 -43.95 0.05 -58.00 0.49 -157.00 10.91
25 0.76 68.74 5.69 1.93 -50.88 0.05 -60.53 0.49 -163.41 10.67
26 0.77 61.14 5.33 1.85 -57.76 0.05 -63.55 0.49 -168.90 10.37

35.00
30.00 MSG/MAG
2 0.14 0.783 16.4 0.19 20.73 25.00

3 0.21 0.704 23.4 0.18 19.33
20.00
4 0.29 0.632 30.9 0.18 18.03
5 0.37 0.565 39.1 0.17 16.85 15.00
6 0.45 0.505 48 0.16 15.77 10.00
7 0.53 0.45 57.4 0.15 14.81
8 0.61 0.402 67.6 0.14 13.95 5.00
9 0.68 0.359 78.3 0.13 13.21 0.00
10 0.76 0.322 89.7 0.12 12.57 0 5 10 15 20 25 30
11 0.84 0.291 101.7 0.11 12.04 FREQUENCY (GHz)
12 0.92 0.266 114.3 0.11 11.62
13 1 0.247 127.6 0.1 11.31 Figure 17. MSG/MAG and S21 vs Frequency at 3V 20mA
14 1.08 0.234 141.5 0.09 11.12
15 1.15 0.227 156 0.09 11.03
16 1.23 0.226 171.2 0.09 11.05
17 1.31 0.231 -173 0.09 11.18
Note:
7
2 0.95 -45.53 18.45 8.37 146.63 0.03 61.48 0.81 -19.63 33.11
3 0.91 -66.85 17.86 7.82 131.81 0.04 49.37 0.77 -28.48 29.56
4 0.87 -87.06 17.16 7.21 117.72 0.05 37.71 0.73 -36.59 26.53
5 0.83 -105.43 16.37 6.59 105.08 0.05 27.63 0.69 -43.74 24.25
6 0.80 -122.38 15.55 5.99 93.35 0.06 18.64 0.65 -50.37 22.41
7 0.78 -137.72 14.73 5.45 82.50 0.06 10.37 0.62 -56.59 20.86
8 0.76 -151.66 13.93 4.97 72.41 0.06 3.27 0.59 -62.52 19.54
9 0.75 -164.20 13.11 4.52 62.92 0.06 -3.88 0.56 -68.53 18.35
10 0.74 -175.38 12.36 4.15 54.12 0.06 -9.86 0.55 -74.35 17.39
11 0.74 174.53 11.64 3.82 45.87 0.06 -14.98 0.53 -80.07 16.51
12 0.74 165.32 10.97 3.54 37.88 0.06 -19.88 0.52 -86.09 15.78
13 0.74 156.90 10.34 3.29 30.28 0.06 -23.98 0.52 -92.05 15.09
14 0.74 149.09 9.76 3.08 23.07 0.06 -28.30 0.51 -97.69 14.48
15 0.74 141.52 9.23 2.89 15.94 0.05 -31.31 0.51 -103.56 13.94
16 0.74 134.12 8.72 2.73 8.83 0.05 -34.13 0.51 -109.35 13.46
17 0.74 126.90 8.27 2.59 1.87 0.05 -35.42 0.51 -114.79 13.05
18 0.74 119.69 7.82 2.46 -4.91 0.05 -38.50 0.51 -120.61 12.65
19 0.74 112.42 7.40 2.34 -11.91 0.05 -40.30 0.52 -126.46 12.27
20 0.75 105.25 7.00 2.24 -18.68 0.05 -42.50 0.52 -132.13 11.94
21 0.75 97.82 6.61 2.14 -25.52 0.05 -43.80 0.53 -137.49 11.61
22 0.75 90.09 6.24 2.05 -32.42 0.05 -46.17 0.53 -142.61 11.28
23 0.75 82.38 5.88 1.97 -39.51 0.05 -48.45 0.53 -148.08 10.95
24 0.76 74.56 5.55 1.89 -46.30 0.05 -50.37 0.53 -153.35 10.73
25 0.77 67.45 5.20 1.82 -53.32 0.04 -52.43 0.53 -159.71 10.48
26 0.77 59.93 4.83 1.74 -60.23 0.05 -55.25 0.53 -165.19 10.18

35.00
30.00 MSG/MAG
2 0.14 0.78 16.40 0.20 20.28 25.00

3 0.22 0.697 23.2 0.19 18.95
20.00
4 0.3 0.625 30.7 0.19 17.71
5 0.37 0.558 38.9 0.18 16.58 15.00
6 0.45 0.498 47.7 0.17 15.55 10.00
7 0.53 0.443 57.3 0.16 14.63
8 0.6 0.395 67.5 0.15 13.81 5.00
9 0.68 0.352 78.4 0.14 13.09 0.00
10 0.75 0.316 89.9 0.13 12.47 0 5 10 15 20 25 30
11 0.83 0.286 102.1 0.12 11.96 FREQUENCY (GHz)
12 0.91 0.261 115 0.11 11.55
Figure 18. MSG/MAG and S21 vs Frequency at 4V 20mA
13 0.98 0.243 128.6 0.1 11.24
14 1.06 0.231 142.9 0.1 11.03
15 1.14 0.224 157.8 0.09 10.93
16 1.21 0.224 173.4 0.09 10.94
17 1.29 0.23 -170.3 0.09 11.04
Note:
8
Small Signal Model Parameters
Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5
Gm 0.07549 Gm 0.10852 Gm 0.1276 Gm 0.128
Tau 0.001914 Tau 0.00212 tau 0.002061 tau 0.001952
Cgs 0.3008 Cgs 0.3596 Cgs 0.393 Cgs 0.3943
Rgs 0 Rgs 0.05267 Rgs 1.682 Rgs 1.989
Cgd 0.04174 Cgd 0.0376 Cgd 0.0337 Cgd 0.03377
Cds 0.1093 Cds 0.10984 Cds 0.109 Cds 0.1082
Rds 540.40 Rds 374.20 Rds 348.00 Rds 341.90

Vd (V) 2 Vd (V) 2 Vd (V) 2 Vd (V) 2
Gm 0.07357 Gm 0.1063 Gm 0.1243 Gm 0.1357
Tau 0.00206 Tau 0.00206 tau 0.002 tau 0.002034
Cgs 0.3266 Cgs 0.3973 Cgs 0.4458 Cgs 0.4758
Rgs 0.4454 Rgs 1.598 Rgs 1.9394 Rgs 2.282
Cgd 0.03642 Cgd 0.0323 Cgd 0.0289 Cgd 0.0256
Cds 0.1081 Cds 0.1075 Cds 0.1075 Cds 0.1072
Rds 631.10 Rds 444.90 Rds 408.90 Rds 418.70

Vd (V) 3 Vd (V) 3 Vd (V) 3 Vd (V) 3
Gm 0.0718 Gm 0.1023 Gm 0.1196 Gm 0.1305
tau 0.002319 tau 0.00224 tau 0.00226 tau 0.002248
Cgs 0.3761 Cgs 0.4662 Cgs 0.5227 Cgs 0.555
Rgs 1.106 Rgs 1.801 Rgs 2.023 Rgs 2.15
Cgd 0.0293 Cgd 0.02623 Cgd 0.02397 Cgd 0.022
Cds 0.1071 Cds 0.1065 Cds 0.1067 Cds 0.1064
Rds 785.70 Rds 556.80 Rds 494.10 Rds 479.90

Vd (V) 3 Vd (V) 3 Vd (V) 3 Vd (V) 3
Gm 0.06983 Gm 0.1005 Gm 0.5649 Gm 0.1269
tau 0.002544 tau 0.002389 tau 0.002383 tau 0.002368
Cgs 0.4077 Cgs 0.51068 Cgs 0.5649 Cgs 0.595
Rgs 1.341 Rgs 1.879 Rgs 1.912 Rgs 1.883
Cgd 0.02604 Cgd 0.02355 Cgd 0.02197 Cgd 0.0208
Cds 0.1062 Cds 0.10589 Cds 0.1057 Cds 0.1058
Rds 887.00 Rds 627.00 Rds 552.20 Rds 517.10
9
VMMK-1225 ADS Model
CAP
ID=C6
C=Cpgd pF
CAP
ID=C4
C=Cgd pF
PORT IND RES RES IND PORT
P=1 ID=L1 ID=R3 ID=R2 ID=L2 P=2
Z=50 Ohm L=Lg nH R=Rg Ohm R=Rd Ohm L=Ld nH Z=50 Ohm
1 3
2 4
CAP CAP
ID=C1 VCCS ID=C2
C=Cgs pF ID=U1 C=Cds pF
M=Gm S
A=0 Deg
CAP
RES R1=1e100 Ohm
ID=C5
CAP ID=R1 R2=Rds Ohm
C=Cpds pF
ID=C3 R=Rgs Ohm F=0 GHz
C=Cpgs pF T=tau ns
RES
ID=R4
R=Rs Ohm
IND
ID=L3
L=Ls nH
PORT
P=3
Rg Value Z=50 Ohm
Rg 4.532
Rd 1.9
RsG 1.72
C pgs 0.0475
C pds 0.0392
C pgd 0.003935
Ls 0.000303
Lg 0.3492
Ld 0.2772
10
Outline Drawing Recommended SMT Attachment
Top and Side View The VMMK Packaged Devices are compatible with high
volume surface mount PCB assembly processes.
Manual Assembly for Prototypes

0.5mm
xAYY 1. Follow ESD precautions while handling packages.
2. Handling should be along the edges with tweezers or
from topside if using a vacuum collet.
0.25mm
3. Recommended attachment is solder paste. Please
1.05mm
see Figure 14 for recommended solder reflow profile.
Conductive epoxy is not recommended. Hand
Bottom View soldering is not recommended.
4. Apply solder paste using either a stencil printer or
0.8mm dot placement. The volume of solder paste will be
dependent on PCB and component layout and should
0.7mm be controlled to ensure consistent mechanical and
electrical performance. Excessive solder will degrade
0.3mm RF performance.
0.2mm 5. Follow solder paste and vendor’s recommendations
when developing a solder reflow profile. A standard
profile will have a steady ramp up from room
temperature to the pre-heat temp to avoid damage
due to thermal shock.
6. Packages have been qualified to withstand a peak
0.5mm
temperature of 260ºC for 20 to 40 sec. Verify that the

profile will not expose device beyond these limits.
7. Clean off flux per vendor’s recommendations.
8. Clean the module with Acetone. Rinse with alcohol.
Allow the module to dry before testing.
Notes:
1. x indicates pin 1 300
2. Dimensions are in millimeters
3. Pad Material is minimum 5.0 um thick Au
Peak = 250 ± 5 °C
250
Melting point = 218 °C
TEMPERATURE - °C
Suggested PCB Material and Land Pattern 200
.014 [0.356] 150
100
50
Ramp 1 Preheat Ramp 2 Reflow Cooling
0
.014 [0.356] .010 [0.254] 0 50 100 150 200 250 300
SECONDS
.022 [0.559] .020 [0.508]
Figure 19. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste

.005 [0.127] Part Number No. of Devices Container
.008 [0.203] VMMK-1225-BLKG 100 antistatic bag
Notes:
1. 0.010” Rogers RO4350
VMMK-1225-TR1G 5000 7” Reel
11
Package Dimension Outline
D
Symbol Min (mm) Max (mm)

E 0.525 0.575
E
D 1.004 1.066
A 0.235 0.265
Notes:
All dimensions are in mm
Device Orientation
REEL 4 mm
8 mm
USER
FEED
DIRECTION CARRIER
TAPE Top View Top View
12
Bo
Note: 2 Note: 1
P2 Do Po
B 5º <Max>
Note: 2
E
W
F
Bo
A A B
P1 D1
Scale 5:1
Ao B-B Section
RO.1 5º <Max>
Ko
Ao = 0.73± 0.05 mm
Parameter and
Symbol Test Condition
Bc = 1.26± 0.05 mm
Scale 5:1 + 0.05 K1 -
A-A Section Ko = 0.35 + 0 mm
Po 4.0± 0.10
P1 4.0± 0.10
Notice:
1. 10 sprocket hole pitch cumulative tolerance is ±0.1 mm P2 2.0± 0.05
2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole
Do 1.55± 0.05
3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier
4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier D1 0.5± 0.05
5. Carrier camber shall be not than 1mm per 100mm through a length of 250mm
E 1.75± 0.10
F 3.50± 0.05
Po 40.0± 0.10
W 8.0± 0.20
T 0.20± 0.02
Unit: mm
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2010 Avago Technologies Limited. All rights reserved.
AV02-1082EN - March 4, 2010

AVAGO Transistor Selection Guide

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AVAGO Transistor Selection Guide

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Transistors

Silicon Bipolar Transistors

Medium Power Transistors (Typical Specifications @ 25°C Case Temperature)

Low Noise pHEMTs (Typical Specifications @ 25°C Case Temperature)

Product Consistency Distribution Charts [8, 9]

Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA. Figure 4. Gain @ 2 GHz, 4 V, 80 mA.

Input 50 Ohm Input 50 Ohm Output

OIP3, IIP3 (dBm)

P1dB, OIP3 (dBm)

OIP3, P1dB (dBm), GAIN (dB)

NOISE FIGURE (dB)

5 0.5 5 P1dB Gain

Figure 20. Swept Power Tuned for Max P1dB

ATF-33143 Typical Noise Parameters

0.5 0.26 0.45 26.00 0.07 24.74 MSG

0.9 0.30 0.38 42.20 0.07 21.02 20

1.8 0.34 0.26 93.60 0.04 16.50

ATF-33143 Typical Noise Parameters

GHz dB Mag. Ang. - dB MSG

ATF-33143 Typical Noise Parameters

GHz dB Mag. Ang. - dB MSG

0.5 0.23 0.43 29.20 0.06 25.64 20

0.9 0.28 0.35 42.40 0.06 21.62

1.5 0.34 0.26 68.80 0.06 17.84

ATF-33143 Typical Noise Parameters

GHz dB Mag. Ang. - dB MSG

0.5 0.30 0.44 31.50 0.08 25.59 20

0.9 0.33 0.36 42.70 0.07 21.43

1.5 0.38 0.26 68.70 0.06 17.72

ATF-33143 Typical Noise Parameters

GHz dB Mag. Ang. - dB MSG

ATF-33143 Typical Noise Parameters

GHz dB Mag. Ang. - dB MSG

0.5 0.30 0.42 34.50 0.08 26.23 20

This model can be used as a design tool. It has been tested

Var VAR VIA2

Port L L TLINP TLINP

1.15 (.045) BSC

SYMBOL MIN. MAX.

TOP VIEW END VIEW

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

CARRIER TAPE WIDTH W 8.00 + 0.30 - 0.10 0.315 + 0.012

ASSOCIATED GAIN (dB)

4 SOURCE Figure 1. ATF-36077 Optimum Noise Figure and Associated

1 3 This GaAs PHEMT device has a nominal 0.2 micron gate

Note: 1. See Noise Parameter Table.

ATF-36077 Electrical Specifications,

ATF-36077 Characterization Information,

ATF-36077 Typical “Off ” Scattering Parameters,

6 0.30 0.73 76 0.13 10

8 0.37 0.66 102 0.09

77 Package Dimensions Part Number Ordering Information

TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).

SOT-363 (SC-70) SOURCE SOURCE

Note: Top View. Package marking provides orientation and

ATF-36163 Pkg Attention: Observe precautions for

Freq. Fmin Ga Γopt Rn/ZO 0.8 8

5 0.61 14.14 0.60 71 0.20 FREQUENCY (GHz)

13 1.14 8.45 0.26 -46 0.21 12

Figure 2. Maximum Available Gain, Maximum Stable Gain &

Freq. Fmin Ga Γopt Rn/ZO 0.8 8

13 1.17 8.68 0.26 -40 0.22 12

Figure 4. Maximum Available Gain, Maximum Stable Gain &

ATF-36163 Typical Noise Parameters 1.6 16