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UNIT I
Power Semiconductor
Devices
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Introduction
• What are Power Semiconductor Devices (PSD)?
They are devices used as switches or rectifiers in
power electronic circuits
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Classification
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Important Parameters
• Breakdown voltage.
• On-resistance.
Trade-off between breakdown voltage and
on-resistance.
• Rise and fall times for switching between on
and off states.
• Safe-operating area.
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Thyristor: Structure
• Thyristor is a general class of a four-layer pnpn
semiconducting device.
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Three States:
Reverse Blocking
Forward Blocking
Forward Conducting
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Applications
Power semiconductor devices have widespread
applications:
Automotive
Alternator, Regulator, Ignition, stereo tape
Entertainment
Power supplies, stereo, radio and television
Appliance
Drill motors, Blenders, Mixers, Air conditioners
and Heaters
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Thyristors
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SCR
Symbol of
Silicon Controlled
Rectifier
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Structure
Gate Cathode
J3
n
+ 19
10
-3
cm n
+ 19
10 cm
-3
} 10µm
J2
-
p 10
17
cm
-3
} 30-100µm
J1
n
–
10
13
-5 x 10
14
cm
-3
} 50-1000µm
p
+
10
17
cm
-3
} 30-50µm
19 -3
p 10 cm
Anode
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Device Operation
Simplified model of a
thyristor
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V-I
Characteristics
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Case 1: When I g = 0
I CBO1 + I CBO2
IA =
1 − (α1 + α 2 )
Case 2: When I G ≠ 0
α 2 I g + I CBO1 + I CBO 2
IA =
1 − (α1 + α 2 )
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Turn-on
Characteristics
ton = td + tr
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VAK
tC
tq
IA
di
Commutation
Anode current dt
begins to
decrease Recovery Recombination
t1 t2 t3 t4 t5
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Thyristor Types
• Phase-control Thyristors (SCR’s).
• Fast-switching Thyristors (SCR’s).
• Gate-turn-off Thyristors (GTOs).
• Bidirectional triode Thyristors (TRIACs).
• Reverse-conducting Thyristors (RCTs).
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Fast Switching
Thyristors
• Also called inverter thyristors.
• Used for high speed switching applications.
• Turn-off time tq in the range of 5 to 50µsec.
• On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
• High dv/dt and high di/dt rating.
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Bidirectional Triode
Thyristors (TRIAC)
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Mode-I
Operation
MT (+) 2
P1
N1
P2
Ig
N2
MT2 Positive,
MT1 (−)
G Gate Positive
V
(+)
Ig
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Mode-II
Operation
MT (+) 2
P1
Initial Final
N1
conduction conduction
P2
N3 N2
MT2 Positive,
G
MT1 (−) Gate Negative
V
Ig
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Mode-III Operation
MT2 (−)
N4
P1
N1
P2
N2
MT2 Negative,
G MT1 (+)
(+) Gate Positive
Ig
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Mode-IV Operation
MT2 (−)
N4
P1
N1
P2 MT2 Negative,
N3
G MT1 (+)
Gate Negative
(-)
Ig
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Triac Characteristics
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BJT structure
heavily doped ~ 10^15 lightly doped ~ 10^8 lightly doped ~ 10^6
provides the carriers
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BJT characteristics
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BJT characteristics
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Forward-active (or simply, active): The emitter-base junction is forward biased and the
base-collector junction is reverse biased. Most bipolar transistors are designed to afford the
greatest common-emitter current gain, βf in forward-active mode. If this is the case, the
collector-emitter current is approximately proportional to the base current, but many times
larger, for small base current variations.
Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates
current conduction from the emitter to the collector. This mode corresponds to a logical
"on", or a closed switch.
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MOSFET
• NMOS: N-channel Metal
Oxide Semiconductor
• L = channel length
W
GATE • W = channel width
“Metal” (heavily
doped poly-Si) DRAIN
SOURCE
• A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
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N-channel MOSFET
Gate
IG Drain
Source
IS gate ID
oxide insulator
n n
p
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n+ poly-Si p+ poly-Si
n+ n+ p+ p+
p-type Si n-type Si
• For current to flow, VGS > VT • For current to flow, VGS < VT
• Enhancement mode: VT > 0 • Enhancement mode: VT < 0
• Depletion mode: VT < 0 • Depletion mode: VT > 0
– Transistor is ON when VG=0V – Transistor is ON when VG=0V
(“n+” denotes very heavily doped n-type material; “p+” denotes very heavily doped p-type material)
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NMOS G G
n+ poly-Si
n+ n+ S S
p-type Si
PMOS G G
Body
p+ poly-Si
p+ p+ S S
n-type Si
Body
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MOSFET Terminals
• The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
– For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
– For a p-channel MOSFET, the SOURCE is biased at a higher
potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
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IG
G
S D
VDS
oxide
VGS +
− semiconductor +
−
IG
The gate is insulated from the
semiconductor, so there is no
significant steady gate current.
always zero!
VGS
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G ID
S D
VDS
oxide
VGS +
− semiconductor +
−
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NMOSFET Example:
ID
VGS = 2 V
VGS = 1 V > VT
VDS
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W V DS
ID = k n′ V GS − V T − 2 V DS
L
where k n′ = µ n C ox
process transconductance parameter
2) Saturation Region:
VDS > VGS − VT
k n′ W
I DSAT = (VGS − VT )2
2 L
where k n′ = µ n C ox “CUTOFF” region: VG < VT
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Base Emitter
Collector
N+
Base
N+
N-
Emitter
Collector
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N-MOSFET
D
G
S
NPN B
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Device Operation
• Operation Of IGBT Can Be Considered Like A PNP
Transistor With Base Drive Current Supplied By The
MOSFET
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• Interface between control (low power electronics) and (high power) switch.
• Functions:
– amplifies control signal to a level required to drive power switch
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