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Acknowledgement
This study is carried out as a part of “R&D promotion
scheme funding international joint research” promoted by
NICT (National Institute of Information and Communications
Technology).
The authors would like to thank Mr. Eric Leclerc and his
team (United Monolithic Semiconductor SAS), Mr. Hideaki
Amano (US-Services LTD.) and Dr. Keren Lee (NICT) for
Fig.7 Measured S-parameter their supports.
REFERENCES
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Fig.8 Input-output characteristics [6] S. Shin, M. Tsai, R. Liu, K. Lin, and H. Wang, “A 24-GHz
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[9] O. Dupuis, X. Sun, G. Carchon, P. Soussan, M. Ferndahl, S.
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[10] M. H. Tsai, Shawn S. H. Hsu, Fu-Lung Hsueh, Chewn-Pu
Fig.9 Comparison with published works Jou, Tzu-Jin Yeh, Jun-De, and Hsieh-Hung Hsieh, “A
24-GHz Low-Noise Amplifier Co-Designed With ESD
Protection Using Junction Varactors in 65-nm RF CMOS”
amplifier MMIC achieve the same or better characteristics
in IEEE Int. Microwave Symposium Dig., TU4C-2, June
compared with the published works.
2011
[11] K. Yu and M. F. Chang, “CMOS K-band LNAs Design
Counting Both Interconnect Transmission line and RF Pad
IV. CONCLUSION
Parasitics,” in IEEE Radio Frequency Integrated Circuits
This paper proposes a wireless sensor network for health Symposium, pp.101-104, June 2004
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