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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQP5N50C/FQPF5N50C
QFET TM

FQP5N50C/FQPF5N50C
500V N-Channel MOSFET

General Description Features


These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology. • Low Crss ( typical 15pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D
!

◀ ▲
G! ●

TO-220 GD S
TO-220F
G DS
FQP Series FQPF Series !
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP5N50C FQPF5N50C Units


VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 5 5* A
- Continuous (TC = 100°C) 2.9 2.9 * A
IDM Drain Current - Pulsed (Note 1) 20 20 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ
IAR Avalanche Current (Note 1) 5 A
EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 73 38 W
- Derate above 25°C 0.58 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FQP5N50C FQPF5N50C Units
RθJC Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 500 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 2.5A -- 1.14 1.4 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 2.5A (Note 4) -- 5.2 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 480 625 pF
Coss Output Capacitance f = 1.0 MHz -- 80 105 pF
Crss Reverse Transfer Capacitance -- 15 20 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 12 35 ns
VDD = 250 V, ID = 5A,
tr Turn-On Rise Time -- 46 100 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 50 110 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 48 105 ns
Qg Total Gate Charge VDS = 400 V, ID = 5A, -- 18 24 nC
Qgs Gate-Source Charge VGS = 10 V -- 2.2 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 9.7 -- nC

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 5 A, -- 263 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 1.9 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
1 8.0 V
10 7.0 V
6.5 V 1
6.0 V 10
5.5 V
Bottom : 5.0 V

ID, Drain Current [A]


ID, Drain Current [A]

o
150 C

0 o
10 25 C
0 o
10 -55 C

※ Notes : ※ Notes :
-1
10 1. 250μ s Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250μ s Pulse Test
-1
10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

4.5

4.0 10
1

3.5
Drain-Source On-Resistance

VGS = 10V
IDR, Reverse Drain Current [A]

3.0
RDS(ON) [Ω ],

2.5
0
10
2.0
VGS = 20V
1.5 150℃
※ Notes :
25℃
1.0 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

-1
0.5 10
0 5 10 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation with Source Current
and Temperature

1200 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000 10 VDS = 100V
VGS, Gate-Source Voltage [V]

VDS = 250V
800 Ciss 8
Capacitance [pF]

VDS = 400V
Coss
600 6

400 4
※ Notes ;
Crss 1. VGS = 0 V
2. f = 1 MHz
200 2
※ Note : ID = 5A

0 0
-1 0 1 0 5 10 15 20
10 10 10
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 2.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
o TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs Temperature vs Temperature

2 2 Operation in This Area


10 Operation in This Area 10 is Limited by R DS(on)
is Limited by R DS(on)

10 µs
10 µs
10
1 100 µs 1 100 µs
10
1 ms
ID, Drain Current [A]

ID, Drain Current [A]

1 ms
10 ms
100 ms 10 ms
100 ms
0 DC 0
10 10 DC

-1 -1
10 ※ Notes : 10 ※ Notes :
o
o
1. TC = 25 C 1. TC = 25 C
o
2. TJ = 150 C
o 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP5N50C for FQPF5N50C

4
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [℃]

Figure 10. Maximum Drain Current


vs Case Temperature

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Typical Characteristics (Continued)

(t), T h e rm a l R e s p o n s e
0
10 D = 0 .5

0 .2

0 .1
※ N o te s :
-1 0 .0 5 1 . Z θ J C (t) = 1 .7 1 ℃ /W M a x .
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2 3 . T J M - T C = P D M * Z θ J C (t)

0 .0 1
θ JC

s in g le p u ls e PDM
Z

t1
t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve for FQP5N50C


(t), T h e rm a l R e s p o n s e

D = 0 .5
0
10
0 .2

0 .1

0 .0 5 ※ N o te s :
1 . Z θ J C (t) = 3 .3 1 ℃ /W M a x .
-1
2 . D u ty F a c to r, D = t 1 /t 2
10 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
θ JC

0 .0 1
PDM
Z

s in g le p u ls e
t1
-2
t2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF5N50C

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)


tp
tp Time

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG


• ISD controlled by pulse period

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Mechanical Dimensions

TO - 220

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


FQP5N50C/FQPF5N50C
Package Dimensions (Continued)

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20


(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3

)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™
ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic®
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2003 Fairchild Semiconductor Corporation Rev. I2


ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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