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DEVICES,
VOL. ED-29, NO. 2 , FEBRUARY 1982
Abstract-An analytical expression has been derived for the electron effect of electron-electron scattering in the case of electron
and hole mobility in siliconbased on bothexperimentaldata and mobility and hole-hole scattering in the case of hole mobility
modified Brooks-Herring theory of mobility. The resulting expression
was incorporated empirically for dopant densities greater than
allows one to obtain electron and hole mobility as a function of con-
centrationup to -lozo in an extended and continuoustempera- 2 X 10l6 cm-3 following theapproach of Li andThurber
ture range (250-500 K) within *13 percent of the reported experimen- [9], [ 101. For higher concentrations, experimental values of
tal values. mobility were takenfromtheliterature. These mobility
values, both calculated andexperimental(henceforth called
INTRODUCTION experimental for the sake of distinguishing them from those
calculated from the empirical relation to be derived) were then
T HE ELECTRON and hole mobilities in silicon as a func-
tion of dopant
importantparametersfor
concentration
and
temperature
device design and analysis. These
are fitted into thefollowing expression for the mobility:
written as # I 200
# 2 300
7.3 X 1017T312 2 800
# 3 400
500
"= NIG(b)
where NI is the number of ionized impurity atoms andG(b) is
a function given by
b
G(b)= In (b t 1) - -
b t l
where
n'
and n' = n [ 2 - (n/N)] which assumes the acceptor concentra-
tion to be zero, n being electron density per cubic centimeter.
After taking into account electron-electron scattering effects
on p~ and p~ as is done by Li and Thurber [9], the two mobili-
ties are combined according to themixedscatteringfor-
2oo
I O 0 1016
Fig. 1. Theelectron
1017 10'6
where x2 = 6pL/pI, and Ci (x), Si (x) are cosine and sine inte- TABLE I
BESTFITTING PARAMETERS OBTAINED FROM THE MOBILITY DATA
grals of x, respectively. Normally pL and P I are combined (SEE TEXT)
using Mathiessens' rule for the sake of simplicity, but this is
known to give incorrect results [8], [ 161. Thuselectron
mobility can be calculated at any temperature using (3)-(7),
for concentration up to 5 X 10" ~ m - For ~ . higher concentra-
tions, experimental value of mobilities have been taken from Electrons
theliterature. However, at these concentrations (degenerate 200
3103.6 109.7 0.503 0.947
condition) the mobility depends upon the nature of the dopant 300 88.3 1241.8 1.295 0.891
[6], [8]. For phosphorus dopant, the mobility value is 10-15
400 73.76 644.3 2.46 0.823
percent higher than the corresponding value for arsenic dopant
500 66.2 364.0 4.29 0.031
[6], [8]. In what follows, we have taken experimental values
of themobilityforphosphorusdopant. Although there is a Holes
large spread (20-25 percent) in the mobility values reported in
300 54.3 106.9 2.35 0.88
the literature, [ 51-[ 81, [ 121, [ 171 there is consistency in the
observation-the mobility becomes almost constant indepen-
dent of concentrationforconcentration greater thanabout is thenfittedinto (1) using theoptimizationtechnique as
2 X 10'' cmA3 and decreases slowly with increasing tempera- discussed earlier. The values of the four parameters thus ob-
ture.Inourcalculations, we have takenmobility value for tained are shown in Table I. As can be seen from this table all
concentrations greater than 2 X~-I O.l S cm-3 from
~~ ~
- .
experimental four parameters vary with temperature. It is to be noted that
data of Mousty e t al. [5] and Finetti e t aZ. [ 121.for room the values of the four constants at 300 K are very close to
temperature and below as their data seem to be fairly accurate those obtained by Baccarani et al. [7] based on measurements
being within 2 percentoftheexperimentalerror.Fortem- of electron mobility in phosphorus-doped silicon. Taking into
peratures above 300 K, themobility is calculated fromthe account these temperature variations oftheparameters, we
resistivity data of Chapman et aZ. [6],for heavily doped arrive atthe followingempiricalrelation fortheelectron
phosphorus,and used inthepresentcalculations, taking mobility as a hnction of temperature and concentration:
Mousty e t al. [SI mobility value at room temperature as the
base value. These mobility values for four values of tempera- 7.4 X lo8 T-2.33
pe = 88 Ti0.57t
ture 200, 300, 400, and. 500 K are shown as a continuous line 1 t [N/(1.26 X 1017 T,2.4)]0.88
in Fig. 1. Near an electron concentration of 5 X 10l8 ~ m - ~ ,
the data are smoothed out to match between the theoretical (8)
andexperimental values-the maximum difference observed where T, = T/300. The values of electron mobility calculated
was about 7 percent at 5 X 10" ~ m - ~Each . mobility curve from (8) are shown in Fig. 1 as dotted lines for the four tem-
IEEE TRANSACTIONS ON ELECTRONDEVICES,VOL. ED-29, NO. 2 , FEBRUARY 1982
Fig. 2. Resistivity as a functionof temperature for different phosphorus- 5.6 X lOI7 T3I2
(continuous line)andboron- (dotted line) doped silicon slices of
different concentrations. The points are experimental data (0-Li and "= NIG(b)
Thurber, A-Finetti et d.,and O-Chapman e t d.).
where G(b) is given by (5)
2.5 x 1015 T Z
TABLE I1
b=
ROOTMEANSQUARE DEVIATIONS
AND MAXIMUM DEVIATIONS
BETWEEN
P'
THE EXPERIMENTAL
MOBILITY
AND THAT OBTAINEDFROM (8) and
(ELECTRON
MOBILITY)
OR (13) (HOLEMOBILITY)
T('.K) Root
Maximum
mean
square deviations Deviation
Root
Haximum
mean
square deviation deviation
p ' = p (2- ):
(percent) (percent) (percent) (percent)
p is the hole density ( ~ m - ~and) the donor density is assumed
Electrons Roles to be zero.
Again taking into account hole-hole scattering effects on p L
12.17 250 7.03
and as done by Li [ l o ] and combining thetwo mobilities
300 4.06 8.62 4.43 8.9
according to (7), hole mobilities are obtained for concentra-
LOO 4.67 9.6 5.4 13.2 tions up to 2 X 10l8 ~ m - ~For. higher concentrations, experi-
6.13 500 mental values of holemobility have been taken.Thehole
mQbilities thus obtained at room temperature are fitted into
(l), again resulting in four parameters whose values are given
peratures. As can be seen, the dashed curves are quite close to in Table I. These parameters for hole mobility could not be
the continuous line. In fact, as reported in Table 11, the root calculated at higher temperature because of the lack of hole
mean squaredeviation S (2) is less than 7 percent while the mobilitydata available athigh temperaturesandconcentra-
maximum deviation is less than 12 percent in the temperature tions. However, since the three parameters pmin,Nref,and a
range 250-500 K. Although for the sake of clarity Fig. 1 is of (1) are mainly governed by pI and since factors affecting the
drawnforconcentrations greater than10l6 (8) is valid temperature dependence of pI are the same for electrons and
concentrations
for in the range ~ m - ~ . holes (see (4) and(1 l)), these temperature variations have
To further check the validity of (8), the resistivity of n-type been taken here to be the same for electrons and holes. Thus
samples were calculated from the expression we arrive at the following expressions for the hole mobility as
1 a function of temperature and concentration:
p=-.
4NPe
In (9) pe is substitutedfrom (8). The resistivity thuscom- 1.36 X lo8 T-2.23
t (13)
puted as a functionoftemperature is shownin Fig. 2 as a 1 -t [N/(2.35 X l O I 7 TZa4)]0.88 *
ARORA e t al.: ELECTRON AND HOLE MOBILITIES IN SILICON 295
The maximum deviation i.n the mobility calculated from (13) Marton, Ed., vol. 7. New York: Academic, 1955, pp. 85-182.
and those calculated from(7) and (10)-(12) for concentrations [31 D. Long, “Scattering of conduction electrons by lattice vibrations
in silicon,” Phys. Rev., vol. 120, no. 6,pp. 2026-2032, Dec.
less than 2 X 10l8 cm-3 are given in Table 11. As in the case 1960.
of n-type samples, (13) was used to calculate the resistivity of [41 P. Norton, T. Braggins, and H. Levinstein, “Impurity and lattice
scatteringparameters as determinedfrom Hall and mobility
p-type boron-doped samples and compared with experimental analysis inn-type silicon,” Phys. Rev., vol. B8, no. 12, pp.
value of resistivities reported in the literature [ 6 ] , [ l o ] . The 5632-5653, Dec. 1973.
dashedlinein Fig. 2are the resistivity calculated using (9) [51 F. Mousty, P. Ostoja,and L. Passari, “Relationshipbetween
resistivity and phosphorous concentrations in silicon,” J. Appl.
where p e is replaced by fib of (13) while the points are the Phys., vol. 45, no. 10, pp. 4576-4580, Oct. 1974.
correspondingexperimentalpoints. As can be seen,theo- P. W. Chapman, 0. N. Tufte, J . D. Zook, and D. Long, “Electri-
retically calculated resistivities are within 10 percent of these cal properties of heavily doped silicon,” J. Appl. Phys., vol. 34,
no. 11, pp. 3291-3295, Nov. 1963.
measured experimentally except in the resistivity range 5-9 X [71 G . Baccarani and P. Ostoja, “Electron mobility empirically related
cmV3 where resistivity shows anabnormal behavior as to the phosphorous concentration,” Solid-state Electron., vol. 18,
in the case of n-type samples.This further proves the point no. 6, pp. 579-580, June 1975.
V. I. Fistul, Heavily Doped Semiconductors. New York: Plenum,
that the temperature variation of the parameters pmin, Nref, 1969, p. 77.
and a are essentially the Same for both electrons and holes. S. S. Li and W. R. Thurber, “The dopant density and temperature
Thus it can be seen that (13) represents hole mobility varia- dependence of electron mobility and resistivity in n-type silicon,”
Solid-state Electron., vol. 20, no. 7, pp. 609-616, July 1977.
tions with temperature and concentration within an error of S. S. Li, “The dopant densityand temperature dependence of
less than 14 percent in thetemperature range 200-400 K. hole mobility and resistivity in boron doped silicon,” Solid-state
This seems reasonable taking into consideration the spread in Electron., vol. 21, no. 10, pp. 1109-111’7, Oct. 1978.
J. B. Krieger, J.Gruenebaum, and T. Meeks, “Resistivity of
the mobility values reported in the literature. n-type degenerately doped silicon at low temperature: Dielectric
screening effect,” Phys. Rev., vol. B9, no. 8, pp. 3627-3629,
CONCLUSIONS Apr. 1974.
M. Finetti and A. M. Mazzoue, “Impurity effects on conduction
In conclusion, an analyticalexpression has been given for in heavily doped n-type silicon,” J. Appl. Phys., vol. 48, no. 11,
electron and hole mobility in silicon as a function of concen- pp. 4597-4600, NOV.1977.
L. M. Scarfone and L. M. Richardson, “Electron mobilities based
tration and temperature. The resulting expression allows one on an exact numerical analysis of the dielectric-function-
to obtain electron and hole mobility as a function of concen- dependent linearized Poisson’s equationfor the potential of
trationin an extendedandcontinuoustemperature range impurity ions in semiconductors,” Phys. Rev. B , vol. 22, no. 2,
pp. 982-990, July 1980.
within 13 percent of reported experimental values. 1141 D. M. Caughey and R. F. Thomas, “Carrier mobility in silicon
empirically related to doping and field,”Proc. IEEE, vol. 5 5 , pp.
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