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Description
The STDRIVE601 is a high voltage device
manufactured with BCD6s offline technology. It is
a single-chip with three half-bridge gate drivers for
N-channel power MOSFETs or IGBTs suitable for
3-phase applications.
SO-28 All device outputs can sink and source 350 mA
and 200 mA respectively. Prevention from cross
conduction is ensured by interlocking and
Features deadtime function.
High voltage rail up to 600 V The device has dedicated input pins for each
output and a shutdown pin. The logic inputs are
Driver current capability:
CMOS/TTL compatible down to 3.3 V for easy
– STDRIVE601: interfacing with control devices. Matched delays
– 200 mA source current @ 25 °C between low-side and high-side sections
– 350 mA sink current @ 25 °C guarantee no cycle distortion and allow high
frequency operation.
dV/dt transient immunity ±50 V/ns
Gate driving voltage range from 9 V to 20 V The STDRIVE601 embeds a comparator
featuring advanced SmartSD function also
Overall input-output propagation delay: 85 ns integrated in the device, ensuring fast and
Matched propagation delay for all channels effective protection against fault events like
3.3 V, 5 V TTL/CMOS inputs with hysteresis overcurrent, overtemperature, etc.
Integrated bootstrap diodes Dedicated UVLO protection on the low-sides and
each of the high-side driving sections allow to
Comparator for fast overcurrent protection
prevent the power switches from operating in low
Smart shutdown function efficiency or dangerous conditions.
Interlocking and deadtime function The integrated bootstrap diodes as well as all of
Dedicated Enable pin the integrated features of this IC make the
UVLO function on low-side and high-sides application PCB design easier, more compact and
simple thus reducing the overall bill of material.
Contents
1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1 Inputs and outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Deadtime . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3 VCC UVLO protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.4 VBO UVLO protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Comparator and smart shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.1 SO-28 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
1 Block diagram
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3 Electrical data
4 Electrical characteristics
HIN is referred to channels HIN1, HIN2, HIN3; LIN is referred to channels LIN1, LIN2, LIN3.
Dynamic characteristics
2 vs. 27 High/Low-side driver
ton 3 vs 23 turn-on propagation 45 85 120 ns
4 vs 19 delay
5 vs. 16 High/Low-side driver OUT = 0 V
toff 6 vs. 15 turn-off propagation BOOT = VCC 45 85 120 ns
7 vs. 14 delay CL = 1 nF
Vin = 0 to 3.3 V
10 vs.
Enable to high/low-
14, 15,
tEN side driver 245 385 520 ns
16, 19, propagation delay
23, 27
2,3,4, LIN HIN input filter
tFIN 30 40 50 ns
5,6,7 time
tFEN 10 EN input filter time 200 300 400 ns
tr 14, 15, Rise time CL= 1 nF 120 160 ns
16, 19,
tf 23, 27 Fall time CL= 1 nF 50 75 ns
Delay matching
MT high/low side turn- 0 30 ns
on/off(4)
DT Deadtime CL= 1 nF 200 300 400 ns
(5)
MDT Matching deadtime CL= 1 nF 0 50 ns
1. VBO = BOOT - OUT.
2. Values provided by characterization, not tested.
3. Comparator is disabled when VCC is in UVLO condition.
4. MT = max. (|ton(LVG) - toff(LVG)|, |ton(HVG) - toff(HVG)|, |toff(LVG) - ton(HVG)|, |toff(HVG) - ton(LVG)|).
5. MDT = | DTLH - DTHL |, refer to Figure 5.
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5 Functional description
Table 6. Inputs truth table (applicable when device is not in UVLO or SmartSD
protection)
Input pins Output pins
5.2 Deadtime
The deadtime feature, in companion with interlocking feature, guarantees that driver outputs
of the same channel are not high simultaneously and at least a DT time passes between the
turn-off of one driver's output and the turn-on of the companion output of the same channel.
If a deadtime longer than the internal DT is applied to LIN and HIN inputs by the external
controller, the internal DT is ignored and the outputs follow the deadtime determined by the
inputs.
Refer to Figure 4 for the dead time and interlocking waveforms.
When VCC voltage goes below VCCTHOFF threshold all the outputs are switched off, both
LVG and HVG. When VCC voltage reaches VCCTHON threshold the driver returns to normal
operation and sets the LVG outputs according to actual input pins status; HVG is also set
according to input pin status if the corresponding VBO section is not in UVLO condition.
The FAULT output is kept low when VCC is in UVLO condition. The following figures show
some examples of typical operation conditions.
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If the impulse on CIN pin is higher than VREF and wider than tFCIN, the SmartSD logic is
triggered and immediately sets all of the driver outputs to low-level (OFF).
At the same time, FAULT is forced low to signal the event (for example to an MCU input)
and OD starts to discharge the external COD capacitor used to set the duration of the output
disable time of the fault event.
The FAULT pin is released and driver outputs restart following the input pins as soon as the
output disable time expires.
The overall disable time is composed of two phases:
The OD unlatch time (t1 in Figure 9), which is the time required to discharge COD capacitor
down to VSSDl threshold. The discharge starts as soon as the SmartSD comparator is
triggered.
The OD restart time (t2 in Figure 9), which is the time required to recharge the COD
capacitor up to the VSSDh threshold. The recharge of COD starts when the OD internal
MOSFET is turned-off, which happens when the fault condition has been removed
(CIN < VREF - CINhyst) and the voltage on OD reaches the VSSDl threshold. This time
normally covers most of the overall output disable time.
If no external pull-up is connected to OD, the external COD capacitor is discharged with a
time constant defined by COD and the internal MOSFET's characteristic (Equation 1), and
the Restart time is determined by the internal current source IOD and by COD (Equation 2).
Equation 1
V OD
t 1 R ON _OD C OD ln -------------
-
V
SSDl
Equation 2
C OD V SSDh V SSDl – V OD
- ln -------------------------------
t 2 ------------------------------ -
I OD V – V
SSDh OD
In case the OD pin is connected to VCC by an external pull-up resistor ROD_ext, the OD
discharge time is determined by the external network ROD_ext COD and by the internal
MOSFET's RON_OD (Equation 3), while the Restart time is determined by current in ROD_ext
(Equation 4).
Equation 3
V OD – V on
t 1 C OD R OD_ext //R ON _OD ln -----------------------------
V
SSDl – V on
Equation 4
V SSDl – V OD
t 1 C OD R OD_ext ln -------------------------------
-
V
SSDh – V OD
where
R ON _OD
- VCC ;
V on = --------------------------------------------- V OD = VCC
R OD_ext + R ON _OD
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7 Package information
A 2.35 2.65
A1 0.10 0.30
B 0.33 0.51
C 0.23 0.32
D 17.70 18.10
E 7.40 7.60
e 1.27
H 10.00 10.65
h 0.25 0.75
L 0.40 1.27
k 0 8 DEGREES
ddd 0.10
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8 Ordering information
9 Revision history
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