CERTC - Complete Eng’g Review & Training Center Weekly Exam 7 ELECTRONICS

Electronics Engineering
B. 80 D. 50
1. The efficiency of class C amplifier is generally 18. A transistor operating in CB configuration has Ic=2.98 mA, Ie=3 mA
A. Greater than Class A C. Better than Class B and Ico=0.01 mA. What current will flow in the collector circuit of this
B. Higher than Class AB D. All of the above* transistor when connected in CE configuration with base current of 30.
2. The SCS can be turned on by C. 4.51 mA C. 3.97 mA*
A. positive pulse on the cathode C. Both A and B* D. 1.25 mA D. 2.75 mA
B. negative pulse on the anode D. Neither 19. A class C amplifier is driven by a 200 kHz signal. The transistor is on
3. A certain inverting amplifier has a closed loop gain of 25. The op-amp for 1 us, and the amplifier is operating over 100 % of its load. If
has an open loop gain of 100,000. If another op-amp with an open Ic(sat)=100 mA and Vce(sat)= 0.2 V. What is the average power
loop gain of 200,000 is substituted in the configuration, the closed loop dissipation?
gain will C. 3 mW C. 5 mW
A. Increase by 5 C. Decrease by 10 D. 4 mW* D. 6 mW
B. Remains at 25* D. Remains at 35 20. A power transistor develops a power loss of 3.42 W and is mounted
4. If a certain op-amp has a midrange open loop gain of 200,000 and on a square heat sink. Transistor is linearly derated from 20 to 200 C
unity gain frequency of 5 MHz, the gain bandwidth product is ___. at 40 C/watt. Calculate the heat sink temperature.
A. 5,000,000 Hz* C. 1,000,000 Hz C. 63.2 C* C. 25 C
B. 3,000,000 Hz D. Insufficient Data D. 52.6 C D. 75 C
5. An SCR can only be turned off 21. A full wave rectified signal of 18 Vp is connected to a 400uF filter
A. Forced Commutation C. Both A amd B* capacitor. What is dc voltage across the capacitor at a load of 100
B. Anode Current Interruption D. None mA?
6. What type of filter is used to block the passage of current for a narrow C. 17.35 V C. 18.24 V
band of frequency while allowing current to flow at all frequencies D. 16.96 V* D. 19.90 V
above or below this band? 22. A half wave rectifier develops 20 Vdc. What is the value of the ripple
A. Band Pass Filter C. High Pass Filter voltage?
B. Low Pass Filter D. Band Reject Filter* C. 7.7 V* C. 7.32 V
7. The AC load line is the same as the dc load line when the ac collector D. 7.29 V D. 7.85 V
resistance equals the 23. A filter circuit provides an output of 28 V unloaded and 25 V under full
A. DC emitter resistance C. DC collector resistance* load operation. Calculate the percentage voltage regulation.
B. AC emitter resistance D. Vs/Ic C. 10% C. 12%*
8. The liberation or absorption of heat when an electric current flows from D. 14% D. 16%
a warmer to a cooler part of a conductor is called _____. 24. Ten 2.2 V cells, each having an internal resistance of 0.1 ohm are
A. Thomson Effect* C. Miller Effect connected in series to a load of 21 ohms . Determine the p.d. at the
B. Mossbauer Effect D. Huygens Effect battery terminals.
9. A certain condition wherein a nucleon can be stimulated to emit a very C. 20 V C. 22 V*
sharply defined beams of gamma rays. D. 21 V D. 23 V
A. Thomson Effect C. Miller Effect 25. Determine the peak and rms voltages on the secondary of a
B. Mossbauer Effect* D. Huygens Effect transformer connected across a bridge rectifier to provide a no load dc
10. The term defines the capacity of a soldering iron to generate and voltage of 9 V.
maintain a satisfactory soldering temperature while giving up heat to C. Vm=28.18 V, Vrms=20 V
the joint being soldered? D. Vm=14.14 V, Vrms= 10 V*
A. Thermal Inertia* C. Solder Stability E. Vm=28.18 V, Vrms=10 V
B. Tip Accuracy D. Working Efficiency F. Vm=14.14 V, Vrns= 20 V
11. The process of causing the pressure in a liquid filled container to be 26. A voltage regulator with a no-load outout dc voltage of 12 V is
reduced below the vapor pressure of the liquid causing the liquid to connected to a load with resistance of 10. If the load resistance
evaporate at lower temperature than the normal. decreases to 7.5, the load voltage will decrease to 10.9 V. The load
A. Thermal Sublimation C. Vacuum Vaporization current will be ______ and the percent loaf regulation is ______.
B. Vacuum Evaporation* D. Field Point Convertion C. 1.45 A, 90% C. 1.45 A, 10.09%*
D. 1.2 A, 90.8% D. 1.2 A, 10.09%
12. At room temperature the barrier potential in a silicon diode is _____.
A. 0.1 V C. 0.3 V 27. N type silicon is obtained by doping silicon with ________.
B. 0.7 V* D. 1 V C. Germanium C. Aluminum
D. Boron D. Phosporus
13. An op amp has a specified transient response time of 0.4 us, calculate
the unity gain bandwidth 28. At room temperature the barrier potential in a silicon diode is _____.
A. 8.75 MHz C. 0.875 MHz* C. 0.1 V C. 0.3 V
B. 87.5 MHz D. 1.875 MHz D. 0.7 V D. 1 V
14. An op amp uA741 has an 90 dB CMRR and a 200,000 differential- 29. The cut in voltage of a diode is nearly equal to _______.
mode voltage amplification. What is the common mode voltage gain of C. Applied Forward Voltage C. Barrier Potential
the op amp? D. Applied Reverse Voltage D. None
A. 632.4 C. 6.334 * 30. A reverse voltage of 18 V is applied to a semiconductor diode. The
B. 63.24 D. 6324 voltage across the depletion layer is ________.
15. As compared to an ordinary p-n diode, the extent of impurity atoms in C. 0 V C. 0.7 V
a tunnel diode _________. D. About 10 V D. 18 V
A. Is More* C. Is Less 31. As compared to an ordinary p-n diode, the extent of impurity atoms in
B. Maybe More or Less D. Is almost the same a tunnel diode _________.
16. Two thyristor of same rating and same specificafion C. Is More C. Is Less
A. Will have equal turn on and turn off periods D. Maybe More or Less D. Is almost the same
B. Will have equal turn on but unequal turn off periods 32. In a reverse biased p-n junction, the reverse bias is 4V. The junction
C. May have equal or unequal turn on or turn off periods* capacitance is about ______.
D. Will have unequal turn on ot turn off periods E. 0.1 F C. 4 uF
17. Calculate the value of beta (B). If the leakage current of a transistor F. 10 nF D. 20 pF
are Icbo= 5uA and Iceo=0.4 mA 33. P-Type Semiconductor is also known as _______
A. 79 * C. 81 A.

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