PD - 94363A

IRF6602
DirectFETTM Power MOSFET
l Application Specific MOSFETs VDSS RDS(on) max ID
l Ideal for CPU Core DC-DC Converters
20V 13mΩ@VGS = 10V 11A
l Low Conduction Losses
l Low Switching Losses 19mΩ@VGS = 4.5V 8.8A
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques

DirectFET™ ISOMETRIC

Description
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 11
ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 8.8 A
IDM Pulsed Drain Current  88
PD @TC = 25°C Power Dissipation 2.3
W
PD @TC = 70°C Power Dissipation 1.5
Linear Derating Factor 18 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJA Junction-to-Ambientƒ ––– 55
RθJA Junction-to-Ambient„ 12.5 –––
RθJA Junction-to-Ambient… 20 ––– °C/W
RθJC Junction-to-Case† 3.0 –––
RθJ-PCB Junction-to-PCB mounted 1.0 –––

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IRF6602
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 10 13 VGS = 10V, ID = 11A ƒ
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 14 19 VGS = 4.5V, ID = 8.8A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 VDS = 16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 125 VDS = 16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 20 ––– ––– S VDS = 10V, ID = 8.8A
Qg Total Gate Charge Cont FET ––– 13 20 VGS = 5.0V, VDS = 10V, ID = 8.8A
Qg Total Gate Charge Sync FET ––– 11 ––– VGS = 5.0V, VDS < 100mV
Qgs1 Pre-Vth Gate-Source Charge ––– 3.5 ––– VDS = 16V, ID = 8.8A
Qgs2 Post-Vth Gate-Source Charge ––– 1.3 ––– nC
Qgd Gate to Drain Charge ––– 4.8 –––
Q sw Switch Charge (Qgs2 + Qgd) ––– 6.1 –––
Qoss Output Charge ––– 19 ––– VDS = 16V, VGS = 0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V
tr Rise Time ––– 58 ––– ID = 8.8A
ns
td(off) Turn-Off Delay Time ––– 15 ––– RG = 1.8Ω
tf Fall Time ––– 5.5 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 1420 ––– VGS = 0V
Coss Output Capacitance ––– 960 ––– VDS = 10V
Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 97 mJ
IAR Avalanche Current ––– 8.8 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 11
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 88
(Body Diode)  p-n junction diode. S

––– 0.83 1.2 V TJ = 25°C, IS = 8.8A, VGS = 0V ƒ

VSD Diode Forward Voltage
––– 0.65 ––– TJ = 125°C, IS = 8.8A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 42 62 ns TJ = 25°C, IF = 8.8A, VR=15V
Q rr Reverse Recovery Charge ––– 51 77 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 43 64 ns TJ = 125°C, IF = 8.8A, VR=15V
Q rr Reverse Recovery Charge ––– 55 82 nC di/dt = 100A/µs ƒ
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1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
4.5V 4.5V
ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

4.0V 4.0V
3.5V 3.5V
3.3V 3.3V
100 3.0V 100 3.0V
BOTTOM 2.7V BOTTOM 2.7V

2.7V
10 10
2.7V

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 150°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100.00

2.0
I D = 11A
T J = 150°C
ID , Drain-to-Source Current (Α )

1.5
R DS(on) , Drain-to-Source On Resistance

T J = 25°C
(Normalized)

10.00
1.0

0.5

VDS = 15V
20µs PULSE WIDTH
1.00 
V GS = 10V
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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100000 6


VGS = 0V, f = 1 MHZ ID = 8.8A
VDS = 16V
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
5
10000 Coss = Cds + Cgd
C, Capacitance(pF)

VGS, Gate-to-Source Voltage (V)

4
Ciss
1000 Coss

100 Crss
1

10
0
1 10 100 0 4 8 12 16

VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)


TJ = 150 ° C
100
10
I SD, Reverse Drain Current (A)

100µsec
10


T J= 25 ° C
1msec
1
10msec
1
Tc = 25°C
Tj = 150°C

V GS = 0 V
0.1
Single Pulse
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 1 10 100
V SD,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF6602

12
RD
VDS

VGS
9
D.U.T.
RG
+
-VDD
I D , Drain Current (A)

4.5V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

3 Fig 10a. Switching Time Test Circuit

VDS
90%
0
25 50 75 100 125 150

TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Ambient Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50
(Z thJA )

0.20
10

0.10
Thermal Response


0.05

P DM
0.02
1
0.01 t1

t2

0.1
 SINGLE PULSE
(THERMAL RESPONSE)
 Notes:
1. Duty factor D =
2. Peak T
t1/ t

J = P DM x Z thJA
2
+T A

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t 1, Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF6602

R DS(on) , Drain-to -Source On Resistance (m Ω )

R DS (on) , Drain-to-Source On Resistance (m Ω)

20 1150

950

15 750
VGS = 4.5V

550

10 VGS = 10V 350

150
ID = 11A

5 -50
0 20 40 60 80 100 2.0 4.0 6.0 8.0 10.0

ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD


+ 250
V
D.U.T. - DS ID
VG
VGS TOP 3.9A
3mA Charge 7.0A
200 BOTTOM 8.8A
IG ID
Current Sampling Resistors
E AS , Single Pulse Avalanche Energy (mJ)

Fig 13a&b. Basic Gate Charge Test Circuit 150

and Waveform
100

15 V

50
V (B R )D S S
tp L DRIVE R
VD S

RG D .U .T +
V 0
- DD
IA S A 25 50 75 100 125 150
20V
tp 0.01 Ω Starting Tj, Junction Temperature ( ° C)
IAS

Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
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DirectFET™ Outline Dimension

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IRF6602
DirectFET™ PCB Footprint

DirectFET™ Tape and Reel Dimension

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 IRF6602

DirectFET™ Part Marking

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Used double sided cooling, mounting pad.
… Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
† TC measured with thermal couple mounted to top (Drain) of part.
‚ Starting TJ = 25°C, L = 2.5mH, RG = 25Ω, IAS = 8.8A. (See Figure 14)

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
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