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Gu-Yeon Wei
Division of Engineering and Applied Sciences
Harvard University
guyeon@eecs.harvard.edu
Wei 1
Overview
• Reading
– S&S: Chapter 4.11
• Supplemental Reading
• Background
– Given our understanding of small-signal models and analysis, we
continue our investigation of BJT circuits by looking at single-stage
BJT amplifiers of various configurations. While there is a lot more
detail we can discuss in terms of BJTs and their large signal
behavior, we will stop with the discussion of BJT amplifiers and
continue next lecture with MOSFETs which we will focus on for the
rest of the semester.
– For more information on BJT circuits, read S&S 4.12~15
vs vπ rπ rο RC vo
vπ rπ vo
= vo = − g m vπ (RC ro ) = − g m (RC ro )
vs Rs + rπ vπ
vo vo vπ r β (RC ro )
= = − π g m (RC ro ) = − Rin = rπ Ro = ro RC
vs vπ vs Rs + rπ Rs + rπ
vo = −αie RC vb = ie (re + Re )
vo − αRC − RC
= ≅
vb re + Re re + Re
– NOTE: Voltage gain between base and collector is equal to
ratio of total resistance in the collector to the total resistance in
the emitter.
• To find the total gain,
vo vo vb Ri − RC βRC
= = =−
vs vb vb Ri + Rs re + Re Rs + (β + 1)(re + Re )
• Characteristics with Re :
– gain is less with but less dependent on β
– input resistance is higher
– allows higher input signal voltage
• This time, ground the base and drive the input signal into the emitter through a
coupling capacitor (only passes ac signals)
• The last basic configuration is to tie the collector to a fixed voltage, drive an
input signal into the base and observe the output at the emitter
• Also called an emitter follower since the emitter follows the input signal
• Used for connecting a source with a large Rs to a load with low resistance
vb (β + 1)[re + (ro RL )] vo ro RL
= =
vs Rs + (β + 1)[re + (ro RL )] vb re + ro RL
vo (β + 1)(ro RL ) ro RL
Av ≡ = =
vs Rs + (β + 1)[re + (ro RL )] Rs
+ re + (ro RL )
β +1
– gain is less than unity, but close (to unity) since β
is large and re is small
B rx Cµ C
gmvπ
rπ vπ Cπ ro
E
– Cπ and Cµ are bias dependent values which can be found (approximated)
from the DC bias conditions of the circuit
gmvπ C
rπ vπ Cπ ro
• Find Ic/Ib Ic g m − sC µ
Vπ = I b (rπ Cπ C µ ) =
I b 1 rπ + s (Cπ + C µ )
– at frequencies over which the model is valid, gm >> ωCµ
Ic g m rπ β0
≅ =
( )
I b 1 + s Cπ + Cµ rπ 1 + s Cπ + Cµ rπ ( )
β0 is the low-frequency value of β and current gain rolls off with a single pole
at ωβ 1 gm g 2π
ωβ = ωT = β 0ω β = → fT = m
(Cπ + Cµ )rπ Cπ + Cµ Cπ + Cµ