Silicon Schottky Diodes BAS 70 …

● General-purpose diodes for high-speed switching

● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package1)
(tape and reel)
BAS 70 73s Q62702-A118 SOT-23

BAS 70-04 74s Q62702-A730

BAS 70-05 75s Q62702-A711

BAS 70-06 76s Q62702-A774

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 01.97

 BAS 70 …

● General-purpose diodes for high-speed switching

● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package1)
(tape and reel)
BAS 70-07 77s Q62702-A846 SOT-143

Maximum Ratings per Diode

Parameter Symbol Values Unit
Reverse voltage VR 70 V
Forward current IF 70 mA
Surge forward current, t ≤ 10 ms IFSM 100
Total power dissipation Ptot 250 mW
BAS 70 TS ≤ 66 ˚C2)
BAS 70-04 … TS ≤ 40 ˚C2)
Junction temperature Tj 150 ˚C
Operating temperature range Top – 55 … + 150
Storage temperature range Tstg – 55 … + 150

Thermal Resistance
Junction - ambient3) Rth JA K/W
BAS 70 ≤ 405
BAS 70-04 … ≤ 575
Junction - soldering point Rth JS
BAS 70 ≤ 335
BAS 70-04 … ≤ 435

1) For detailed information see chapter Package Outlines.

2) Max. 450 mW per package.
3) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 2
 BAS 70 …

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Breakdown voltage V(BR) 70 – – V
IR = 10 µA
Reverse current IR µA
VR = 50 V – – 0.1
VR = 70 V – – 10
Forward voltage VF mV
IF = 1 mA – 375 410
IF = 10 mA – 705 750
IF = 15 mA – 880 1000
Diode capacitance CT – 1.6 2 pF
VR = 0, f = 1 MHz
Charge carrier life time τ – – 100 ps
IF = 25 mA
Differential forward resistance rf – 30 – Ω
IF = 10 mA, f = 10 kHz

Semiconductor Group 3
 BAS 70 …

Characteristics per Diode at Tj = 25 ˚C, unless otherwise specified.

Forward current IF = f (VF) Reverse current IR = f (VR)

Diode capacitance CT = f (VR) Differential forward resistance rf = f (IF)

f= 1 MHz f= 10 kHz

Semiconductor Group 4
 BAS 70 …

Forward current IF = f (TA*; TS)

* Package mounted on epoxy

Semiconductor Group 5