StrongIRFET™

IRFB7537PbF
IRFS7537PbF
IRFSL7537PbF
Application HEXFET® Power MOSFET
 Brushed Motor drive applications
 BLDC Motor drive applications   D VDSS 60V
Battery powered circuits
 Half-bridge and full-bridge topologies RDS(on) typ. 2.75m
 Synchronous rectifier applications G
max 3.30m
 Resonant mode power supplies
S
 OR-ing and redundant power switches ID 173A
 DC/DC and AC/DC converters
 DC/AC Inverters

D D

Benefits S S
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S D
D G G
Fully Characterized Capacitance and Avalanche SOA G
Enhanced body diode dV/dt and dI/dt Capability TO-220AB D2Pak TO-262
Lead-Free, RoHS Compliant IRFB7537PbF IRFS7537PbF IRFSL7537PbF

G D S
Gate Drain Source

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB7537PbF TO-220 Tube 50 IRFB7537PbF
IRFSL7537PbF TO-262 Tube 50 IRFSL7537PbF
Tube 50 IRFS7537PbF
IRFS7537PbF D2-Pak
Tape and Reel Left 800 IRFS7537TRLPbF

12 200
RDS(on), Drain-to -Source On Resistance (m)

ID = 100A
10

150
ID, Drain Current (A)

6 TJ = 125°C 100

50
2 TJ = 25°C

0 0
2 4 6 8 10 12 14 16 18 20
25 50 75 100 125 150 175
VGS, Gate -to -Source Voltage (V) TC , Case Temperature (°C)

Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature

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IRFB/S/SL7537PbF
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 173
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 122 A 
IDM Pulsed Drain Current  700
PD @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and
-55 to + 175  
TSTG Storage Temperature Range °C  
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)  
Avalanche Characteristics 
EAS Single Pulse Avalanche Energy  270
mJ
EAS (L=1mH) Single Pulse Avalanche Energy  554
IAR Avalanche Current  A
See Fig 15, 16, 23a, 23b
EAR Repetitive Avalanche Energy  mJ
Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.65
RCS Case-to-Sink, Flat Greased Surface 0.50 –––
°C/W  
RJA Junction-to-Ambient (TO-220)  ––– 62
RJA Junction-to-Ambient (PCB Mount) (D2-Pak) ––– 40

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 40 ––– mV/°C Reference to 25°C, ID = 1mA 
––– 2.75 3.30 VGS = 10V, ID = 100A 
RDS(on) Static Drain-to-Source On-Resistance m
––– 3.50 ––– VGS = 6.0V, ID = 50A 
VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 150µA
––– ––– 1.0 VDS =60 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 150 VDS =60V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.0 ––– 

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 54µH, RG = 50, IAS = 100A, VGS =10V.
 ISD  100A, di/dt  1130A/µs, VDD  V(BR)DSS, TJ 175°C.
 Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.

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IRFB/S/SL7537PbF

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 190 ––– ––– S VDS = 10V, ID =100A
Qg Total Gate Charge ––– 142 210 ID = 100A
Qgs Gate-to-Source Charge ––– 36 ––– VDS = 30V
nC  
Qgd Gate-to-Drain Charge ––– 43 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 99 –––
td(on) Turn-On Delay Time ––– 15 ––– VDD = 30V
tr Rise Time ––– 105 ––– ID = 100A
ns
td(off) Turn-Off Delay Time ––– 82 ––– RG= 2.7
tf Fall Time ––– 84 ––– VGS = 10V
Ciss Input Capacitance ––– 7020 ––– VGS = 0V
Coss Output Capacitance ––– 640 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 395 ––– ƒ = 1.0MHz, See Fig.7
pF  
Effective Output Capacitance
Coss eff.(ER) ––– 665 ––– VGS = 0V, VDS = 0V to 48V
(Energy Related)
Coss eff.(TR) Output Capacitance (Time Related) ––– 880 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics  
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol D

IS ––– ––– 173

(Body Diode) showing the
A G
Pulsed Source Current integral reverse
ISM ––– ––– 700
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V 

dv/dt Peak Diode Recovery dv/dt ––– 10 ––– V/ns TJ = 175°C,IS =100A,VDS = 60V
––– 39 ––– TJ = 25°C VDD = 51V
trr Reverse Recovery Time ns
––– 41 ––– TJ = 125°C IF = 100A,
––– 46 ––– TJ = 25°C di/dt = 100A/µs 
Qrr Reverse Recovery Charge nC
––– 56 ––– TJ = 125°C  
IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C 

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IRFB/S/SL7537PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

8.0V

ID, Drain-to-Source Current (A)

8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V 100 4.5V

10

60µs PULSE WIDTH

60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics

1000 2.4

RDS(on) , Drain-to-Source On Resistance

ID = 100A
VGS = 10V
2.0
ID, Drain-to-Source Current (A)

100
(Normalized)
TJ = 175°C 1.6
TJ = 25°C
10
1.2

1
0.8
VDS = 25V
60µs PULSE WIDTH
0.1 0.4
2 3 4 5 6 7 -60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

100000 14.0
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED ID = 100A
12.0
VGS, Gate-to-Source Voltage (V)

Crss = Cgd VDS = 48V

Coss = Cds + Cgd
VDS = 30V
10.0
C, Capacitance (pF)

10000 VDS= 12V

Ciss
8.0

Coss 6.0
Crss
1000
4.0

2.0

100 0.0
0.1 1 10 100 0 50 100 150
VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs.

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
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IRFB/S/SL7537PbF
1000 1000

100µsec

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

TJ = 175°C
100 100

1msec
OPERATION IN THIS AREA
TJ = 25°C LIMITED BY R
DS
(on)
10 10

1 1
10msec
Tc = 25°C
VGS = 0V Tj = 175°C DC
Single Pulse
0.1 0.1
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 0.1 1 10

VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

78 1.2
Id = 1.0mA
76 1.0

74
0.8
Energy (µJ)
72
0.6
70
0.4
68

0.2
66

64 0.0
-60 -20 20 60 100 140 180 0 10 20 30 40 50 60
TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)

Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy
5.1
RDS (on), Drain-to -Source On Resistance (m)

VGS = 5.5V
VGS = 6.0V
4.6 VGS = 7.0V
VGS = 8.0V
VGS = 10V

4.1

3.6

3.1

2.6
0 50 100 150 200
ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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IRFB/S/SL7537PbF
1

D = 0.50

Thermal Response ( Z thJC ) °C/W

0.20
0.1
0.10
0.05
0.02
0.01 0.01

SINGLE PULSE
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
100
Avalanche Current (A)

10

1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Avalanche Current vs. Pulse Width

300
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)
250 ID = 100A 1.Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a

200 temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
150 exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
100 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
50 6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
0
tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav  

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IRFB/S/SL7537PbF
4.5 12
IF = 60A
VGS(th), Gate threshold Voltage (V)

4.0 VR = 51V

9 TJ = 25°C
3.5 TJ = 125°C

IRRM (A)
3.0
6
2.5

2.0 ID = 150µA
ID = 250µA 3
ID = 1.0mA
1.5 ID = 1.0A

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/µs)

Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
15 225
IF = 100A IF = 60A
VR = 51V 200
VR = 51V
12 TJ = 25°C
175 TJ = 25°C
TJ = 125°C TJ = 125°C
150
9
QRR (nC)
IRRM (A)

125

6
100

75
3
50

0 25
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/µs) diF /dt (A/µs)

Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt

225
IF = 100A
200
VR = 51V

175 TJ = 25°C
TJ = 125°C
150
QRR (nC)

125

100

75

50

25
0 200 400 600 800 1000
diF /dt (A/µs)

Fig 21. Typical Stored Charge vs. dif/dt

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IRFB/S/SL7537PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

V(BR)DSS

15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS

Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds

Vgs

VDD 
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform

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IRFB/S/SL7537PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
YEA R 0 = 2000
N o t e : "P " in a s s e m b ly lin e p o s it io n ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7537PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L

LOT CODE 1789 PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW19, 1997
RECTIFIER
IN THE ASSEMBLYLINE "C" LOGO
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE WEEK 19
LINE C

OR

PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
ASSEMBLY
LOT CODE PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLYSITE CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7537PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

D2Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH PART NUMBER

LOT CODE 8024 INTERNATIONAL
ASSEMBLED ON WW 02, 2000 RECTIFIER F530S
IN THE ASSEMBLY LINE "L" LOGO
DATE CODE
YEAR 0 = 2000
ASSEMBLY
LOT CODE WEEK 02
LINE L

OR
PART NUMBER
INTERNATIONAL
RECTIFIER F530S
LOGO DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7537PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7537PbF

Qualification Information†  
Industrial
Qualification Level   (per JEDEC JESD47F) ††

Moisture Sensitivity Level TO-220 N/A

2
D Pak MSL1
TO-262 N/A
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
 Updated EAS (L =1mH) = 554mJ on page 2
10/07/14  Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V”. on page 2
 Updated package outline on page 9,10,11,12.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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