AON4703

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode
General Description Features
The AON4703 uses advanced trench technology to provide VDS (V) = -20V
excellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)
provided to facilitate the implementation of a bidirectional RDS(ON) < 90mΩ (VGS = -4.5V)
blocking switch, or for DC-DC conversion applications. RDS(ON) < 120mΩ (VGS = -2.5V)
Standard Product AON4703 is Pb-free (meets ROHS &
RDS(ON) < 160mΩ (VGS = -1.8V)
Sony 259 specifications). AON4703L is a Green Product
ordering option. AON4703 and AON4703L are electrically SCHOTTKY
identical. VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A

D K
A 1 8 K
A 2 7 K
S 3 6 D
G 4 5 D
G
DFN3X2-8L S A

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol MOSFET Schottky Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage V GS ±8 V
TA=25°C -3.4
ID
Continuous Drain CurrentA TA=70°C -2.7 A
B IDM
Pulsed Drain Current -15
Schottky reverse voltage VKA 20 V
TA=25°C 1.9
IF
Continuous Forward CurrentA TA=70°C 1.2 A
B IFM
Pulsed Forward Current 7
TA=25°C 1.7 0.96
PD W
Power Dissipation TA=70°C 1.1 0.62
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Parameter: Thermal Characteristics MOSFET Symbol Typ Max Units

Maximum Junction-to-AmbientA t ≤ 10s 51 75
A RθJA
Maximum Junction-to-Ambient Steady-State 88 110 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 28 35
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA t ≤ 10s 66 80
RθJA
Maximum Junction-to-AmbientA Steady-State 95 130 °C/W
Maximum Junction-to-LeadC Steady-State RθJL 40 50

Alpha & Omega Semiconductor, Ltd.

AON4703

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-16V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 -0.63 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 A
VGS=-4.5V, ID=-3.4A 73 90
mΩ
TJ=125°C 110 135
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A 99 120 mΩ
VGS=-1.8V, ID=-1.5A 133 160 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3.4A 4 7 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.83 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 540 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 72 pF
Crss Reverse Transfer Capacitance 49 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 12 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6.1 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3.4A 0.6 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=2.9Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44 ns
tf Turn-Off Fall Time 22 ns
trr Body Diode Reverse Recovery Time IF=-3.4A, dI/dt=100A/µs 21 ns
Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs 7.5 nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop IF=0.5A 0.39 0.5 V
VR=16V 0.1
Irm Maximum reverse leakage current mA
VR=16V, TJ=125°C 20
CT Junction Capacitance VR=10V 34 pF
trr SchottkyReverse Recovery Time IF=1A, dI/dt=100A/µs 5.2 10 ns
Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 0. June 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AON4703

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 6
-4.5V
VDS=-5V
-3.0V -2.5V
-8V
10 4

-2.0V
-ID (A)

-ID(A)
5 2 125°C
VGS=-1.5V

25°C
165

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

160 1.8
150 VGS=-1.8V
VGS=-2.5V
140
Normalized On-Resistance

1.6 ID=-2.5A
130
120
RDS(ON) (mΩ)

VGS=-1.8V
VGS=-2.5V 1.4
110 ID=-1.5A
VGS=-4.5V
100
1.2 ID=-3.4A
90
VGS=-4.5V
80
70 1
60
50 0.8
0 1 2 3 4 5 6 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

200 1E+01

1E+00

ID=-3.4A
1E-01 125°C
150
RDS(ON) (mΩ)

1E-02 25°C
-IS (A)

125°C
1E-03
100 25°C
1E-04

1E-05

50
1E-06
0 2 4 6 8
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AON4703

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 800

VDS=-10V
4 ID=-3.4A Ciss
600

Capacitance (pF)
-VGS (Volts)

3
400
2

200 Crss
1
Coss
165
0 0
0 2 4 6 8 0 5 10 15 20
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
TJ(Max)=150°C 20
TJ(Max)=150°C
TA=25°C
100µs TA=25°C
10µs 15
10.0 RDS(ON)
-ID (Amps)

Power (W)

limited 1ms
10
0.1s 10ms
1.0
1s 5

DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=75°C/W
Thermal Resistance

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AON4703

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY

1.0E+01 100
125°C f = 1MHz
80
1.0E+00

Capacitance (pF)
IF (Amps)

60
1.0E-01
40

1.0E-02
20
25°C
1.0E-03 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20
VF (Volts) VKA (Volts)
Figure 12: Schottky Forward Characteristics Figure 13: Schottky Capacitance Characteristics

0.5 1.0E-02

0.4
Leakage Current (A)

1.0E-03
IF=0.5A
VF (Volts)

0.3 1.0E-04 VR=16V

0.2 1.0E-05

0.1 1.0E-06
0 25 50 75 100 125 150 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C)
Figure 14: Schottky Forward Drop vs. Figure 15: Schottky Leakage current vs. Junction
Junction Temperature Temperature

10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA In descending order
ZθJA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=80°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.