Introducción A La Electrónica Capítulo 1

Electronic Devices
Eighth Edition
Floyd
ELECTRÓNICA I: Chapter 1
© 2008 Pearson Education, Inc.

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Summary
Bohr Atom
The Bohr model of the atom is that electrons can circle

the nucleus only in specific orbits, which correspond to
Energy
discrete energy levels called shells.
The atomic number is the
number of protons in the nucleus.
The outermost occupied shell is

called the valence shell and
electrons that occupy this shell are
called valence electrons. Nucleus Shell 1
Shell 2

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Summary
Conductors
Materials can be classified by their ability to conduct

electricity. This ability is related to the valence electrons.
Core (+1)
Copper is an example of an
excellent conductor. It has only
one electron in its valence band,
which can easily escape to the
+29
conduction band, leaving behind a
positive ion (the core). Like all
metals, copper has many free
electrons which are loosely held
by the attraction of the positive
metal ions.

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Summary
Insulators
Insulators have tightly bound electrons with few

electrons available for conduction.
Nonmetals, such as glass, air, paper, and rubber are excellent
insulators and widely used in electronics. Even these materials can
break down and conduct
electricity if the voltage is
high enough.

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Summary
Semiconductors
Semiconductors are between conductors and insulators

in their ability to conduct electricity.
Core (+4)
Silicon is an example of a single
element semiconductor. It has four
+14
electrons in its valence band.
+4
Unlike metals, silicon forms strong covalent

bonds (shared electrons) with its neighbors. +4 +4 +4
Intrinsic silicon is a poor conductor because most

of the electrons are bound in the crystal and take
+4
part in forming the bonds between atoms.

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Summary
Semiconductors
In intrinsic silicon, a few electrons can jump the energy

gap between the valence and conduction band. Having
moved into the conduction band, a “hole” (vacancy) is
left in the crystal structure.
Conduction Free
band electron
Energy gap Heat
Energy
Valence Hole
band
Electron-hole pair

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Summary
Semiconductors
Within the crystalline structure, there are two types

of charge movement (current):
1) The conduction band electrons are free to move under the
influence of an electric field.
2) The bound (valence) electrons move between atoms,
effectively moving holes from one atom to another as
illustrated. Holes act like positive charges, with their own
mobility. Holes Electrons
Si Si Si

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Summary
Semiconductors
Certain impurities will change the conductivity of

silicon. An impurity such as Antimony has an electron
that is not part of the bonding electrons so is free. This
creates an n-material.
Free (conduction) electron
Si from Sb atom
Where on the periodic table

would you expect to find another
Si Sb Si
element that could be used as an
impurity to create an n-material?
Elements above or below Sb will have Si
the same valence electron structure.

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Summary
Semiconductors
An impurity such as boron leaves a vacancy in the

valence band, creating a p-material. Both p- and n-
materials have energy levels that are different than
intrinsic silicon.
Si Hole from
B atom
Si B Si
Si

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Summary
The pn junction
A p- and an n-material together form a pn junction.

When the junction is formed, conduction electrons move to the p-
region, and fall into holes. Filling a hole makes a negative ion and
leaves behind a positive ion in the n-region. This creates a thin
region that is depleted of free charges at the boundary.
Depletion region
p region n region
What process stops the migration of – +
–
charge across the boundary? –
+
+
– +
A potential is built up (called the – +
– +
barrier potential) that prevents further – +
charge migration. – +

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Summary
The pn junction
The energy diagram for the n-region shows a lower

potential than for the p-region. Energy
Conduction
band
Why do you think that the
Valence
energy level in the n- region band
is lower than the p-region?
0
n region
The n-region tends to have filled valence p region Depletion
shells; conduction electrons are shielded by region
these electrons, so they are further away

from the nucleus and have less energy.
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Summary
Diodes
A diode is a semiconductor device with a single pn

junction and metal connections to leads. It has the
ability to pass current in only one direction.
p n
Depletion
region
ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

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Summary
Forward bias
Forward bias is the condition which allows current in

the diode. The bias voltage must be greater than the
barrier potential.
I F (mA)
V
+ F–
C
IF
–
R
+ VBIAS
Knee
+ – A B
VF
0
0 0.7 V

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Summary
Forward bias
Expanded view of a portion of the V-I characteristic curve for

forward bias. The dynamic resistance r′d decreases as you
move up the curve, as indicated by the decrease in the value of
VF / IF.

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Summary
Reverse bias
Reverse bias is the condition in which current is

blocked.
VBR 0
VR 0
VBIAS Knee
– +
I=0A
R
VBIAS
– +
IR

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Summary
Temperature effects
Temperature effect on the

diode V-I characteristic.
The 1 mA and marks on
the vertical axis are given
as a basis for a relative
comparison of the current
scales. The barrier
potential decreases by 2
mV for each degree
increase in temperature.

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Summary
Approximations
Three diode approximations are:

IF IF IF
VR VF VR VF VR VF
0.7 V 0.7 V
IR IR IR
Ideal Practical Complete
In addition, the complete model includes the effect of a large reverse

resistance that accounts for a tiny current when reverse-biased.
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Summary
Example
a) Determine the forward voltage and forward current for the diode in Figure (a)
for each of the diode models. Also find the voltage across the limiting resistor
in each case. Assume at the determined value of forward current.
b) Determine the reverse voltage and reverse current for the diode in Figure (b)
for each of the diode models. Also find the voltage across the limiting resistor
in each case. Assume IR = 1 mA.

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Summary
Example

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Summary
Example

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Summary
Example

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Summary
Example

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Summary
Typical diode packages
Some common configurations are

K
K A
K
A
A K
A K
A
K
K
A
K A
K K
A A
K
K
A

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Summary
Half-wave Rectifier
+ –
The diode conducts Vin + I

Vout
during the positive 0

t0 t1 t2
–
RL 0
t0 t1 t2
half cycle.
– +
It does not conduct I = 0A
– Vout
during the negative Vin
0
t0 t1 t2
RL 0
t0 t1 t2
+
half cycle.
What is the output if the diode is reversed? See next slide…

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Summary
Half-wave Rectifier
– +
– I
Vin Vout
0 RL 0
t0 t1 t2 t0 t1 t2
+
What is the output if the diode is reversed?

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Summary
Half-wave Rectifier
What is the average value of the half-

Average Value (VAVG) Example wave rectified voltage in Figure?
of the Half-Wave
Output Voltage:
VAVG=VP/π

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Summary
Half-wave Rectifier
Forward Voltage (VF) and Reverse Voltage (VR)

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Summary
Half-wave Rectifier
PIV at tp
The peak inverse
voltage (PIV) is – +
equal to the peak tp –
I=0
V 0
input voltage and is +
RL
the maximum
voltage across the -Vp(in)
diode when it is not VP(out)=VP(in)- VF
conducting.
Notice that the PIV can be found by applying Kirchhoff’s Voltage
Law. The load voltage is 0 V, so the input voltage is across the diode at tp.

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Summary
Half-wave Rectifier Example
Draw the output voltages of each rectifier for the indicated input voltages, as
shown in Figure (a) y (b).

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Summary
Half-wave Rectifier Example
The peak output voltage for The peak output voltage for
circuit (a) is: circuit (b) is:

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Summary
Full-wave Rectifier
A full-wave rectifier allows unidirectional (one-way)

current through the load during the entire of the input
cycle, whereas a half-wave rectifier allows current through
the load only during one-half of the cycle.
The result of full-wave rectification is an output voltage with a frequency twice

the input frequency and that pulsates every half-cycle of the input.

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Summary
Full-wave Rectifier
Find the average value of the full-wave

Average Value (VAVG) Example rectified voltage in Figure?
of the Full-Wave
Output Voltage:
VAVG=2VP/π

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Summary
Full-wave Rectifier
F D1
+ –
+
I
Vin
A center-tapped 0
–
Vout
0
+ +
transformer is used –
RL
–
with two diodes –

D2
+
that conduct on During the positive half-cycle, the upper diode is

forward-biased and the lower diode is reverse-biased.
alternating half- F
–
D1
+
cycles. –
Vin Vout
+
0 0
– +
RL
I –
+
+ –
D2
During the negative half-cycle, the lower diode is

forward-biased and the upper diode is reverse-biased.

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Summary
Full-wave Rectifier
D1
The PIV can be F
+ –
shown by applying Vin

+
KVL around the 0

–
Vp(sec) + +
green loop shown 2 RL
– –
for the reverse- – +
D2 Apply
biased diode. KVL
Notice that one-half of the peak
secondary voltage will be across
the reverse-biased diode.

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Summary
Full-wave Rectifier Example
(a) Show the voltage waveforms across each half of the secondary
winding and across RL when a 100 V peak sine wave is applied to the
primary winding in Figure.
(b) What minimum PIV rating must the diodes have?

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Summary
Full-wave Rectifier Example

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Summary
The Bridge Full-Wave Rectifier

F
The Bridge Full- I

D1
D3
Wave rectifier uses Vin
+ +
four diodes connected – –

D2 D4
RL
+
Vout 0
–
across the entire
Conduction path for the positive half-cycle.
secondary as shown.
F
I
D3 D1
– –
Vin
Ideally, what is the + +
D2 RL
+
Vout 0
D4 –
PIV equal to?
PIV = Vp(out) Conduction path for the negative half-cycle.

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Summary
The Bridge Full-Wave Rectifier
Determine the peak output voltage and current in the 3.3 kW load resistor if Vsec
= 24 Vrms. Use the practical diode model.
The peak output voltage is: F
Vp ( sec ) = 1.41Vrms = 33.9 V

D3 D1
Vp ( out ) = Vp ( sec ) - 1.4 V 120 V V(sec) =

24 Vrms
+
= 32.5 V D2 D4
RL
3.3 k W
Vp(out )
–
Applying Ohm’s law,

Ip(out) = 9.8 mA

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Summary
Power Supply Filters

Filtering is the process of smoothing the ripple from the rectifier.
Vin VOUT
Full-wave
0V Filter 0
rectif ier
(Ripple is exaggerated.)
The capacitor input filter is widely used. A half-wave rectifier and capacitor-
input filter are shown:
+
+
Vin VC RL
–
–

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Summary

Comparison of ripple voltages for half-wave and full-wave rectified
voltages with the same filter capacitor and load and derived from the same
sinusoidal input voltage.

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Summary
How is the ripple affected by the RC time constant?
+
+
Vin VC RL
–
–
A longer time constant will have less ripple for the same input voltage and
frequency.

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Summary
Power Supply Filters Example

Determine the ripple factor for the filtered bridge rectifier
with a load as indicated in Figure.

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Summary

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Summary
Power Supply Regulators

A voltage regulator can furnish nearly constant output with excellent ripple
rejection. Three-terminal regulators are require only external capacitors to
complete the regulation portion of the circuit.
F1
T1
D3 D1
Voltage
SW1
regulator
D2 D4
+ +
C1 C2

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Summary

Regulation performance is specified in two ways. Line regulation specifies
how much the dc output changes for a given change in regulator’s input
voltage. The text formula is based on a dc input voltage change to the
regulator due to a change in the ac line voltage.
 V 
Line regulation =  OUT 100%
 VIN 
Assume the dc input to a regulator changes by 1.0 V due to a change in

the ac line voltage. If the output changes by 1.5 mV due to the change,
what is the line regulation?
 V   1.5 mV 
Line regulation =  OUT 100% =  100% = 0.15%
 VIN   1.0 V 

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Summary

Load regulation specifies how much change occurs in the output voltage for
a given range of load current values, usually from no load (NL) to full load
(FL).
 V -V 
Load regulation =  NL FL 100%
 VFL 
Assume the dc output of a regulator changes from 5.00 V to 4.96 V when

the output is varies from no load to full load. What is the load regulation?
 V -V   5.00 V - 4.96 V 
Load regulation =  NL FL 100% =  100% = 0.8 %
 VFL   4.96 V 

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Summary
The Zener Diode

The zener diode is a silicon pn junction device designed
to operate in the reverse breakdown region.
IF
Ideally, the reverse

Cathode (K)
breakdown has a
Breakdown
constant breakdown VZ
VR VF
voltage. This makes it
Anode (A) useful as a voltage Reverse-
reference, which is its breakdown
region
Symbol
primary application.
IR
Characteristic curve

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Summary
The Zener Diode
Reverse characteristic of a
zener diode. VZ is usually
specified at a value of the
zener current known as the
test current.
Zener Regulation The ability

to keep the reverse voltage
across its terminals essentially
constant is the key feature of
the zener diode.

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Summary
Equivalent Circuit Model
Ideal zener diode equivalent circuit model and the characteristic curve.

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Summary
Zener Regulation with Variable Input Voltage

The temperature coefficient of a zener diode can be
specified as the percent change in zener voltage for each
degree Celsius change in temperature:
 V 
TC =  Z  T
 VZ 
where TC has units of %/oC.
Alternatively, it can be specified in terms of change in
voltage per degree Celsius change in temperature.
VZ
TC =
T
where TC has units of mV/oC.
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Summary
The Zener Diode Example

The temperature coefficient can be positive or negative,
depending on the zener voltage. Above 5.6 V, zeners
generally have a positive temperature coefficient; below
about 5.6 V, they have a negative temperature coefficient.
A 1N756 is an 8.2 V zener diode (8.2 V at 25o C) with a positive

temperature coefficient of 5.4 mV/oC. What is the output voltage if
the temperature rises to 50o C?
VZ = TC  T = ( 5.4 mV ) ( 25o C ) = 189 mV
VZ = 8.2 V + 0.189 V = 8.389 V

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Summary
Zener Diode Applications Example

In low current applications, a zener diode can be used as a
basic regulator.
R
A 1N756 (8.2 V at 25o C) is used as an 1.0 kW

8.2 V regulator in the circuit shown. + 1N756
VIN 8.2 V
What is the smallest load resistor that 18 V –
RL
can be used before losing regulation?

Assume an ideal zener diode model.
VIN - VZ 18 V - 8.2 V
The no load zener current is I NL = = = 9.8 mA
R 1.0 kW
8.2 V
This is the maximum load current in regulation. Therefore, RL = = 837 W
9.8 mA

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Summary

From the datasheet in next Figure, a 1N4736A zener diode has a ZZ of
The datasheet gives VZ 6.8 V at a test current, IZ, of 37 mA. What is the
voltage across the zener terminals when the current is 50 mA? When the
current is 25 mA? Figure represents the zener diode.

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Summary

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Determine the minimum and the maximum input voltages
that can be regulated by the zener diode 1N4733A in Figure.

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Summary

From the datasheet in Figure for the 1N4733A: VZ 5.1 V at IZ 49 mA, IZK
1 mA, and at IZ. For simplicity, assume this value of ZZ over the range of
current values. The equivalent circuit is shown in next Figure.

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Summary
Zener Diode Applications

Zeners are used in three-terminal regulators to establish a
reference voltage. These circuits are capable of much larger
load currents than basic zener regulators.
Control
VIN VOUT
element
Ref Error Feedback

amplifier element
Voltage
VIN VOUT
regulator
Reference ground

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Summary
Varactor Diodes
A varactor diode is a special purpose diode operated in
reverse-bias to form a voltage-controlled capacitor. The
width of the depletion region increases with reverse-bias.
If the depletion widens, does

the capacitance increase or p n
decrease?
A
Hint: C = Plate Plate
d Dielectric
Notice that as the effective – VBIAS +
plate separation widens, the

capacitance will decrease.
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Summary
Varactor Diodes
Capacitance tolerance range are the range of values of
capacitance for a given varactor. The data sheet will show
the minimum nominal and maximum values, which are
often plotted on a graph. 100
70 TA = 25 °C
50 f = 1 MHz
C T, diode capacitance (pF)

For example, you can 30
use this graph to read
the capacitance as a 10
function of reverse 7
5
voltage for various 3 1N5148
diodes. 1N5144
1N5139
1
1.0 3.0 5.0 7.0 10 30 50 60
VR , reverse voltage (V)

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Summary
Varactor Diodes
The capacitance ratio is the ratio of the diode’s capacitance

at the minimum reverse voltage (largest C) to the diode’s
capacitance at the maximum reverse voltage (smallest C).
Maximum Ratings (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit
Data sheets also include Reverse voltage VR 60 Volts
parameters such as maximum Forward current

RF power input*
IF
Pin
250
5.0
mA
Watts
ratings for current, power Device dissipation @ TA = 25 °C
Derate above 25°C
PD 400
2.67
mW
mW/° C
and temperature. Device dissipation @ TC = 25°C
Derate above 25°C
PC 2.0
13.3
Watts
mW/° C
Junction temperature TJ +175 °C
Storage temperature range T stg –65 to +200 °C
*The RF power input rating assumes that an adequate heat sink is provided

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Summary
Varactor Diodes
Varactor diodes are used in tuning applications. The applied
voltage controls the capacitance and hence the resonant
frequency.
+
VBIAS
By varying R2, the –
R2
reverse bias on D is R3
R1 C1 C2
changed. This changes Vin Vout
the capacitance, and
hence the resonant
L D
frequency.

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Summary
Optical Diodes
Diodes can be made to emit light (electroluminescence) or
sense light. Light-emitting diodes (LEDs) vary widely in
size and brightness – from small indicating lights and
displays to high-intensity LEDs that are used in traffic
signals, outdoor signs, and general illumination.
Basic operation of an LED

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Summary
Optical Diodes
LEDs emit a specific range 1.0
of wavelengths which 0.9
Light output (normalized)

0.8
depend on the construction 0.7

0.6
and dye material used. The 0.5
0.4
wavelength is given on the 0.3
0.2
specification sheet. LEDs 0.1
0
are available for visible 420 460 500 540 580 620 660 700 740
λ , wavelength (nm)
light and infrared.
What is the peak wavelength of a green LED? 540 nm

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Summary
Optical Diodes
Another characteristic shown in specification sheets is the
radiation pattern for the LED. This plot is an example of a
typical pattern in which light is concentrated in one direction.
30°
30° 20°
20° 10°°
10 00°° 10°
10° 20°
20° 30°
30°
40° 40°
A wider viewing 40° 40°
angle will show a
output
50° 50°
wider pattern such
output
50° 50°
Light
as the TLDR5400:
Light
60°
60° 60°
60°
70°
70° 70°
70°
80° 80°
80° 80°
90°
90° 90°
90°

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Summary
Optical Diodes
Typical LEDs.

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Summary
Optical Diodes
The forward voltage drop can vary from about 1.5 V to over
3 V depending on the type of diode, its color, and the
amount of forward current. You need to take into account the
specified maximum current allowed and the diode’s forward
drop when choosing a limiting resistor.
A certain bright red LED drops 2.2 V at a maximum current of 20 mA.

What series resistor is required to limit the current to 20 mA from a 5.0 V
source?
Vs - VLED 5.0 V - 2.2 V

R= = = 180 W
I 20 mA

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Summary
Optical Diodes
Other specifications, such as maximum power dissipation are
given on the manufacturer’s specification sheet. To determine
the power dissipated by the LED, multiply the forward
voltage by the forward current.
A certain bright red LED drops 2.2 V at 20 mA. What power is dissipated
by the LED?
P = IV = ( 20 mA )( 2.2 V ) = 44 mW

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Summary
Optical Diodes
An OLED (Organic Led) is a device that consists of two or three layers
of materials composed of organic molecules or polymers that emit light
with the application of voltage. OLEDs produce light through the process
of electrophosphorescence. The color of the light depends on the type of
organic molecule in the emissive layer.
Basic structure of a
top-emitting 2-layer OLED.
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Summary
Optical Diodes
A photodiode is a special light

sensitive diode with a clear
Reverse current, (I l)
window to the pn junction. It is
operated with reverse bias.
Reverse current increases with
greater incident light. Dark current
0 Irradiance, H
The tiny current that is present when the diode is not

exposed to light is called dark current.

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Summary
Optical Diodes
The photodiode is a device that operates in reverse bias, as shown in Figure

(a), where is the reverse light current. The photodiode has a small
transparent window that allows light to strike the pn junction. Some typical
photodiodes are shown in Figure (b). An alternate photodiode symbol is
shown in Figure (c).

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Summary
Laser Diodes
A laser diode converts an electrical signal into coherent

(monochromatic) light. It produces an intense narrow beam
of light from the recombination of electrons and holes in the
depletion region. Anode
Partially +
reflective
The process is similar to the Highly
reflective end
process that occurs in an LED, but end

Depletion
region
a laser diode differs because the p
pn junction
light emission is stimulated by a n
nearby photon to produce light
that is “in-step” and occurs within
an optical cavity. –
Cathode

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Summary
Laser Diodes
Laser diodes are the most common form of lasers made.

They are used in applications such as bar code readers, fiber
optic transmitters, CD readers, laser pointers, and
instruments such as rangefinders.
This is a photograph taken of a
green laser pointing to a star. Green
is highly visible at night and
widely used to point out objects in
the night sky. The beam is actually
quite narrow, but the camera focus
was set for infinity, so it appears
wider on the left due to the camera.
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Summary
Schottky Diodes
A Schottky diode is a metal-to-semiconductor contact diode

that is used primarily in high frequency and fast-switching
applications. It has a low forward voltage drop and high
efficiency but rather low reverse voltage rating.
Metal-silicon junction
n region Metal region

Cathode
Cathode Anode
n
Anode

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Summary
PIN Diodes
A PIN diode is a three layer diode consisting of a p and n

layers separated by a narrow intrinsic layer. In microwave
applications, the pin diode acts as a voltage-controlled
resistor. Certain types are used as photodetectors in fiber optic
systems.
A K
intrinsic
n region region p region
Anode Cathode
p i n

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Summary
Tunnel Diodes
A tunnel diode has a characteristic curve that shows a

negative resistance reading between B and C with a small
forward voltage. The negative resistance region is unstable.
Taking advantage of this characteristic, the tunnel diode can
be used in an oscillator IF
circuit at microwave B Negative-

resistance
frequencies. region
Tunneling C
A current
VF
0

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Electronic Devices

© 2008 Pearson Education, Inc.

The Bohr model of the atom is that electrons can circle

The outermost occupied shell is

© 2008 Pearson Education, Inc.

Materials can be classified by their ability to conduct

© 2008 Pearson Education, Inc.

Insulators have tightly bound electrons with few

© 2008 Pearson Education, Inc.

Semiconductors are between conductors and insulators

Unlike metals, silicon forms strong covalent

Intrinsic silicon is a poor conductor because most

© 2008 Pearson Education, Inc.

In intrinsic silicon, a few electrons can jump the energy

© 2008 Pearson Education, Inc.

Within the crystalline structure, there are two types

© 2008 Pearson Education, Inc.

Certain impurities will change the conductivity of

Where on the periodic table

the same valence electron structure.

© 2008 Pearson Education, Inc.

An impurity such as boron leaves a vacancy in the

© 2008 Pearson Education, Inc.

A p- and an n-material together form a pn junction.

© 2008 Pearson Education, Inc.

The energy diagram for the n-region shows a lower

these electrons, so they are further away

A diode is a semiconductor device with a single pn

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Forward bias is the condition which allows current in

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Expanded view of a portion of the V-I characteristic curve for

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Reverse bias is the condition in which current is

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Temperature effect on the

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Three diode approximations are:

Ideal Practical Complete

In addition, the complete model includes the effect of a large reverse

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Typical diode packages

Some common configurations are

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

The diode conducts Vin + I

during the positive 0

What is the output if the diode is reversed? See next slide…

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

What is the output if the diode is reversed?

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

What is the average value of the half-

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Forward Voltage (VF) and Reverse Voltage (VR)

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Half-wave Rectifier Example

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.

Half-wave Rectifier Example

ELECTRÓNICA I – Sist. Eléctricos y Automatización © 2008 Pearson Education, Inc.