IRF840LC, SiHF840LC

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY • Ultra Low Gate Charge
VDS (V) 500 • Reduced Gate Drive Requirement Available

RDS(on) (Ω) VGS = 10 V 0.85 • Enhanced 30 V VGS Rating RoHS*

• Reduced Ciss, Coss, Crss COMPLIANT
Qg (Max.) (nC) 39
Qgs (nC) 10 • Extremely High Frequency Operation
• Repetitive Avalanche Rated
Qgd (nC) 19
• Compliant to RoHS Directive 2002/95/EC
Configuration Single
DESCRIPTION
D
This new series of low charge Power MOSFETs achieve
TO-220AB signiticantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
G
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
S frequency applications. Frequencies of a few MHz at high
D
G S current are possible using the new low charge MOSFETs.
N-Channel MOSFET These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.

ORDERING INFORMATION
Package TO-220AB
IRF840LCPbF
Lead (Pb)-free
SiHF840LC-E3
IRF840LC
SnPb
SiHF840LC

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 30
TC = 25 °C 8.0
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 5.1 A
Pulsed Drain Currenta IDM 28
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840LC, SiHF840LC
Vishay Siliconix

THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 400V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 Ab - - 0.85 Ω
Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab 4.0 - - S
Dynamic
Input Capacitance Ciss - 1100 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 170 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 18 -
Total Gate Charge Qg - - 39
ID = 8.0 A, VDS = 400 V
Gate-Source Charge Qgs VGS = 10 V - - 10 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 19
Turn-On Delay Time td(on) - 12 -
Rise Time tr VDD = 250 V, ID = 8.0 A, - 25 -
Rg = 9.1 Ω, RD= 30 Ω ns
Turn-Off Delay Time td(off) - 27 -
see fig. 10b
Fall Time tf - 19 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 8.0
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S - - 28

Body Diode Voltage VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 8.0 A, - 490 740 ns
Body Diode Reverse Recovery Charge Qrr dI/dt = 100 A/μsb - 3.0 4.5 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91067

2 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF840LC, SiHF840LC
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
Top 15 V
101 10 V
8.0 V 101

ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
6.0 V 150 °C
5.5 V
5.0 V
Bottom 4.5 V 25 °C
100

100
4.5 V

10-1 20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = 50 V

10-1 100 101 4 5 6 7 8 9 10

91067_01 VDS, Drain-to-Source Voltage (V) 91067_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C RDS(on), Drain-to-Source On Resistance Fig. 3 - Typical Transfer Characteristics

3.0
VGS ID = 8.0 A
101 Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
2.0
(Normalized)

6.0 V
5.5 V 4.5 V

100 5.0 V 1.5

Bottom 4.5 V

1.0

0.5
10-1 20 µs Pulse Width
TC = 150 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91067_02 VDS, Drain-to-Source Voltage (V) 91067_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91067 www.vishay.com

S11-0506-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840LC, SiHF840LC
Vishay Siliconix

2400
VGS = 0 V, f = 1 MHz

ISD, Reverse Drain Current (A)

Ciss = Cgs + Cgd, Cds Shorted
2000 Crss = Cgd
Coss = Cds + Cgd
150 °C
Capacitance (pF)

1600 101
Ciss
1200

800 Coss 25 °C

400 Crss
100 VGS = 0 V
0
100 101 0.6 0.8 1.0 1.2 1.4 1.6

91067_05 VDS, Drain-to-Source Voltage (V) 91067_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 8.0 A Operation in this area limited
5
VGS, Gate-to-Source Voltage (V)

by RDS(on)
VDS = 400 V 2
16
ID, Drain Current (A)

102
VDS = 250 V
5

12 VDS = 100 V
2 10 µs
10
100 µs
5
8
2 1 ms
1
4 10 ms
5 TC = 25 °C
For test circuit 2
TJ = 150 °C
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5
0 8 16 24 32 40 48 1 10 102 103

91067_06 QG, Total Gate Charge (nC) 91067_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91067

4 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF840LC, SiHF840LC
Vishay Siliconix

RD
VDS

VGS
8.0 D.U.T.
RG
+
- VDD
ID, Drain Current (A)

6.0 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

4.0
Fig. 10a - Switching Time Test Circuit

2.0
VDS
90 %
0.0
25 50 75 100 125 150

91067_09 TC, Case Temperature (°C)

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
D = 0.5
PDM
0.2

0.1 0.1 t1
0.05 t2
0.02 Notes:
0.01 Single Pulse 1. Duty Factor, D = t1/t2
(Thermal Response) 2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91067_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91067 www.vishay.com

S11-0506-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840LC, SiHF840LC
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
RG D.U.T. +
V DD
- VDS
IAS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

1200
ID
EAS, Single Pulse Energy (mJ)

Top 3.6 A
1000 5.1 A
Bottom 8.0 A
800

600

400

200

VDD = 50 V
0
25 50 75 100 125 150

91067_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91067

6 S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF840LC, SiHF840LC
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91067.

Document Number: 91067 www.vishay.com

S11-0506-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS INCHES
A
E DIM. MIN. MAX. MIN. MAX.
F
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
Q
H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
1 2 3 J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1)

L(1) 3.32 3.82 0.131 0.150

M* ØP 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
b(1) ECN: X12-0208-Rev. N, 08-Oct-12
L

DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
C
b
e
J(1)
e(1)

Revison: 08-Oct-12 1 Document Number: 71195

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12 1 Document Number: 91000