PD - 94382C

IRGB10B60KD
IRGS10B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGSL10B60KD
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. IC = 12A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA. G
• Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
E
n-channel VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

TO-220AB D2Pak TO-262

IRGB10B60KD IRGS10B60KD IRGSL10B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current 44 A
IF @ TC = 25°C Diode Continuous Forward Current 22
IF @ TC = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 44
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 156
W
PD @ TC = 100°C Maximum Power Dissipation 62
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.8
RθJC Junction-to-Case - Diode ––– ––– 3.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)‚ ––– ––– 40
Wt Weight ––– 1.44 ––– g

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 10A, VGE = 15V 5, 6,7
––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C 9,10,11
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance ––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 3.0 150 µA VGE = 0V, VCE = 600V
––– 300 700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.30 1.45 IC = 10A
8
––– 1.30 1.45 V IC = 10A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ.
Max. Units Conditions Ref.Fig.

Qg Total Gate Charge (turn-on) ––– 38––– IC = 10A

Qge Gate - Emitter Charge (turn-on) ––– 4.3
––– nC VCC = 400V CT1
Qgc Gate - Collector Charge (turn-on) ––– 16.3
––– VGE = 15V
Eon Turn-On Switching Loss ––– 140247 µJ IC = 10A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 250360 VGE = 15V,RG = 47Ω, L = 200µH
Etot Total Switching Loss ––– 390607 Ls = 150nH TJ = 25°C ƒ
td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V
tr Rise Time ––– 20 29 VGE = 15V, RG = 47Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 230262 ns Ls = 150nH, TJ = 25°C
tf Fall Time ––– 23 32
Eon Turn-On Switching Loss ––– 230340 IC = 10A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 350464 µJ VGE = 15V,RG = 47Ω, L = 200µH 13,15
Etot Total Switching Loss ––– 580804 Ls = 150nH TJ = 150°C ƒ WF1WF2

td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V 14, 16

tr Rise Time ––– 20 28 VGE = 15V, RG = 47Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 250274 ns Ls = 150nH, TJ = 150°C WF1
tf Fall Time ––– 26 34 WF2
Cies Input Capacitance ––– 620––– VGE = 0V
Coes Output Capacitance ––– 62––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 22––– f = 1.0MHz
TJ = 150°C, IC = 44A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
VCC = 500V, VGE = +15V to 0V,RG = 47Ω CT2
µs TJ = 150°C, Vp =600V,RG = 47Ω CT3
SCSOA Short Circuit Safe Operting Area 10 ––– –––
VCC = 360V, VGE = +15V to 0V WF4
17,18,19
Erec Reverse Recovery energy of the diode ––– 245 330 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 90 105 ns VCC = 400V, IF = 10A, L = 200µH 20, 21
Irr Diode Peak Reverse Recovery Current ––– 19 22 A VGE = 15V,RG = 47Ω, Ls = 150nH CT4,WF3

Note  to ƒ are on page 15

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 IRG/B/S/SL10B60KD

25 180

160
20
140

120
15

Ptot (W)
IC (A)

100

80
10
60

5 40

20
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

100 100

10 10 µs 10
IC (A)

20 µs
IC A)

1 100 µs
DC 1
1ms

0.1
0
1 10 100 1000 10000
10 100 1000
VCE (V)
VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V
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IRG/B/S/SL10B60KD
40 40

35 VGE = 18V 35 VGE = 18V

VGE = 15V VGE = 15V
30 VGE = 12V 30 VGE = 12V
VGE = 10V VGE = 10V
25 VGE = 8.0V 25 VGE = 8.0V
ICE (A)

ICE (A)
20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

40 40

35 VGE = 18V 35 -40°C

VGE = 15V 25°C
30 VGE = 12V 30 150°C
VGE = 10V
25 VGE = 8.0V 25
ICE (A)

IF (A)

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs tp = 80µs
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 IRG/B/S/SL10B60KD
20 20
18 18
16 16
14 14
12 ICE = 5.0A 12 ICE = 5.0A
VCE (V)

VCE (V)
10 ICE = 10A 10 ICE = 10A
ICE = 15A ICE = 15A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 80
18 T J = 25°C
70
16 T J = 150°C
60
14
12 50
ICE = 5.0A
VCE (V)

ICE (A)

10 ICE = 10A 40
ICE = 15A
8
30
6
20
4 T J = 150°C

2 10 T J = 25°C

0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 150°C VCE = 50V; tp = 10µs
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IRG/B/S/SL10B60KD
800 1000

700
tdOFF
600

Swiching Time (ns)

500 EOFF
Energy (µJ)

400 100

300
EON tdON
200

100 tF

tR
0
10
0 5 10 15 20 25
0 5 10 15 20 25
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V RG= 47Ω; VGE= 15V

500 1000

450 EOFF
tdOFF
400

350
Swiching Time (ns)
Energy (µJ)

300
EON
250 100

200
tdON
150
tR
100
tF
50

0 10
0 50 100 150 0 50 100 150
R G (Ω) RG (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V ICE= 10A; VGE= 15V
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 IRG/B/S/SL10B60KD
25 25
RG = 10 Ω

20 RG = 22 Ω 20

RG = 47 Ω
15 15

IRR (A)
IRR (A)

10 RG = 100 Ω 10

5 5

0 0
0 5 10 15 20 25 0 50 100 150

IF (A) RG (Ω)

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 10A

25 1200
10Ω
1100 22Ω
20
1000
47Ω
900
Q RR (µC)

15 100 Ω
IRR (A)

800
20A
10 700
10A
600
5 5.0A
500

400
0
0 500 1000 1500
0 500 1000 1500
diF /dt (A/µs)
diF /dt (A/µs)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 10A; TJ = 150°C
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IRG/B/S/SL10B60KD
450

400
10Ω
350
22 Ω
300
Energy (µJ)

250
47 Ω
200
100 Ω
150

100

50

0
0 5 10 15 20 25

IF (A)

Fig. 21 - Typical Diode ERR vs. IF

TJ = 150°C

1000 16
Cies
14
300V
12
400V
Capacitance (pF)

10
VGE (V)

8
100 Coes
6

Cres 4

0
10
0 10 20 30 40
1 10 100
Q G , Total Gate Charge (nC)
VCE (V)

Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 10A; L = 600µH
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 IRG/B/S/SL10B60KD
1

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
τi (sec)
R1 R2 R3
R1 R2 R3 Ri (°C/W)
0.05 τJ τC
τJ τ
0.285 0.000134
0.01 τ1 τ2 τ3
τ1 τ2 τ3 0.241 0.000565
0.02
Ci= τi/Ri 0.288 0.0083
0.01 Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50
Thermal Response ( Z thJC )

1
0.20
0.10
Ri (°C/W) τi (sec)
R1 R2 R3
0.05 R1 R2 R3
τJ τC
0.1 0.01 τJ τ
0.846 0.000149
0.02 τ1 τ2 τ3
τ1 τ2 τ3 1.830 0.001575
Ci= τi/Ri 1.143 0.027005
Ci i/Ri
0.01 SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRG/B/S/SL10B60KD
L

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

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 IRG/B/S/SL10B60KD
600 12 600 30

500 10 500 25

400 8 400 20
90% ICE
TEST CURRENT
300 6 300 15

VCE (V)
V CE (V)

I CE (A)
ICE (A)
tf
90% test current
200 4 200 10
10% test current
5% V CE
tr 5% V CE
100 5% ICE 2 100 5

0 0 0 0
Eon Loss
Eoff Loss
-100 -2 -100 -5
-0.20 0.00 0.20 0.40 0.60 0.80 15.90 16.00 16.10 16.20
time(µs) time (µs)

Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4

100 15 400 100

QR R V CE
0 10 350

tR R
300
-100 5
ICE
250
-200 0
V CE (V)

ICE (A)
VF (V)

IF (A)

200 50
-300 10% -5
Peak 150
Peak
IRR
-400 IRR -10
100

-500 -15 50

-600 -20 0 0
-0.15 -0.05 0.05 0.15 0.25 -5.00 0.00 5.00 10.00 15.00
time (µS) time (µS)

Fig. WF3- Typ. Diode Recovery Waveform Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3
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IRG/B/S/SL10B60KD

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
LEAD ASSIGNMENTS
15.24 (.600)
14.84 (.584) HEXFET IGBTs, CoPACK

1.15 (.045) LEAD ASSIGNMENTS

1- GATE 1- GATE
MIN 2- COLLECTOR
2- DRAIN1 - GATE
1 2 3 3- SOURCE 3- EMITTER
2 - DRAIN
4- COLLECTOR
4- DRAIN3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010 PART NUMBER

LOT CODE 1789 INTERNAT IONAL
ASS EMBLED ON WW 19, 1997 RECT IFIER
LOGO
IN THE AS S EMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
AS S EMBLY
LOT CODE WEEK 19
LINE C

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 IRG/B/S/SL10B60KD
D2Pak Package Outline

D2Pak Part Marking Information

THIS IS AN IRF530S WITH PART NUMBER
LOT CODE 8024 INTERNATIONAL
AS S EMBLED ON WW 02, 2000 RECTIFIER F530S
IN T HE AS SEMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEEK 02
LINE L
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IRG/B/S/SL10B60KD
TO-262 Package Outline

IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

TO-262 Part Marking Information

EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNATIONAL
ASS EMBLED ON WW 19, 1997
RECTIFIER
IN THE ASS EMBLY LINE "C" LOGO
DATE CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

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 IRG/B/S/SL10B60KD
D2Pak Tape & Reel Information
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 This is only applied to TO-220AB package
‚ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery.

TO-220 package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/02
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