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2 mark:
2.Explain in detail about the working of bipolar SRAM and DRAM cell with neat
sketches.(Apr/May 2018)
(or)
Differentiate static and dynamic RAM. Draw the circuit of one cell of each and explain its
working.(Nov/Dec 2018)
3.Illustrate the circuit operation and characteristics of TTL NAND logic gate in detail(Nov/Dec
2018)
(or)
F1(x,y,z)=m(1,2,4,6)
F2(x,y,z)= m(0,1,6,7)
F3(x,y,z)= m(2,6)
(or)
6.Give the comparison between PROM,PAL and PLA with respect to various performance
feature.(Nov/Dec 2016)
7.Using PLA with 3 inputs,4 AND terms and 2 outputs to implement the following two Boolean
functions(Nov/Dec 2014)
F1(a,b,c)=m(3,5,6,7)
F2(a,b,c)= m(1,2,3,4)
9.Obtain the programming table for the SUM output of the Full Adder to implement with
PLA.(Nov/Dec2018)
10.List the CMOS characteristics. Draw the circuit diagram of basic CMOS inverter and explain
the operation
UNIT III
2 mark:
13 mark:
1.Explain in detail about the ring counter with its logic diagram,state diagram and its sequence
table(Apr/May 2018)
b)Explain the operation of master slave flipflop and show how race condition is
eliminated.(Nov/Dec 2018)
6.Using D Flip flop, design a synchronous counter which counts in the sequence
000,001,010,011,100,110,111,000. (Apr/May 2015)
7.Draw and explain 4 bit shift SISO,SIPO,PISO and PIPO with its waveform(May/June 2016)
8.Design a synchronous sequential circuit using JK Flipflop to generate the following sequence
and repeat 0,1,2,4,5,6(Apr/May 2010)
9.Discuss the working of 4 bit Johnson counter with a neat diagram.(Apr/May 2015)
10.Design a serial 2’s complement circuit with a shift register and a flipflop.The binary number
is shifted out from one side and its 2’s complement shifted into other side of the shift
register.(Nov/Dec 2017)