1. At room temperature the current in an A.

Zener diode
intrinsic semiconductor is due to
A. holes B. Tunnel diode

B. electrons C. Schottky diode

C. ions D. PIN diode

Answer: Option C
D. holes and electrons Explanation:
Answer: Option D
Explanation: In schottky diode there is no charge
storage and hence almost zero reverse
Intrinsic material has equal number of recovery time.
holes and electrons.

5. A transistor has a current gain of 0.99 in

2. Work function is the maximum energy the CB mode. Its current gain in the CC
required by the fastest electron at 0 K to mode is
escape from the metal surface.
A. 100
A. True
B. 99
B. False
C. 1.01
Answer: Option B
Explanation: D. 0.99
Work function is the minimum energy Answer: Option A
required by the fastest electron at 0 K to Explanation:
escape from the metal surface.

Current
gain = 1 + β = 100.
3. The most commonly used semiconductor
material is
A. silicon 6. In p-n-p transistor the current IE has two
components viz. IEP due to injection of
B. germanium holes from p-region to n-region and IE due
to injection of electrons from n-region to p-
C. mixture of silicon and germanium region. Then

D. none of the above A. IEp and IEn are almost equal

Answer: Option A B. IEp >> IEn

Explanation:
C. IEn >> IEp
Germanium is rarely used.
D. either (a) or (c)
Answer: Option B
Explanation:
4. In which of these is reverse recovery time Emitter is p-type in p-n-p transistor.
nearly zero? Therefore holes are majority carriers.

7. In an n channel JFET, the gate is
A. n type
B. p type
C. either n or p
D. partially n & partially p
Answer: Option B
Explanation:
Since channel is n type gate must
be p type.
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8. The amount of photoelectric emission
current depends on
A. frequency of incident radiation
B. intensity of incident radiation
both frequency and intensity of
C.
incident radiation
D. none of the above
Answer: Option B
Explanation:
Only the intensity of incident radiation
governs the amount of photoelectric
emission.
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9. Assertion (A): A p-n junction has high
resistance in reverse direction.
Reason (R): When a reverse bias is
applied to p-n junction, the width of
depletion layer increases.
Both A and R are true and R is
A.
correct explanation of A
Both A and R are true but R is not
B.
a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A
Explanation:
The increase in reverse resistance is due
to widening of depletion layer.
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10. In the circuit of figure the function of
resistor R and diode D are
to limit the current and to protect
A.
LED against over voltage
to limit the voltage and to protect
B.
LED against over current
to limit the current and protect LED
C. against reverse breakdown
voltage.
D. none of the above.
Answer: Option C
Explanation:
Resistance limits current and diode is
reverse connected and therefore protects
LED against reverse breakdown.
11. At very high temperatures the extrinsic
semi conductors become intrinsic
because
drive in diffusion of dopants and
A.
carriers
band to band transition dominants
B.
over impurity ionization
 impurity ionization dominants over
C.
band to band transition
band to band transition is balanced
D.
by impurity ionization
Answer: Option B
Explanation:
Covalent bonds are broken.
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12. When a voltage is applied to a
semiconductor crystal then the free
electrons will flow.
A. towards positive terminal
B. towards negative terminal
either towards positive terminal or
C.
negative terminal
towards positive terminal for 1 μs
D. and towards negative terminal for
next 1 μs
Answer: Option A
Explanation:
Since electrons are negatively charged
they will flow towards positive terminal.
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13. Ferrite have
A. low copper loss
B. low eddy current loss
C. low resistivity
higher specific gravity compared to
D.
iron
Answer: Option C
Explanation:
Ferrite is a low density material of
composition with Fe2O3 x O, where x is a
bivalent metal, such as Cobart, Ni, Mn.
These magnetic materials having very low
loss of current and used in high frequency
circuit.
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14. In a p type material the Fermi level is 0.3
eV above valence band. The
concentration of acceptor atoms is
increased. The new position of Fermi level
is likely to be
A. 0.5 eV above valence band
B. 0.28 eV above valence band
C. 0.1 eV above valence band
D. below the valence band
Answer: Option B
Explanation:
Addition of acceptor atom brings Fermi
level closer to valence band.
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15. In an n-p-n transistor, the majority carriers
in the base are
A. electrons
B. holes
C. both holes and electrons
D. either holes or electrons
Answer: Option A
Explanation:
Emitter is n type and emits electrons
which diffuse through the base.
16. An LED has a rating of 2 V and 10 mA. It
is used along with 6V battery. The range
of series resistance is
A. 0 to 200 Ω
B. 200 - 400 Ω
C. 200 Ω and above
 D. 400 Ω and above 19. A silicon (PN) junction at a temperature of
20°C has a reverse saturation current of
Answer: Option D 10 pico Ampere. The reverse saturation
Explanation: current at 40°C for the same bias is
approximately.
A. 30 pA
R= = 400Ω.
R must be at least 400Ω so that current in B. 40 pA
LED does not exceed 10 mA.
View Answer Discuss in C. 50 pA
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D. 60 pA
Answer: Option B
Explanation:
17. The number of doped regions in PIN
diode is By increasing of temperature by 10°C,
Io become double so by increasing
A. 1 temperature 20°C, Io become 4 time than
initial value... and it is 40 PA.
B. 2 View Answer Discuss in
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C. 3

D. 1 or 2
20. In a bipolar transistor the barrier potential
Answer: Option B
Explanation: A. 0
A PIN diode has p and n doped regions
separated by intrinsic layer. B. a total of 0.7 V
View Answer Discuss in
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D. 0.35 V
Answer: Option C
18. A transistor has two p-n junctions. The
Explanation:
batteries should be connected such that
Since there are two p-n junctions, there
A. both junctions are forward biased are two depletion layers and 0.7 V across
each layer.
B. both junctions are reverse biased
21. Recombination produces new electron-
one junction is forward biased and hole pairs
C.
the other is reverse biased
A. True
D. none of the above
B. False
Answer: Option C
Explanation: Answer: Option B
Explanation:
Emitter-base junction is forward biased
and base collector junction is reverse Due to recombination the number of
biased. electron-hole pairs is reduced.

View Answer Discuss in View Answer Discuss in

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22. An amplifier without feedback has a
voltage gain of 50, input resistance of 1
kΩ and output resistance of 2.5 kΩ. The
input resistance of the current shunt -
ve feedback amplifier using the above
amplifier with a feedback factor of 0.2 is
A. 1/11 kΩ
B. 1/5 kΩ
C. 5 kW
Both A and R are true but R is not
B.
a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A
Explanation:
Avalanche breakdown occurs at high
reverse voltage.

D. 11 kW View Answer Discuss in

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Answer: Option A
Explanation:
Input Resistance with feedback for current 25. As compared to an ordinary
semiconductor diode, a Schottky diode
has higher reverse saturation
shunt, . A.
current
View Answer Discuss in
Forum Workspace Report has higher reverse saturation
B.
current and higher cut in voltage

has higher reverse saturation

23. As compared to an ordinary C.
current and lower cut in voltage
semiconductor diode, a Schottky diode
A. has lower cut in voltage has lower reverse saturation
D.
current and lower cut in voltage
B. has higher cut in voltage Answer: Option C
Explanation:
C. lower reverse saturation current
This is due to high electron concentration
D. both (b) and (c) in metals.
Answer: Option A
Explanation:
Cut in voltage in Schottky diode is about 26 Crossover distortion behaviour is
0.3 V as compared to 0.7 V in ordinary . characteristic of
semiconductor diode. A. class A O/P stage
View Answer Discuss in B. class B O/P stage
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C. class AB output stage

24. Assertion (A): When a high reverse D. common pulse O/P state
voltage is applied to a p-n junction the Answer: Option B
diode breaks down. Explanation:
Reason (R): High reverse voltage causes
Avalanche effect. It is a characteristics of class B output
stage as the amplifier is biased in cut-off
Both A and R are true and R is region.
A.
correct explanation of A
 In class B amplifier, two transistor are C. A is true but R is false
operated in such a way that one is amplify
the half cycle and second is amplify -ve half D. A is false but R is true
cycle.
Answer: Option B
Explanation:
A refers to type semiconductor while R
refers to n type semiconductor. Both A
and R are correct but independent.
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29. In an n-p-n transistor biased for operation

in forward active region
emitter is positive with respect to
A.
View Answer Discuss in base
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collector is positive with respect to
B.
base
27. If ac for transistor is 0.98 then βac is equal base is positive with respect to
to C. emitter and collector is positive with
A. 51 respect to base

B. 49 D. none of the above

Answer: Option C
C. 47 Explanation:
D. 45 In forward active mode emitter base
Answer: Option B junction is forward biased and base
Explanation: collector junction is reverse biased.
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.
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30. An increase in temperature increases the
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width of depletion layer.
A. True
28. Assertion (A): The conductivity of p type B. False
semiconductor is higher than that of
intrinsic semiconductor. Answer: Option B
Reason (R): The addition of donor Explanation:
impurity creates additional energy levels
With increase in temperature width of
below conduction band.
depletion layer decreases.
Both A and R are true and R is
A.
correct explanation of A

Both A and R are true but R is not A zener diode is used in

B.
a correct explanation of A
 A. voltage regulator circuit sharp breakdown occurs at a
B.
certain reverse voltage
B. amplifier circuits
C. the ratio v-i can be negative
both voltage regulator and amplifier
C.
circuit D. there are two p-n junctions

31. D. none of the above Answer: Option B

Explanation:
Answer: Option A When reverse voltage equals breakdown
Explanation: value it starts conducting and voltage
does not increase further.
Zener diode is used only in voltage
regulator circuits. View Answer Discuss in
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View Answer Discuss in
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34. In a bipolar transistor which current is

largest
32. A particular green LED emits light of
wavelength 5490, Å, the energy bandgap A. collector current
of the semiconductor material used there
is .. h = 6.6 x 10-34 J sec.
B. base current
A. 2.26 eV
C. emitter current
B. 1.98 eV
D. base current or emitter current
C. 1.17 eV
Answer: Option C
D. 0.74 eV Explanation:
Emitter current is larger, collector current
Answer: Option A is slightly less than emitter current and
Explanation: base current is very small.
View Answer Discuss in
From Plank equation joule Forum Workspace Report

to convert it into electron volt it will be

divided by 1.6 x 10-19.
View Answer Discuss in 35. The v-i characteristics of a FET is shown
Forum Workspace Report in figure. In which region is the device

33. In a zener diode

A. the forward current is very high
 biased for small signal amplification is at the centre in between valence
C.
and conduction bands

D. is very near valence band

Answer: Option B
Explanation:
This is due to high level of doping.
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A. AB

B. BC 38. The types of carriers in a semiconductor

are
C. CD A. 1

D. BD B. 2

Answer: Option B
Explanation: C. 3

Small signal amplifier operation is in

constant current region of characteristics. D. 4

Answer: Option B
Explanation:
36. Secondary emission is always
decremental. Holes and electrons.
A. True View Answer Discuss in
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B. False

Answer: Option B
Explanation: 39. A potential of 7 V is applied to a silicon
diode. A resistance of 1 K ohm is also in
Sometimes it can be useful also. series with the diode. The current is
A. 7 mA

37. In a degenerate n type semiconductor B. 6.3 mA

material, the Fermi level,
A. is in valence band C. 0.7 mA

B. is in conduction band D. 0

Answer: Option B
Explanation:
 51. = 42.53
View Answer Discuss in ΔIC = (SICO).ΔICO
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= 42.53 x 19.9 nA
= 0.85 μA.

40. Assertion (A): The reverse saturation View Answer Discuss in

current in a semiconductor diode is 4nA at Forum Workspace Report
20°C and 32 nA at 50°C.
Reason (R): The reverse saturation
current in a semiconductor diode doubles
for every 10°C rise in temperature. 4 A periodic voltage has following value for
Both A and R are true and R is 2. equal time intervals changing suddenly from
A. one value to next... 0, 5, 10, 20, 50, 60, 50,
correct explanation of A
20, 10, 5, 0, -5, -10 etc. Then rms value of
the waveform is
Both A and R are true but R is not A. 31 V
B.
a correct explanation of A

B. 32 V
C. A is true but R is false

C. insufficient data
D. A is false but R is true

Answer: Option A D. none of these

Explanation:
At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, Answer: Option A
16 nA, at 50°C, 32 nA. Explanation:

41. Calculate the stability factor and change

in IC from 25°C to 100°C for, β = 50, RB/
RE = 250, ΔIC0 = 19.9 nA for emitter bias RMS value = 965 = 31.064 Volt.
configuration. View Answer Discuss in
A. 42.53, 0.85 μA Forum Workspace Report

B. 40.91, 0.58 μA
43. Work function of oxide coated cathode is
C. 40.91, 0.58 μA much lower than that of tungsten cathode.
A. True
D. 41.10, 0.39 μA
B. False
Answer: Option A
Explanation: Answer: Option A
Explanation:
SICO = (1 + β).
 Therefore emission current from oxide low forward and high reverse
A.
coated cathode is more. resistance
View Answer Discuss in
Forum Workspace Report B. a non-linear v-i characteristics

zero forward current till the forward

C.
voltage reaches cut in value
44. The word enhancement mode is 46.
associated with
D. all of the above
A. tunnel diode
Answer: Option D
B. MOSFET Explanation:
A p-n Junction has all these features.
View Answer Discuss in
C. JFET
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D. photo diode

Answer: Option B 47. Which of the following is true as regards

Explanation: photo emission?
MOSFET may be depletion mode or Velocity of emitted electrons is
A.
enhancement mode. dependent on light intensity

View Answer Discuss in

Forum Workspace Report Rate of photo emission is inversely
B.
proportional to light intensity

Maximum velocity of electron

45. In which region of a CE bipolar transistor C. increases with decreasing wave
is collector current almost constant? length
A. Saturation region
Both holes and electrons are
D.
B. Active region produced

C. Breakdown region Answer: Option C

Explanation:

D. Both saturation and active region As wavelength decreases, frequency

increases and maximum velocity of
electron increases.
Answer: Option B
Explanation: View Answer Discuss in
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It is used as amplifier when it operates in
this region.

48. The power dissipation in a transistor is the

A p-n junction diode has product of
 emitter current and emitter to base B. 0.01 cm
A.
voltage
C. 0.0141 cm
emitter current and collector to
B.
emitter voltage
D. 1 cm

collector current and collector to Answer: Option A

C.
emitter voltage Explanation:

D. none of the above Diffusion length = .

Answer: Option C
Explanation: 1. An incremental model of a solid state
device is one which represents the
Maximum power dissipation occurs at
collector junction. ac property of the device at desired
A.
operating point
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dc property of the device at all
B.
operating points

49. The normal operation of JFET is complete ac and dc behaviour at all

C.
A. constant voltage region operating points

B. constant current region ac property of the device at all

D.
operating points
both constant voltage and constant
C. Answer: Option A
current regions
Explanation:
Incremental model is used for ac
either constant voltage or constant
D. response at one operating point.
current region
View Answer Discuss in
Answer: Option B Forum Workspace Report
Explanation:
In major portion of drain characteristics
ID is constant.
View Answer Discuss in 2. What is the correct sequence of the
Forum Workspace Report following step in the fabrication of a
monolithic, Bipolar junction transistor?
1. Emitter diffusion
50. The minority carrier life time and diffusion 2. Base diffusion
constant in a semiconductor material are
respectively 100 microsecond and 100 3. Buried layer formation
cm2/sec. The diffusion length is 4. E pi-layer formation
A. 0.1 cm
 Select the correct answer using the codes B. PIN diode
given below:

A. 3, 4, 1, 2 C. Tunnel diode

B. 4, 3, 1, 2 D. UJT

C. 3, 4, 2, 1
D. 4, 3, 2, 1
Answer: Option D
Explanation:
It is always non-linear.
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3. For an n-channel enhancement type
MOSFET, if the source is connected at a
higher potential than that of the bulk
(VSB > 0), the threshold voltage VT of the
MOSFET will
Answer: Option D
Explanation:
Its output is used to trigger SCR.
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5. Calculate the resistivity of n-type
semiconductor from the following data,
Density of holes = 5 x 1012 cm-3. Density of
electrons = 8 x 1013 cm-3, mobility of
conduction electron = 2.3 x 104 cm2/ V-sec
and mobility of holes = 100 cm2/V-sec.
A. 0.43 Ω-m
B. 0.34 Ω-m

A. remain unchanged
C. 0.42 Ω-m

B. decrease
D. 0.24 Ω-m

C. change Polarity Answer: Option B

Explanation:
D. increase
Resistivity() = .
Answer: Option A σ = e(neue + nnun).
Explanation:
VT depends upon MOSFET construction,
hence it will Independent from MOSFET 6. An one sided abrupt junction has
parameters. 1021/m3 of dopants on the lightly doped
View Answer Discuss in side, zero bias voltage and a built-in
Forum Workspace Report potential of 0.2 V. The depletion width of
abrupt junction.(q = 1.6 x 10-19 C, εr =16,
ε0 = 8.87 x 10-12 F/m) is
A. 0.036 nm
4. Which of the following is used for
generating time varying wave forms?
B. 0.6 μm
A. MOSFET
 C. 3 mm the gap between valence and
D.
conduction bands is small
D. 1.5 mm
Answer: Option A
Explanation:
Answer: Option B
Explanation: In all metals conductivity decreases (and
resistance increases) with increase in
temperature.
. View Answer Discuss in
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View Answer Discuss in
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9. The voltage across a zener diode

7. n-type semiconductors A. is constant in forward direction
A. are negatively charged
B. is constant in reverse direction
are produced when indium is
B. is constant in both forward and
added as impurity to germanium C.
reverse directions
are produced when phosphorus is
C. D. none of the above
added as impurity to silicon

Answer: Option B
D. none of the above Explanation:

Answer: Option C Zener diode is always reverse biased.

Explanation:
View Answer Discuss in
n type semiconductor is produced when
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pentavalent impurity is added.
View Answer Discuss in
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10. Assertion (A): Two transistors one n-p-
n and the other p-n-p are identical in all
respects (doping, construction, shape,
8. In all metals
size). The n-p-n transistor will have better
conductivity decreases with frequency response.
A.
increase in temperature Reason (R): The electron mobility is
higher than hole mobility.
current flow by electrons as well as Both A and R are true and R is
B. A.
by holes correct explanation of A

resistivity decreases with increase Both A and R are true but R is not
C. B.
in temperature a correct explanation of A
 C. A is true but R is false View Answer Discuss in
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D. A is false but R is true

Answer: Option A 13. A Schottky diode clamp is used along with

Explanation: switching BJT for
Therefore mostly npn transistors are
A. reducing the power dissipation
used.

B. reducing the switching time

11. The threshold voltage of an n-channel
enhancement mode MOSFET is 0.5 when
the device is biased at a gate voltage of C. increasing the value of β
3V. Pinch off would occur at a drain
voltage of
D. reducing the base current
A. 1.5 V
View Answer Discuss in
B. 2.5 V Forum Workspace Report

C. 3.5 V
14 From the given circuit below, we can
D. 4.5 V . conclude that.

Answer: Option B
Explanation:
It is used with reverse bias.
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12. Which of these has

degenerate p and n materials?
A. BJT is pnp
A. Zener diode

B. BJT is npn
B. PIN diode

C. transistor is faulty
C. Tunnel diode

D. not possible to determined

D. Photo diode
Answer: Option C
Answer: Option C Explanation:
Explanation:
Tunnel diode has heavily According to figure, both the LED is
doped p and n layers called glowing, which indicate that circuit is
degenerate p and n materials.
 complete in both the half cycle of a.c. 17. If the reverse voltage across a p-
signal. n junction is increased three times, the
junction capacitance
Therefore Emitter and Base junction will
act as short circuit in both direction, which A. will decrease
indicate transistor is faulty.
View Answer Discuss in B. will increase
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will decrease by an approximate
C.
factor of about 2

15. In a piezoelectric crystal, applications of a

mechanical stress would produce will increase by an approximate
D.
factor of about 2
A. plastic deformation of the crystal
Answer: Option C
B. magnetic dipoles in the crystal Explanation:
Increase of reverse voltage widens the
C. electrical polarization in the crystal depletion layer and junction capacitance
decreases. However the decrease in
capacitance is not proportional to increase
D. shift in the Fermi level
in voltage.
Answer: Option C View Answer Discuss in
Explanation: Forum Workspace Report
In piezoelectric materials mechanical
stress produces electric polarization.
18. Which of these has highly
doped p and n region?
16. In which of the following is the width of
A. PIN diode
junction barrier very small?
A. Tunnel diode
B. Tunnel diode

B. Photo diode
C. Schottky diode

C. PIN diode
D. Photodiode

D. Schottky diode Answer: Option B

Explanation:
Answer: Option D Tunnel diode has heavily
Explanation: doped p and n regions leading to very thin
depletion layer.
Schottky diode has very small depletion View Answer Discuss in
layer.
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View Answer Discuss in
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19. Measurement of Hall coefficient enables
the determination of
A. recovery time of stored carrier

type of conductivity and

B.
concentration of charge carriers

temperature coefficient and thermal

C.
conductivity

Fermi level and forbidden energy

D.
gap

Answer: Option B
Explanation:
If a potential difference is developed
across a current carrying metal strip when
the strip is placed in transverse magnetic
field.
Hall effect is very weak in metals, but it is
large semiconductors.
View Answer Discuss in
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20. The units for transconductance are

A. ohms

B. amperes

C. volts

D. siemens

Answer: Option D
Explanation:
Its units are the same as the units of
conductance.