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PD - 96965A

PDP MOSFET IRFP4232PbF


Features
l Advanced process technology
Key Parameters
l Key parameters optimized for PDP Sustain & VDS min 250 V
Energy Recovery applications VDS (Avalanche) typ. 300 V
l Low EPULSE rating to reduce the power
RDS(ON) typ. @ 10V 30 m:
dissipation in Sustain & ER applications
l Low QG for fast response
EPULSE typ. 310 µJ
l High repetitive peak current capability for IRP max @ TC= 100°C 117 A
reliable operation TJ max 175 °C
l Short fall & rise times for fast switching

l175°C operating junction temperature for

improved ruggedness D
l Repetitive avalanche capability for robustness

and reliability
G

S TO-247AC

Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings


Parameter Max. Units
VGS Gate-to-Source Voltage ±20 V
VGS (TRANSIENT) Gate-to-Source Voltage ±30
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42
IDM Pulsed Drain Current c 240
IRP @ TC = 100°C Repetitive Peak Current g 117
PD @TC = 25°C Power Dissipation 430 W
PD @TC = 100°C Power Dissipation 210
Linear Derating Factor 2.9 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.35 °C/W

Notes  through … are on page 8


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IRFP4232PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 180 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 30 35.7 mΩ VGS = 10V, ID = 42A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -15 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 5.0 µA VDS = 200V, VGS = 0V
––– ––– 150 VDS = 200V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 95 ––– ––– S VDS = 25V, ID = 42A
Qg Total Gate Charge ––– 160 240 nC VDD = 125V, ID = 42A, VGS = 10V e
Qgd Gate-to-Drain Charge ––– 60 –––
td(on) Turn-On Delay Time ––– 37 ––– VDD = 125V, VGS = 10V e
tr Rise Time ––– 100 ––– ns ID = 42A
td(off) Turn-Off Delay Time ––– 64 ––– RG = 5.0Ω
tf Fall Time ––– 63 ––– See Fig. 22
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 200V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
––– 310 –––
EPULSE Energy per Pulse µJ VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
––– 950 –––
VDS = 200V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance ––– 7290 ––– VGS = 0V
Coss Output Capacitance ––– 610 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig.5
Coss eff. Effective Output Capacitance ––– 420 ––– VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance ––– 5.0 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 13 ––– from package
S
and center of die contact

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 220 mJ
EAR Repetitive Avalanche Energy c ––– 43 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 42 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 60 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 240 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 42A, VGS = 0V e
trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 42A, VDD = 50V
Qrr Reverse Recovery Charge ––– 1230 1850 nC di/dt = 100A/µs e

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IRFP4232PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)


8.0V 8.0V
BOTTOM 7.0V BOTTOM 7.0V

100 7.0V 100


7.0V

10 10

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH


Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 4.0

RDS(on) , Drain-to-Source On Resistance


ID = 42A
VGS = 10V
ID, Drain-to-Source Current(Α)

3.0
100
(Normalized)
TJ = 175°C

2.0

TJ = 25°C
10

1.0
VDS = 30V
≤ 60µs PULSE WIDTH
1
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

1200 1000

L = 220nH L = 220nH
C = 0.4µF C = Variable
1000 800
100°C 100°C
Energy per pulse (µJ)

25°C
Energy per pulse (µJ)

25°C

800 600

600 400

400 200

200 0
150 160 170 180 190 200 160 170 180 190 200 210 220 230

VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)

Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Peak Drain Current
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IRFP4232PbF
1600 1000.0
L = 220nH
1400

ISD, Reverse Drain Current (A)


C= 0.4µF
1200 100.0
C= 0.3µF
Energy per pulse (µJ)

TJ = 175°C
C= 0.2µF
1000

800 10.0

600

400 1.0 TJ = 25°C

200
VGS = 0V
0
0.1
25 50 75 100 125 150
0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

12000 20
VGS = 0V, f = 1 MHZ ID= 42A
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)


10000 Crss = Cgd VDS = 200V
16 VDS= 125V
Coss = Cds + Cgd
VDS= 50V
C, Capacitance (pF)

8000
Ciss
12

6000
8
4000

4
2000
Coss
Crss 0
0
1 10 100 1000
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

60 1000
OPERATION IN THIS AREA
54 LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

48
100
ID , Drain Current (A)

42 1µsec

36
10µsec
30 10
24 100µsec

18
1
12
Tc = 25°C
6 Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TC , CaseTemperature (°C) VDS , Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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IRFP4232PbF
1000
( Ω)
600

EAS, Single Pulse Avalanche Energy (mJ)


RDS (on), Drain-to -Source On Resistance m

ID = 42A I D
TOP 12A
500 800 18A
BOTTOM 42A

400
TJ = 25°C
600

300
TJ = 125°C
400
200

200
100

0 0
4.0 6.0 8.0 10.0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)

Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.5 200
ton= 1µs
VGS(th) Gate threshold Voltage (V)

5.0 Duty cycle = 0.25


160
Half Sine Wave

Repetitive Peak Current (A)


4.5 Square Pulse
ID = 250µA
4.0
120

3.5

3.0 80

2.5
40
2.0

1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ , Temperature ( °C ) Case Temperature (°C)

Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature

D = 0.50
Thermal Response ( ZthJC )

0.1
0.20
0.10
0.05 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01 0.02 τJ τC 0.0091 0.000003
τJ τ
0.01 τ1 0.0487 0.000071
τ2 τ3 τ4
τ1 τ2 τ3 τ4 0.1264 0.001743
Ci= τi/Ri 0.1660 0.024564
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case


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IRFP4232PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied


• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices


Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform

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IRFP4232PbF

Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

RD VDS
V DS
90%
VGS
D.U.T.
RG
+
-V DD
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf

Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms

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IRFP4232PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information


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TO-247AC package is not recommended for Surface Mount Application.


Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.25mH,
RG = 25Ω, IAS = 42A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
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