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TO-252
DPAK D
D
D
S G G
S
G S
AOD5T40P
Thermal Characteristics
Parameter Symbol Typical Maximum Units
Maximum Junction-to-Ambient A,D RθJA 45 55 °C/W
Maximum Case-to-sink A RθCS - 0.5 °C/W
Maximum Junction-to-CaseD,F RθJC 2 2.4 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
7.5 10
VDS=40V -55°C
10V
6
8V
4.5 125°C
ID(A)
7V
ID (A)
1
3
6.5V
25°C
1.5 VGS=5.5V 6V
0 0.1
0 5 10 15 20 25 30 4 6 8 10
5 3
2.5
Normalized On-Resistance
4
2
RDS(ON) (Ω)
VGS=10V
3 ID=1A
VGS=10V
1.5
2
1
1
0.5
0 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage
1.3 1E+02
1.2 1E+01
BVDSS (Normalized)
1.1 1E+00
125°C
IS (A)
1 1E-01
0.8 1E-03
0.7
1E-04
-100 -50 0 50 100 150 200
0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C)
VSD (Volts)
Figure 5: Break Down vs. Junction Temperature
Figure 6: Body-Diode Characteristics
15 1000
Ciss
VDS=320V
12 ID=3.9A
100
Capacitance (pF)
Coss
VGS (Volts)
9
10
6
Crss
1
3
0 0.1
0 2 4 6 8 10 0.1 1 10 100 1000
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
2 100
1.6
10
RDS(ON) 10µs
limited
1.2
Eoss(uJ)
ID (Amps)
100µs
Eoss 1
0.8 DC
1ms
0.1 10ms
0.4
TJ(Max)=150°C
TC=25°C
0 0.01
0 100 200 300 400 500 1 10 100 1000
60 5
48 4
Power Dissipation (W)
36 3
24 2
12 1
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
1000 500
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TA=25°C
800 400
Power (W)
Power (W)
600 300
400 200
200 100
0 0
0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
RθJC=2.4°C/W
1
Thermal Resistance
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
1
ZθJA Normalized Transient
Thermal Resistance
0.1
PD
0.01
Single Pulse Ton
T
0.001
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
ton toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds
D5T40P
Green product
NOTE:
LOGO - AOS Logo
D5T40P - Part number code
F - Fab code
A - Assembly location code
Y - Year code
W - Week code
L&T - Assembly lot code
S
Y
M
DIMENSION IN MILLIMETERS DIMENSIONS IN INCHES
B
O
L MIN. NOM. MAX. MIN. NOM. MAX.
A 2.184 2.286 2.388 0.086 0.090 0.094
A1 0.000 ----- 0.127 0.000 ----- 0.005
A2 0.889 1.041 1.143 0.035 0.041 0.045
b 0.635 0.762 0.889 0.025 0.030 0.035
RECOMMENDED LAND PATTERN b1 0.762 0.840 1.143 0.030 0.033 0.045
b2 4.953 5.340 5.461 0.195 0.210 0.215
c 0.450 0.508 0.610 0.018 0.020 0.024
6.25 MIN.
c1 0.450 0.508 0.610 0.018 0.020 0.024
D 5.969 6.096 6.223 0.235 0.240 0.245
D1 5.210 5.249 5.380 0.205 0.207 0.212
6.80 MIN.
D2 0.662 0.762 0.862 0.026 0.030 0.034
E 6.350 6.604 6.731 0.250 0.260 0.265
6.60 E1 4.318 4.826 4.901 0.170 0.190 0.193
1.50 MIN. E2 1.678 1.778 1.878 0.066 0.070 0.074
e 2.286 BSC 0.090 BSC
3.00 MIN.
e1 4.572 BSC 0.180 BSC
2.286 H 9.398 10.033 10.414 0.370 0.395 0.410
UNIT: mm
4.572 BSC L 1.270 1.520 2.032 0.050 0.060 0.080
L1 2.921 REF. 0.115REF.
NOTE L2 0.408 0.508 0.608 0.016 0.020 0.024
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND L3 0.889 1.016 1.270 0.035 0.040 0.050
GATE BURRS. MOLD FLASH SHOULD BE LESS THAN L4 0.635 ----- 1.016 0.025 ----- 0.040
6 MILS.
2. DIMENSION L IS MEASURED IN GAUGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. REFER TO JEDEC TO-252 (AA)
AOS Semiconductor
Product Reliability Report
AOD5T40P, rev B
1
This AOS product reliability report summarizes the qualification result for AOD5T40P.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOD5T40P passes
AOS quality and reliability requirements. The released product will be categorized by the process
family and be routine monitored for continuously improving the product quality.
Table of Contents:
I. Product Description
II. Package and Die information
III. Reliability Stress Test Summary and Results
IV. Reliability Evaluation
I. Product Description:
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
2
III. Reliability Stress Test Summary and Results
Total Number
Reference
Test Item Test Condition Time Point Sample of
Standard
Size Failures
Temp = 150°C , 168 / 500 /
HTGB Vgs=100% of Vgsmax 1000 hours
462 pcs 0 JESD22-A108
Power 15000
Tj = 100°C 693 pcs 0 AEC Q101
Cycling cycles
Note: The reliability data presents total of available generic data up to the published date.
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
2 9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 6.53
9
MTTF = 10 / FIT = 17473 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C
Af 259 87 32 13 5.64 2.59 1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K