FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /

Diodes UMN1N / UMP1N / UMN11N / UMP11N

Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N

!Applications !External dimensions (Units : mm)

Ultra high speed switching FMN1 / FMP1 UMN1N / UMP1N

2.9±0.2
+0.2
1.9±0.2 1.1 −0.1 2.0±0.2
1.3±0.1 0.9±0.1
0.95 0.95 0.8±0.1 0.65 0.65 0.7

!Features

1.25±0.1
2.1±0.1
0∼0.1
∗

2.8±0.2
∗

1.6 −0.1
0∼0.1

+0.2
1) A wide variety of configurations are available.

0.1Min.
+0.1
0.2 −0.05 0.15±0.05
(UMD5, UMD6, SMD5, SMD6) +0.1 +0.1

0.3∼0.6
0.3 −0.05 0.15 −0.06
(All leads have the same dimensions.)
2) Multiple diodes in one small surface mount package. (All leads have the same dimensions.)

∗Marking ∗Marking
3) Diode characteristics are matched in the package. ROHM : SMD5
EIAJ : SC-74A FMN1 : N1
ROHM : UMD5
EIAJ : SC-88A UMN1N : N1
JEDEC : − FMP1 : P1 JEDEC : SOT-353 UMP1N : P1

IMN10 / IMN11 / IMP11 UMN11N / UMP11N

2.9±0.2
+0.2

!Construction 1.9±0.2 1.1 −0.1

2.0±0.2
0.95 0.95 0.8±0.1 1.3±0.1 0.9±0.1

Silicon epitaxial planar 0.65 0.65 0.7

1.25±0.1
2.1±0.1
2.8±0.2

0∼0.1
∗ ∗
1.6 −0.1

0∼0.1
+0.2

0.1Min.
+0.1
0.2 −0.05 0.15±0.05
+0.1 +0.1
0.3∼0.6

0.3 −0.05 0.15 −0.06

(All leads have the same dimensions.)
(All leads have the same dimensions.)

ROHM : SMD6 ∗Marking ROHM : UMD6 ∗Marking

EIAJ : SC-74 IMN10 : N10 EIAJ : SC-88 UMN11N : N11
JEDEC : SOT-457 IMN11 : N11 JEDEC : SOT-363 UMP11N : P11
IMP11 : P11

!Circuit

FMN1 FMP1 IMN10 IMN11 IMP11

SMD5 / SMD6 Package

UMN1N UMP1N UMN11N UMP11N

UMD5 / UMD6 Package

 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
!Absolute maximum ratings (Ta=25°C)
Peak DC Peak Mean Surge Power
current dissipation Junction Storage
reverse reverse forward rectifying
Type voltage voltage current temperature temperature
current (1µs) (TOTAL)
VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Tj (˚C) Tstg (˚C)
Pd (mW)
FMN1
80 80 80 25 0.25 150/80 150 −55∼+150
UMN1N
FMP1
80 80 80 25 0.25 150/80 150 −55∼+150
UMP1N
IMN10 80 80 300 100 4 300 ∗1 150 −55∼+150
IMN11 80 80 300 100 4 150 ∗2 150 −55∼+150
UMN11N
IMP11
80 80 300 100 4 150 ∗2 150 −55∼+150
UMP11N
∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.

!Electrical characteristics (Ta=25°C)

Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Type VF (V) Cond. IR (µA) Cond. CT (pF) Cond. trr (ns) Cond.
Max. IF (mA) Max. VR (V) Max. VR (V) f (MHz) Max. VR (V) IF (mA)
FMN1
0.9 5 0.1 70 3.5 6 1 4 6 5
UMN1N
FMP1
0.9 5 0.1 70 3.5 6 1 4 6 5
UMP1N
IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5
IMN11
1.2 100 0.1 70 3.5 6 1 4 6 5
UMN11N
IMP11
1.2 100 0.1 70 3.5 6 1 4 6 5
UMP11N

!Electrical characteristic curves (Ta=25°C)

125 50 1 000
Ta=100˚C
POWER DISSIPATION : Pd / PdMax. (%)

20
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

100 100 75˚C

10

5 50˚C
75 10
25˚C
2
0˚C
50 1 1.0
−25˚C
0.5 Ta=25˚C
25 0.1
−30˚C
85˚C
50˚C

0.2
0˚C

0 0.1 0.01
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
AMBIENT TEMPERATURE : Ta (˚C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V)

Fig.1 Power reduction curve Fig. 2 Forward current vs. Fig.3 Reverse current vs.
forward voltage reverse voltage
(P Type) (P Type)
 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
50 1 000

CAPACITANCE BETWEEN TERMINALS : CT (pF)

Ta=25˚C
Ta=100˚C
f=1MHz
20
FORWARD CURRENT : IF (mA)

75˚C

REVERSE CURRENT : IR (nA)

100 4
10 50˚C
5 25˚C
10

2
0˚C
2
1.0
1 P Type
−25˚C
0.5 Ta=25˚C
0.1 N Type
85˚C

−30˚C
50˚C

0.2
0˚C

0
0.1 0.01 0 2 4 6 8 10 12 14 16
0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
REVERSE VOLTAGE : VR (V)
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V)

Fig.4 Forward current vs. Fig.5 Reverse current vs. Fig.6 Capacitance between
forward voltage reverse voltage terminals vs.
(N Type) (N Type) reverse voltage

10 0.01µF D.U.T.
Ta=25˚C
REVERSE RECOVERY TIME : trr (ns)

9
VR=6V
8
5kΩ
7 PULSE GENERATOR SAMPLING
50Ω
OUTPUT 50Ω OSCILLOSCOPE
6

4
pe
3 P Ty

2 INPUT
N Type
1
0
0 1 2 3 4 5 6 7 8 9 10
FORWARD CURRENT : IF (mA)
100ns
Fig.7 Reverse recovery time vs.
forward current

OUTPUT trr

0
0.1IR
IR

Fig.8 Reverse recovery time (trr) measurement circuit