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Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Collector current A
ICP 1ms TC =80°C 50
Collector power dissipation PC 1 device 170 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter
1 1387a
MARCH 2014
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
2
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
50 50
VGE =20V 15V VGE=20V 15V
12V
40 12V
40
Collector current: IC [A]
10 8V 10
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25°C / chip
50 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
Tj=150°C
40
Collector current: IC [A]
6
Tj=125°C
30
4
20
2 IC=50A
10 IC=25A
IC=13A
0 0
0 1 2 3 4 5 5 10 15 20 25
[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C VCC=600V, IC=25A,Tj= 25°C
10.0
Collector - Emitter voltage: VCE [200V/div]
VGE [5V/div]
Cies
VCE
Capacitance: Cies, Coes, Cres [nF]
VGE
1.0
Gate - Emitter voltage:
0
Cres
0.1
Coes
0.0
0 10 20 30 -300 0 300
3
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=39Ω, Tj= 125°C VCC=600V, VGE=±15V, RG=39Ω, Tj= 150°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]
ton ton
tr tr
100 100
tf tf
10 10
0 20 40 60 0 20 40 60
Collector current: IC [A] Collector current: IC [A]
[ Inverter ] [ Inverter ]
Switching time vs. gate resistance (typ.) Switching loss vs. Collector current (typ.)
VCC=600V, IC=25A, VGE=±15V, Tj= 125°C VCC=600V, VGE=±15V, RG=39Ω
10000 7
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
6 Eon(150°C)
Eon(125°C)
5 Eoff(150°C)
1000
Eoff(125°C)
toff 4
ton
3
100 tr
Err(150°C)
tf 2
Err(125°C)
1
10 0
10 100 0 25 50 75
[ Inverter ] [ Inverter ]
Switching loss vs. gate resistance (typ.) Reverse bias safe operating area (max.)
VCC=600V, IC=25A, VGE=±15V +VGE=15V, -VGE <= 15V, RG >= 39Ω ,Tj =150°C
5 75
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Eon(150°C)
4
Collector current: IC [A]
Eon(125°C)
50
3 Eoff(150°C)
Eoff(125°C)
RBSOA
2 (Repetitive pulse)
Err(150°C) 25
Err(125°C)
1
0 0
10 100 1000 0 400 800 1200
[ Inverter ] [ Inverter ]
Forward current vs. forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip VCC=600V, VGE=±15V, RG=39Ω
50 1000
Tj=25°C
trr(150°C)
100 trr(125°C)
30
Irr(150°C)
Tj=150°C Irr(125°C)
20
Tj=125°C 10
10
0 1
0 1 2 3 4 5 0 25 50 75
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
50
Tj=25°C Tj=125°C
40
Forward current : IF [A]
30
20
10
0
0 1 2 3 4
[ Thermistor ]
Transient thermal resistance (max.) Temperature characteristic (typ.)
10.00 100
Thermal resistanse : Rth(j-c) [ °C/W ]
Resistance : R [kΩ]
FWD[Inverter]
1.00 Conv. Diode
10
IGBT[Inverter]
IGBT[Brake]
4 t
Zth rn 1 e n
n 1
0.10 1
n 1 2 3 4
τn [sec] 0.0023 0.0301 0.0598 0.0708
rn IGBT 0.09546 0.24203 0.34192 0.21059
[°C/W] FWD 0.11370 0.28826 0.40723 0.25081
B-IGBT 0.09546 0.24203 0.34192 0.21059
Conv 0.10404 0.26379 0.37265 0.22952
0.01 0.1
0.001 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
5
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
50 50
VGE=20V VGE=20V
15V 15V
12V
40 40
Collector current: IC [A]
30 30
10V 10V
20 20
10 10
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25°C / chip
50 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
Tj=150°C
40
Collector current: IC [A]
6
Tj=125°C
30
4
20
IC=50A
2
10 IC=25A
IC=13A
0 0
0 1 2 3 4 5 5 10 15 20 25
[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C VCC=600V, IC=25A,Tj= 25°C
10.0
Collector - Emitter voltage: VCE [200V/div]
VGE [5V/div]
Cies
VCE
Capacitance: Cies, Coes, Cres [nF]
VGE
1.0
Gate - Emitter voltage:
0
Cres
0.1
Coes
0.0
0 10 20 30 -300 0 300
6
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Weight: 180g(typ.)
Equivalent Circuit
[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]
21(P) 22(P1)
8 9
20 18 16
(Gu) (Gv) (Gw)
7
7MBR25VA120-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog,
be sur to obtain the latest specifications.
2. All
applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4. The
products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with
instructions set forth herein.