A1' - 2102

'l.hird Scrncster li. L. (Computcy Sci. Engg.) Lxaminrtion

EI,IICTRONICS DDVICDS AND CIRCUITS

Papcr-3KS03
( rrsc - 10305 )

ll Pages :I
'limc : Thrcc lkrur I lM. r. ,lxrk\ : 80

Notc : (l) Duc crcdit will be given to llcatDess and adeqtrate dirncDsions.
(2\ Assume suitable dala whcrevd lecessary.
(3) Diagraors and Chenrical equations should be gilen r,rherclcr necessaly
(4) Illustrate your answer wherevcr necossary with the help of ncal sketches
(s) Use pcn of BlLre/Black inlJrcfill ol y for writing thc answcr book.

I (a) Explain the volrampcre characteristics of zener diode itr detail. 1

(b) Explain in brief :-

(i) Cut in Voltage of diode
(ii) Reversc Breakdown Voltage

.(iii) Peak Inversc Voltage. 6

OR

2 (a) lxplain the opcration of Half wave rectifier with apprqpriate wavcforms and
its cfficiency derivation. 7

(b) Define the following for full wave rectificr:

(i) Ripple Factor
(ii)'l.ransformer Utilization Factor
(iii) Efficiency of Rectification. 6

3 (a) How tansisror works as an amplifier ? Ilxplain with appnrpliate eirruir

diagram. 7

t{l -21O2 P. t'.().

 (b) Derivc the relationship between currelt gain c and 1 6

OR

I (a) Draw and explain the input and output characteristics of common baso (CB)
cont'iguration. 7

(b) Explain, how ro test the transistor to verify whethcr it is working or faulty
with proper steps and diagrams 6

5 (a) For a given silicon transistodz€d circuit with Vcc = 12 V, Rc = 6 kO plot

Q point on dc load line.
*Vtt
Rc-

.T

Determine thc value of Rs to be used to set operating point at center 01'

the load line. if p = 100. 'l
(b) What is stability factor ? 7

OR

6 {a) Explain the follou ing terrns :-

(i) Thermal Runaway

(ii) Quiscent point

(iii) Icse and 16111 in transistor

{i'- 2102
 (b) A silicou transistor is biased by colleclor to basc biascd methul s,ith
Vcc = 15 V, Rc = 2 KO, Rr = 200 KO and p = 180.
l)etcnninc and ptot the coordinatcs of its Q point on l)C loadline.

1 (a) What arc thc biasing sshcmes availablc to achievc thc rcquircd bias itt Jl'li'l 'l
Explain any onc in dctail. 1

(b) What arc Enhanccment and Deplction MOSIiLTS ? Ilxplain constructiol irnd
oporation of Ilnhancemcnt MOSFET. 1

oR

3 (a) Draw the circuit of self bias configuration for FL'l and cxplain it. What is
the advantage of this biasing ? 1

(h) The maximum lransconriuctancc of n-channcl Jl'll'l is 9.8 x l0-rs il'

lnss = ltl mA. Calculate the pinch-off voltagc. '7

9 (a) A crystal oscillator has a following paramstcrs: L = 0.3ill, Cr = 0.065 Pl;

Cz= 1.0 Pf and R = 5.5 KCl. F-ind thc serics rcsonant licqucncy andQ-
factor of thc crystal. 1

(b) Explain Barkhausens criteria for tho oscillator in dctail. 6

oR

10. (a) ljxplain Hartlcy oscillator in detail. 1

(b) Dcsign a phase shift oscillator to operate at a frcquency ol 2KIlz using a

RC phasc shift oscillator. Calculate tho valuc of R if
C=0.1 ttf. 6

ll. (a) Give the comparison bctween photocmissive sensor. photovoltaic scnsor irnd
photo conductivo scnsor. 7

(b) What is lightcDritting diodc (LED) ? Uxplain construction. working principlc

ol l-ED's. 6

AiI -2t02 .1 P. t.o.

 OR

12. (a) Givc the consfuctional details of photo diodc. l)raw its VI charactcristics
and explain its working :
Dcscribc :
(i) Dark cunent
(ii) Photo voltage potcntial. 7

(b) What is opto coupler ? [rplain construction, working principle of optmouplcr.

6

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