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INTRODUCTION
FEATURES OF IPEMS
DPS SYSTEM
The active part of the DPS system contains a power switching stage
with two MOSFETs and their drive circuit. The drive circuit contains high
and low drivers with over current protection and the drive control logic. The
passive part contains capacitors, transformer and current doubling inductors.
Base substrate
The core element in this structure is the embedded power stage that
comprises of ceramic frame, power chips (Si in figure), isolation dielectric
and metalization circuit. Inside the power stage, multiple bare power semi
conductor dies, featuring vertical semi conductor structures with topside and
backside electrode pads, are buried in a ceramic frame.
Planar metallization
Plated Cu
Dielectric Sputtered Cu
and Sputtered Ni
passivation Sputtered Cr/Ni
Al pad on chip
Si
. IGBT or MOSFET chip
Drain contact
Ceramic
cutting
Si
Device
mount
Dielectric
pattern
Metalization
pattern
Steps Description
Ceramic Openings in flat Al2O3 or AlN plate by laser cutting
frame
Die mount Dispense dielectric
Dielectric Void free precision dielectric pattern, good adhesion
pattern by screen - printing or/and photolithography.
Metalization Adhesion, barrier, low stress, low resistance by
sputtering of Ti/Cr-Cu thin film. Thicker (>5mil),
low stress, low resistance, solderable, precision
pattern by electroplating of Cu, etching
By assembling the three parts, i.e. the substrate, the power stage and the gate
driver, we get the active module. It has a substrate area of 28.5 × 27.3mm. The
exploded view of active IPEM is shown in figure 5.
In this circuit, the two magnetic structures i.e. inductors and transformers,
can be integrated in to one physical structure through integrated magnetics
technology. The equivalent magnetizing inductance is used to realize the current
doubler inductors.
The transformers are built with two planar E-cores that share a common I-
core. The ac flux is partially cancelled in the shared I-core. The D C blocking
capacitor is now implemented in only transformer T1 using the hybrid winding
technology. This technology is implemented using Cu traces on both sides of the
winding and a dielectric layer placed in the middle to enhance the capacitive
component of the winding. For this we use a high permittivity ceramic [Er
>12000]. The Transformer T2 is a conventional planar low-profile transformer.
To get the complete IPEM, we mount the active and passive IPEMs on a
single ceramic chip carrier with metalization and then bonded to the heat spreader.
Figure 8 shows an IPEM based DPS system and its wire bonded version.
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PERFORMANCE OF IPEM
Inductance (nH) 10 3
Capacitance (pF) 4 20
No. of passive 6 1
components
Volume of passives 173 82
No. of terminals 15 5
Volume of terminals 170 5
Total passive volume 343 87
System profile 20 10
System power density 1 X3.6
APPLICATIONS
IPEM can be used for most of the power electronic circuits. Hence it has a
wide range of applications. It includes
Motor drives
UPS systems
Power supplies
Inverters
Converters etc.
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CONCLUSION
REFERENCES
[1] F.C.Lee, J.D.Van Wyk, D. Boroyevich, G.Q. Lu, Z. Liang and P. Barbosa
“Technology trends towards system in a module in power electronics ”,
IEEE circuits &systems, Vol. 2, No 4, Vth quarter, pp 6-21, 2002.
[2] X. Liu, and G. Q. Lu “Power chip inter connection: from wire bonding to
area bonding,” Advancing microelectronics, Vol. 28.No 4, July/August
2001.
[4] Z. Liang, F.C. Lee, “Embedded power technology for IPEM packaging
applications”, IEEE proceedings on APEC 2001 pp 1057-1061
ABSTRACT
CONTENTS
Introduction 1
Features of IPEM 3
DPS system 4
Performance of IPEM 12
Applications 14
Conclusion 15
References 16
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ACKNOWLEDGEMENT
I also thank all the other faculty members of AEI department and my
friends for their help and support.