ANSYS IGBT Inverter Multiphysics Solution

A Comprehensive
IGBT – Inverter Solution

that Includes
EMI/EMC, Mechanical
and Thermal Physical
Domains
Scott Stanton
Technical Director
Advanced Technology Initiatives
ANSYS, Inc.
© 2010 ANSYS, Inc. All rights reserved. 11 ANSYS, Inc. Proprietary

Objectives
• ANSYS Multiphysics Inverter Design Flow

– High-Power System Design Concept
• IGBT Electro-Thermal Model
– Average
– Dynamic
• IGBT Package Thermal Model
– Extracted from CFD
– EMI/EMC Analysis
• Parameter Extraction: R, L, C
• Radiated Emissions – Full Wave Effects
– IGBT Package Mechanical Stress Analysis
• Thermal Stress
• Electromagnetic Forces

IGBT Hierarchal Models
Average IGBT Model Dynamic IGBT Model
A B F
A C E F
DC core
DC core
Energy calculation Capacities C(V), C(I)

parasitics L, R, C
controlled sources
Full parameter excess

Thermal network
Thermal network
Maximum simulation speed: Maximum simulation accuracy:

• Accurate static behavior • Sophisticated semiconductor model
• Accurate thermal response • Accurate dynamic and thermal behavior
• No voltage and current transients • Accurate voltage and current waveforms
• Suitable for system design analysis • Suitable for drive optimization, EMI/EMC
IGBT Characterization
Extraction of the IGBT Electro-Thermal Parameters

Transfer characteristic
curve from datasheet
vs. measured data
Fitted curve
Measured Data
Fitted Curve
Extracted parameter values

The Average IGBT Model
• Three main parts

– Static core
– Thermal network
– Energy calculation section
• Parameters extracted through characteristic curves

The Average IGBT Model
• Switching V and I waveforms are square

• Switching losses are calculated at each switching period
• Turn-ON/OFF power pulses are injected into thermal network
• Amplitude of the rectangular power pulses are calculated
• PON/POFF – Switching Power

• EON/EOFF – Energy losses
• PDC – Conduction power dissipation;
• TON/TOFF – Power injection pulse durations
• Vce,sat – Saturation collector-emitter voltage
The Dynamic IGBT Model
• Dynamic IGBT shares the same static the Average model

• The switching energy of the Dynamic IGBT model is the direct
integration of the switching voltage and current

The Dynamic IGBT Model
• Dynamic IGBT accurately captures the switching waveforms

• Suitable for EMI/EMC analysis

IGBT Thermal Model: LTI Method
• Temperature rise at any point in the system is the sum of the

independently derived temperature increase attributable to each heat
source in the system
• Assumptions:
– Temperature assumed to be a linear function of heat sources
– This requires that the fluid flow is constant (for each study) and density
and all properties are constants
– Geometry remains fixed
IGBT Thermal Model
Each matrix element is a complete thermal transient

response curve
T1 (t ) 11 (t ) 12 (t )  1n (t ) h1 (t )
T2 (t ) 21 (t ) 22 (t )  2 n (t ) h2 (t )
     ...
Tn (t ) n1 (t ) n 2 (t )  nn (t ) hn (t )
R1 R2 R3 R4 R5 R6
C1 C2 C3 C4 C5 C6
Foster network
0
Implementation
Simplorer
Data processing
Icepak Transfer T(time)

into Zth(time)
Apply each heat source

Specify the geometry individually
of the multi-heat- measure temperature at Extract parameters
source system nodes of interest Filter Generate model
through curve fitting
(parametric analysis)
Normalize

Implementation
Simplorer
Data processing

into Zth(time)

Normalize

Implementation
Simplorer
Data processing

into Zth(time)

Normalize

Implementation
Simplorer
Data processing

into Zth(time)

Normalize

Implementation
Simplorer
Data processing

into Zth(time)

R1 R2 R3 R4 R5 R6
Normalize
C1 C2 C3 C4 C5 C6

IGBT Thermal Model Validation
• Simple 4-node system

• Air at a constant speed of 1 m/s
1
IGBT Thermal Model Results
Node 1 – self-heating Node 1 – Due to Source 2
Node 1 – Due to Source 4 Node 1 – Due to Source 3

Temperature at Node 1 with constant heat flux applied at all 4 nodes

Temperature at Node 1 with time-variant heat flux

IGBT Inverter System
Temperature Profile Line Current Profile

EMI/EMC: L,R,C Extraction
• Extract the resistance, inductance, capacitance and conductance

(R,L,C) parameters of the entire package
Frequency can have a significant impact on the design performance
Low Frequency High Frequency

EMI/EMC: L, R, C Extraction
• Extracting parameters is straightforward as the nets are

automatically assigned
Positive Bar
Negative Bar
Phase A
Phase B
Phase C
EMI/EMC: Mesh and Field Result
Current Distribution
The structure is meshed

using automatic and
adaptive meshing

EMI/EMC: Methodology
• How do we set up the frequency sweep?

– Nyquist sampling: To capture a time step of Ts, obtain frequency domain
information up to:
1
Fmax
2 ts
– For a time domain waveform with a risetime of 80 ns, in order to capture the
ringing in the time domain, we would want to capture at least 4 samples during
this risetime. This implies a sampling time of 20 ns
• We need to solve up to 50 MHz (= 1/20ns)

EMI/EMC: Methodology
• The simulation outputs consist of the RLC matrices for different frequencies

System Integration
Circuit Design based on Parametrized IGBT and Frequency Dependent Model

System Integration
2DGraphSel1 NIGBT71.IC
60.00 2DGraphCon1
50.00 474.00m
400.00m
25.00
FFT GS_I...
200.00m
0
0
-22.50
100.00 1.00k 3.00k 10.00k 100.00k 1.00Meg
0 100.00m 240.00m
Extract Power Loss

Full Wave Effect
2DGraphCon1
474.00m
400.00m Ansoft HFSS
GS_I...
200.00m
0
100.00 1.00k 3.00k 10.00k 100.00k 1.00Meg
Multiplied magE plots Freq. res.

by Simplorer
Emission Test
MagE@10m by Normalized S para.

specified inputs

Emitted Fields
• The E field is very localized

close to the module even at
100 MHz
• However, the very high
power can lead to large
Power Power
E field at 1m for 1000w E field
E field at at
1m1m f
Spectrum (MHz) (W)
values
Spectrum (MHz)
of
(V/m)
E field
(W)
even far
(V/m) (V/m
16.52892562 21439.97604 from2.6312
16.52892562the module
21439.97604 56.41286497 2.631
33.05785124 8635.09049 • 33.05785124
This2.7994
design8635.09049
is fine at 24.17307232 2.799
49.58677686 5579.619715 110MHz.
49.58677686
2.8731 5579.619715 16.0308054 2.873
66.11570248 4131.16773 66.11570248
3.063 4131.16773 3.063
12.65376676
82.6446281 3276.823585
Power E 82.6446281
field at3.4045 3276.823585
1m for 1000w
Power 11.15594589
E field
E field 3.404
at at
1m 1m f
99.17355372
Spectrum (MHz) 2712.888158
(W) 99.17355372
Spectrum (V/m) 2712.888158
3.8924
(MHz) (W) (V/m) 3.892
10.55964586 (V/m
115.7024793
16.52892562 2308.359536
21439.97604 4.4861
115.7024793
2.6312 2308.359536
16.52892562 21439.97604 10.35553171
56.41286497 4.486
2.631
mag E @ 100 MHz, Power = 10 000W2022.75744
132.231405
33.05785124 8635.09049 4.905
132.231405
33.05785124
2.7994 2022.75744
8635.09049 9.921625241
4.905
24.17307232
2.799
49.58677686 5579.619715 49.58677686
2.8731 5579.619715 16.0308054
2.873
66.11570248 4131.16773 66.11570248
3.063 4131.16773 12.65376676
3.063
82.6446281 3276.823585 82.6446281
3.4045 3276.823585 11.15594589
3.404
99.17355372 2712.888158 99.17355372
3.8924 2712.888158 10.55964586
3.892
IGBT Thermal and Structural Analysis

Motivation and Methodology
• The high currents that flow through IGBT’s

make them susceptible to failure due to the
large stresses
– Lorentz forces
– Switching losses
Thermal stresses
– Conduction losses
Electrical Circuit Switching

(Simplorer) Losses
Conduction Losses
Electromagnetics
+
(Maxwell 3D)
Lorentz Forces
Workflow
ANSYS
Workbench R13
Maxwell V14
Solve for
Terminal Current Magnetostatics
Lorentz
Forces
Simplorer V9 Ohmic
Solve IGBT
ANSYS Mechanical
Losses Solve
Circuit
Static Structural
Temperature
Switching Losses Distribution
ANSYS Thermal
Solve
Temperature
Stress and
Deformation

Step 1
Maxwell V14
Solve for
Lorentz
Forces
Simplorer V9 Ohmic
Solve IGBT
ANSYS Mechanical
Losses Solve
Circuit
Static Structural
Temperature
ANSYS Thermal
Solve
Temperature
Stress and
Deformation

Create Simplorer Solution
Simplorer V9
• Launch ANSYS
Workbench R13
• Drag and Drop a
Simplorer Analysis
System onto the project
page
• Right click on Setup and
select Edit to launch
Simplorer V9

IGBT Circuit
Simplorer V9
• Input Pulse
• IGBT Unit
• Ammeter (Gives Terminal Current through IGBT)
• Multiplier (Gives Switching Losses across IGBT)
Transient Solution
Simplorer V9
• Transient Solution was run for time of 40 ms

with settings as shown in image
• Following results were obtained
– Max Current reported by
Ammeter = 20 A
– Average Losses reported by
Multiplier = 49.5 Watts
• Close Simplorer window and return to Project

page
Step 2
Maxwell V14
Solve for
Lorentz
Forces
Simplorer V9 Ohmic
Solve IGBT
ANSYS Mechanical
Losses Solve
Circuit
Static Structural
Temperature
ANSYS Thermal
Solve
Temperature
Stress and
Deformation

Create Maxwell System
Maxwell V14
• Select a Maxwell
Analysis System
• Drag and drop it on
Project Schematic
page as a Standalone
system
• Right click on
“Geometry” tab and
select Edit to Launch
Maxwell

Complete IGBT Module
Maxwell V14
One Leg
Phase A Phase B Phase C
Positive Terminal
Negative Terminal
IGBTs (12 in total)
The Current through

one phase is shared
Diodes (12 In total)
equally between two
IGBT’s

Material Definition
Maxwell V14
• Import the IGBT model

• Set Solution type to
“Magnetostatic”
• Set material properties of all
the objects
• Diodes and IGBT units
which are OFF mode are
applied with Vacuum
material

Set Current Excitations
Maxwell V14
• Maximum current
through IGBT was
calculated by Simplorer
which will be set as
terminal current
• Set Current excitations of
20A to positive terminals
• Set Current excitation of
40A as Phase current
– The value is set as
twice the terminal
current

Solve
Maxwell V14
• Add solution Setup and solve the case with

proper settings
• Plot J field to check the results
• Close Maxwell and return to Project Page

Step 3
Maxwell V14
Solve for
Lorentz
Forces
Simplorer V9 Ohmic
Solve IGBT
ANSYS Mechanical
Losses Solve
Circuit
Static Structural
Temperature
ANSYS Thermal
Solve
Temperature
Stress and
Deformation

Create Steady State Thermal
System
Steady State Thermal
• Select Steady State

Thermal Analysis
system
• Drag and drop it on
Solution tab of
Maxwell 3D
• This will enable
transfer of Ohmic
losses calculated in
Maxwell to ANSYS
Mechanical
Creating Material Data
• Right click on
Engineering Data and
select Edit to access
Material database
• Add needed required
material from database
to the project and return
to project page
• Double click on “Model”
tab to launch ANSYS
Mechanical

Steady State Thermal Setup
• Specify appropriate
materials to all objects
• Apply mesh sizes on

required objects and
Generate Mesh
• Maxwell link

Setup (Contd…)
• Right Click on “Imported Load

(Maxwell3DSolution) tab and
select “Insert  Heat
Generation”
• Under “Geometry”, select all
the volumes from the
geometry and select “Import
Load”
• Conduction losses will be
mapped from Maxwell to
ANSYS Mechanical

Setup (Contd…)
• In addition to conduction losses,

we also need to apply switching
losses of 49.5 W, which was
calculated in Simplorer.
• We need to divide the switching
losses by the volume of all
bodies which carry current since
the losses will be shared among
them
• The resulting value is around
0.01683 W/mm3
• We will apply this value through
command line.
• This value will add to the
conduction losses already
applied.

Temperature Distribution

Step 4
Maxwell V14
Solve for
Lorentz
Forces
Simplorer V9 Ohmic
Solve IGBT
ANSYS Mechanical
Losses Solve
Circuit
Static Structural
Temperature
ANSYS Thermal
Solve
Temperature
Stress and
Deformation

Create Static Structural System
Static Structural
• Select Static Structural system, Drag and drop it on the “Solution” tab
of Steady State Thermal System
• Select “Solution” tab of Maxwell 3D system, drag and drop it on
“Setup” tab of Static Structural
• Right click on “Setup” and select “Edit” to launch ANSYS Mechanical
Thermal Loading
Mapping Electromagnetic Force

Setup
Static Structural
• Right Click on “Imported Load (Maxwell3DSolution) tab and
select “Insert  Body Force Density”
• Under “Geometry”, select Bondwires to which we want to apply
Lorentz Forces
• The forces calculated by Maxwell will be applied to the
Bondwires

Results
Static Structural
Equivalent Stress
Max Value: 120 MPa
Deformation
Max Value: 0.044 mm
Summary
• ANSYS Workbench is used to simulate

multiphysics problem of IGBT accurately
taking into account:
– Electric Circuits
– Electromagnetics
– Thermal
– Stress
• On the Workbench platform, Simplorer,
Maxwell3D and ANSYS Mechanical were used
for various simulations and data transfer
Conclusion
• ANSYS’ Integrated Simulation Environment

Allows Engineers to Analyze:
– Average and Dynamic IGBT Models
– Conducted Emissions: L,R,C Extraction
– Thermal Effects: Network Model
– Radiated Emissions
– Thermal and Electromagnetic Stress
ANSYS technology provides the most
comprehensive state-of-the-art high power
inverter solutions in the industry.
Thank You

ANSYS IGBT Inverter Multiphysics Solution

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A Comprehensive

IGBT – Inverter Solution

© 2010 ANSYS, Inc. All rights reserved. 11 ANSYS, Inc. Proprietary

• ANSYS Multiphysics Inverter Design Flow

© 2010 ANSYS, Inc. All rights reserved. 2 ANSYS, Inc. Proprietary

Average IGBT Model Dynamic IGBT Model

Energy calculation Capacities C(V), C(I)

Full parameter excess

Maximum simulation speed: Maximum simulation accuracy:

Extraction of the IGBT Electro-Thermal Parameters

Extracted parameter values

© 2010 ANSYS, Inc. All rights reserved. 4 ANSYS, Inc. Proprietary

• Three main parts

© 2010 ANSYS, Inc. All rights reserved. 5 ANSYS, Inc. Proprietary

• Switching V and I waveforms are square

• PON/POFF – Switching Power

• Dynamic IGBT shares the same static the Average model

© 2010 ANSYS, Inc. All rights reserved. 7 ANSYS, Inc. Proprietary

• Dynamic IGBT accurately captures the switching waveforms

© 2010 ANSYS, Inc. All rights reserved. 8 ANSYS, Inc. Proprietary

• Temperature rise at any point in the system is the sum of the

Each matrix element is a complete thermal transient

Icepak Transfer T(time)

Apply each heat source

© 2010 ANSYS, Inc. All rights reserved. 11 ANSYS, Inc. Proprietary

Icepak Transfer T(time)

Apply each heat source

© 2010 ANSYS, Inc. All rights reserved. 12 ANSYS, Inc. Proprietary

Icepak Transfer T(time)

Apply each heat source

© 2010 ANSYS, Inc. All rights reserved. 13 ANSYS, Inc. Proprietary

Icepak Transfer T(time)

Apply each heat source

© 2010 ANSYS, Inc. All rights reserved. 14 ANSYS, Inc. Proprietary

Icepak Transfer T(time)

Apply each heat source

© 2010 ANSYS, Inc. All rights reserved. 15 ANSYS, Inc. Proprietary

• Simple 4-node system

Node 1 – self-heating Node 1 – Due to Source 2

Node 1 – Due to Source 4 Node 1 – Due to Source 3

Temperature at Node 1 with constant heat flux applied at all 4 nodes

© 2010 ANSYS, Inc. All rights reserved. 18 ANSYS, Inc. Proprietary

Temperature at Node 1 with time-variant heat flux

Temperature Profile Line Current Profile

© 2010 ANSYS, Inc. All rights reserved. 20 ANSYS, Inc. Proprietary

• Extract the resistance, inductance, capacitance and conductance

Low Frequency High Frequency

• Extracting parameters is straightforward as the nets are

The structure is meshed

© 2010 ANSYS, Inc. All rights reserved. 23 ANSYS, Inc. Proprietary

• How do we set up the frequency sweep?

© 2010 ANSYS, Inc. All rights reserved. 24 ANSYS, Inc. Proprietary

© 2010 ANSYS, Inc. All rights reserved. 25 ANSYS, Inc. Proprietary

Circuit Design based on Parametrized IGBT and Frequency Dependent Model

© 2010 ANSYS, Inc. All rights reserved. 26 ANSYS, Inc. Proprietary

Extract Power Loss

Multiplied magE plots Freq. res.

MagE@10m by Normalized S para.

© 2010 ANSYS, Inc. All rights reserved. 28 ANSYS, Inc. Proprietary

• The E field is very localized

© 2010 ANSYS, Inc. All rights reserved. 30 ANSYS, Inc. Proprietary

• The high currents that flow through IGBT’s

Electrical Circuit Switching

© 2010 ANSYS, Inc. All rights reserved. 32 ANSYS, Inc. Proprietary