2N7002DW

60V N-Channel Enhancement Mode MOSFET

FEATURES SOT-363 Unit：inch(mm)

• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω

0.018(0.45)
0.006(0.15)
0.087(2.20)
0.074(1.90)
• Advanced Trench Process Technology 0.010(0.25)

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays

0.087(2.20)
0.078(2.00)
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV 0.054(1.35)
0.045(1.15)
‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
0.030(0.75)
0.021(0.55) 0.010(0.25)
MECHANICALDATA 0.056(1.40)
0.047(1.20)
0.003(0.08)

• Case: SOT-363 Package

0. 040(1.00)
0. 031(0.80)
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces , 0.006grams
• Marking : 702

0.044(1.10)
0.012(0.30)

MAX.
0.005(0.15)

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R S ym b o l Li mi t U ni t s
D r a i n- S o ur c e Vo l t a g e V DS 60 V

G a t e - S o ur c e Vo l t a g e V GS +20 V

C o nt i nuo us D r a i n C ur r e nt ID 11 5 mA

P ul s e d D r a i n C ur r e nt 1)
ID M 800 mA
T A = 2 5 OC 200
M a xi m um P o w e r D i s s i p a t i o n PD mW
T A = 7 5 OC 120
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
T J , T S TG -5 5 to + 1 5 0 O
C
R a ng e
Junction-to Ambient Thermal Resistance(PCB mounted)2 R θJ A 625 O
C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

REV.0.0-AUG.4.2008 PAGE . 1
 2N7002DW
ELECTRICALCHARACTERISTICS

P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s
S ta ti c
D r a i n- S o ur c e B r e a k d o w n
B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V
Vo lta g e
G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V
D r a i n- S o ur c e O n- S t a t e
R D S ( o n) VGS=4.5V, I D=75mA - - 7 .5
R e s i s t a nc e
Ω
D r a i n- S o ur c e O n- S t a t e
R D S ( o n) VGS=10V, I D=500mA - - 5
R e s i s t a nc e
Ze r o Ga te Vo lta g e D r a i n
ID S S VDS=60V, VGS=0V - - 1 uA
C ur r e nt
Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA

Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS

Dynamic

To t a l G a t e C h a r g e Qg - 0 .6 0 .7
V D S = 1 5 V , ID = 5 0 0 m A
G a t e - S o ur c e C ha r g e Qgs - 0 .1 - nC
VGS=5V
G a t e - D r a i n C ha r g e Qgd - 0 .0 8 -

Tu r n - O n D e l a y Ti m e ton VDD=10V , RL=20Ω - 9 15

ID=500mA , VGEN=10V ns
Tu r n - O f f D e l a y Ti m e t o ff RG=10Ω - 21 26

In p u t C a p a c i t a n c e C iss - - 50

O ut p ut C a p a c i t a nc e C oss V D S = 2 5 V , V GS = 0 V - - 25 pF
f=1 .0 MHZ
R e v e r s e Tr a n s f e r
C rss - - 5
C a p a c i t a nc e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d
Is - - - 250 mA
C ur r e nt
D i o d e F o rwa rd Vo lta g e V SD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V

Switching VDD Gate Charge VDD

Test Circuit Test Circuit
VIN RL VGS RL

VOUT

1mA
RG

RG

REV.0.0-AUG.4.2008 PAGE . 2
 2N7002DW
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)

1.2 1.2

I D - Drain Source Current (A)

V GS = 10V ~ 6.0V 5.0V V DS=10V
ID - Drain-to-Source Current (A)

1 1

0.8
4.0V 0.8

0.6 0.6

0.4 0.4
T J=25 OC
3.0V
0.2 0.2

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD

FIG.1- Output CHARACTERISTIC
Characteristic FIG.2- Transfer Characteristic

5 10
I D=500mA
R DS(ON) - On-Resistance ( W )
R DS(ON) - On-Resistance ( W )

4 8

3 6
V GS=4.5V
T J=125 OC
2 4
V GS=10V
1 2
T J=25 OC
0 0
0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10

ID - Drain Current (A) V GS - Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage

2
V GS=10V
RDS(ON) - On-Resistance(Normalized)

1.8 I D=500mA
1.6

1.4

1.2

0.8

0.6

0.4
-50 -25 0 25 50 75 100 125 150
o
TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

REV.0.0-AUG.4.2008 PAGE . 3
 2N7002DW

10
Vgs V DS=15V

V GS - Gate-to-Source Voltage (V)

Qg I D=500mA
8

Vgs(th) Qsw
0
Qg(th) 0 0.2 0.4 0.6 0.8 1

Qgs Qgd Qg Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge

Vth - G-S Threshold Voltage (NORMALIZED)

1.2 73
I D=250uA
BVDSS - Breakdown Voltage (V)

I D=250uA
72
1.1
71
1 70
69
0.9
68
0.8 67
66
0.7
65
0.6 64
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
o o
TJ - Junction Temperature ( C) TJ - Junction Temperature ( C)

Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature

10
V GS=0V
IS - Source Current (A)

1
T J=25 OC

T J=125 OC
0.1

T J=-55 OC
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

VSD - Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

REV.0.0-AUG.4.2008 PAGE . 4
 2N7002DW

MOUNTING PAD LAYOUT

SOT-363 Unit：inch(mm)

0.018
(0.45)
(0.50)
0.020

(1.90)
0.075

0.026 0.026
(0.65) (0.65)

ORDER INFORMATION

• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel

LEGAL STATEMENT

Copyright PanJit International, Inc 2012

The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.

REV.0.0-AUG.4.2008 PAGE . 5
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