2SD669/2SD669A

NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free
TO-126C
2.7±0.2
FEATURES 7.6±0.2
1.3±0.2

Power dissipation 4.0±0.1

PCM : 1mW（Tamb=25℃） 10.8±0.2

Collector current
O 3.1± 0.1

1 2 3

ICM : 1.5 A 2.2±0.1

Collector-base voltage 1.27±0.1

15.5±0.2
V(BR)CBO : 180 V
0.76 ±0.1
Collector-emitter voltage
VCEO 2.29 Typ.

2SD669 : 120 V 4.58±0.1

0.5± 0.1

2SD669A : 160 V
Operating and storage junction temperature range 1: Emitter
TJ，Tstg: -55℃ to +150 ℃ 2: Collector
3: Base

Dimens ions in Millimeters

CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 1mA ， IE=0 180 V

2SD669 120
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA ， IB=0 V
2SD669A 160
Collector-emitter breakdown voltage V(BR)EBO
IE= 1mA， Ic=0 5 V

Collector cut-off current ICBO VCB=160 V , IE=0 10 μA

Emitter cut-off current IEBO VEB= 4V , IC =0 10 μA
2SD669 60 320
hFE(1) * VCE=5V, IC= 150 mA
2SD669A 60 200
DC current gain
hFE(2) * VCE=5V, IC= 500mA 30

Collector-emitter saturation voltage VCE (sat) * IC=500 mA, IB=50mA 1 V

Base-emitter voltage VBE * VCE=5V,IC= 150mA 1.5 V

Transition frequency fT VCE=5V, IC=150mA 140 MHz

Collector output capacitance C ob VCB=10 V , IE =0,f=1MHz 14 pF

* The 2SD669 and 2SD669A are grouped by h FE1 as follows.

Rank B C D
2SD 669 60 - 120 100 - 200 160 - 320
2SD669A 60 - 120 100 - 200 ----

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

10-Jul -2007 Rev. B Page 1 of 3
 2SD669/2SD669A
NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors

Maximum Collector Dissipation

Curve
Area of Safe Operation
30
Collector power dissipation PC (W)

3
(13.3 V, 1.5 A)

Collector current IC (A)

1.0
20

0.3
DC Operation(TC = 25°C)
10 0.1

0.03

0.01
0 50 100 150 1 3 10 30 100 300
Case temperature TC (°C) Collector to emitter voltage VCE (V)

Typical Output Characteristecs Typical Transfer Characteristics

1.0 500
5
5. 5.40.5 .0
4 VCE = 5 V
TC = 25°C 200
3.5
Collector current IC (mA)

0.8
Collector current IC (A)

3.0 P
C 100
=
2.5 20
0.6 W 50
Ta = 75°C

2.0
–25
25

1.5 20
0.4
10
1.0
5
0.2 0.5 mA
2
IB = 0
1
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0
Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

DC Current Transfer Ratio Collector to Emitter Saturation Voltage

Collector to emitter saturation voltage VCE(sat) (V)

vs. Collector Current vs. Collector Current

300 1.2
75° C IC = 10 IB
Ta =
DC current transfer ratio hFE

250 1.0

25
200 0.8

150 –25 0.6

C
5°

100 0.4
=7
25
C
T

50 VCE = 5 V 0.2

1 0
1 3 10 30 100 300 1,000 3,000 1 3 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

10-Jul-2007 Rev. B Page 2of 3
 2SD669/2SD669A
NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors

Base to Emitter Saturation Voltage Gain Bandwidth Product

vs. Collector Current vs. Collector Current
1.2
Base to emitter saturation voltage VBE(sat) (V)

240
IC = 10 IB VCE = 5 V

Gain bandwidth product fT (MHz)

Ta = 25°C
1.0 200

25°C
0.8 TC = – 160
25
0.6 75 120

0.4 80

0.2 40

0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)

Collector Output Capacitance

vs. Collector to Base Voltage
200
Collector output capacitance Cob (pF)

f = 1 MHz
100 IE = 0

50

20

10

2
1 2 5 10 20 50 100
Collector to base voltage VCB (V)

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

10-Jul-2007 Rev. B Page 3 of 3