2SK3018

SOT-323 Plastic-Encapsulate MOSFETS

2SK3018 N-channel MOSFET
SOT-323
FEATURES 3
z Low on-resistance 1
z Fast switching speed 2
1. GATE
z Low voltage drive makes this device ideal for portable equipment 2. SOURCE
z Easily designed drive circuits 3. DRAIN
z Easy to parallel

Marking: KN
Equivalent circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter Value Units
VDS Drain-Source voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Continuous Drain Current 0.1 A
PD Power Dissipation 0.2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
RθJA Thermal Resistance from Junction to Ambient 625 ℃ /W

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 µA
Gate –Source leakage current IGSS VGS =±20V, VDS = 0V ±500 nA
Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 0.8 1.5 V
VGS = 4V, ID =10mA 8 Ω
Drain-Source On-Resistance RDS(on)
VGS =2.5V,ID =1mA 13 Ω
Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS
Dynamic Characteristics*
Input Capacitance Ciss 13 pF
Output Capacitance Coss VDS =5V,VGS =0V,f =1MHz 9 pF
Reverse Transfer Capacitance Crss 4 pF
Switching Characteristics*
Turn-On Delay Time td(on) 15 ns
Rise Time tr VGS =5V, VDD =5V, 35 ns
Turn-Off Delay Time td(off) ID =10mA, Rg=10Ω, RL=500Ω 80 ns
Fall Time tf 80 ns

*These parameters have no way to verify.

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 2SK3018
Typical Characteristics
Output Characteristics Transfer Characteristics
0.20 200
Ta=25℃ 4.0V VGS=3.0V
100
Pulsed
3.5V

0.15 30

(mA)
(A)

10
ID

ID
VGS=2.5V
DRAIN CURRENT

DRAIN CURRENT
0.10
3

1
0.05
VGS=2.0V
VDS=3V
0.3
Ta=25℃
VGS=1.5V
Pulsed
0.00 0.1
0 1 2 3 4 5 0 1 2 3 4

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

60 15
Ta=25℃ Ta=25℃
Pulsed Pulsed
( Ω)

( Ω)

40 10
RDS(ON)

RDS(ON)
ON-RESISTANCE

ON-RESISTANCE

ID=100mA
20 5

ID=50mA
VGS= 2.5V

VGS= 4V
0 0
1 3 10 30 100 200 0 5 10 15 20

DRAIN CURRENT ID (mA) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD
200
VGS=0V
100 Ta=25℃
Pulsed

30
IS (mA)

10
SOURCE CURRENT

0.3

0.1
0.2 0.4 0.6 0.8 1.0

SOURCE TO DRAIN VOLTAGE VSD (V)

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