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2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Note1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = −12 A
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Electrical Characteristics (Ta = 25°C)
Rise time tr ⎯ 18 ⎯
ID = −6 A
0V
VGS VOUT
⎯ ⎯
RL = 8.3 Ω
Turn-on time ton −10 V 30
Switching time ns
50 Ω
Fall time tf ⎯ 18 ⎯
VDD ≈ −50 V
Marking
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ID – VDS ID – VDS
−5 −20
Common source −4 −3 Common source
Tc = 25°C Tc = 25°C −8
Pulse test −8 Pulse test
−4 −16 −6
−10 −6
(A)
Drain current ID (A)
−4
−10
Drain Current ID
−3 −12
−3.5
−2.5
−2 −8
−3
−1 −4
−2.5
VGS = −2 V
VGS = −2 V
0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −2 −4 −6 −8 −10
−8 Pulse test
25
−2.4
Drain current ID (A)
Tc = −55°C
100
−6
Drain-source voltage
−1.6 ID = −8 A
−4
−4
−0.8
−2
−2
0 0
0 −1 −2 −3 −4 −5 −6 0 −4 −8 −12 −16 −20
⎪Yfs⎪ – ID
RDS (ON) – ID
30
(S)
2.0
Common source Common source
VDS = −10 V Tc = 25°C
Forward transfer admittance ⎪Yfs⎪
1.0
Drain–source ON resistance
25 0.3 VGS = −4 V
5 100
3 −10
0.1
0.05
1 0.03
−0.3 −1.0 −3 −10 −20 −0.1 −0.3 −1.0 −3 −10 −20
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(A)
0.4 Pulse test
−4 −8 −10
0.2 VGS = −4 V −2
−3
−2
−1
0.1
VGS = −10 V −5
−0.5 0, 1
−1
0 −0.3
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0
500
Gate threshold voltage
300 Coss
−2
Common source
100 VGS = 0 V
Crss
f = 1 MHz
50 −1
Tc = 25°C
30
−0.1 −0.3 −1 −3 −10 −30 −100
Pulse test
VDS (V)
VGS (V)
−80 −16
30
VDS
−60 −12
VDD = −80 V
Drain-source voltage
Gate-source voltage
20 −20 V
−40 −40 V −8
10
−20 −4
VGS
0 0 0
0 40 80 120 160 0 20 40 60 80 100
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rth – tw
3
0.1
0.1 0.05
0.05 PDM
0.02
0.03 0.01 t
Single pulse
T
0.01
Duty = t/T
0.005 Rth (ch-c) = 3.57°C/W
0.003
10 μ 100 μ 1m 10 m 100 m 1 10
IC max (pulsed)*
−50
Avalanche energy EAS (mJ)
1 ms*
ID max (continuous)
10 ms* 300
Drain current ID (A)
−10
−5 200
−3
DC operation
Tc = 25°C 100
−1
0
−0.5 *: Single nonrepetitive 25 50 75 100 125 150
pulse Tc = 25°C
−0.3
Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
temperature. VDSS max
−0.1
−1 −3 −10 −30 −100 −300
VDD VDS
RG = 25 Ω 1 2 ⎛ B VDSS ⎞
Ε AS = ·L·I · ⎜⎜ ⎟
⎟
VDD = −25 V, L = 2.94 mH 2 B
⎝ VDSS − V DD ⎠
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