EEE2002 Semiconductor Devices and Circuits L T P J C

2 0 2 4 4
Pre-requisite EEE1002 Syllabus version
Anti-requisite v. 1.0
Course Objectives:
1. To apply the knowledge of solid state devices principles to analyze electronic circuits.
2. To design amplifiers under different configurations and study their responses
3. To have hands on learning experience and software knowledge by doing practical exercises and
projects.

Expected Course Outcome:

On the completion of this course the student will be able to:
1. Understand the behavior of semiconductor devices
2. Analyze the characteristics of diodes and its applications
3. Relate the characteristics of various transistors with DC sources
4. Infer the various configurations of BJT
5. Infer the various configurations of MOSFET
6. Analyze the high speed response of semiconducting devices.
7. Compare and contrast the negative and positive feedback in amplifiers
8. Design and conduct experiments, as well as analyze and interpret data
9. Design a component or a product applying all the relevant standards with realistic
constraints

Student Learning Outcomes (SLO): 1,2,5,9

1. Having an ability to apply mathematics and science in engineering applications
2. Having a clear understanding of the subject related concepts and of contemporary issues
5. Having design thinking capability
9. Having problem solving ability- solving social issues and engineering problems

Module:1 Semiconductor Device Physics 2 Hours

Semi-conductors, charge carriers, intrinsic and extrinsic semi-conductors, carrier generation,
recombination, injection of carriers, Drift and diffusion, carrier mobility, conductivity.

Module:2 Diode Circuit Analysis 4 Hours

PN junction diode – Formation of Junction, Junction Capacitance, characteristics, Diode equations,
Diode Circuits – Clipper and Clamper, rectifiers with and without filters, other multiple diode
circuits, Regulated power supplies.

Module:3 Transistor DC Analysis 5 Hours

BJT Characteristics, current gains, h-parameters, MOSFET Characteristics, Load line and Operating
point analysis, DC analysis and biasing of BJTs and MOSFETs.

Module:4 BJT Amplifiers 5 Hours

Small signal analysis of BJT amplifiers, Calculation of Gain, Input Impedance and Output
Impedance. Basic BJT amplifier Configurations (CE, CC and CB). Power Amplifiers.

Module:5 MOSFET Amplifiers 4 Hours

Small signal analysis of MOSFET amplifiers. Calculation of Gain, Input Impedance and Output
Impedance. Basic MOSFET amplifier configurations - (CS, CD and CG) amplifiers.
Module:6 Frequency response 5 Hours
Amplifier Frequency Response, System Transfer Functions, Frequency Response of Transistor
Amplifier with Circuit Capacitors, Frequency Response of the FET, High-Frequency Response of
Transistor Circuits.

Module:7 Feedback Amplifiers and Oscillators 3 Hours

Basic concepts of feedback-Negative feedback advantages and types. Voltage/Current Series/Shunt,
Positive feedback, Stability, Conditions for Oscillations RC and LC oscillators.

Module:8 Contemporary issues: 2 Hours

Total Lecture hours: 30 Hours
Text Book(s)
1. A.S.Sedra, K.C. Smith, “Microelectronic Circuits: Theory with Applications”, 6Ed,
Oxford University Press, 2013.
Reference Books
1. D.A. Neamen, Electronic Circuits – Analysis and Design, 3Ed, McGraw Hill, 2011.
2. David A. Bell, “Electronic Devices and Circuits”, 5ed, Oxford University Press, 2008.

3. Behzad Razavi, Fundamentals of Microelectronics, 3Ed, Wiley, 2013.

4. Ben Streetman, Sanjay Banerjee, Solid State Electronic Devices, 7ED, Pearson, 2014.
Mode of Evaluation: CAT / Assignment / Quiz / FAT / Project / Seminar
List of Challenging Experiments (Indicative) SLO: 1,2,5,9
1. Realization of logic gates using diodes 2 hours
2. Design line and load voltage regulation circuits using Zener diode 2 hours
3. Design a capacitor for a rectifier circuit 2 hours
4. Design various clamping circuits using diode 2 hours
5. Design various clipping circuits using diode 2 hours
6. Design the circuit using BJT as a switch in an alarm system 2 hours
7. Obtain the h-parameters for different configurations in BJT using input – 2 hours
output characteristics
8. Design the circuit for a verification of BJT as a switch and amplifier using 2 hours
Darlington pair
9. Design the circuit to perform DC analysis of a BJT 2 hours
10. Switching characteristics of MOSFET 2 hours
11. Design the circuit for verifying UJT as a triggering switch 2 hours
12. Design a RC coupled amplifier 2 hours
13. Design a common collector amplifier 2 hours
14. Design a common source FET amplifier 2 hours
Total Laboratory Hours 30 hours

Mode of Evaluation: Assignment /FAT

Recommended by Board of Studies 29/05/2015
Approved by Academic Council 37th AC Date 16/06/2015
Student Learning Outcomes involved:

[1] Having an ability to apply mathematics and science in engineering applications

[2] Having a clear understanding of the subject related concepts and of contemporary issues
[5] Having design thinking capability
[9] Having problem solving ability- solving social issues and engineering problems

CO – SLO Mapping

Module. No. C_O SLO

1. CO_01 1,2
2. CO_02 1,2,5
3. CO_03 1,2,5
4. CO_04 1,2,5
5. CO_05 1,2,5
6. CO_06 1,2,9
7. CO_07 1,2,9
Lab CO_08 1,2,5,9
Project CO_09 1,2,5,9