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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
July 2013

FGH40T120SMD / FGH40T120SMD_F155
1200 V, 40 A FS Trench IGBT
Features General Description
• FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild®’s
• High Speed Switching new series of field stop trench IGBTs offer the optimum
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A performance for hard switching application such as solar
• 100% of the Parts tested for ILM(1) inverter, UPS, welder and PFC applications.
• High Input Impedance
• RoHS Compliant

Applications
• Solar Inverter, Welder, UPS & PFC applications.

E C
C
G

G
COLLECTOR
(FLANGE)
E

Absolute Maximum Ratings T C = 25°C unless otherwise noted

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 1200 V
Gate to Emitter Voltage ±25 V
VGES
Transient Gate to Emitter Voltage ±30 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ILM (1) Clamped Inductive Load Current @ TC = 25oC 160 A
ICM (2) Pulsed Collector Current 160 A
Diode Continuous Forward Current o 80 A
IF @ TC = 25 C
Diode Continuous Forward Current @ TC = 100oC 40 A
IFM Diode Maximum Forward Current 240 A
Maximum Power Dissipation @ TC = 25oC 555 W
PD
Maximum Power Dissipation @ TC = 100oC 277 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case -- 0.27 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case -- 0.89 C/W
o
RJA Thermal Resistance, Junction to Ambient -- 40 C/W

Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 Ω , Inductive Load
2. Limited by Tjmax

©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH40T120SMD FGH40T120SMD TO-247 A03 - - 30
FGH40T120SMD FGH40T120SMD_F155 TO-247G03 - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V
IC = 40 A, VGE = 15 V
- 1.8 2.4 V
TC = 25oC
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 175oC - 2.0 - V

Dynamic Characteristics
Cies Input Capacitance - 4300 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 100 - pF

Switching Characcteristics
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 47 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 475 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 10 - ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 2.7 - mJ
Eoff Turn-Off Switching Loss - 1.1 - mJ
Ets Total Switching Loss - 3.8 - mJ
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 55 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 520 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 50 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 3.4 - mJ
Eoff Turn-Off Switching Loss - 2.5 - mJ
Ets Total Switching Loss - 5.9 - mJ
Qg Total Gate Charge - 370 - nC
VCE = 600 V, IC = 40 A,
Qge Gate to Emitter Charge - 23 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 210 - nC

©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Electrical Characteristics of the DIODE TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IF = 40 A, TC = 25oC - 3.8 4.8 V
VFM Diode Forward Voltage
o
IF = 40 A, TC = 175 C - 2.7 - V
trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, - 65 - ns
diF/dt = 200 A/us, TC = 25oC
Irr Diode Peak Reverse Recovery Current - 7.2 - A
Qrr Diode Reverse Recovery Charge - 234 - nC
trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, - 200 - ns
diF/dt = 200 A/us, TC = 175oC
Irr Diode Peak Reverse Recovery Current - 18.0 - A
Qrr Diode Reverse Recovery Charge - 1800 - nC

©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

300 300
o o 17V
TC = 25 C 20V 15V TC = 175 C 20V
17V
250 250 15V

Collector Current, IC [A]

Collector Current, IC [A]

200 200

12V
150 150
12V

100 100
VGE=10V VGE=10V

50 50

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level
160 4
Common Emitter Common Emitter
Collector Emitter Voltage, VCE [V]

VGE = 15V VGE = 15V

o
TC = 25 C
Collector Current, IC [A]

120 o
TC = 175 C ---
3
80A

80

40A
2
40
IC=20A

0 1
0 1 2 3 4 5 25 50 75 100 125 150 175
o
Collector-Emitter Voltage, VCE [V] Case Temperature TC [ C]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

20 20
Common Emitter Common Emitter
o o
Collector Emitter Voltage, VCE [V]

Collector Emitter Voltage, VCE [V]

TC = 25 C TC = 175 C
16 16
80A

80A
12 12
40A
40A
8 8

IC=20A
IC=20A
4 4

0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency

6000 200
Common Emitter VCC = 600V
VGE = 0V , f = 1MHz load Current : peak of square wave
5000 Ciss TC = 25 C
o
160

Collector Current, IC [A]

Cappacitance [pF]

4000
120 o
TC = 100 C
3000
80
2000
Coss
40 Duty cycle : 50%
1000 Crss T = 100 C
o
C
Powe Dissipation = 277 W
0
1 10 1k 10k 100k 1M
Collector-Emitter Voltage, VCE [V] Switching Frequency, f [Hz]

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance
1000

1000
tr
Switching Time [ns]

td(off)
100
Switching Time [ns]

100
td(on)
tf
Common Emitter
10
VCC = 600V, VGE = 15V
10
IC = 40A
Common Emitter
o
TC = 25 C VCC = 600V, VGE = 15V, IC = 40A
o o o
TC = 175 C TC = 25 C , TC = 175 C
1 1
0 10 20 30 40 50 0 10 20 30 40 50 60 70
Gate Resistance, RG []
Gate Resistance, RG []

Figure 11. Swithcing Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current

tr
10
Eon
100
Switching Loss [mJ]

Switching Time [ns]

Eoff
td(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
IC = 40A VGE = 15V, RG = 10
o o
TC = 25 C TC = 25 C
0.1 10
o o
TC = 175 C TC = 175 C

0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]

©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Swithcing Loss vs.
Collector Current Collector Current
1000 30

td(off) 10 Eon
Switching Time [ns]

Switching Loss [mJ]

100
Eoff

1
tf
10 Common Emitter
VGE = 15V, RG = 10
Common Emitter o
TC = 25 C
VGE = 15V, RG = 10 o
o o TC = 175 C
TC = 25 C , TC = 175 C
1 0.1
20 40 60 80 10 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics

15
IcMAX (Pulsed)
100
10s
12
Gate Emitter Voltage, VGE [V]

200V 400V 100s

IcMAX (Continuous)
Collector Current, Ic [A]

VCC = 600V 1ms

10 10 ms
9
DC Operation

1
6
Single Nonrepetitive
o
0.1 Pulse Tc = 25 C
3 Curves must be derated
Common Emitter
o
linearly with increase
TC = 25 C in temperature
0 0.01
0 50 100 150 200 250 300 350 400 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

10
Reverse Recovery Currnet, Irr [A]

diF/dt = 200 A/s

100 8
Forward Current, IF [A]

6 diF/dt = 100 A/s

10
4

o
TC = 25 C VR = 600 V, IF = 40 A
2 o
o
TC = 175 C --- TC = 25 C
1
0 1 2 3 4 5 0 10 20 30 40 50 60 70 80
Forward Voltage, VF [V] Foward Current, IF [A]

©2013 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

100 400
VR = 600 V, IF = 40 A

Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

o
TC = 25 C
90
300
diF/dt = 200 A/s

80
200
diF/dt = 100 A/s
diF/dt = 100 A/s
70

100
60 diF/dt = 200 A/s
VR = 600 V, IF = 40 A
o
TC = 25 C
50 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, IF [A] Forwad Current, IF [A]

Figure 21. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1
0.3

0.1
PDM
0.01 0.05
t1
t2
0.02
Duty Factor, D = t1/t2
0.01 single pulse Peak Tj = Pdm x Zthjc + TC
1E-3
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2013 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Mechanical Dimensions

TO - 247A03

©2013 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Mechanical Dimensions

TO-247G03

©2013 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™ FPS™ ® Sync-Lock™
AccuPower™ F-PFS™ ®*
AX-CAP * ® FRFET ® PowerTrench ®
SM
BitSiC™ Global Power Resource PowerXS™
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Build it Now™ Green Bridge™ Programmable Active Droop™
TinyBuck™
CorePLUS™ Green FPS™ QFET®
TinyCalc™
CorePOWER™ Green FPS™ e-Series™ QS™
TinyLogic®
CROSSVOLT™ Gmax™ Quiet Series™
TINYOPTO™
CTL™ GTO™ RapidConfigure™
TinyPower™
Current Transfer Logic™ IntelliMAX™ ™
® TinyPWM™
DEUXPEED ISOPLANAR™
TinyWire™
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EcoSPARK® and Better™ SignalWise™
TriFault Detect™
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ESBC™ MICROCOUPLER™ SMART START™
SerDes™
® MicroFET™ Solutions for Your Success™
MicroPak™ SPM®
Fairchild ® MicroPak2™ STEALTH™
MillerDrive™ SuperFET® UHC®
Fairchild Semiconductor®
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FACT Quiet Series™
mWSaver™ SuperSOT™-6 UniFET™
FACT®
OptoHiT™ SuperSOT™-8 VCX™
FAST®
OPTOLOGIC® SupreMOS® VisualMax™
FastvCore™
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2013 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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