Mosfet

MJH6284(NPN),
MJH6284(PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching motor control applications. http://onsemi.com
Features
• Similar to the Popular NPN 2N6284 and the PNP 2N6287 DARLINGTON 20 AMPERE
• Rugged RBSOA Characteristics COMPLEMENTARY SILICON
• Monolithic Construction with Built−in Collector−Emitter Diode POWER TRANSISTORS
• Pb−Free Packages are Available* 100 VOLTS, 160 WATTS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
MARKING
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol Max Unit
DIAGRAM
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Voltage VCEO 100 Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Collector Current
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
− Continuous
− Peak
IC 20
40
Adc SOT−93
(TO−218)
AYWWG
MJH628x
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
CASE 340D
Base Current IB 0.5 Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Device Dissipation @ TC = 25_C PD 160 W
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Derate above 25_C 1.28 W/_C
_C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150
Temperature Range A = Assembly Location
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS Y = Year
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
WW = Work Week
Characteristic Symbol Max Unit G = Pb−Free Package
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction−to−Case RqJC 0.78 _C/W MJH628x = Device Code
x = 4 or 7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION
Recommended Operating Conditions may affect device reliability.
Device Package Shipping
160
MJH6284 SOT−93 30 Units / Rail
140
MJH6284G SOT−93 30 Units / Rail
PD , POWER DISSIPATION (WATTS)
120 (Pb−Free)
MJH6287 SOT−93 30 Units / Rail
100
MJH6287G SOT−93 30 Units / Rail
80 (Pb−Free)
60 Preferred devices are recommended choices for future use

and best overall value.
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

July, 2006 − Rev. 5 MJH6284/D
MJH6284 (NPN), MJH6284 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) VCEO(sus) 100 − Vdc
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 1.0 mAdc
ÎÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎ
ÎÎÎÎÎÎÎ ICEX mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
(VCE = Rated VCB, VBE(off) = 1.5 Vdc) − 0.5
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) − 5.0
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO − 2.0 mAdc
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 10 Adc, VCE = 3.0 Vdc) 750 18,000
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 20 Adc, VCE = 3.0 Vdc) 100 −
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 Adc, IB = 40 mAdc) − 2.0
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 20 Adc, IB = 200 mAdc) − 3.0
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) − 4.0 Vdc
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT 4.0 − MHz
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH6284 − 400
MJH6287 − 600
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 − −
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Typical
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Resistive Load Symbol NPN PNP Unit
ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
Delay Time td 0.1 0.1 ms
ÎÎÎ
ÎÎÎÎÎÎÎ
Rise Time VCC = 30 Vdc, IC = 10 Adc tr 0.3 0.3
IB1 = IB2 = 100 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Storage Time Duty Cycle = 1.0% ts 1.0 1.0
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
Fall Time tf 3.5 2.0
1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS NPN PNP

VCC
D1, MUST BE FAST RECOVERY TYPES, e.g.: −30 V
MJH6284 MJH6287
1N5825 USED ABOVE IB ≈ 100 mA COLLECTOR COLLECTOR
MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE
TUT
V2 RB
APPROX BASE BASE
+12 V
51 D1 ≈ 8.0 k ≈ 50
0
V1
APPROX +4.0 V
−8.0 V 25 ms
EMITTER EMITTER
tr, tf, ≤ 10 ns for td and tr, D1 is disconnected
DUTY CYCLE = 1.0% and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic
http://onsemi.com
2
1.0
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 RqJC = 0.78°C/W MAX
0.02 D CURVES APPLY FOR POWER
0.05
PULSE TRAIN SHOWN t1
0.03 0.01 READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA

50
0.1 ms
IC, COLLECTOR CURRENT (AMPS)
20
10 0.5 ms
5.0 1.0 ms
5.0 ms
dc
2.0
1.0 TJ = 150°C
0.5
SECOND BREAKDOWN LIMITED
0.2 BONDING WIRE LIMITED
0.1 THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)
0.05
2.0 5.0 10 20 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. MJH6284, MJH6287
50 FORWARD BIAS
There are two limitations on the power handling ability of
IC, COLLECTOR CURRENT (AMPS)
40
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
30 operation; i.e., the transistor must not be subjected to greater
DUTY CYCLE = 10%
dissipation than the curves indicate.
20 The data of Figure 5 is based on T J(pk) = 150_C; TC is
L = 200 mH
IC/IB ≥ 100 variable depending on conditions. Second breakdown pulse
TC = 25°C limits are valid for duty cycles to 10% provided T J(pk)
10
VBE(off) = 0−5.0 V v 150_C. TJ(pk) may be calculated from the data in
RBE = 47 W Figure 4. At high case temperatures, thermal limitations will
0 reduce the power that can be handled to values less than the
0 10 20 30 40 60 80 100 110
limitations imposed by second breakdown.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum RBSOA, Reverse Bias

Safe Operating Area
http://onsemi.com
3
NPN PNP
3000 5000
VCE = 3.0 V VCE = 3.0 V
2000
3000 TJ = 150°C
TJ = 150°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

2000 25°C
1000
25°C
500 1000
700 −55 °C
300
500
200 −55 °C
150 300
0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

2.8 2.8
2.6 2.6
2.4 TJ = 25°C 2.4
2.2 2.2
2.0 2.0
1.8 1.8 IC = 15 A
1.6 IC = 15 A 1.6
1.4 1.4 IC = 10 A
1.2 IC = 10 A 1.2
1.0 IC = 5.0 A 1.0 IC = 5.0 A
0.8 0.8
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
3.0 3.0
2.5 TJ = 25°C 2.5 TJ = 25°C

V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0 2.0
VBE(sat) @ IC/IB = 250
1.5 VBE @ VCE = 3.0 V 1.5 VBE(on) @ VCE = 3.0 V
VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 9. “On” Voltages
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U 4 A −−− 20.35 −−− 0.801
A B 14.70 15.20 0.579 0.598
S L C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
1 2 3
K G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L −−− 16.20 −−− 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
J V 1.75 REF 0.069
D
H STYLE 1:
PIN 1. BASE
V 2. COLLECTOR
G 3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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5

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MJH6284(NPN),

60 Preferred devices are recommended choices for future use

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS NPN PNP

For NPN test circuit reverse diode and voltage polarities.

Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic

Figure 4. Thermal Response

FBSOA, FORWARD BIAS SAFE OPERATING AREA

0.1 THERMAL LIMITATION

Figure 5. MJH6284, MJH6287

Figure 6. Maximum RBSOA, Reverse Bias

hFE , DC CURRENT GAIN

Figure 7. DC Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Saturation Region

2.5 TJ = 25°C 2.5 TJ = 25°C

1.5 VBE @ VCE = 3.0 V 1.5 VBE(on) @ VCE = 3.0 V

VBE(sat) @ IC/IB = 250

Figure 9. “On” Voltages

PUBLICATION ORDERING INFORMATION

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