Thyristor Triggering

The turning on Process of the THYRISTOR is known as Triggering. In other words, turning the THYRISTOR from Forward-
Blocking state to Forward-Conduction state is known as Triggering.

1. Gate Triggering:

 This is most widely used SCR triggering method.

 Applying a positive voltage between gate and cathode can Turn ON a forward biased thyristor.
When a positive voltage is applied at the gate terminal, charge carriers are injected in the inner P-layer, thereby
reducing the depletion layer thickness.
 As the applied voltage increases, the carrier injection increases, therefore the voltage at which forward break-
over occurs decreases.
It can be gathered that the gate current determines the forward voltage at which the device switches to its
conducting state. Higher the gate current, the lower the forward break-over voltage.

The first is R1 which is included to limit the gate current to an acceptable level. This
resistor is chosen to provide sufficient current to trigger the SCR while maintaining it
within safe limits for the device. It can easily be calculated using the device ratings and
Ohms law.

The second resistor, R2 is the gate cathode resistor. This is sometimes denoted as RGK and
it is included to prevent spurious triggering. The action of the resistor can be seen with
respect to the two transistor analogy of the SCR. It shows that a low external resistance
between the gate and cathode bypasses some current around the gate junction

Figure 1 Thyristor circuit with

gate resistors

2. ) Forward Voltage Triggering/ Anode cathode forward voltage SCR triggering

 In this mode, an additional forward voltage is applied

between anode and cathode.
 When the anode terminal is positive with respect to
cathode(VAK) , Junction J1 and J3 is forward biased and junction J2
is reverse biased.
Figure 2: Thyristor structure  No current flows due to depletion region in J2, so j2 is
reverse biased (except leakage current).

 As VAK is further increased, at a voltage VBO (Forward Break Over Voltage) the junction J2 undergoes avalanche
breakdown and so a current flows and the device tends to turn ON(even when gate is open)
The use of this method of turning the device on is not advised because exceeding the value of VB0 could destroy
the device. Any circuit should be designed to avoid this method of triggering, noting the maximum of any likely
voltage spikes

3. dv/dt Triggering:

 When the device is forward biased, J1 and J3 are forward biased, J2 is reverse biased.
 Junction J2 behaves as a capacitor, due to the charges existing across the junction.
 If voltage across the device is V, the charge by Q and capacitance by C then,
ic = dQ/dt
Q = CV
ic = d(CV) / dt
= C. dV/dt + V. dC/dt
as dC/dt = 0
ic = C.dV/dt
Therefore when the rate of change of voltage across the device becomes large, the device may turn ON, even if
the voltage across the device is small.
  If the rate of rise of anode to cathode voltage is high, the charging current through the capacitive junction is
high enough to turn on the thyristor.
A high value of charging current may destroy the thyristor hence the device must be protected against high
dv/dt.

4. Thermal Thyristor Triggering/Temperature Triggering:

 The width of depletion layer of SCR decreases with increase in junction temperature.
 Therefore in SCR when VAR is very near its breakdown voltage, the device is triggered by increasing the junction
temperature.
 By increasing the junction temperature the reverse biased junction collapses thus the device starts to conduct.
 If the temperature of the thyristor is high, it results in increase in the electron-hole pairs.
Which in turn increase the leakage current. This type turn on is not preferred as it may result in thermal turn
away and hence it is avoided.

5. Light/Radiation triggering

 This form of SCR triggering or firing is often used with high voltage systems.
 Here an electrical connection is not required from the firing mechanism, and an isolated light source can be
used.
 The light triggering occurs within the inner P-type later. When this area is irradiated by light, free charge carriers
are generated and just like applying a gate signal, the SCR is triggered.
Where light SCR triggering is to be used, specially manufactured SCRs are available. To achieve the maximum
light absorption, specialised SCR structures are used, often having a recess in the inner P-type later to enable
maximum access to the light.
 To enable the light triggering to take place, light is often directed to the correct point in the thyristor / SCR using
optical fibre. Once the light exceeds a certain intensity, switching occurs. An SCR of this type is often referred to
as a Light-activated SCR or LASCR.
These LASCRs have been used in high voltage power distribution switching centres

References:

https://www.electronics-notes.com/articles/analogue_circuits/thyristor-scr-triac/triggering-firing-circuit-design.php

http://www.completepowerelectronics.com/scr-triggering-turn-on-methods/

https://www.electrical4u.com/thyristor-triggering/