IS/ISO 9002 IS / IECQC 700000

Continental Device India Limited Lic# QSC/L- 000019.2 IS / IECQC 750100

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551

TO- 92
CBE

Boca Semiconductor Corp.

BSC

High Voltage NPN Transistor For General Purpose And Telephony Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 160 V
Collector -Base Voltage VCBO 180 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC 600 mA
Power Dissipation @Ta=25 degC PD 625 mW
Derate Above 25 deg C 5.0 mw/deg C
Power Dissipation @Tc=25 degC PD 1.5 W
Derate Above 25 deg C 12 mw/deg C
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 125 deg C/W
Junction to Ambient Rth(j-a) (1) 357 deg C/W
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 - - V
Collector -Base Voltage VCBO IC=100uA.IE=0 180 - - V
Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 - - V
Collector-Cut off Current ICBO VCB=160V, IE=0 - - 50 nA

Ta=100 deg C
VCB=160V, IE=0 - - 50 uA
Emitter-Cut off Current IEBO VEB=4V, IC=0 - - 50 nA
DC Current Gain hFE* IC=1mA,VCE=5V 80 - -
IC=10mA,VCE=5V 80 - 250
IC=50mA,VCE=5V 30 - -
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA - - 0.15 V
IC=50mA,IB=5mA - - 0.2 V
Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA - - 1.0 V
IC=50mA,IB=5mA - - 1.0 V

http://www.bocasemi.com page: 1
Continental Device India Limited Data Sheet Page 1 of 3
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N5551
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Dynamic Characteristics
Small Signal Current Gain hfe IC=1mA, VCE=10V 50 - 200
f=1KHz

Transition Frequency ft VCE=10V,IC=10mA, 100 - 300 MHz

f=100MHz

Output Capacitance Cob VCB=10V, IE=0 - - 6.0 pF

f=1MHz

Input Capacitance Cib VEB=0.5V, IC=0 - - 20 pF

f=1MHz

Noise Figure NF VCE=5V, IC=250uA - - 8.0 dB

R=1kohm, f=10Hz to
15.7kHz
*Pulse Test: Pulse Width=300us, Duty Cycle=2%

TO-92 Plastic Package

B TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
D
M EC H AN IC AL D ATA Ad hesive Tape on To p Sid e FEE
C arrier
P Strip
T (p)
h h
A

A1 FL AT SIDE
LA BE L
A 8.2"
3 2 1
H1 W2
H0
L Wo W1
W

t1 1 3"
F1 F2
t Do 1.7
K

F 7" Flat S id e o f Tran sistor and

P2 Ad hesive Tape Visib le
Po 20 00 pcs./A m mo P ack
D All dim ensions in m m unless specified otherw ise
1 SPEC IFICATIO N
2 ITEM SYM BO L REM ARKS
3 M IN. NO M . M AX. TO L .
E

D A A BOD Y W IDT H A1 4.0 4.8

BOD Y H EIG HT A 4.8 5.2
SEC AA BOD Y T HICKNESS T 3.9 4.2
G PITCH OF C OM PO NENT P 12.7 ±1
FEED HO LE PIT CH Po 12.7 ± 0.3 CUM U LAT IVE PIT CH
ERRO R 1.0 m m /20
FEED HO LE CENTRE TO PITCH
DIM MIN. MAX. CO M PONENT CENTRE P2 6.35 ± 0.4 TO BE M EASU RED AT
F F BOT TOM O F CLIN CH
DISTAN CE BETW EEN O UTER +0.6
A 4.32 5.33 LEADS F 5.08 -0.2
CO M PONENT ALIGN M EN T h 0 1 AT TO P OF BO DY
B 4.45 5.20 TAPE W IDTH W 18 ± 0.5
H

3 2 1 C 3.18 4.19 HO LD-DO W N TAPE W IDTH Wo 6 ± 0.2

HO LE PO SITIO N W1 9 +0.7
-0.5
D 0.41 0.55 HO LD-DO W N TAPE POSIT IO N W2 0.5 ± 0.2
All diminsions in mm.

E 0.35 0.50 LEAD W IRE C LINCH HEIG HT Ho 16 ± 0.5

CO M PONENT HEIGHT H1 23.25
F 5 DEG LENG TH O F SNIPPED LEADS L 11.0
FEED HO LE DIAM ET ER Do 4 ± 0.2
PIN CONFIGURATION G 1.14 1.40 TO TAL TAPE THIC KNESS t 1.2 t1 0.3 - 0.6
LEAD - TO - LEAD DISTANCEF 1, F2 2.54 +0.4
1. COLLECTOR H 1.14 1.53 -0.1
CLINC H HEIGHT H2 3
2. BASE PULL - O UT F OR CE (P) 6N
3. EMITTER K 12.70 —
N OT ES
1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T T O B E G R E AT E R T H A N 0 .2 m m .
2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0
P IT C H E S .
3 . H O L D D O W N TA P E N O T TO E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O

http://www.bocasemi.com E X P O S U R E O F A D H E S IV E .
4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D .
5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T.
6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .

Packing Detail
PACKAGE STANDARD PACK INNER CARTON BOX OUTER CARTON BOX
Details Net Weight/Qty Size Qty Size Qty Gr Wt
TO-92 Bulk 1K/polybag 200 gm/1K pcs 3" x 7.5" x 7.5" 5.0K 17" x 15" x 13.5" 80.0K 23 kgs
TO-92 T&A 2K/ammo box 645 gm/2K pcs 12.5" x 8" x 1.8" 2.0K 17" x 15" x 13.5" 32.0K 12.5 kgs

Continental Device India Limited Data Sheet Page 2 of 3