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IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

IRFP350

Data Sheet

July 1999

File Number

2319.4

16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFP350

TO-247

IRFP350

NOTE: When ordering, include the entire part number.

Features

• 16A, 400V

• r DS(ON) = 0.300

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

G

D S
D
S

Packaging

JEDEC STYLE TO-247 TOP VIEW

SOURCE DRAIN GATE DRAIN (FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)

4-335

4-335

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

IRFP350

Absolute Maximum Ratings

T C = 25 o C, Unless Otherwise Specified

Drain to

Source

Voltage

(Note

1) .

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Drain to Gate Voltage (R GS = 20k )

(Note

1) .

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Continuous Drain Current

 

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T C

=

100 o C.

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Pulsed

Drain

Current

(Note

3) .

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Gate to Source Voltage

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Maximum Power Dissipation

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Linear Derating Factor

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Single Pulse Avalanche Energy Rating (Note 4)

Operating

and

Storage

Temperature .

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Maximum Temperature for Soldering

 

Leads at 0.063in (1.6mm) from Case for

 

Package

Body

for

10s,

See

Techbrief

334 .

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.V DS

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V DGR

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.V GS

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.E AS

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T J , T STG

 

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. T L

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T pkg

IRFP350

400

400

16

10

64

±20

180

1.44

700

-55 to 150

300

260

UNITS

V

V

A

A

A V W W/ o C mJ o C

o

o

C

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T J = 25 o C to 125 o C.

Electrical Specifications

T C = 25 o C, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

 

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

 

BV DSS

V GS = 0V, I D = 250 A (Figure 10)

 

400

-

-

V

Gate to Threshold Voltage

V

GS(TH)

V GS = V DS , I D = 250 A

2.0

-

4.0

V

Zero-Gate Voltage Drain Current

 

I

DSS

V DS = Rated BV DSS , V GS = 0V

 

-

-

25

A

 

V DS = 0.8 x Rated BV DSS , V GS = 0V, T J = 125 o C

-

-

250

A

On-State Drain Current (Note 2)

 

I

D(ON)

V DS > I D(ON) x r DS(ON)MAX , V GS = 10V (Figure 7)

16

-

-

A

Gate to Source Leakage Current

 

I

GSS

V GS = ±20V

-

-

±100

nA

Drain to Source On Resistance (Note 2)

r

DS(ON)

V GS = 10V, I D = 8.9A (Figures 8, 9)

 

-

0.250

0.300

 

Forward Transconductance (Note 2)

 

g

fs

V DS = 2 x V GS , I D = 8.0A (Figure 12)

 

8.0

10

-

S

Turn-On Delay Time

 

t

D(ON)

V DD = 200V, I D = 16A, R GS = 6.2

, V GS = 10V,

-

12

18

ns

Rise Time

 

t

r

R L = 12.3 MOSFET Switching Times are Essentially

-

51

77

ns

Turn-Off Delay Time

t

D(OFF)

Independent of Operating Temperature

-

75

110

ns

Fall Time

 

t

f

-

47

71

ns

Total Gate Charge (Gate to Source + Gate to Drain)

 

Q

g

V GS = 10V, I D = 16A, V DS = 0.8 x Rated BV DSS . I G(REF) = 1.5mA (Figure 14)

-

87

130

nC

Gate to Source Charge

 

Q

gs

Gate Charge is Essentially Independent of Operating Temperature

-

10

-

nC

Gate to Drain “Miller” Charge

 

Q

gd

-

33

-

nC

Input Capacitance

 

C

ISS

V GS = 0V, V DS = 25V, f = 1.0MHz (Figure 11)

-

2000

-

pF

Output Capacitance

 

C OSS

-

400

-

pF

Reverse-Transfer Capacitance

 

C RSS

-

100

-

pF

Internal Drain Inductance

 

L

D

Measured Between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die

Modified MOSFET Symbol Showing the Internal Devices Inductances

-

5.0

-

nH

 

G

D L D L S S
D
L
D
L
S
S

Internal Source Inductance

 

L

S

Measured from the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad

-

12.5

-

nH

Junction to Case

 

R JC

 

-

 

- C/W

0.70

o

Junction to Ambient

 

R JA

Free Air Operation

-

 

- C/W

30

o

4-336

4-336

IRFP350

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

 

I

SD

Modified MOSFET

 
D S
D
S

-

-

16

A

 

I

SDM

Symbol Showing the Integral Reverse P-N Junction Diode

-

-

64

A

Pulse Source to Drain Current (Note 3)

 

G

Source to Drain Diode Voltage (Note 2)

V

SD

T J = 25 o C, I SD = 16A, V GS = 0V (Figure 13)

-

-

1.6

V

Reverse Recovery Time

 

t

rr

T J = 150 o C, I SD = 15A, dI SD /dt = 100A/ s

270

-

1300

ns

Reverse Recovered Charge

Q

RR

T J = 150 o C, I SD = 15A, dI SD /dt = 100A/ s

1.7

-

8.1

C

NOTES:

2. Pulse Test: Pulse width 300 s, duty cycle 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. V DD = 40V, starting T J = 25 o C, L = 5.66mH, R G = 50 , peak I AS = 15A.

Typical Performance Curves Unless Otherwise Specified

1.2 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
POWER DISSIPATION MULTIPLIER

T C , CASE TEMPERATURE ( o C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

20 16 12 8 4 0 25 50 75 100 125 150 I D ,
20
16
12
8
4
0
25
50
75
100
125 150
I D , DRAIN CURRENT (A)

T C , CASE TEMPERATURE ( o C)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

1 0.5 0.2 0.1 0.1 P 0.05 DM 0.02 0.01 -2 10 t 1 t
1
0.5
0.2
0.1
0.1
P
0.05
DM
0.02
0.01
-2
10
t 1
t 2 t 2
SINGLE PULSE
NOTES:
DUTY FACTOR:
D
= t 1 /t 2
PEAK T J = P DM
x
+T C
Z JC x R JC
-3
10
10 -5
10 -4
10 -3
10 -2
0.1
1
10
Z JC , NORMALIZED TRANSIENT
THERMAL IMPEDANCE

t 1 , RECTANGULAR PULSE DURATION (S)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-337

4-337

IRFP350

Typical Performance Curves Unless Otherwise Specified

(Continued)

3 10 25 OPERATION IN THIS V GS = 6.0V REGION IS LIMITED BY r
3
10
25
OPERATION
IN
THIS
V GS = 6.0V
REGION IS
LIMITED
BY
r
V GS = 10V
DS(ON)
20
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
10
10
s
100
s
15
V GS = 5.5V
10
1ms
10
10ms
V GS = 5.0V
1
5
DC
T C = 25 o C
V GS = 4.0V
T J = MAX RATED
V GS = 4.5V
SINGLE PULSE
0.1
0
3
1
10
10 2
10
0
40
80
120
160
200
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)

V DS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

25 PULSE DURATION = 80 s V GS = 10V DUTY CYCLE = 0.5% MAX
25
PULSE DURATION = 80
s
V GS = 10V
DUTY CYCLE = 0.5% MAX
V GS = 6.0V
20
15
V GS = 5.5V
10
V GS = 5.0V
5
V GS = 4.0V
V GS = 4.5V
0
0
2
46
8
10
I D , DRAIN CURRENT (A)

V DS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

0.75 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.60 V GS =
0.75
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0.60
V GS = 10V
0.45
V GS = 20V
0.30
0.15
0
0
13
26
39
52 65
r DS(ON) , DRAIN TO SOURCE
ON RESISTANCE

I D, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

V DS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

2 10 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 2
2
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
= 2 x V GS
DS
10
T J = 150 o C
T J = 25 o C
1
0.1
0
2
4
6
8
10
I D , DRAIN CURRENT (A)

V SD , GATE TO SOURCE VOLTAGE (V)

FIGURE 7.

TRANSFER CHARACTERISTICS

2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 8.9A, V GS =
2.5
PULSE DURATION =
80 s
DUTY CYCLE = 0.5% MAX
8.9A,
V GS = 10V
I D =
2.0
1.5
1.0
0.5
0
-60
-40
-20
0
20
40
60
80
100
120
140
160
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE VOLTAGE

T J , JUNCTION TEMPERATURE ( o C)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

4-338

4-338

IRFP350

Typical Performance Curves Unless Otherwise Specified

1.25 I D = 250 A 1.15 1.05 0.95 0.85 0.75 -60 -40 -20 0
1.25
I D = 250
A
1.15
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
80
100
120
140
160
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE

T J , JUNCTION TEMPERATURE ( o C)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

25 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V DS = 2
25
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V DS = 2 x V GS
20
T J = 25 o C
15
10
T J = 150 o C
5
0
0
5
10
15
20
25
g fs , TRANSCONDUCTANCE (S)

I D , DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

(Continued)

5000 = 0V, f = 1MHz V GS C C ISS = C GS +
5000
= 0V, f
= 1MHz
V GS
C
C ISS = C GS +
GD
C RSS =
C GD
4000
C OSS
C DS + C GS
C
3000
ISS
2000
C
OSS
1000
C
RSS
0
1
2
5 10
2
5
10 2
C, CAPACITANCE (pF)

V DS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2 10 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10 T J
2
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
10
T J = 150 o C
T J = 25 o C
1
0.1
0
0.4
0.8
1.2
1.6
2.0
I SD , SOURCE TO DRAIN CURRENT (A)

V SD , SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE

20 I D = 16A 16 V DS = 80V 12 V DS = 200V
20
I D = 16A
16
V DS = 80V
12
V DS = 200V
320V
V DS =
8
4
0
0
30
60
90
120
150
V GS, GATE TO SOURCE VOLTAGE (V)

Q g , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-339

4-339

IRFP350

Test Circuits and Waveforms

V DS

L VARY t P TO OBTAIN + REQUIRED PEAK I AS R G - V
L
VARY t P TO OBTAIN
+
REQUIRED PEAK I AS
R
G
-
V GS
DUT
t P
0V
I
AS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

V DD

0

BV DSS t P V DS I AS V DD t AV
BV DSS
t P
V DS
I AS
V DD
t AV

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

V DS I AS V DD t AV FIGURE 16. UNCLAMPED ENERGY WAVEFORMS V GS t

V GS

t ON t OFF t t d(ON) d(OFF) t r t f V DS 90%
t ON
t OFF
t
t
d(ON)
d(OFF)
t r
t f
V DS
90%
90%
10%
10%
90%
V GS
50%
50%
PULSE WIDTH
10%
0
R L + R G DUT
R L
+
R G
DUT

V DD

- 0

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V DS

(ISOLATED CURRENT SUPPLY) REGULATOR SAME TYPE 12V AS DUT 0.2 F 50k BATTERY 0.3 F
(ISOLATED
CURRENT
SUPPLY)
REGULATOR
SAME TYPE
12V
AS DUT
0.2
F
50k
BATTERY
0.3
F
D
G
DUT
I G(REF)
S
0
V DS
I G CURRENT
SAMPLING
RESISTOR
I D CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

0

0

V DD Q g(TOT) V GS Q gd Q gs V DS
V
DD
Q
g(TOT)
V GS
Q gd
Q gs
V DS

I G(REF)

GATE CHARGE TEST CIRCUIT 0 0 V DD Q g(TOT) V GS Q gd Q gs
GATE CHARGE TEST CIRCUIT 0 0 V DD Q g(TOT) V GS Q gd Q gs

FIGURE 20. GATE CHARGE WAVEFORMS

4-340

4-340

IRFP350

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