January 2000

FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET

General Description Features

This N Channel Logic Level MOSFET has been designed 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 Ω @ VGS = 4.5 V.
converters using either synchronous or conventional switching
PWM controllers. Optimized for use in switching DC/DC converters with
The MOSFET features faster switching and lower gate charge PWM controllers.
than other MOSFETs with comparable RDS(ON) specifications.
Very fast switching .
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with Low gate charge (Qg typ = 13 nC).
higher overall efficiency.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D 5 4
D S
D FD 9 0
6 3
D 66
7 2
G
S
SO-8 pin 1 S 8 1
S

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDS6690 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 10 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

© 1998 Fairchild Semiconductor Corporation FDS6690 Rev.C

 Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
o
ID = 250 µA, Referenced to 25 C 21 mV /oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V

∆VGS(th)/∆TJ
o
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C -4.5 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 10 A 0.011 0.0135 Ω
TJ =125°C 0.018 0.023
VGS = 4.5 V, I D = 9 A 0.017 0.02
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, I D= 10 A 27 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 1340 pF
f = 1.0 MHz
Coss Output Capacitance 340 pF
Crss Reverse Transfer Capacitance 125 pF
SWITCHING CHARACTERISTICS (Note 2)

tD(on) Turn - On Delay Time VDS= 15 V, I D= 1 A 12 22 ns

tr Turn - On Rise Time VGS = 10 V , RGEN = 6Ω 13 24 ns
tD(off) Turn - Off Delay Time 38 60 ns
tf Turn - Off Fall Time 10 18 ns
Qg Total Gate Charge VDS = 15 V, I D = 10 A, 13 18 nC
Qgs Gate-Source Charge VGS = 5 V 5 nC
Qgd Gate-Drain Charge 4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.73 1.2 V
Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.

a. 50OC/W on a 0.5 in2 b. 105OC/W on a 0.02 in2 c. 125OC/W on a 0.003 in2 pad
pad of 2oz copper. pad of 2oz copper. of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6690 Rev.C
 Typical Electrical Characteristics

50 3
VGS = 10V 6.0V
ID , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
5.0V VGS = 3.5V
40 4.5V 2.5

R DS(on) , NORMALIZED
4.0V 4.0V
30 2
4.5V
20 1.5 5.0V
5.5V
3.5V
7.0V
10 1 10V

0 0.5
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50
VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate
Voltage.

1.8 0.05
DRAIN-SOURCE ON-RESISTANCE

I D = 10 A I D = 5A
1.6
R DS(ON) , ON-RESISTANCE (OHM)
VGS = 10 V 0.04
R DS(ON) , NORMALIZED

1.4
0.03
1.2
TA = 125°C
0.02
1

0.8 0.01 TA = 25°C

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C) V GS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4 . On Resistance Variation with

Temperature. Gate-to-Source Voltage.

50 50
TA = -55°C
VDS = 5V V GS = 0V
IS , REVERSE DRAIN CURRENT (A)

25°C 10
I D, DRAIN CURRENT (A)

40 125°C
1
30 TA= 125°C
0.1 25°C
20
-55°C
0.01
10
0.001

0
2 3 4 5 0.0001
VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD

Figure 5 . Transfer Characteristics. Figure 6 . Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6690 Rev.C
Typical Electrical And Thermal Characteristics

10 2000
V GS , GATE-SOURCE VOLTAGE (V)

I D = 10A V DS = 5V C iss
8 10V
1000
15V

CAPACITANCE (pF)
6
500

C oss
4

200 f = 1 MHz
2
V GS = 0V
C rss
0 100
0 5 10 15 20 25 0.1 0.5 1 2 5 10 30
Q g , GATE CHARGE (nC) V , DRAIN TO SOURCE VOLTAGE (V)
DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

30
100
IT 100
LIM
30 N) us 25 SINGLE PULSE
DS(O
R 1m
ID , DRAIN CURRENT (A)

10 s R θJA =125° C/W

10m 20 TA = 25°C

POWER (W)
s
3 100
ms
15
1s
0.5 10s
DC 10
VGS = 10V
0.1 SINGLE PULSE
5
RθJA =125°C/W
TA = 25°C
0.01 0
0.05 0.1 0.2 0.5 1 2 5 10 20 30 50 0.01 0.1 0.5 1 10 50 100 300
V , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
DS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE

0.2
0.2 R θJA (t) = r(t) * R θJA
0.1 R θJA = 125°C/W
0.1
0.05 0.05

0.02 P(pk)
0.02
0.01
0.01 t1
t2
Single Pulse
0.005
TJ - TA = P * R θJA(t)
0.002 Duty Cycle, D = t1 /t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve .

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6690 Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ SyncFET™

CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOSTM PowerTrench  VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6
HiSeC™ SuperSOT™-8
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D
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