Si4936ADY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Definition
0.036 at VGS = 10 V 5.9
30 • TrenchFET® Power MOSFET
0.053 at VGS = 4.5 V 4.9
• Compliant to RoHS Directive 2002/95/EC

SO-8
D1 D2
S1 1 8 D1

G1 2 7 D1

S2 3 6 D2

G2 4 5 D2 G1 G2

Top View

S1 S2
Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free)
Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 5.9 4.4
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C 4.7 3.6
A
Pulsed Drain Current IDM ± 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25 °C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70 °C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 50 62.5
Maximum Junction-to-Ambienta RthJA
Steady State 90 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 32 40
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71132 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 5.9 A 0.032 0.036
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 4.9 A 0.042 0.053
Forward Transconductancea gfs VDS = 15 V, ID = 5.9 A 15 S
a VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 5.9 A 2.3 nC
Gate-Drain Charge Qgd 2.0
Turn-On Delay Time td(on) 6 12
Rise Time tr VDD = 15 V, RL = 15 Ω 14 25
Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 30 60 ns
Fall Time tf 5 10
Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 30 60
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30 30
VGS = 10 V thru 5 V TC = - 55 °C
4V
24 24 25 °C
I D - Drain Current (A)

125 °C
I D - Drain Current (A)

18 18

12 12

3V
6 6

2V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 71132

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 Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08 1000

800 Ciss
RDS(on) - On-Resistance (Ω)

0.06

C - Capacitance (pF)
VGS = 4.5 V
600

0.04 VGS = 10 V

400

0.02 Coss
200
Crss

0.00 0
0 6 12 18 24 30 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6
VDS = 15 V VGS = 10 V
ID = 5.9 A ID = 5.9 A
VGS - Gate-to-Source Voltage (V)

8 1.4
R DS(on) - On-Resistance
(Normalized)

6 1.2

4 1.0

2 0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

30 0.08

TJ = 150 °C ID = 5.9 A
R DS(on) - On-Resistance (Ω)

0.06
I S - Source Current (A)

10

0.04

TJ = 25 °C
0.02

1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 71132 www.vishay.com

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Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 50

0.2
40
ID = 250 µA
V GS(th) Variance (V)

0.0
30

Power (W)
- 0.2

20
- 0.4

10
- 0.6

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71132.

www.vishay.com Document Number: 71132

4 S09-0869-Rev. D, 18-May-09
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Revision: 18-Jul-08 1