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IRFP4227PbF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass

IRFP4227PbF

Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low Q G for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

 

V DS max

200

V

V DS (Avalanche) typ.

240

V

R DS(ON) typ. @ 10V

21

m

I RP max @ T C = 100°C

130

A

T J max

175

°C

D G S
D
G
S
D D G
D
D
G

S

TO-247AC

GDS

Gate

Drain

Source

Description HEXFET ® Power MOSFET MOSFET MOSFET MOSFET

Absolute Maximum Ratings

 

Parameter

Max.

Units

V GS

Gate-to-Source Voltage

±30

V

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

65

A

I D @ T C = 100°C

Continuous Drain Current, V GS @ 10V

46

 

I DM

Pulsed Drain Current

260

I RP @ T C = 100°C

Repetitive Peak Current

130

P D @T C = 25°C

Power Dissipation

330

W

P D @T C = 100°C

Power Dissipation

190

 

Linear Derating Factor

2.2

W/°C

T

J

Operating Junction and Storage Temperature Range

-40 to + 175

°C

T

STG

 

Soldering Temperature for 10 seconds

300

 

Mounting Torque, 6-32 or M3 Screw

10lb in (1.1N m)

N

Thermal Resistance

 

Parameter

Typ.

Max.

Units

R θJC

Junction-to-Case

–––

0.45

 

R θCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

R θJA

Junction-to-Ambient

–––

62

Notes through are on page 8

www.irf.com

1

09/14/07

Electrical Characteristics @ T J = 25°C (unless otherwise specified)   Parameter Min. Typ. Max.

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

BV DSS

Drain-to-Source Breakdown Voltage

200

–––

–––

V

V

GS = 0V, I D = 250µA

∆ΒV DSS /T J

Breakdown Voltage Temp. Coefficient

–––

170

–––

mV/°C

Reference to 25°C, I D = 1mA

R DS(on)

Static Drain-to-Source On-Resistance

–––

21

25

m

V

GS = 10V, I D = 46A

V GS(th)

Gate Threshold Voltage

3.0

–––

5.0

V

V

DS = V GS , I D = 250µA

V GS(th) /T J

Gate Threshold Voltage Coefficient

–––

-13

–––

mV/°C

 

I DSS

Drain-to-Source Leakage Current

–––

–––

20

µA

V

DS = 200V, V GS = 0V

–––

–––

1.0

mA

V

DS = 200V, V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

V

GS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

V

GS = -20V

g fs

Forward Transconductance

49

–––

–––

S

V

DS = 25V, I D = 46A

Q g

Total Gate Charge

–––

70

98

nC

V

DD = 100V, I D = 46A, V GS = 10V

Q gd

Gate-to-Drain Charge

–––

23

–––

 

t d(on)

Turn-On Delay Time

–––

33

–––

 

V

DD = 100V, V GS = 10V

t r

Rise Time

–––

20

–––

ns

I D = 46A

 

t d(off)

Turn-Off Delay Time

–––

21

–––

R

G = 2.5

t f

Fall Time

–––

31

–––

See Fig. 22

 

t st

Shoot Through Blocking Time

100

–––

–––

ns

V

DD = 160V, V GS = 15V, R G = 4.7

   

–––

570

–––

 

L

= 220nH, C= 0.4µF, V GS = 15V

E PULSE

Energy per Pulse

µJ

V

DS = 160V, R G = 4.7Ω, T J = 25°C

–––

910

–––

L

= 220nH, C= 0.4µF, V GS = 15V

V

DS = 160V, R G = 4.7Ω, T J = 100°C

C iss

Input Capacitance

–––

4600

–––

 

V

GS = 0V

C oss

Output Capacitance

–––

460

–––

pF

V

DS = 25V

C rss

Reverse Transfer Capacitance

–––

91

–––

ƒ

= 1.0MHz,

C oss eff.

Effective Output Capacitance

–––

360

–––

V

GS = 0V, V DS = 0V to 160V

L D

Internal Drain Inductance

–––

5.0

–––

nH

Between lead, 6mm (0.25in.)

D G
D
G

L S

Internal Source Inductance

–––

13

–––

from package and center of die contact

S

Avalanche Characteristics

 

Parameter

Typ.

Max.

Units

E AS

Single Pulse Avalanche Energy

–––

140

mJ

E AR

Repetitive Avalanche Energy

–––

33

mJ

V DS(Avalanche)

Repetitive Avalanche Voltage

240

–––

V

I AS

Avalanche Current

–––

39

A

Diode Characteristics

 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

I S @ T C = 25°C

Continuous Source Current (Body Diode)

–––

–––

65

 

MOSFET symbol

showing the

integral reverse p-n junction diode.

MOSFET symbol showing the integral reverse p-n junction diode.

A

I SM

Pulsed Source Current (Body Diode)

–––

–––

260

V SD

Diode Forward Voltage

–––

–––

1.3

V

T

J = 25°C, I S = 46A, V GS = 0V

t rr

Reverse Recovery Time

–––

100

150

ns

T

J = 25°C, I F = 46A, V DD = 50V

Q rr

Reverse Recovery Charge

–––

430

640

nC

di/dt = 100A/µs

VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 7.0V 10 ≤ 60µs PULSE WIDTH Tj
VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 7.0V 10 ≤ 60µs PULSE WIDTH Tj
VGS
TOP
15V
10V
8.0V
BOTTOM
7.0V
100
7.0V
10
60µs PULSE WIDTH
Tj
= 25°C
0.1
1
10
I D
tne,
r ce CD
(ru-or
rSia
)-n
t
Auo

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000.0 V DS = 25V ≤ 60µs PULSE WIDTH 100.0 T J = 175°C 10.0
1000.0
V DS = 25V
≤ 60µs
PULSE WIDTH
100.0
T J = 175°C
10.0
1.0
T J = 25°C
0.1
3.0
4.0
5.0
6.0
7.0
8.0
I D
r c e,
tD
oS ur
eia
rn
C-
nt
( )Αru-o

V GS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1000 L = 220nH 900 C = 0.4µF 100°C 800 25°C 700 600 500 400
1000
L
= 220nH
900
C
= 0.4µF
100°C
800
25°C
700
600
500
400
300
200
100
110
120
130
140
150
160
170
penE
( µ Js )eluprer
yg

V DS, Drain-to -Source Voltage (V)

Fig 5. Typical E PULSE vs. Drain-to-Source Voltage

1000 VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 7.0V 10 ≤ Tj 60µs PULSE
1000
VGS
TOP
15V
10V
8.0V
BOTTOM
7.0V
100
7.0V
10
Tj
60µs PULSE WIDTH
= 175°C
1
0.1
1
10
I D
r c e,
tD
rr
eia
n
C-
nt
( A-o )ru
uoS

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

4.0 I D = 46A V GS = 10V 3.0 2.0 1.0 0.0 -60 -40
4.0
I D = 46A
V
GS = 10V
3.0
2.0
1.0
0.0
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
R
a,
cetiD
S onr
ru-
iRnO-o
cn eastse
(S )noD
d(
r m la iN
eo
)z

T J , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

1000 L = 220nH C = Variable 100°C 800 25°C 600 400 200 0 130
1000
L
= 220nH
C = Variable
100°C
800
25°C
600
400
200
0
130
140
150
160
170
180
190
g yE ( Jµ )seluprepren

I D, Peak Drain Current (A)

Fig 6. Typical E PULSE vs. Drain Current

1400 L = 220nH 1200 C= 0.4µF C= 0.3µF 1000 C= 0.2µF 800 600 400
1400
L = 220nH
1200
C= 0.4µF
C= 0.3µF
1000
C= 0.2µF
800
600
400
200
0
25
50
75
100
125
150
Temperature (°C)
yg ( Jµ )selupreprenE

Fig 7. Typical E PULSE vs.Temperature

8000 V = 0V, f = 1 MHZ GS C = C C C ds
8000
V
=
0V,
f
=
1
MHZ
GS
C
=
C
C
C ds SHORTED
iss
gs +
gd ,
C
=
C
rss
gd
C
=
C
C
6000
oss
ds +
gd
Ciss
4000
Coss
2000
Crss
0
1
10
100
1000
( )FpcenatciapaC,C

V DS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

70 60 50 40 30 20 10 0 25 50 75 100 125 150 175
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
I D
a,
iD
tnenr
rC
( Au )r

T C , CaseTemperature (°C)

Fig 11. Maximum Drain Current vs. Case Temperature

(°C) Fig 11. Maximum Drain Current vs. Case Temperature 1000.0 100.0 T = 175°C J 10.0
1000.0 100.0 T = 175°C J 10.0 1.0 T J = 25°C V GS =
1000.0
100.0
T
= 175°C
J
10.0
1.0
T J = 25°C
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
I SD ,
rR
De
sv
ee
r ia n C r r ne tu
(A)

V SD , Source-to-Drain Voltage (V)

Fig 8. Typical Source-Drain Diode Forward Voltage

20 I D = 46A V DS = 160V 16 V DS = 100V V
20
I D = 46A
V DS = 160V
16
V DS = 100V
V DS = 40V
12
8
4
0
0
20
40
60
80
100
120
V
ceG,
VStat
( )Vageto-e-
oluro
SG

Q G Total Gate Charge (nC)

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 1µsec 100 100µsec 10µsec 10
1000
OPERATION
IN
THIS AREA
LIMITED
BY R DS (on)
1µsec
100
100µsec
10µsec
10
1
Tc
= 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
I D
tene,
rSD
Cr
ta
i
A-on-
rou c
)u
(r

V DS , Drain-to-Source Voltage (V)

Fig 12. Maximum Safe Operating Area

0.16 I D = 46A 0.12 0.08 T J = 125°C 0.04 T J =
0.16 I D = 46A 0.12 0.08 T J = 125°C 0.04 T J =
0.16
I D = 46A
0.12
0.08
T J = 125°C
0.04
T J = 25°C
0.00
5
6
7
8
9
10
R
tia(
)no
,
ce-nrD
OruoSo
iRn-
estse
)Ω(cna
SD

V GS , Gate-to-Source Voltage (V)

Fig 13.

On-Resistance Vs. Gate Voltage

5.0 4.5 4.0 I D = 250µA 3.5 3.0 2.5 2.0 1.5 -75 -50 -25
5.0
4.5
4.0
I D = 250µA
3.5
3.0
2.5
2.0
1.5
-75
-50
-25
0
25
50
75
100
125
150
175
V
lohtetaG
( )VegatloVrh
dse
tG )h(S

T J , Temperature ( °C )

Fig 15. Threshold Voltage vs. Temperature

600 I D TOP 8.6A 500 14A BOTTOM 39A 400 300 200 100 0 25
600
I
D
TOP
8.6A
500
14A
BOTTOM
39A
400
300
200
100
0
25
50
75
100
125
150
175
E
halvaAseluPelgniS
en
J)c
myE
(ren
g
,SA

Starting T J , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Temperature

200 ton= 1µs Duty cycle = 0.25 Half Sine Wave 160 Square Pulse 120 80
200
ton= 1µs
Duty cycle = 0.25
Half Sine
Wave
160
Square Pulse
120
80
40
0
25
50
75
100
125
150
175
r eePveititepeR na
tk
( AC )ru

Case Temperature (°C)

Fig 16. Typical Repetitive peak Current vs. Case temperature

1 D = 0.50 0.1 0.20 0.10 R R R 1 2 3 Ri (°C/W)
1
D = 0.50
0.1
0.20
0.10
R
R
R
1
2
3
Ri
(°C/W)
τi (sec)
R
R
1
2
R 3
0.05
τ
J
τ
0.08698
0.000074
τ
C
J
τ
1
τ
τ
0.02
τ
2
3
0.2112
0.001316
1
τ
τ
0.01
2
3
0.01
0.1506
0.009395
Ci= τi/Ri
Notes:
SINGLE
PULSE
1. Duty Factor D = t1/t2
(
THERMAL RESPONSE
)
2. Peak
Tj
= P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
seT
l Reh
erm
(a
s
nop
Z t Jh C )

t 1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

+ • • - • + - + - • + • • - •
+
-
+
-
+
-
+
-
- • + - + - • + • • - • Driver Gate Drive P.W.
Driver Gate Drive P.W. Period D = P.W. Period V GS =10V D.U.T. I SD
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
V
GS =10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
I SD

Fig 18. for N-Channel HEXFET Power MOSFETs

15V L DRIVER V DS D.U.T R G + - V DD I AS 20VV
15V
L
DRIVER
V DS
D.U.T
R G
+
-
V DD
I AS
20VV GS
0.01Ω
t p

A

Fig 19a. Unclamped Inductive Test Circuit L VCC DUT 0 1K
Fig 19a. Unclamped Inductive Test Circuit
L
VCC
DUT
0
1K

Fig 20a. Gate Charge Test Circuit

I AS

V (BR)DSS t p
V (BR)DSS
t p
Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr

Fig 20b.

Gate Charge Waveform

A RG C DRIVER L VCC B Ipulse RG DUT Fig 21a. t s t
A RG C DRIVER L VCC B Ipulse RG DUT
A
RG
C
DRIVER
L
VCC
B
Ipulse
RG
DUT

Fig 21a. t st and E PULSE Test Circuit

PULSE A

PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B

PULSE B

t ST Fig 21b. t st Test Waveforms
t ST
Fig 21b.
t st Test Waveforms
Fig 21c. E PULSE Test Waveforms
Fig 21c.
E PULSE Test Waveforms
+ - ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit
+
-
≤ 1
≤ 0.1 %
Fig 22a. Switching Time Test Circuit
V DS 90% 10% V GS t d(on) t r t d(off) t f Fig
V DS
90%
10%
V GS
t d(on)
t r
t d(off)
t f
Fig 22b. Switching Time Waveforms

TO-247AC package is not recommended for Surface Mount Application. Repetitive rating; pulse width limited by

TO-247AC package is not recommended for Surface Mount Application. Repetitive rating; pulse width limited by
TO-247AC package is not recommended for Surface Mount Application. Repetitive rating; pulse width limited by

TO-247AC package is not recommended for Surface Mount Application. Repetitive rating; pulse width limited by
TO-247AC package is not recommended for Surface Mount Application. Repetitive rating; pulse width limited by

TO-247AC package is not recommended for Surface Mount Application.

Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 0.18mH, R G = 25, I AS = 39A. Pulse width 400µs; duty cycle 2%.

R θ is measured at T J of approximately 90°C.

Half sine wave with duty cycle = 0.25, ton=1µsec.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.

Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2007